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1. 发明授权

US08552444B2 Semiconductor light-emitting device and manufacturing method of the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08552444B2
公开(公告)日：2013-10-08
申请号：US12743330
申请日：2008-11-13
申请人： Yoshiyuki Ide , Hidenori Kamei , Isamu Yonekura , Kunihiko Obara , Koichi Nakahara , Kouji Nakatsu , Yoshirou Tooya , Toshirou Kitazono , Toshihide Maeda , Kenichi Koya , Takahiro Shirahata
发明人： Yoshiyuki Ide , Hidenori Kamei , Isamu Yonekura , Kunihiko Obara , Koichi Nakahara , Kouji Nakatsu , Yoshirou Tooya , Toshirou Kitazono , Toshihide Maeda , Kenichi Koya , Takahiro Shirahata
IPC分类号： H01L29/72
CPC分类号： H01L33/60 , H01L24/97 , H01L33/54 , H01L2224/04042 , H01L2224/05111 , H01L2224/05155 , H01L2224/05169 , H01L2224/05573 , H01L2224/0558 , H01L2224/05624 , H01L2224/05639 , H01L2224/05666 , H01L2224/13 , H01L2224/14 , H01L2224/16225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/97 , H01L2924/12035 , H01L2924/12042 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Light from a semiconductor light-emitting element travels in all directions. Thus, light that travels in the directions other than a lighting direction cannot be used effectively. Means for forming a semiconductor light-emitting element having tilted side surfaces, and forming a reflective layer on the tilted side surfaces has been proposed. However, since the tilted surfaces are formed by an etching method or the like, it takes a long time to form the tilted surfaces, and it is difficult to control the tilted surfaces. As a solution to these problems, semiconductor light-emitting elements are placed on a submount substrate and sealed with a sealant, and then a groove is formed in a portion between adjoining ones of the semiconductor light-emitting elements. The grooves formed are filled with a reflective material, and a light-emitting surface is polished. Then, the submount substrate is divided into individual semiconductor light-emitting devices. Thus, a semiconductor light-emitting device having a reflective layer on its side surfaces can be obtained.
摘要翻译：来自半导体发光元件的光在各个方向上行进。因此，不能有效地利用沿着照明方向以外的方向行进的光。已经提出了用于形成具有倾斜侧表面的半导体发光元件以及在倾斜侧表面上形成反射层的装置。然而，由于通过蚀刻方法等形成倾斜表面，所以形成倾斜表面需要很长时间，并且难以控制倾斜表面。作为这些问题的解决方案，将半导体发光元件放置在副安装座基板上并用密封剂密封，然后在相邻的半导体发光元件之间的部分中形成凹槽。所形成的槽被反射材料填充，并且发光表面被抛光。然后，将副安装座基板分割为各个半导体发光元件。因此，可以获得在其侧表面具有反射层的半导体发光器件。

2. 发明授权

US08367442B2 Method of manufacturing semiconductor light emitting element 有权
公开(公告)号：US08367442B2
公开(公告)日：2013-02-05
申请号：US12998521
申请日：2009-10-27
申请人： Kazuyuki Yamae , Hiroshi Fukshima , Masaharu Yasuda , Tomoya Iwahashi , Hidenori Kamei , Syuusaku Maeda
发明人： Kazuyuki Yamae , Hiroshi Fukshima , Masaharu Yasuda , Tomoya Iwahashi , Hidenori Kamei , Syuusaku Maeda
IPC分类号： H01L21/786
摘要： A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.

