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1. 发明申请

US20110018024A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ILLUMINATING APPARATUS USING THE SAME 有权
标题翻译：使用相同的半导体发光元件和照明设备
公开(公告)号：US20110018024A1
公开(公告)日：2011-01-27
申请号：US12933749
申请日：2009-03-25
申请人： Hiroshi Fukshima , Kazuyuki Yamae , Masaharu Yasuda , Tomoya Iwahashi , Akihiko Murai
发明人： Hiroshi Fukshima , Kazuyuki Yamae , Masaharu Yasuda , Tomoya Iwahashi , Akihiko Murai
IPC分类号： H01L33/60
CPC分类号： H01L33/42 , H01L33/22 , H01L33/387 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting element, including: an n-type semiconductor layer having optical transparency with an emission wavelength of a light emitting layer, the light emitting layer and a p-type semiconductor layer, which are laminated; and a reflection film which is disposed on a side opposite to a surface from which light emitted from the light emitting layer is extracted, wherein the reflection film comprises: a transparent layer having optical transparency with the emission wavelength of the light emitting layer, and a metal layer, which is laminated on the transparent layer on a side opposite to the light emitting layer and is constituted by a metal material having a high reflectance, the transparent layer has a refractive index lower than a refractive index of a layer disposed on a side of the light emitting layer when viewed from the transparent layer, with the emission wavelength, and a thickness of the transparent layer is equal to or more than a value obtained by dividing a value of ¾ of the emission wavelength by the refractive index of the transparent layer.
摘要翻译：一种半导体发光元件，包括：层叠有具有发光层的发光波长的光学透明性的n型半导体层，发光层和p型半导体层; 以及反射膜，其设置在与从所述发光层发射的光的表面相反的一侧，所述反射膜包括：具有发光层的发光波长的光学透明性的透明层，以及金属层，其层叠在与发光层相反的一侧的透明层上，由具有高反射率的金属材料构成，透明层的折射率低于设置在侧面的层的折射率从透明层观察发光层的发光波长，并且透明层的厚度等于或大于通过将发射波长的¾的值除以透明层的折射率而获得的值层。

2. 发明授权

US08525204B2 Semiconductor light emitting element and illuminating apparatus using the same 有权
标题翻译：半导体发光元件及其使用的照明装置
公开(公告)号：US08525204B2
公开(公告)日：2013-09-03
申请号：US12933749
申请日：2009-03-25
申请人： Hiroshi Fukshima , Kazuyuki Yamae , Masaharu Yasuda , Tomoya Iwahashi , Akihiko Murai
发明人： Hiroshi Fukshima , Kazuyuki Yamae , Masaharu Yasuda , Tomoya Iwahashi , Akihiko Murai
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/22 , H01L33/387 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting element, including: an n-type semiconductor layer having optical transparency with an emission wavelength of a light emitting layer, the light emitting layer and a p-type semiconductor layer, which are laminated; and a reflection film which is disposed on a side opposite to a surface from which light emitted from the light emitting layer is extracted, wherein the reflection film comprises: a transparent layer having optical transparency with the emission wavelength of the light emitting layer, and a metal layer, which is laminated on the transparent layer on a side opposite to the light emitting layer and is constituted by a metal material having a high reflectance, the transparent layer has a refractive index lower than a refractive index of a layer disposed on a side of the light emitting layer when viewed from the transparent layer, with the emission wavelength, and a thickness of the transparent layer is equal to or more than a value obtained by dividing a value of ¾ of the emission wavelength by the refractive index of the transparent layer.
摘要翻译：一种半导体发光元件，包括：层叠有具有发光层的发光波长的光学透明性的n型半导体层，发光层和p型半导体层; 以及反射膜，其设置在与从所述发光层发射的光的表面相反的一侧，所述反射膜包括：具有发光层的发光波长的光学透明性的透明层，以及金属层，其层叠在与发光层相反的一侧的透明层上，由具有高反射率的金属材料构成，透明层的折射率低于设置在侧面的层的折射率从透明层观察发光层的发光波长，并且透明层的厚度等于或大于通过将发射波长的¾的值除以透明层的折射率而获得的值层。

3. 发明授权

US08367442B2 Method of manufacturing semiconductor light emitting element 有权
公开(公告)号：US08367442B2
公开(公告)日：2013-02-05
申请号：US12998521
申请日：2009-10-27
申请人： Kazuyuki Yamae , Hiroshi Fukshima , Masaharu Yasuda , Tomoya Iwahashi , Hidenori Kamei , Syuusaku Maeda
发明人： Kazuyuki Yamae , Hiroshi Fukshima , Masaharu Yasuda , Tomoya Iwahashi , Hidenori Kamei , Syuusaku Maeda
IPC分类号： H01L21/786
摘要： A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.

