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1. 发明授权

US08367442B2 Method of manufacturing semiconductor light emitting element 有权
公开(公告)号：US08367442B2
公开(公告)日：2013-02-05
申请号：US12998521
申请日：2009-10-27
申请人： Kazuyuki Yamae , Hiroshi Fukshima , Masaharu Yasuda , Tomoya Iwahashi , Hidenori Kamei , Syuusaku Maeda
发明人： Kazuyuki Yamae , Hiroshi Fukshima , Masaharu Yasuda , Tomoya Iwahashi , Hidenori Kamei , Syuusaku Maeda
IPC分类号： H01L21/786
摘要： A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.

2. 发明申请

US20110263058A1 METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效
标题翻译：制造半导体发光元件的方法
公开(公告)号：US20110263058A1
公开(公告)日：2011-10-27
申请号：US12998521
申请日：2009-10-27
申请人： Kazuyuki Yamae , Hiroshi Fukshima , Masaharu Yasuda , Tomoya Iwahashi , Hidenori Kamei , Syuusaku Maeda
发明人： Kazuyuki Yamae , Hiroshi Fukshima , Masaharu Yasuda , Tomoya Iwahashi , Hidenori Kamei , Syuusaku Maeda
IPC分类号： H01L33/32
CPC分类号： H01S5/0207 , H01L33/0079 , H01L33/0095 , H01L33/32 , H01S5/0201 , H01S5/0202 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/02492 , H01S5/32341
摘要： A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.
摘要翻译：一种制造半导体发光元件的方法包括在具有透明性的第一晶片上形成多层氮化物半导体层的半导体层形成步骤; 将多层氮化物半导体层接合到第一晶片的接合步骤; 沟槽形成步骤，形成从第一晶片的下表面延伸到多层氮化物半导体层的凹槽; 施加步骤，通过所述第一晶片向所述多层氮化物半导体层的下表面施加第一光，以降低所述多层氮化物半导体层与所述第一晶片之间的结合力; 分离步骤，从所述多层氮化物半导体层分离所述第一晶片; 以及切割步骤，沿着所述凹槽切割所述第二晶片以分成多个所述半导体发光元件。

3. 发明申请

US20110297989A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110297989A1
公开(公告)日：2011-12-08
申请号：US13201853
申请日：2010-02-23
申请人： Akihiko Murai , Masaharu Yasuda , Tomoya Iwahashi , Kazuyuki Yamae
发明人： Akihiko Murai , Masaharu Yasuda , Tomoya Iwahashi , Kazuyuki Yamae
IPC分类号： H01L33/60
CPC分类号： H01L33/387 , H01L33/10 , H01L33/405 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2924/0002 , H01L2924/00
摘要： The light emitting device comprises a mounting substrate and an LED chip which comprises an n-type nitride semiconductor layer, a nitride light emission layer on the n-type nitride semiconductor layer, p-type nitride semiconductor layer on the nitride light emission layer, an anode electrode opposite of the nitride light emission layer from the p-type nitride semiconductor layer, and a cathode electrode on the n-type nitride semiconductor layer. The mounting substrate has a patterned conductor which is connected to the cathode electrode through a bump and also connected to the anode electrode through a bump. The LED chip further comprises one or more dielectric layer between the p-type nitride semiconductor layer and the anode electrode to have an arrangement which resembles an island. The p-type nitride semiconductor layer has a first region which is overlapped with the bump. The dielectric layer is not formed within the first region.
摘要翻译：发光装置包括安装基板和LED芯片，其包括n型氮化物半导体层，n型氮化物半导体层上的氮化物发光层，氮化物发光层上的p型氮化物半导体层，与p型氮化物半导体层的氮化物发光层相反的阳极电极以及n型氮化物半导体层上的阴极电极。安装基板具有图案化的导体，其通过凸块连接到阴极电极，并且还通过凸块连接到阳极电极。 LED芯片还包括在p型氮化物半导体层和阳极之间的一个或多个介电层，以具有类似于岛的布置。 p型氮化物半导体层具有与凸块重叠的第一区域。电介质层不形成在第一区域内。

