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    • 6. 发明授权
    • Plasma etching method, plasma etching apparatus and storage medium
    • 等离子体蚀刻方法,等离子体蚀刻装置和存储介质
    • US08383001B2
    • 2013-02-26
    • US12707957
    • 2010-02-18
    • Hiromasa MochikiYoshinobu OoyaFumio YamazakiToshio Haga
    • Hiromasa MochikiYoshinobu OoyaFumio YamazakiToshio Haga
    • B44C1/22
    • H01J37/32174H01J37/32027H01J37/32091H01J2237/334
    • There is provided a plasma etching method capable of achieving a sufficient organic film modifying effect by high-velocity electrons. In forming a hole in an etching target film by plasma etching, a first condition of generating plasma within a processing chamber by way of turning on a plasma-generating high frequency power application unit and a second condition of not generating the plasma within the processing chamber by way of turning off the plasma-generating high frequency power application unit are repeated alternately. Further, a negative DC voltage is applied from a first DC power supply such that an absolute value of the applied negative DC voltage during a period of the second condition is greater than an absolute value of the applied negative DC voltage during a period of the first condition.
    • 提供了能够通过高速电子获得充分的有机膜修饰效果的等离子体蚀刻方法。 在通过等离子体蚀刻在蚀刻靶膜中形成孔时,通过开启等离子体产生高频电力施加单元和在处理室内不产生等离子体的第二条件,在处理室内产生等离子体的第一条件 通过关闭等离子体产生高频电力应用单元交替重复。 此外,从第一直流电源施加负的直流电压,使得在第二状态的周期期间所施加的负的直流电压的绝对值大于在第一状态期间施加的负的直流电压的绝对值 条件。