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1. 发明授权

US08940266B2 Large diamond crystal substrates and methods for producing the same 有权
标题翻译：大型金刚石晶体基板及其制造方法
公开(公告)号：US08940266B2
公开(公告)日：2015-01-27
申请号：US12646163
申请日：2009-12-23
申请人： Hideaki Yamada , Akiyoshi Chayahara , Yoshiaki Mokuno , Shinichi Shikata
发明人： Hideaki Yamada , Akiyoshi Chayahara , Yoshiaki Mokuno , Shinichi Shikata
IPC分类号： B01J3/06 , C30B33/06 , C30B23/00 , B01J19/08 , C23C14/00 , C30B29/04 , C30B33/00 , C01B31/06 , C30B25/00
CPC分类号： C30B29/04 , C01B32/25 , C01B32/28 , C30B23/00 , C30B25/00 , C30B33/00 , C30B33/06
摘要： The present invention provides a method for producing a large substrate of single-crystal diamond, including the steps of preparing a plurality of single-crystal diamond layers separated form an identical parent substrate, placing the single-crystal diamond layers in a mosaic pattern on a flat support, and growing a single-crystal diamond by a vapor-phase synthesis method on faces of the single-crystal diamond layers where they have been separated from the parent substrate.According to the method of the invention, a mosaic single-crystal diamond having a large area and good quality can be produced relatively easily.
摘要翻译：本发明提供一种用于制造大型单晶金刚石基板的方法，包括以下步骤：制备从相同的母基板分离的多个单晶金刚石层，将单晶金刚石层以马赛克图案放置在平面支撑，并通过气相合成法在单晶金刚石层的与母体基底分离的面上生长单晶金刚石。根据本发明的方法，可以相对容易地制造面积大，质量好的马赛克单晶金刚石。

2. 发明授权

US08876973B2 Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same 有权
标题翻译：掺杂有磷原子的n型（100）取向的单晶金刚石半导体的膜及其制造方法
公开(公告)号：US08876973B2
公开(公告)日：2014-11-04
申请号：US13344104
申请日：2012-01-05
申请人： Hiromitsu Kato , Satoshi Yamasaki , Hideyo Ookushi , Shinichi Shikata
发明人： Hiromitsu Kato , Satoshi Yamasaki , Hideyo Ookushi , Shinichi Shikata
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14 , B01J3/06 , B32B9/00 , C30B29/04 , C30B25/10 , C30B29/40 , C30B25/02 , C30B25/20 , H01L21/02 , C30B25/18
CPC分类号： C30B25/105 , C30B25/02 , C30B25/18 , C30B25/20 , C30B29/04 , C30B29/40 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/30
摘要： There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.
摘要翻译：提供了掺杂有磷原子的n型（100）取向的单晶金刚石半导体膜及其制造方法。 n型（100）取向单晶金刚石半导体膜，其特征在于（100）定向金刚石在这样的条件下外延生长在基板上; 金刚石基体是（100）取向的金刚石，用于化学气相沉积的方法在等离子气相中提供氢，烃和磷化合物，等离子体气相中的磷原子与碳原子的比例不小于0.1％碳原子数相对于氢原子的比例为0.05％以上，制造该氢原子的方法。

3. 发明授权

US08075359B2 Phosphorus-doped diamond film allowing significantly reduced electron emission voltage, method for producing the same, and electron source using the same 有权
标题翻译：磷掺杂金刚石膜允许显着降低的电子发射电压，其制造方法和使用其的电子源
公开(公告)号：US08075359B2
公开(公告)日：2011-12-13
申请号：US12066976
申请日：2006-08-28
申请人： Takatoshi Yamada , Shinichi Shikata
发明人： Takatoshi Yamada , Shinichi Shikata
IPC分类号： H01J9/04 , H01J9/12
CPC分类号： H01J9/025 , C23C16/274 , C23C16/278 , H01J1/304 , H01J2201/30457
摘要： A phosphorus-doped diamond film, which contains phosphorus at a concentration of 1015 cm−3 or more, has a resistivity of 107 Ωcm or less, and allows the voltage for initiation of electron emission to be 30V or less. A method for producing the phosphorus-doped diamond film by growing a diamond film on a diamond substrate by chemical vapor deposition method in an atmosphere containing methane and hydrogen gases and phosphorus with the use of tertiary butyl phosphorus as a source of addition of phosphorus. A diamond electron source having an electrode and a substrate which contains the phosphorous-doped diamond film and emitting electron beams from the phosphorous-doped diamond film when voltage is applied between the electrode and the substrate.
摘要翻译：含有浓度为1015cm -3以上的磷的磷掺杂金刚石膜的电阻率为107Ω·cm以上，允许电子发射的电压为30V以下。通过在含有甲烷和氢气和磷的气氛中，通过化学气相沉积法在金刚石基底上生长金刚石膜，使用叔丁基磷作为磷的添加来生产磷掺杂金刚石膜的方法。一种金刚石电子源，具有电极和衬底，该电极和衬底包含磷掺杂金刚石膜，并且当电压施加在电极和衬底之间时，从掺杂磷的金刚石膜发射电子束。