4. 发明授权

US08049233B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08049233B2
公开(公告)日：2011-11-01
申请号：US11813370
申请日：2007-03-09
申请人： Hiroshi Fukshima , Masaharu Yasuda , Kazuyuki Yamae
发明人： Hiroshi Fukshima , Masaharu Yasuda , Kazuyuki Yamae
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/405 , H01L33/20 , H01L33/22 , H01L51/5268 , H01L51/5275 , H01L2933/0083
摘要： A light-emitting device of the present invention includes: a semiconductor layer 1 including a light-emitting layer 12; a recess/projection portion 14 including recesses and projections formed in a pitch larger than a wavelength of light emitted from the light-emitting layer 12, the recess/projection portion 14 being formed in a whole area or a partial area of the surface of the semiconductor layer which light is emitted from; and a reflective layer formed on an opposite surface of the semiconductor layer to the surface from which light is emitted, the reflective layer having a reflectance of 90% or more. According to the light-emitting device having such arrangement, the light can be emitted efficiently by synergetic effect of the reflective layer and the recess/projection portion.
摘要翻译：本发明的发光器件包括：包含发光层12的半导体层1; 凹部/突出部14，其包括以比从发光层12发射的光的波长大的间距形成的凹部和突起，凹部/突出部14形成在该发光层12的表面的整个区域或部分区域中发光的半导体层; 以及形成在所述半导体层的相对表面上的光的反射层，所述反射层的反射率为90％以上。根据具有这种配置的发光器件，可以通过反射层和凹凸部的协同效应有效地发射光。

5. 发明申请

US20110018024A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ILLUMINATING APPARATUS USING THE SAME 有权
标题翻译：使用相同的半导体发光元件和照明设备
公开(公告)号：US20110018024A1
公开(公告)日：2011-01-27
申请号：US12933749
申请日：2009-03-25
申请人： Hiroshi Fukshima , Kazuyuki Yamae , Masaharu Yasuda , Tomoya Iwahashi , Akihiko Murai
发明人： Hiroshi Fukshima , Kazuyuki Yamae , Masaharu Yasuda , Tomoya Iwahashi , Akihiko Murai
IPC分类号： H01L33/60
CPC分类号： H01L33/42 , H01L33/22 , H01L33/387 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting element, including: an n-type semiconductor layer having optical transparency with an emission wavelength of a light emitting layer, the light emitting layer and a p-type semiconductor layer, which are laminated; and a reflection film which is disposed on a side opposite to a surface from which light emitted from the light emitting layer is extracted, wherein the reflection film comprises: a transparent layer having optical transparency with the emission wavelength of the light emitting layer, and a metal layer, which is laminated on the transparent layer on a side opposite to the light emitting layer and is constituted by a metal material having a high reflectance, the transparent layer has a refractive index lower than a refractive index of a layer disposed on a side of the light emitting layer when viewed from the transparent layer, with the emission wavelength, and a thickness of the transparent layer is equal to or more than a value obtained by dividing a value of ¾ of the emission wavelength by the refractive index of the transparent layer.
摘要翻译：一种半导体发光元件，包括：层叠有具有发光层的发光波长的光学透明性的n型半导体层，发光层和p型半导体层; 以及反射膜，其设置在与从所述发光层发射的光的表面相反的一侧，所述反射膜包括：具有发光层的发光波长的光学透明性的透明层，以及金属层，其层叠在与发光层相反的一侧的透明层上，由具有高反射率的金属材料构成，透明层的折射率低于设置在侧面的层的折射率从透明层观察发光层的发光波长，并且透明层的厚度等于或大于通过将发射波长的¾的值除以透明层的折射率而获得的值层。