4. 发明申请

US20110263058A1 METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效
标题翻译：制造半导体发光元件的方法
公开(公告)号：US20110263058A1
公开(公告)日：2011-10-27
申请号：US12998521
申请日：2009-10-27
申请人： Kazuyuki Yamae , Hiroshi Fukshima , Masaharu Yasuda , Tomoya Iwahashi , Hidenori Kamei , Syuusaku Maeda
发明人： Kazuyuki Yamae , Hiroshi Fukshima , Masaharu Yasuda , Tomoya Iwahashi , Hidenori Kamei , Syuusaku Maeda
IPC分类号： H01L33/32
CPC分类号： H01S5/0207 , H01L33/0079 , H01L33/0095 , H01L33/32 , H01S5/0201 , H01S5/0202 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/02492 , H01S5/32341
摘要： A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.
摘要翻译：一种制造半导体发光元件的方法包括在具有透明性的第一晶片上形成多层氮化物半导体层的半导体层形成步骤; 将多层氮化物半导体层接合到第一晶片的接合步骤; 沟槽形成步骤，形成从第一晶片的下表面延伸到多层氮化物半导体层的凹槽; 施加步骤，通过所述第一晶片向所述多层氮化物半导体层的下表面施加第一光，以降低所述多层氮化物半导体层与所述第一晶片之间的结合力; 分离步骤，从所述多层氮化物半导体层分离所述第一晶片; 以及切割步骤，沿着所述凹槽切割所述第二晶片以分成多个所述半导体发光元件。

5. 发明授权

US08399272B2 Method of manufacturing semiconductor light emitting element 失效
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08399272B2
公开(公告)日：2013-03-19
申请号：US12998521
申请日：2009-10-27
申请人： Kazuyuki Yamae , Hiroshi Fukshima , Masaharu Yasuda , Tomoya Iwahashi , Hidenori Kamei , Syuusaku Maeda
发明人： Kazuyuki Yamae , Hiroshi Fukshima , Masaharu Yasuda , Tomoya Iwahashi , Hidenori Kamei , Syuusaku Maeda
IPC分类号： H01L21/786
CPC分类号： H01S5/0207 , H01L33/0079 , H01L33/0095 , H01L33/32 , H01S5/0201 , H01S5/0202 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/02492 , H01S5/32341
摘要： A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.
摘要翻译：一种制造半导体发光元件的方法包括在具有透明性的第一晶片上形成多层氮化物半导体层的半导体层形成步骤; 将多层氮化物半导体层接合到第一晶片的接合步骤; 沟槽形成步骤，形成从第一晶片的下表面延伸到多层氮化物半导体层的凹槽; 施加步骤，通过所述第一晶片向所述多层氮化物半导体层的下表面施加第一光，以降低所述多层氮化物半导体层与所述第一晶片之间的结合力; 分离步骤，从所述多层氮化物半导体层分离所述第一晶片; 以及切割步骤，沿着所述凹槽切割所述第二晶片以分成多个所述半导体发光元件。

6. 发明申请

US20090267092A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20090267092A1
公开(公告)日：2009-10-29
申请号：US11813370
申请日：2007-03-09
申请人： Hiroshi Fukshima , Masaharu Yasuda , Kazuyuki Yamae
发明人： Hiroshi Fukshima , Masaharu Yasuda , Kazuyuki Yamae
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/20 , H01L33/22 , H01L51/5268 , H01L51/5275 , H01L2933/0083
摘要： A light-emitting device of the present invention includes: a semiconductor layer 1 including a light-emitting layer 12; a recess/projection portion 14 including recesses and projections formed in a pitch larger than a wavelength of light emitted from the light-emitting layer 12, the recess/projection portion 14 being formed in a whole area or a partial area of the surface of the semiconductor layer which light is emitted from; and a reflective layer formed on an opposite surface of the semiconductor layer to the surface from which light is emitted, the reflective layer having a reflectance of 90% or more. According to the light-emitting device having such arrangement, the light can be emitted efficiently by synergetic effect of the reflective layer and the recess/projection portion.
摘要翻译：本发明的发光器件包括：包含发光层12的半导体层1; 凹部/突出部14，其包括以比从发光层12发射的光的波长大的间距形成的凹部和突起，凹部/突出部14形成在该发光层12的表面的整个区域或部分区域中发光的半导体层; 以及形成在所述半导体层的相对表面上的光的反射层，所述反射层的反射率为90％以上。根据具有这种配置的发光器件，可以通过反射层和凹凸部的协同效应有效地发射光。