4. 发明申请

US20100117098A1 SCHOTTKY ELECTRODE FOR DIAMOND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：肖特基电极用于金刚石半导体器件及其制造方法
公开(公告)号：US20100117098A1
公开(公告)日：2010-05-13
申请号：US12597578
申请日：2008-04-14
申请人： Kazuhiro Ikeda , Hitoshi Umezawa , Shinichi Shikata
发明人： Kazuhiro Ikeda , Hitoshi Umezawa , Shinichi Shikata
IPC分类号： H01L29/47 , H01L29/12 , H01L21/04
CPC分类号： H01L29/47 , C22C5/04 , H01L21/0435 , H01L29/1602 , H01L29/6603 , H01L29/872
摘要： To provide a Schottky electrode in a diamond semiconductor, which has a good adhesion properties to diamonds, has a contacting surface which does not become peeled due to an irregularity in an external mechanical pressure, does not cause a reduction in yield in a diode forming process and does not cause deterioration in current-voltage characteristics, and a method of manufacturing the Schottky electrode.A Schottky electrode which includes: scattered island-form pattern Pt-group alloy thin films which are formed on a diamond surface formed on a substrate, in which the Pt-group alloy includes 50 to 99.9 mass % of Pt and 0.1 to 50 mass % of Ru and/or Ir, or which includes electrodes in a scattered island pattern, including: scattered island-form pattern metal thin films which are formed on a diamond surface formed on a substrate and include one selected from Pt and Pd; and metal thin films which include one selected from Ru, Ir and Rh and are provided on all of the metal thin films which include one selected from Pt and Pd, and a method of manufacturing the Schottky electrode.
摘要翻译：为了在金刚石半导体中提供肖特基电极，该金刚石半导体具有良好的金刚石粘合性，具有由于外部机械压力不均匀而不会剥离的接触表面，在二极管形成过程中不会导致产率降低并且不会导致电流 - 电压特性的劣化，以及制造肖特基电极的方法。一种肖特基电极，其包括：形成在形成于基板上的金刚石表面上的散射岛状图案Pt族合金薄膜，其中Pt族合金包含Pt为50〜99.9质量％，0.1〜50质量％包括：散射岛状图案金属薄膜，其形成在形成于基板上的金刚石表面上，并且包括选自Pt和Pd中的一种; 以及包括选自Ru，Ir和Rh中的一种并且设置在包括选自Pt和Pd中的一种的所有金属薄膜上的金属薄膜和制造肖特基电极的方法。

5. 发明申请

US20090140263A1 METHOD FOR DIAMOND SURFACE TREATMENT AND DEVICE USING DIAMOND THIN FILM 审中-公开
标题翻译：金刚石表面处理方法和使用金刚石薄膜的器件
公开(公告)号：US20090140263A1
公开(公告)日：2009-06-04
申请号：US12300040
申请日：2007-04-27
申请人： Hitoshi Umezawa , Shinichi Shikata , Kazuhiro Ikeda
发明人： Hitoshi Umezawa , Shinichi Shikata , Kazuhiro Ikeda
IPC分类号： H01L29/16 , H01L21/22
CPC分类号： H01L29/1602 , H01L21/268 , H01L29/47 , H01L29/66143 , H01L29/868 , H01L29/872
摘要： A method for surface treatment of diamond comprising exposing the surface of diamond to UV light containing wavelengths of 172 nm to 184.9 nm and 253.7 nm at an integrated exposure of 10 to 5,000 J/cm2 in an environment of an atmosphere having an oxygen concentration of 20 to 100% and an ozone concentration of 10 to 500,000 ppm to adsorb oxygen on the surface of diamond.
摘要翻译：一种用于金刚石表面处理的方法，其特征在于，在氧浓度为20的气氛中，将金刚石的表面暴露于波长为172nm至184.9nm和253.7nm的紫外光，在10至5,000J / cm 2的整体曝光下至100％，臭氧浓度为10〜500,000ppm，以吸附金刚石表面的氧。