6. 发明申请

US20080051438A1 Preventive/Therapeutic Compositions Useful for Treating Cardiovascular Diseases 审中-公开
标题翻译：用于治疗心血管疾病的预防/治疗组合物
公开(公告)号：US20080051438A1
公开(公告)日：2008-02-28
申请号：US11837727
申请日：2007-08-13
申请人： Shinobu Nagahama , Takeo Norimatsu , Toshio Maki , Masaharu Yasuda , Shinsuke Tanaka
发明人： Shinobu Nagahama , Takeo Norimatsu , Toshio Maki , Masaharu Yasuda , Shinsuke Tanaka
IPC分类号： A61K31/44 , A61P9/12
CPC分类号： A61K31/44 , A61K45/06 , A61K2300/00
摘要： The present invention provides compositions that exert a superior hypotensive action while inhibiting an increase in heart rate. The present invention provides antihypertensives and preventive/therapeutic compositions useful in the treatment of cardiovascular diseases, which contain cilnidipine and at least one angiotensin II receptor blocker(s). The present invention also provides methods for treating cardiovascular diseases by administration of said compositions.
摘要翻译：本发明提供了在抑制心率增加的同时发挥优异的降压作用的组合物。本发明提供了可用于治疗心血管疾病的抗高血压药和预防/治疗组合物，其含有西尼地平和至少一种血管紧张素II受体阻断剂。本发明还提供了通过施用所述组合物治疗心血管疾病的方法。

7. 发明授权

US09018656B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US09018656B2
公开(公告)日：2015-04-28
申请号：US13201853
申请日：2010-02-23
申请人： Akihiko Murai , Masaharu Yasuda , Tomoya Iwahashi , Kazuyuki Yamae
发明人： Akihiko Murai , Masaharu Yasuda , Tomoya Iwahashi , Kazuyuki Yamae
IPC分类号： H01L33/00 , H01L33/38 , H01L33/40 , H01L33/62 , H01L33/10 , H01L33/44 , H01L33/64
CPC分类号： H01L33/387 , H01L33/10 , H01L33/405 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2924/0002 , H01L2924/00
摘要： The light emitting device comprises a mounting substrate and an LED chip which comprises an n-type nitride semiconductor layer, a nitride light emission layer on the n-type nitride semiconductor layer, p-type nitride semiconductor layer on the nitride light emission layer, an anode electrode opposite of the nitride light emission layer from the p-type nitride semiconductor layer, and a cathode electrode on the n-type nitride semiconductor layer. The mounting substrate has a patterned conductor which is connected to the cathode electrode through a bump and also connected to the anode electrode through a bump. The LED chip further comprises one or more dielectric layer between the p-type nitride semiconductor layer and the anode electrode to have an arrangement which resembles an island. The p-type nitride semiconductor layer has a first region which is overlapped with the bump. The dielectric layer is not formed within the first region.
摘要翻译：发光装置包括安装基板和LED芯片，其包括n型氮化物半导体层，n型氮化物半导体层上的氮化物发光层，氮化物发光层上的p型氮化物半导体层，与p型氮化物半导体层的氮化物发光层相反的阳极电极以及n型氮化物半导体层上的阴极电极。安装基板具有图案化的导体，其通过凸块连接到阴极电极，并且还通过凸块连接到阳极电极。 LED芯片还包括在p型氮化物半导体层和阳极之间的一个或多个介电层，以具有类似于岛的布置。 p型氮化物半导体层具有与凸块重叠的第一区域。电介质层不形成在第一区域内。

8. 发明申请

US20090267092A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20090267092A1
公开(公告)日：2009-10-29
申请号：US11813370
申请日：2007-03-09
申请人： Hiroshi Fukshima , Masaharu Yasuda , Kazuyuki Yamae
发明人： Hiroshi Fukshima , Masaharu Yasuda , Kazuyuki Yamae
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/20 , H01L33/22 , H01L51/5268 , H01L51/5275 , H01L2933/0083
摘要： A light-emitting device of the present invention includes: a semiconductor layer 1 including a light-emitting layer 12; a recess/projection portion 14 including recesses and projections formed in a pitch larger than a wavelength of light emitted from the light-emitting layer 12, the recess/projection portion 14 being formed in a whole area or a partial area of the surface of the semiconductor layer which light is emitted from; and a reflective layer formed on an opposite surface of the semiconductor layer to the surface from which light is emitted, the reflective layer having a reflectance of 90% or more. According to the light-emitting device having such arrangement, the light can be emitted efficiently by synergetic effect of the reflective layer and the recess/projection portion.
摘要翻译：本发明的发光器件包括：包含发光层12的半导体层1; 凹部/突出部14，其包括以比从发光层12发射的光的波长大的间距形成的凹部和突起，凹部/突出部14形成在该发光层12的表面的整个区域或部分区域中发光的半导体层; 以及形成在所述半导体层的相对表面上的光的反射层，所述反射层的反射率为90％以上。根据具有这种配置的发光器件，可以通过反射层和凹凸部的协同效应有效地发射光。

