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    • 3. 发明授权
    • Fundus analyzing appartus and fundus analyzing method
    • 眼底分析和眼底分析方法
    • US08684528B2
    • 2014-04-01
    • US13387497
    • 2010-07-14
    • Takashi FujimuraHiroyuki Aoki
    • Takashi FujimuraHiroyuki Aoki
    • A61B3/12A61B3/10
    • A61B3/12A61B3/1005A61B3/102G06T7/0012G06T2200/24G06T2207/10101G06T2207/30041
    • A fundus analyzing apparatus 1 performs OCT measurements of a fundus Ef and generates multiple tomographic images that each depict layer structures of the fundus Ef. Each formed tomographic image is stored in a storage 212. Based on the pixel values of the pixels of each tomographic image, the layer-region identifying part 233 identifies the layer region corresponding to the pigment layer of the retina. Based on the shape of the layer region, the curve calculator 234 obtains a convex standard curve in the direction of depth of the fundus Ef. Based on the layer region and the standard curve, a protrusion-region identifying part 235 identifies protrusion regions where the layer region protrudes in the opposite direction from the direction of depth of the fundus Ef. A morphological-information generating part 236 generates morphological information representing the morphology (number, size, distribution, etc.) of the protrusion regions.
    • 眼底分析装置1执行眼底Ef的OCT测量,并生成各自描绘眼底Ef的层结构的多个断层图像。 每个形成的断层图像被存储在存储器212中。基于每个断层图像的像素的像素值,层区域识别部分233识别对应于视网膜的颜料层的层区域。 基于层区域的形状,曲线计算器234获得在眼底Ef的深度方向上的凸标准曲线。 基于层区域和标准曲线,突起区域识别部件235识别突起区域,其中层区域沿与眼底Ef的深度方向相反的方向突出。 形态信息生成部236生成表示突起区域的形态(数量,大小,分布等)的形态信息。
    • 8. 发明申请
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US20070184660A1
    • 2007-08-09
    • US11699793
    • 2007-01-30
    • Takashi Fujimura
    • Takashi Fujimura
    • H01L21/302H01L21/31
    • H01L21/304H01L21/6835H01L23/3157H01L2221/6834H01L2924/0002H01L2924/00
    • Provided is a method of manufacturing a semiconductor device in which, when a polyimide resin film is formed as a protective film on a front surface of a semiconductor chip, the polyimide resin film disposed on scribe lines is removed and the polyimide resin film disposed on a circumferential portion of the semiconductor wafer is also removed. Thus, when a rear surface of the semiconductor wafer is ground, the outer circumferential portion of the semiconductor wafer and the surface protective tape can be completely bonded to each other, thereby making it possible to fill a gap between the surface protective tape and each scribe line formed on the front surface of the semiconductor wafer, prevent grinding wafer from penetrating into the gap when the rear surface of the semiconductor wafer is ground, and prevent the scribe lines and the front surface of the semiconductor chip from being contaminated with grinding swarf.
    • 提供一种制造半导体器件的方法,其中当在半导体芯片的前表面上形成作为保护膜的聚酰亚胺树脂膜时,去除设置在划痕线上的聚酰亚胺树脂膜,并且将聚酰亚胺树脂膜设置在 半导体晶片的圆周部分也被去除。 因此,当半导体晶片的后表面被研磨时,半导体晶片的外圆周部分和表面保护带可以彼此完全接合,从而可以填充表面保护带和每个划片之间的间隙 形成在半导体晶片的前表面上的线,当半导体晶片的后表面被研磨时,防止研磨晶片渗透到间隙中,并且防止划线和半导体芯片的前表面被研磨切屑污染。