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1. 发明申请

US20110017991A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110017991A1
公开(公告)日：2011-01-27
申请号：US12934199
申请日：2009-02-27
申请人： Satoshi Tanimoto , Norihiko Kiritani , Toshiharu Makino , Masahiko Ogura , Norio Tokuda , Hiromitsu Kato , Hideyo Okushi , Satoshi Yamasaki
发明人： Satoshi Tanimoto , Norihiko Kiritani , Toshiharu Makino , Masahiko Ogura , Norio Tokuda , Hiromitsu Kato , Hideyo Okushi , Satoshi Yamasaki
IPC分类号： H01L29/12 , H01L29/06 , H01L29/22 , H01L29/16 , H01L29/24 , H01L29/20
CPC分类号： H01L29/861 , H01L29/1602 , H01L29/1608 , H01L29/20 , H01L29/2003 , H01L29/22 , H01L29/45 , H01L29/452 , H01L29/456 , H01L29/47 , H01L29/475 , H01L29/872
摘要： In this junction element 1, when a forward voltage is applied, a depletion layer is formed in a semiconductor layer 2, prohibiting electrons present in an electrode layer 4 to move into the semiconductor layer 2. For this reason, a majority of holes in a semiconductor layer 3 do not disappear by recombination with conduction electrons in the semiconductor layer 2, but reach the electrode layer 4 while diffusing into the semiconductor layer 2. Accordingly, the junction element 1 can serve as a good conductor for holes, while avoiding the influence of a resistance value, and allows a current to flow therethrough at a level equal to or more than that achieved by a semiconductor element formed of a Si or SiC semiconductor. The present invention is applicable to any semiconductor material in which at least one of a donor level and an acceptor level is located at a sufficiently deep position beyond a thermal excitation energy at an operating temperature, such as diamond, zinc oxide (ZnO), aluminum nitride (AlN), or boron nitride (BN). The present invention is also applicable to even a material having a shallow impurity level at room temperature, such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), or germanium (Ge), as long as operation is performed at such a low temperature that the thermal excitation energy can be sufficiently small.
摘要翻译：在该接合元件1中，当施加正向电压时，在半导体层2中形成耗尽层，禁止存在于电极层4中的电子移动到半导体层2中。因此，大部分孔半导体层3不会通过与半导体层2中的导电电子的复合而消失，而是在扩散到半导体层2中的同时到达电极层4.因此，接合元件1可以用作孔的良导体，同时避免影响的电阻值，并且允许电流以等于或大于由Si或SiC半导体形成的半导体元件实现的电平流过。本发明可应用于任何半导体材料，其中施主电平和受主电平中的至少一个位于超过工作温度下的热激发能的足够深的位置，例如金刚石，氧化锌（ZnO），铝氮化物（AlN）或氮化硼（BN）。本发明甚至也可应用于诸如硅（Si），碳化硅（SiC），氮化镓（GaN），砷化镓（GaAs）或锗（Ge）等室温下具有浅杂质水平的材料，只要在如此低的温度下进行操作即可使热激发能足够小。

2. 发明授权

US09136400B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09136400B2
公开(公告)日：2015-09-15
申请号：US12934199
申请日：2009-02-27
申请人： Satoshi Tanimoto , Norihiko Kiritani , Toshiharu Makino , Masahiko Ogura , Norio Tokuda , Hiromitsu Kato , Hideyo Okushi , Satoshi Yamasaki
发明人： Satoshi Tanimoto , Norihiko Kiritani , Toshiharu Makino , Masahiko Ogura , Norio Tokuda , Hiromitsu Kato , Hideyo Okushi , Satoshi Yamasaki
IPC分类号： H01L21/00 , H01L29/861 , H01L29/16 , H01L29/20 , H01L29/22 , H01L29/45 , H01L29/47 , H01L29/872
CPC分类号： H01L29/861 , H01L29/1602 , H01L29/1608 , H01L29/20 , H01L29/2003 , H01L29/22 , H01L29/45 , H01L29/452 , H01L29/456 , H01L29/47 , H01L29/475 , H01L29/872
摘要： In this junction element 1, when a forward voltage is applied, a depletion layer is formed in a semiconductor layer 2, prohibiting electrons present in an electrode layer 4 to move into the semiconductor layer 2. For this reason, a majority of holes in a semiconductor layer 3 do not disappear by recombination with conduction electrons in the semiconductor layer 2, but reach the electrode layer 4 while diffusing into the semiconductor layer 2. Accordingly, the junction element 1 can serve as a good conductor for holes, while avoiding the influence of a resistance value, and allows a current to flow therethrough at a level equal to or more than that achieved by a semiconductor element formed of a Si or SiC semiconductor. The present invention is applicable to any semiconductor material in which at least one of a donor level and an acceptor level is located at a sufficiently deep position beyond a thermal excitation energy at an operating temperature, such as diamond, zinc oxide (ZnO), aluminum nitride (AlN), or boron nitride (BN). The present invention is also applicable to even a material having a shallow impurity level at room temperature, such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), or germanium (Ge), as long as operation is performed at such a low temperature that the thermal excitation energy can be sufficiently small.
摘要翻译：在该接合元件1中，当施加正向电压时，在半导体层2中形成耗尽层，禁止存在于电极层4中的电子移动到半导体层2中。因此，大部分孔半导体层3不会通过与半导体层2中的导电电子的复合而消失，而是在扩散到半导体层2中的同时到达电极层4.因此，接合元件1可以用作孔的良导体，同时避免影响的电阻值，并且允许电流以等于或大于由Si或SiC半导体形成的半导体元件实现的电平流过。本发明可应用于任何半导体材料，其中施主电平和受主电平中的至少一个位于超过工作温度下的热激发能的足够深的位置，例如金刚石，氧化锌（ZnO），铝氮化物（AlN）或氮化硼（BN）。本发明甚至也可应用于诸如硅（Si），碳化硅（SiC），氮化镓（GaN），砷化镓（GaAs）或锗（Ge）等室温下具有浅杂质水平的材料，只要在如此低的温度下进行操作即可使热激发能足够小。