9. 发明授权

US08525204B2 Semiconductor light emitting element and illuminating apparatus using the same 有权
标题翻译：半导体发光元件及其使用的照明装置
公开(公告)号：US08525204B2
公开(公告)日：2013-09-03
申请号：US12933749
申请日：2009-03-25
申请人： Hiroshi Fukshima , Kazuyuki Yamae , Masaharu Yasuda , Tomoya Iwahashi , Akihiko Murai
发明人： Hiroshi Fukshima , Kazuyuki Yamae , Masaharu Yasuda , Tomoya Iwahashi , Akihiko Murai
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/22 , H01L33/387 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting element, including: an n-type semiconductor layer having optical transparency with an emission wavelength of a light emitting layer, the light emitting layer and a p-type semiconductor layer, which are laminated; and a reflection film which is disposed on a side opposite to a surface from which light emitted from the light emitting layer is extracted, wherein the reflection film comprises: a transparent layer having optical transparency with the emission wavelength of the light emitting layer, and a metal layer, which is laminated on the transparent layer on a side opposite to the light emitting layer and is constituted by a metal material having a high reflectance, the transparent layer has a refractive index lower than a refractive index of a layer disposed on a side of the light emitting layer when viewed from the transparent layer, with the emission wavelength, and a thickness of the transparent layer is equal to or more than a value obtained by dividing a value of ¾ of the emission wavelength by the refractive index of the transparent layer.
摘要翻译：一种半导体发光元件，包括：层叠有具有发光层的发光波长的光学透明性的n型半导体层，发光层和p型半导体层; 以及反射膜，其设置在与从所述发光层发射的光的表面相反的一侧，所述反射膜包括：具有发光层的发光波长的光学透明性的透明层，以及金属层，其层叠在与发光层相反的一侧的透明层上，由具有高反射率的金属材料构成，透明层的折射率低于设置在侧面的层的折射率从透明层观察发光层的发光波长，并且透明层的厚度等于或大于通过将发射波长的¾的值除以透明层的折射率而获得的值层。

10. 发明授权

US08399272B2 Method of manufacturing semiconductor light emitting element 失效
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08399272B2
公开(公告)日：2013-03-19
申请号：US12998521
申请日：2009-10-27
申请人： Kazuyuki Yamae , Hiroshi Fukshima , Masaharu Yasuda , Tomoya Iwahashi , Hidenori Kamei , Syuusaku Maeda
发明人： Kazuyuki Yamae , Hiroshi Fukshima , Masaharu Yasuda , Tomoya Iwahashi , Hidenori Kamei , Syuusaku Maeda
IPC分类号： H01L21/786
CPC分类号： H01S5/0207 , H01L33/0079 , H01L33/0095 , H01L33/32 , H01S5/0201 , H01S5/0202 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/02492 , H01S5/32341
摘要： A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.
摘要翻译：一种制造半导体发光元件的方法包括在具有透明性的第一晶片上形成多层氮化物半导体层的半导体层形成步骤; 将多层氮化物半导体层接合到第一晶片的接合步骤; 沟槽形成步骤，形成从第一晶片的下表面延伸到多层氮化物半导体层的凹槽; 施加步骤，通过所述第一晶片向所述多层氮化物半导体层的下表面施加第一光，以降低所述多层氮化物半导体层与所述第一晶片之间的结合力; 分离步骤，从所述多层氮化物半导体层分离所述第一晶片; 以及切割步骤，沿着所述凹槽切割所述第二晶片以分成多个所述半导体发光元件。

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