7. 发明授权

US08049233B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08049233B2
公开(公告)日：2011-11-01
申请号：US11813370
申请日：2007-03-09
申请人： Hiroshi Fukshima , Masaharu Yasuda , Kazuyuki Yamae
发明人： Hiroshi Fukshima , Masaharu Yasuda , Kazuyuki Yamae
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/405 , H01L33/20 , H01L33/22 , H01L51/5268 , H01L51/5275 , H01L2933/0083
摘要： A light-emitting device of the present invention includes: a semiconductor layer 1 including a light-emitting layer 12; a recess/projection portion 14 including recesses and projections formed in a pitch larger than a wavelength of light emitted from the light-emitting layer 12, the recess/projection portion 14 being formed in a whole area or a partial area of the surface of the semiconductor layer which light is emitted from; and a reflective layer formed on an opposite surface of the semiconductor layer to the surface from which light is emitted, the reflective layer having a reflectance of 90% or more. According to the light-emitting device having such arrangement, the light can be emitted efficiently by synergetic effect of the reflective layer and the recess/projection portion.
摘要翻译：本发明的发光器件包括：包含发光层12的半导体层1; 凹部/突出部14，其包括以比从发光层12发射的光的波长大的间距形成的凹部和突起，凹部/突出部14形成在该发光层12的表面的整个区域或部分区域中发光的半导体层; 以及形成在所述半导体层的相对表面上的光的反射层，所述反射层的反射率为90％以上。根据具有这种配置的发光器件，可以通过反射层和凹凸部的协同效应有效地发射光。

8. 发明申请

US20110215296A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF MANUFACTURING SAME, AND LIGHT-EMITTING DEVICE 失效
标题翻译：半导体发光元件，制造方法和发光器件
公开(公告)号：US20110215296A1
公开(公告)日：2011-09-08
申请号：US13126525
申请日：2009-10-28
申请人： Akihiko Murai , Hiroshi Fukshima
发明人： Akihiko Murai , Hiroshi Fukshima
IPC分类号： H01L33/06 , H01L33/50
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/507
摘要： A semiconductor light-emitting element, a method of manufacturing same, and a light-emitting device enabling an increase in light emission efficiency is provided. The semiconductor light-emitting element 1 in accordance with the present invention includes: a light-emitting layer 2 having a laminated structure in which a p-type GaN film 24 and an n-type GaN film 22 are included; a conductive hexagonal pyramidal base 3 formed from ZnO and mounting with the light-emitting layer on a bottom surface 31; an anode 5 joined to the bottom surface 31 of the base 3 at a position apart from the light-emitting layer 2; and a cathode 4 mounted on the light-emitting layer 2. In the semiconductor light-emitting element 1, the p-type GaN film 24 is joined to the bottom surface 31 of the base 3, and the cathode 4 is joined to an N-polar plane of the n-type GaN film 22, said N-polar plane of the n-type GaN film 22 being an opposite side to the p-type GaN film 24. In the semiconductor light-emitting element 1, the N-polar plane of the n-type GaN film 22 has a fine peak-valley structure 22c outside a portion joined to the cathode 4.
摘要翻译：提供了半导体发光元件及其制造方法以及能够提高发光效率的发光元件。根据本发明的半导体发光元件1包括：具有p型GaN膜24和n型GaN膜22的层叠结构的发光层2; 由ZnO形成的导电六角锥形基座3，并且在底面31上与发光层一起安装; 在离开发光层2的位置处接合到基座3的底面31的阳极5; 以及安装在发光层2上的阴极4.在半导体发光元件1中，p型GaN膜24与基体3的底面31接合，阴极4与N n型GaN膜22的极性面，n型GaN膜22的N极平面与p型GaN膜24相反。在半导体发光元件1中， n型GaN膜22的极性面在与阴极4接合的部分的外侧具有微细的峰谷结构22c。