3. 发明授权

US08624263B2 Diamond semiconductor device and method of manufacturing the same 有权
标题翻译：金刚石半导体器件及其制造方法
公开(公告)号：US08624263B2
公开(公告)日：2014-01-07
申请号：US12988089
申请日：2009-03-06
申请人： Hiromitsu Kato , Toshiharu Makino , Masahiko Ogura , Hideyo Okushi , Satoshi Yamasaki
发明人： Hiromitsu Kato , Toshiharu Makino , Masahiko Ogura , Hideyo Okushi , Satoshi Yamasaki
IPC分类号： H01L29/16 , H01L21/02
CPC分类号： C30B29/04 , C30B25/02 , C30B25/105 , H01L21/02376 , H01L21/0243 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/041 , H01L21/042
摘要： The present invention is contemplated for providing a diamond semiconductor device where an impurity-doped diamond semiconductor is buried in a selected area, and a method of manufacturing the same. That is, a diamond semiconductor device having an impurity-doped diamond area selectively buried in a recessed portion formed in a diamond substrate; and a method of manufacturing a diamond semiconductor device, including the steps of selectively forming an recessed portion on the {100}-facet diamond semiconductor substrate, wherein the bottom face of the recessed portion is surrounded by the {100} facet and the side face of the recessed portion is surrounded by the {110} facet, and forming an impurity-doped diamond area by epitaxially growing diamond in the direction while doping with impurities and burying the recessed portion.
摘要翻译：本发明预期用于提供金刚石半导体器件，其中杂质掺杂的金刚石半导体被埋在所选择的区域中，及其制造方法。也就是说，具有掺杂金刚石区域的金刚石半导体器件选择性地埋在形成在金刚石衬底中的凹陷部分中; 以及制造金刚石半导体器件的方法，包括以下步骤：在{100}面金刚石半导体衬底上选择性地形成凹陷部分，其中凹陷部分的底面由{100}面和侧面凹陷部分被{110}面围绕，并且通过在<111>方向外延生长金刚石并掺杂杂质并埋入凹陷部分而形成杂质掺杂金刚石区域。

4. 发明申请

US20110037076A1 DIAMOND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：金刚石半导体器件及其制造方法
公开(公告)号：US20110037076A1
公开(公告)日：2011-02-17
申请号：US12988089
申请日：2009-03-06
申请人： Hiromitsu Kato , Toshiharu Makino , Masahiko Ogura , Hideyo Okushi , Satoshi Yamasaki
发明人： Hiromitsu Kato , Toshiharu Makino , Masahiko Ogura , Hideyo Okushi , Satoshi Yamasaki
IPC分类号： H01L29/16 , H01L21/02
CPC分类号： C30B29/04 , C30B25/02 , C30B25/105 , H01L21/02376 , H01L21/0243 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/041 , H01L21/042
摘要： The present invention is contemplated for providing a diamond semiconductor device where an impurity-doped diamond semiconductor is buried in a selected area, and a method of manufacturing the same.That is, a diamond semiconductor device having an impurity-doped diamond area selectively buried in a recessed portion formed in a diamond substrate; and a method of manufacturing a diamond semiconductor device, including the steps of selectively forming an recessed portion on the {100}-facet diamond semiconductor substrate, wherein the bottom face of the recessed portion is surrounded by the {100} facet and the side face of the recessed portion is surrounded by the {110} facet, and forming an impurity-doped diamond area by epitaxially growing diamond in the direction while doping with impurities and burying the recessed portion.
摘要翻译：本发明预期用于提供金刚石半导体器件，其中杂质掺杂的金刚石半导体被埋在所选择的区域中，及其制造方法。也就是说，具有掺杂金刚石区域的金刚石半导体器件选择性地埋在形成在金刚石衬底中的凹陷部分中; 以及制造金刚石半导体器件的方法，包括以下步骤：在{100}面金刚石半导体衬底上选择性地形成凹陷部分，其中凹陷部分的底面由{100}面和侧面凹陷部分被{110}面围绕，并且通过在<111>方向外延生长金刚石并掺杂杂质并埋入凹陷部分而形成杂质掺杂金刚石区域。