3. 发明申请

US20110263058A1 METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效
标题翻译：制造半导体发光元件的方法
公开(公告)号：US20110263058A1
公开(公告)日：2011-10-27
申请号：US12998521
申请日：2009-10-27
申请人： Kazuyuki Yamae , Hiroshi Fukshima , Masaharu Yasuda , Tomoya Iwahashi , Hidenori Kamei , Syuusaku Maeda
发明人： Kazuyuki Yamae , Hiroshi Fukshima , Masaharu Yasuda , Tomoya Iwahashi , Hidenori Kamei , Syuusaku Maeda
IPC分类号： H01L33/32
CPC分类号： H01S5/0207 , H01L33/0079 , H01L33/0095 , H01L33/32 , H01S5/0201 , H01S5/0202 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/02492 , H01S5/32341
摘要： A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.
摘要翻译：一种制造半导体发光元件的方法包括在具有透明性的第一晶片上形成多层氮化物半导体层的半导体层形成步骤; 将多层氮化物半导体层接合到第一晶片的接合步骤; 沟槽形成步骤，形成从第一晶片的下表面延伸到多层氮化物半导体层的凹槽; 施加步骤，通过所述第一晶片向所述多层氮化物半导体层的下表面施加第一光，以降低所述多层氮化物半导体层与所述第一晶片之间的结合力; 分离步骤，从所述多层氮化物半导体层分离所述第一晶片; 以及切割步骤，沿着所述凹槽切割所述第二晶片以分成多个所述半导体发光元件。

4. 发明授权

US07863623B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07863623B2
公开(公告)日：2011-01-04
申请号：US12066465
申请日：2006-09-12
申请人： Yoshitaka Kinoshita , Hidenori Kamei
发明人： Yoshitaka Kinoshita , Hidenori Kamei
IPC分类号： H01L31/0256
CPC分类号： H01L33/12 , H01L33/32
摘要： A semiconductor light emitting device includes a substrate 11 including a group III-V nitride semiconductor; a first-conductivity-type layer 12 formed on the substrate 11, the first-conductivity-type layer including a plurality of group III-V nitride semiconductor layers of first conductivity type; an active layer 13 formed on the first semiconductor layer 12; and a second-conductivity-type layer 14 formed on the active layer 13, the second-conductivity-type layer including a group III-V nitride semiconductor layer of second conductivity type. The first-conductivity-type layer 12 includes an intermediate layer 23 made of Ga1-xInxN (0
摘要翻译：半导体发光器件包括：具有III-V族氮化物半导体的衬底11; 形成在基板11上的第一导电型层12，第一导电型层包括多个第一导电类型的III-V族氮化物半导体层; 形成在第一半导体层12上的有源层13; 以及形成在有源层13上的第二导电型层14，第二导电型层包括第二导电类型的III-V族氮化物半导体层。第一导电型层12包括由Ga1-xInxN（0

5. 发明申请

US20100258837A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME 有权
标题翻译：使用其的半导体发光元件和半导体发光器件
公开(公告)号：US20100258837A1
公开(公告)日：2010-10-14
申请号：US12739295
申请日：2008-10-30
申请人： Atsuhiro Hori , Hidenori Kamei , Syuusaku Maeda
发明人： Atsuhiro Hori , Hidenori Kamei , Syuusaku Maeda
IPC分类号： H01L33/38 , H01L33/62
CPC分类号： H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor light emitting device, in which a light emitting layer is formed on one surface of a conductive substrate, and an n-type electrode and a p-type electrode are formed on the same side as the light emitting layer, there has been the problem that, if larger electric power is applied, heat is generated near the n-side electrode to reduce luminous efficiency.The n-side electrode has a predetermined length at a corner portion or along an edge of the substrate to disperse a current flowing from the n-side electrode into the substrate, thereby avoiding heat generation near the n-side electrode. In this type of semiconductor light emitting element, the existence of the n-side electrode reduces a light emitting area. Therefore, the length of the n-side electrode preferably ranges from 20% to 50% of the entire peripheral length of the substrate.
摘要翻译：在导电性基板的一个表面上形成有发光层的半导体发光元件和与发光层同一侧形成有n型电极和p型电极的情况下，如果施加较大的电力，则在n侧电极附近产生热量以降低发光效率的问题。 n侧电极在基板的角部或沿着边缘具有预定的长度，以将从n侧电极流入的电流分散到基板中，从而避免n侧电极附近的发热。在这种类型的半导体发光元件中，n侧电极的存在减少了发光面积。因此，n侧电极的长度优选为基板的整个周长的20〜50％。

