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1. 发明授权

US07267742B2 Etching apparatus, a method of controlling an etching solution, and a method of manufacturing a semiconductor device 有权
标题翻译：蚀刻装置，蚀刻溶液的控制方法以及半导体装置的制造方法
公开(公告)号：US07267742B2
公开(公告)日：2007-09-11
申请号：US10922905
申请日：2004-08-23
申请人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
发明人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67253 , H01L21/31111 , H01L21/67086
摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.
摘要翻译：蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

2. 发明申请

US20100210110A1 ETCHING APPARATUS, A METHOD OF CONTROLLING AN ETCHING SOLUTION, AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：蚀刻装置，控制蚀刻溶液的方法和制造半导体器件的方法
公开(公告)号：US20100210110A1
公开(公告)日：2010-08-19
申请号：US11878965
申请日：2007-07-30
申请人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
发明人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
IPC分类号： H01L21/311
CPC分类号： H01L21/67253 , H01L21/31111 , H01L21/67086
摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.
摘要翻译：蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

3. 发明授权

US07776756B1 Etching apparatus, a method of controlling an etching solution, and a method of manufacturing a semiconductor device 有权
标题翻译：蚀刻装置，蚀刻溶液的控制方法以及半导体装置的制造方法
公开(公告)号：US07776756B1
公开(公告)日：2010-08-17
申请号：US11878965
申请日：2007-07-30
申请人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
发明人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/67253 , H01L21/31111 , H01L21/67086
摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.
摘要翻译：蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

4. 发明申请

US20050230045A1 Etching apparatus, a method of controlling an etching solution, and a method of manufacturing a semiconductor device 有权
标题翻译：蚀刻装置，蚀刻溶液的控制方法以及半导体装置的制造方法
公开(公告)号：US20050230045A1
公开(公告)日：2005-10-20
申请号：US10922905
申请日：2004-08-23
申请人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
发明人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
IPC分类号： C23F1/08 , B44C1/22 , C23F1/00 , C23F1/16 , H01L21/00 , H01L21/306 , H01L21/311
CPC分类号： H01L21/67253 , H01L21/31111 , H01L21/67086
摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.
摘要翻译：蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

5. 发明授权

US06645876B2 Etching for manufacture of semiconductor devices 有权
公开(公告)号：US06645876B2
公开(公告)日：2003-11-11
申请号：US10014609
申请日：2001-12-14
申请人： Mami Saito , Hiroshi Tomita , Kunihiro Miyazaki , Soichi Nadahara
发明人： Mami Saito , Hiroshi Tomita , Kunihiro Miyazaki , Soichi Nadahara
IPC分类号： H01L21302
CPC分类号： H01L21/02071 , H01L21/3081 , H01L21/31111 , H01L21/67086
摘要： A method of manufacture of semiconductor devices is disclosed, which includes an etching process carried out by using an undiluted etching solution containing H2SO4 and NH4F or H2SO4 and HF as main components, and having an H2O content set to 5 wt % or lower. Moreover, a method of manufacture of semiconductor devices is disclosed, which includes selective etching an SiN film by using a mixed solution of H2SO4 and H2O, or an etching solution obtained by adding a small amount of hydrofluoric acid to the mixed solution.

6. 发明授权

US5698891A Semiconductor device and method for manufacturing the same 失效
标题翻译：具有吸气层的半导体衬底
公开(公告)号：US5698891A
公开(公告)日：1997-12-16
申请号：US667884
申请日：1996-06-20
申请人： Hiroshi Tomita , Mami Saito , Kikuo Yamabe
发明人： Hiroshi Tomita , Mami Saito , Kikuo Yamabe
IPC分类号： H01L21/322 , H01L29/32 , H01L21/38 , H01L29/36
CPC分类号： H01L21/3221 , H01L21/3225 , H01L29/32 , Y10S257/913
摘要： A semiconductor device includes a semiconductor substrate having first and second main surfaces and including a denuded zone, in which an oxygen concentration is lower than that in an inner portion of the semiconductor substrate and which does not include a bulk microdefect, and an intrinsic gettering zone, an element region formed on the first surface of the semiconductor substrate, and an extrinsic gettering layer, made of an amorphous semiconductor material which traps a metal impurity, and formed directly on at least a portion of the intrinsic gettering region or the denuded zone entirely or partially thinned of the second main surface of the semiconductor substrate. A method for manufacturing a semiconductor device includes the steps of forming an element region on a first main surface of a semiconductor substrate having first and second main surfaces and having an intrinsic gettering zone, and forming an extrinsic gettering layer, made of an amorphous semiconductor material which traps a metal impurity, directly on at least a portion of the intrinsic gettering region of the second main surface of the semiconductor substrate.
摘要翻译：一种半导体器件包括具有第一和第二主表面并且包括其中氧浓度低于半导体衬底的内部部分且不包括体微缺陷的溶解区的半导体衬底，以及固有的吸杂区，形成在半导体衬底的第一表面上的元件区域和由捕获金属杂质的非晶半导体材料制成的外部吸杂层，并且直接在至少一部分本征吸气区域或裸露区域上形成或部分地薄化半导体衬底的第二主表面。一种制造半导体器件的方法包括以下步骤：在具有第一和第二主表面并具有固有吸气区的半导体衬底的第一主表面上形成元件区，并形成由非晶半导体材料制成的外部吸气层其直接在半导体衬底的第二主表面的固有吸气区的至少一部分上捕获金属杂质。

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