6. 发明申请

US20080193366A1 Film of N Type (100) Oriented Single Crystal Diamond Semiconductor Doped with Phosphorous Atoms, and a Method of Producing the Same 审中-公开
标题翻译：掺有磷原子的N型（100）取向的单晶金刚石半导体膜及其制造方法
公开(公告)号：US20080193366A1
公开(公告)日：2008-08-14
申请号：US11883488
申请日：2006-01-26
申请人： Hiromitsu Kato , Satoshi Yamasaki , Hideyo Ookushi , Shinichi Shikata
发明人： Hiromitsu Kato , Satoshi Yamasaki , Hideyo Ookushi , Shinichi Shikata
IPC分类号： C01B31/06 , C30B23/00
CPC分类号： C30B25/105 , C30B25/02 , C30B25/18 , C30B25/20 , C30B29/04 , C30B29/40 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/30
摘要： There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorus atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorus compound in the plasma vapor phase, the ratio of phosphorus atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.
摘要翻译：提供了掺杂有磷原子的n型（100）取向的单晶金刚石半导体膜及其制造方法。 n型（100）取向单晶金刚石半导体膜，其特征在于（100）定向金刚石在这样的条件下外延生长在基板上; 金刚石基板（100）取向金刚石，用于化学气相沉积的装置在等离子体气相中提供氢，烃和磷化合物，等离子体气相中磷原子与碳原子的比例不小于0.1％，和碳原子数与氢原子的比率为0.05％以上，制造方法为。

7. 发明授权

US06984918B1 Saw device 失效
标题翻译：锯装置
公开(公告)号：US06984918B1
公开(公告)日：2006-01-10
申请号：US10089804
申请日：2000-10-04
申请人： Akihiro Hachigo , Katsuhiro Itakura , Satoshi Fujii , Hideaki Nakahata , Shinichi Shikata
发明人： Akihiro Hachigo , Katsuhiro Itakura , Satoshi Fujii , Hideaki Nakahata , Shinichi Shikata
IPC分类号： H01L41/04 , H03H9/145
CPC分类号： H03H9/02582 , H03H9/02574
摘要： The present invention provides a surface acoustic wave device comprising a diamond, having operating frequencies in the range of several hundreds of MHz to several tens of GHz, and being capable of operating at high frequencies.The surface acoustic wave device of the present invention comprises a diamond layer or a substrate layer and a diamond layer, a ZnO piezoelectric layer, interdigital transducers and a short-circuit electrode layer, being characterized in that (2π·H/λM) is in the range of 3.0 to 10.0 where the thickness of the ZnO layer is H and the wavelength of the surface acoustic wave is λM.
摘要翻译：本发明提供一种表面声波装置，其包括金刚石，其工作频率在几百MHz至几十GHz的范围内，并且能够在高频下操作。本发明的声表面波器件包括金刚石层或基底层和金刚石层，ZnO压电层，叉指式换能器和短路电极层，其特征在于（2pi.H /λ< M 3）在3.0至10.0的范围内，其中ZnO层的厚度为H，声表面波的波长为λM。