9. 发明授权

US08395173B2 Semiconductor light-emitting element, method of manufacturing same, and light-emitting device 失效
标题翻译：半导体发光元件及其制造方法以及发光元件
公开(公告)号：US08395173B2
公开(公告)日：2013-03-12
申请号：US13126525
申请日：2009-10-28
申请人： Akihiko Murai , Hiroshi Fukshima
发明人： Akihiko Murai , Hiroshi Fukshima
IPC分类号： H01L33/38 , H01L33/42 , H01L33/48
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/507
摘要： A semiconductor light-emitting element, a method of manufacturing same, and a light-emitting device enabling an increase in light emission efficiency is provided. The semiconductor light-emitting element 1 in accordance with the present invention includes: a light-emitting layer 2 having a laminated structure in which a p-type GaN film 24 and an n-type GaN film 22 are included; a conductive hexagonal pyramidal base 3 formed from ZnO and mounting with the light-emitting layer on a bottom surface 31; an anode 5 joined to the bottom surface 31 of the base 3 at a position apart from the light-emitting layer 2; and a cathode 4 mounted on the light-emitting layer 2. In the semiconductor light-emitting element 1, the p-type GaN film 24 is joined to the bottom surface 31 of the base 3, and the cathode 4 is joined to an N-polar plane of the n-type GaN film 22, said N-polar plane of the n-type GaN film 22 being an opposite side to the p-type GaN film 24. In the semiconductor light-emitting element 1, the N-polar plane of the n-type GaN film 22 has a fine peak-valley structure 22c outside a portion joined to the cathode 4.
摘要翻译：提供了半导体发光元件及其制造方法以及能够提高发光效率的发光元件。根据本发明的半导体发光元件1包括：具有p型GaN膜24和n型GaN膜22的层叠结构的发光层2; 由ZnO形成的导电六角锥形基座3，并且在底面31上与发光层一起安装; 在离开发光层2的位置处接合到基座3的底面31的阳极5; 以及安装在发光层2上的阴极4.在半导体发光元件1中，p型GaN膜24与基体3的底面31接合，阴极4与N n型GaN膜22的极性面，n型GaN膜22的N极平面与p型GaN膜24相反。在半导体发光元件1中， n型GaN膜22的极性面在与阴极4接合的部分的外侧具有微细的峰谷结构22c。

10. 发明授权

US07468571B2 Electrostatically driven latchable actuator system 失效
标题翻译：静电驱动的可锁定致动器系统
公开(公告)号：US07468571B2
公开(公告)日：2008-12-23
申请号：US10569101
申请日：2004-08-25
申请人： Hiroshi Harada , Naomasa Oka , Yuji Suzuki , Hiroshi Fukshima , Hiroshi Noge , Jun Ogihara , Kiyohiko Kawano
发明人： Hiroshi Harada , Naomasa Oka , Yuji Suzuki , Hiroshi Fukshima , Hiroshi Noge , Jun Ogihara , Kiyohiko Kawano
IPC分类号： G02B26/08 , H02N1/00
CPC分类号： G02B6/358 , G02B6/3512 , G02B6/355 , G02B6/357 , G02B6/3584 , G02B6/3596 , G02B26/02 , H01H59/0009 , H01H2001/0047
摘要： An electrostatically driven latchable actuator system has an actuator and a pair of side effectors on opposite ends of the actuator. The actuator is resiliently supported to a substrate and is movable along a linear axis between two operative positions as being electrically attracted to one of the side effectors. A latch mechanism is provided to mechanically latch the actuator at either of the operative positions. The side effectors are movably towards and away from the actuator along the linear axis between a normal position and a shifted position close to the actuator. Both of the side effectors are also resiliently supported to the substrate to be movable towards the actuator by being electrostatically attracted thereto and away from the actuator by resiliency. The moving side effector is interlocked to the latch mechanism through a mechanical link so as to unlatch the actuator in response to one of the side effectors being attracted to the actuator, and allow the actuator to move from one operative position to the other operative position to be again latched thereat.
摘要翻译：静电驱动的可闩锁致动器系统在致动器的相对端具有致动器和一对副作用器。致动器被弹性地支撑到基板上，并且可以沿着线性轴线在两个操作位置之间移动，从而被电吸引到一个副作用器。提供闩锁机构以在执行位置的任一位置机械地闩锁致动器。副作用器可沿着线性轴线在致动器之间朝向和远离致动器移动，在正常位置和靠近致动器的移位位置之间。两个副作用器也被弹性地支撑到基板上，以通过静电吸引到致动器并且通过弹性远离致动器而朝向致动器移动。运动侧执行器通过机械连杆与闩锁机构互锁，以响应于一个副作用器被吸引到致动器而解锁致动器，并允许致动器从一个操作位置移动到另一操作位置，再次被锁在那里。

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