6. 发明申请

US20100252855A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20100252855A1
公开(公告)日：2010-10-07
申请号：US12742559
申请日：2008-11-13
申请人： Hidenori Kamei
发明人： Hidenori Kamei
IPC分类号： H01L33/62
CPC分类号： H01L33/647 , H01L24/14 , H01L24/17 , H01L33/14 , H01L33/38 , H01L33/62 , H01L33/642 , H01L2224/0401 , H01L2224/05109 , H01L2224/05568 , H01L2224/05624 , H01L2224/05644 , H01L2224/05673 , H01L2224/0603 , H01L2224/06051 , H01L2224/06102 , H01L2224/1403 , H01L2224/1411 , H01L2224/14132 , H01L2224/14142 , H01L2224/14152 , H01L2224/14177 , H01L2224/14179 , H01L2224/16225 , H01L2224/16227 , H01L2224/17107 , H01L2224/81192 , H01L2924/00014 , H01L2924/0002 , H01L2924/01004 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2924/0105 , H01L2924/053 , H01L2924/00 , H01L2224/05552
摘要： In semiconductor light-emitting devices in which a light-emitting layer is formed on one surface of a substrate, and an n-side electrode and a p-side electrode are formed over the same surface of the substrate as the light-emitting layer, heat generated by a semiconductor light-emitting element needs to be dissipated to a submount. However, it is extremely complicated to fabricate connection members serving also as heat dissipating members and to control fabrication of the connection members, according to semiconductor light-emitting elements having electrodes of various sizes and shapes. By increasing the density of p-side bumps near the n-side electrode, the heat transfer area from the semiconductor light-emitting element to the submount is increased near the n-side electrode, whereby the heat dissipation effect is enhanced.
摘要翻译：在衬底的一个表面上形成发光层的半导体发光器件和在发光层的衬底的相同表面上形成n侧电极和p侧电极的半导体发光器件中，需要将由半导体发光元件产生的热耗散到基台。然而，根据具有各种尺寸和形状的电极的半导体发光元件，制造也用作散热构件的连接构件并且控制连接构件的制造是非常复杂的。通过增加n侧电极附近的p侧凸块的密度，在n侧电极附近增加了从半导体发光元件到副安装座的传热面积，从而提高了散热效果。

7. 发明申请

US20090101936A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND WAFER 有权
标题翻译：半导体发光元件和散热片
公开(公告)号：US20090101936A1
公开(公告)日：2009-04-23
申请号：US12298664
申请日：2007-04-27
申请人： Hidenori Kamei , Syuuichi Shinagawa
发明人： Hidenori Kamei , Syuuichi Shinagawa
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , H01L33/0095
摘要： There are provided a semiconductor light emitting element which allows an improvement in light extraction efficiency without increasing the number of fabrication steps, and a wafer. In a semiconductor light emitting element 1 formed by laminating a compound semiconductor layer 3 on a single crystal substrate, and dividing the single crystal substrate into pieces, the side faces 21 to 24 of each of substrate pieces 2 as the divided single crystal substrate are formed such that the side face 21 used as the reference of the substrate piece 2 forms an angle of 15° with respect to the (1-100) plane, and that the side faces 21 to 24 are formed of planes different from cleaved planes of a crystalline structure in the single crystal substrate.
摘要翻译：提供了一种半导体发光元件，其允许提高光提取效率而不增加制造步骤的数量和晶片。在通过在单晶衬底上层叠化合物半导体层3并将单晶衬底分割成块而形成的半导体发光元件1中，形成作为分割单晶衬底的每个衬底片2的侧面21至24 使得用作基板2的基准的侧面21相对于（1-100）面形成15°的角度，并且侧面21至24由与晶体结构在单晶衬底中。