5. 发明授权

US08592824B2 High efficiency indirect transition semiconductor ultraviolet light emitting device 有权
标题翻译：高效间接转移半导体紫外线发光装置
公开(公告)号：US08592824B2
公开(公告)日：2013-11-26
申请号：US12438396
申请日：2007-08-13
申请人： Satoshi Yamasaki , Toshiharu Makino , Hideyo Ookushi , Norio Tokuda , Hiromitsu Kato , Masahiko Ogura , Hideyuki Watanabe , Sung-Gi Ri , Daisuke Takeuchi
发明人： Satoshi Yamasaki , Toshiharu Makino , Hideyo Ookushi , Norio Tokuda , Hiromitsu Kato , Masahiko Ogura , Hideyuki Watanabe , Sung-Gi Ri , Daisuke Takeuchi
IPC分类号： H01L29/15
CPC分类号： H01L33/34 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/38
摘要： Provided is a light emitting device formed of an indirect transition semiconductor configured from a semiconductor material having high exciton binding energy, wherein an active layer of the indirect transition semiconductor or an active region by a pn junction is formed, the light emitting device has an electrode for injecting current into the active layer or the active region, and the internal quantum efficiency is 10% or more.
摘要翻译：提供了由具有高激子结合能的半导体材料构成的间接跃迁半导体形成的发光器件，其中形成间接跃迁半导体的有源层或由pn结形成的有源区，该发光器件具有电极用于将电流注入有源层或有源区，内部量子效率为10％以上。

6. 发明申请

US20100001292A1 High Efficiency Indirect Transition Semiconductor Ultraviolet Light Emitting Device 有权
标题翻译：高效间接转换半导体紫外线发光装置
公开(公告)号：US20100001292A1
公开(公告)日：2010-01-07
申请号：US12438396
申请日：2007-08-13
申请人： Satoshi Yamasaki , Toshiharu Makino , Hideyo Ookushi , Norio Tokuda , Hiromitsu Kato , Masahiko Ogura , Hideyuki Watanabe , Sung-Gi Ri , Daisuke Takeuchi
发明人： Satoshi Yamasaki , Toshiharu Makino , Hideyo Ookushi , Norio Tokuda , Hiromitsu Kato , Masahiko Ogura , Hideyuki Watanabe , Sung-Gi Ri , Daisuke Takeuchi
IPC分类号： H01L33/00
CPC分类号： H01L33/34 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/38
摘要： Provided is a light emitting device formed of an indirect transition semiconductor configured from a semiconductor material having high exciton binding energy, wherein an active layer of the indirect transition semiconductor or an active region by a pn junction is formed, the light emitting device has an electrode for injecting current into the active layer or the active region, and the internal quantum efficiency is 10% or more.
摘要翻译：提供了由具有高激子结合能的半导体材料构成的间接跃迁半导体形成的发光器件，其中形成间接跃迁半导体的有源层或由pn结形成的有源区，该发光器件具有电极用于将电流注入有源层或有源区，内部量子效率为10％以上。

7. 发明授权

US4532373A Amorphous photovoltaic solar cell 失效
标题翻译：无定型光伏太阳能电池
公开(公告)号：US4532373A
公开(公告)日：1985-07-30
申请号：US589324
申请日：1984-03-14
申请人： Hideharu Matsuura , Kazunobu Tanaka , Akihisa Matsuda , Hideyo Okushi , Hidetoshi Oheda , Satoshi Yamasaki , Nobuhiro Hata
发明人： Hideharu Matsuura , Kazunobu Tanaka , Akihisa Matsuda , Hideyo Okushi , Hidetoshi Oheda , Satoshi Yamasaki , Nobuhiro Hata
IPC分类号： H01L31/04 , H01L31/0224 , H01L31/06 , H01L31/07
CPC分类号： H01L31/022425 , H01L31/06 , H01L31/07 , Y02E10/50
摘要： An amorphous photovoltaic energy conversion element for use in a solar cell is composed of a first layer formed of a p-type material, a second layer formed of an intrinsic amorphous semiconductor having a potential gradient formed therein and a third layer formed of a metal capable of coming into ohmic contact with the aforementioned intrinsic layer of amorphous semiconductor and exhibiting a lower work function than the work function of the intrinsic layer of amorphous semiconductor.
摘要翻译：用于太阳能电池的非晶形光伏能量转换元件由由p型材料形成的第一层，由其中形成有电位梯度的本征非晶半导体形成的第二层和由金属形成的第三层组成与上述非晶半导体本征层进行欧姆接触，并且具有比非晶半导体本征层的功函数更低的功函数。