8. 发明授权

US06710513B2 Surface acoustic wave device and substrate thereof 有权
标题翻译：声表面波器件及其衬底
公开(公告)号：US06710513B2
公开(公告)日：2004-03-23
申请号：US10203423
申请日：2002-08-08
申请人： Hideaki Nakahata , Akihiro Hachigo , Natsuo Tatsumi , Takahiro Imai , Shinichi Shikata
发明人： Hideaki Nakahata , Akihiro Hachigo , Natsuo Tatsumi , Takahiro Imai , Shinichi Shikata
IPC分类号： H03H925
CPC分类号： H03H9/02582 , H03H9/02574
摘要： Provided are a substrate for a surface-acoustic-wave device and a surface-acoustic-wave device, in which an intermediate layer for controlling crystal characteristics of a piezoelectric layer does not easily separate from a diamond layer. A surface-acoustic-wave device substrate 20 and a surface-acoustic-wave device 10, according to the present invention, comprises a diamond layer 22, an intermediate layer 24 disposed on the diamond layer 22, and a piezoelectric layer 26 disposed on the intermediate layer 24, the piezoelectric layer 26 being made of LiNbO3 or LiTaO3, the intermediate layer 24 being made of AlN.
摘要翻译：提供一种用于控制压电层的晶体特性的中间层不容易与金刚石层分离的表面声波器件和表面声波器件的基板。表面声波器件根据本发明的衬底20和表面声波器件10包括金刚石层22，设置在金刚石层22上的中间层24和设置在中间层24上的压电层26，压电层 26由LiNbO 3或LiTaO 3制成，中间层24由AlN制成。

9. 发明授权

US06469416B1 Surface acoustic wave device 有权
标题翻译：表面声波装置
公开(公告)号：US06469416B1
公开(公告)日：2002-10-22
申请号：US09959954
申请日：2001-11-13
申请人： Katsuhiro Itakura , Akihiro Hachigo , Hideaki Nakahata , Satoshi Fujii , Shinichi Shikata
发明人： Katsuhiro Itakura , Akihiro Hachigo , Hideaki Nakahata , Satoshi Fujii , Shinichi Shikata
IPC分类号： H03H925
CPC分类号： H03H9/02984 , H03H9/02574 , H03H9/02582
摘要： A surface acoustic wave (SAW) device is provided that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer 3; (b) a ZnO layer 4, with a thickness of tz, formed on the diamond layer 3; (c) interdigital transducers (IDTs) 5, which excite and receive a SAW, formed on the ZnO layer 4; and (d) an SiO2 layer 6, with a thickness of ts, formed on the ZnO layer 4 so that the SiO2 layer can cover the IDTs 5. The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1=5·2&pgr;·(tz/&lgr;) and kh2=5·2&pgr;(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second mode of the SAW. The SAW device uses the fifth harmonic of the second mode of the SAW.
摘要翻译：提供了适用于批量生产并且在超高频范围内具有优异的操作性能的表面声波（SAW）装置。 SAW器件包括（a）金刚石层3; （b）在金刚石层3上形成厚度为tz的ZnO层4; （c）在ZnO层4上形成的用于激发和接收SAW的叉指换能器（IDT）5; 和（d）在ZnO层4上形成厚度为ts的SiO 2层6，使得SiO 2层可以覆盖IDT 5. SAW器件的结构由参数kh1和kh2的特定数值范围确定，其方程式为kh1 = 5.2pi（tz / lambd）和kh2 = 5.2pi（ts / lambd），其中lambd表示SAW的第二模式的基波的波长。 SAW器件使用SAW的第二模式的第五谐波。

10. 发明授权

US06448688B2 Hard carbon film and surface-acoustic-wave substrate 失效
标题翻译：硬碳膜和表面声波衬底
公开(公告)号：US06448688B2
公开(公告)日：2002-09-10
申请号：US09739210
申请日：2000-12-19
申请人： Satoshi Fujii , Tomoki Uemura , Yuichiro Seki , Hideaki Nakahata , Shinichi Shikata
发明人： Satoshi Fujii , Tomoki Uemura , Yuichiro Seki , Hideaki Nakahata , Shinichi Shikata
IPC分类号： H01L4108
CPC分类号： C23C16/26 , H03H3/08 , H03H9/02582 , Y10T428/30
摘要： The invention offers a hard carbon film and a SAW substrate that are easy to fabricate or low in manufacturing cost while virtually maintaining the quality that affects the important properties of a device that comprises the hard carbon film or the SAW substrate. The hard carbon film comprises a composite film of graphite-like diamond and carbon clusters; the composite film has a continuous crystal structure.
摘要翻译：本发明提供容易制造或制造成本低的硬碳膜和SAW基板，同时实质上保持影响包括硬碳膜或SAW基板的装置的重要性能的质量。硬碳膜包括石墨状金刚石和碳簇的复合膜; 复合膜具有连续的晶体结构。

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