8. 发明授权

US07002184B2 Light-emitting device comprising a gallum-nitride-group compound-semiconductor 有权
标题翻译：包含镓氮化物基化合物半导体的发光器件
公开(公告)号：US07002184B2
公开(公告)日：2006-02-21
申请号：US11022801
申请日：2004-12-28
申请人： Yasunari Oku , Hidenori Kamei
发明人： Yasunari Oku , Hidenori Kamei
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01S5/34333
摘要： In the light-emitting gallium-nitride-group compound semiconductor devices using a substrate, the operating voltage is lowered and at the same time the occurrence of crack during crystal growth is suppressed, resulting in an improved manufacturing yield rate. The device includes a stacked structure of an n-type layer, a light-emitting layer and a p-type layer formed in the foregoing order on a substrate, and an n-side electrode formed on the surface of the n-type layer. The n-type layer is a laminate layer composed of, in the order from the substrate, first n-type layer and a second n-type layer having a carrier concentration higher than that of the first n-type layer. As the contact resistance between the n-type layer and the n-side electrode formed thereon is reduced, the operating voltage of a light-emitting device is lowered, and the power consumption decreased.
摘要翻译：在使用基板的发光氮化镓族化合物半导体器件中，工作电压降低，同时抑制了晶体生长期间的裂纹的发生，从而提高了制造成品率。该装置包括在基板上以上述顺序形成的n型层，发光层和p型层的层叠结构，以及形成在n型层的表面上的n侧电极。 n型层是以从衬底的顺序构成第一n型层和具有比第一n型层的载流子浓度高的载流子浓度的第二n型层的层叠层。随着形成在其上的n型层和n侧电极之间的接触电阻减小，发光器件的工作电压降低，功耗降低。

9. 发明申请

US20050121681A1 Light-emitting device comprising a gallium-nitride-group compound-semiconductor 有权
公开(公告)号：US20050121681A1
公开(公告)日：2005-06-09
申请号：US11022801
申请日：2004-12-28
申请人： Yasunari Oku , Hidenori Kamei
发明人： Yasunari Oku , Hidenori Kamei
IPC分类号： H01L33/32 , H01S5/343 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01S5/34333
摘要： In the light-emitting gallium-nitride-group compound semiconductor devices using a substrate, the operating voltage is lowered and at the same time the occurrence of crack during crystal growth is suppressed, resulting in an improved manufacturing yield rate. The device includes a stacked structure of an n-type layer, a light-emitting layer and a p-type layer formed in the foregoing order on a substrate, and an n-side electrode formed on the surface of the n-type layer. The n-type layer is a laminate layer composed of, in the order from the substrate, first n-type layer and a second n-type layer having a carrier concentration higher than that of the first n-type layer. As the contact resistance between the n-type layer and the n-side electrode formed thereon is reduced, the operating voltage of a light-emitting device is lowered, and the power consumption decreased.

10. 发明授权

US06497944B1 Light-emitting device comprising a gallium-nitride-group compound-semiconductor 有权
标题翻译：包含氮化镓族化合物半导体的发光装置
公开(公告)号：US06497944B1
公开(公告)日：2002-12-24
申请号：US09219428
申请日：1998-12-23
申请人： Yasunari Oku , Hidenori Kamei
发明人： Yasunari Oku , Hidenori Kamei
IPC分类号： H01L3300
CPC分类号： H01L33/32 , B82Y20/00 , H01S5/34333 , Y10S428/917 , Y10T428/24942 , Y10T428/2495
摘要： In the light-emitting gallium-nitride-group compound semiconductor devices using an insulating substrate, the operating voltage is lowered and at the same time the occurrence of cracks during crystal growth is suppressed, resulting in an improved manufacturing yield rate. The device includes a stacked structure of an n-type layer, a light-emitting layer and a p-type layer formed in the foregoing order on an insulating substrate, and an n-side electrode formed on the surface of the n-type layer. The n-type layer is a laminate layer composed of, in the order from the substrate, a first n-type layer and a second n-type layer having a carrier concentration higher than that of the first n-type layer. As the contact resistance between the n-type layer and the n-side electrode formed thereon is reduced, the operating voltage of a light-emitting device is lowered, and the power consumption decreased.
摘要翻译：在使用绝缘性基板的发光氮化镓系化合物半导体装置中，工作电压降低，同时抑制了晶体生长期间的裂纹的发生，提高了制造成品率。该装置包括在绝缘基板上以上述顺序形成的n型层，发光层和p型层的层叠结构，以及形成在n型层的表面上的n侧电极。 n型层是以从衬底的顺序构成具有比第一n型层的载流子浓度高的载流子浓度的第一n型层和第二n型层的层叠层。随着形成在其上的n型层和n侧电极之间的接触电阻减小，发光器件的工作电压降低，功耗降低。

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