8. 发明授权

US08876973B2 Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same 有权
标题翻译：掺杂有磷原子的n型（100）取向的单晶金刚石半导体的膜及其制造方法
公开(公告)号：US08876973B2
公开(公告)日：2014-11-04
申请号：US13344104
申请日：2012-01-05
申请人： Hiromitsu Kato , Satoshi Yamasaki , Hideyo Ookushi , Shinichi Shikata
发明人： Hiromitsu Kato , Satoshi Yamasaki , Hideyo Ookushi , Shinichi Shikata
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14 , B01J3/06 , B32B9/00 , C30B29/04 , C30B25/10 , C30B29/40 , C30B25/02 , C30B25/20 , H01L21/02 , C30B25/18
CPC分类号： C30B25/105 , C30B25/02 , C30B25/18 , C30B25/20 , C30B29/04 , C30B29/40 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/30
摘要： There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.
摘要翻译：提供了掺杂有磷原子的n型（100）取向的单晶金刚石半导体膜及其制造方法。 n型（100）取向单晶金刚石半导体膜，其特征在于（100）定向金刚石在这样的条件下外延生长在基板上; 金刚石基体是（100）取向的金刚石，用于化学气相沉积的方法在等离子气相中提供氢，烃和磷化合物，等离子体气相中的磷原子与碳原子的比例不小于0.1％碳原子数相对于氢原子的比例为0.05％以上，制造该氢原子的方法。

9. 发明申请

US20080193366A1 Film of N Type (100) Oriented Single Crystal Diamond Semiconductor Doped with Phosphorous Atoms, and a Method of Producing the Same 审中-公开
标题翻译：掺有磷原子的N型（100）取向的单晶金刚石半导体膜及其制造方法
公开(公告)号：US20080193366A1
公开(公告)日：2008-08-14
申请号：US11883488
申请日：2006-01-26
申请人： Hiromitsu Kato , Satoshi Yamasaki , Hideyo Ookushi , Shinichi Shikata
发明人： Hiromitsu Kato , Satoshi Yamasaki , Hideyo Ookushi , Shinichi Shikata
IPC分类号： C01B31/06 , C30B23/00
CPC分类号： C30B25/105 , C30B25/02 , C30B25/18 , C30B25/20 , C30B29/04 , C30B29/40 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/30
摘要： There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorus atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorus compound in the plasma vapor phase, the ratio of phosphorus atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.
摘要翻译：提供了掺杂有磷原子的n型（100）取向的单晶金刚石半导体膜及其制造方法。 n型（100）取向单晶金刚石半导体膜，其特征在于（100）定向金刚石在这样的条件下外延生长在基板上; 金刚石基板（100）取向金刚石，用于化学气相沉积的装置在等离子体气相中提供氢，烃和磷化合物，等离子体气相中磷原子与碳原子的比例不小于0.1％，和碳原子数与氢原子的比率为0.05％以上，制造方法为。

10. 发明申请

US20110175109A1 FILM OF N TYPE (100) ORIENTED SINGLE CRYSTAL DIAMOND SEMICONDUCTOR DOPED WITH PHOSPHOROUS ATOMS, AND A METHOD OF PRODUCING THE SAME 审中-公开
标题翻译：带有磷酸盐的N型（100）面向单晶金刚石半导体的薄膜及其制造方法
公开(公告)号：US20110175109A1
公开(公告)日：2011-07-21
申请号：US13074284
申请日：2011-03-29
申请人： Hiromitsu KATO , Satoshi Yamasaki , Hideyo Ookushi , Shinichi Shikata
发明人： Hiromitsu KATO , Satoshi Yamasaki , Hideyo Ookushi , Shinichi Shikata
IPC分类号： H01L29/16
CPC分类号： C30B25/105 , C30B25/02 , C30B25/18 , C30B25/20 , C30B29/04 , C30B29/40 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/30
摘要： There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.
摘要翻译：提供了掺杂有磷原子的n型（100）取向的单晶金刚石半导体膜及其制造方法。 n型（100）取向单晶金刚石半导体膜，其特征在于（100）定向金刚石在这样的条件下外延生长在基板上; 金刚石基体是（100）取向的金刚石，用于化学气相沉积的方法在等离子气相中提供氢，烃和磷化合物，等离子体气相中的磷原子与碳原子的比例不小于0.1％碳原子数相对于氢原子的比例为0.05％以上，制造该氢原子的方法。

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