专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110017991A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110017991A1
公开(公告)日：2011-01-27
申请号：US12934199
申请日：2009-02-27
申请人： Satoshi Tanimoto , Norihiko Kiritani , Toshiharu Makino , Masahiko Ogura , Norio Tokuda , Hiromitsu Kato , Hideyo Okushi , Satoshi Yamasaki
发明人： Satoshi Tanimoto , Norihiko Kiritani , Toshiharu Makino , Masahiko Ogura , Norio Tokuda , Hiromitsu Kato , Hideyo Okushi , Satoshi Yamasaki
IPC分类号： H01L29/12 , H01L29/06 , H01L29/22 , H01L29/16 , H01L29/24 , H01L29/20
CPC分类号： H01L29/861 , H01L29/1602 , H01L29/1608 , H01L29/20 , H01L29/2003 , H01L29/22 , H01L29/45 , H01L29/452 , H01L29/456 , H01L29/47 , H01L29/475 , H01L29/872
摘要： In this junction element 1, when a forward voltage is applied, a depletion layer is formed in a semiconductor layer 2, prohibiting electrons present in an electrode layer 4 to move into the semiconductor layer 2. For this reason, a majority of holes in a semiconductor layer 3 do not disappear by recombination with conduction electrons in the semiconductor layer 2, but reach the electrode layer 4 while diffusing into the semiconductor layer 2. Accordingly, the junction element 1 can serve as a good conductor for holes, while avoiding the influence of a resistance value, and allows a current to flow therethrough at a level equal to or more than that achieved by a semiconductor element formed of a Si or SiC semiconductor. The present invention is applicable to any semiconductor material in which at least one of a donor level and an acceptor level is located at a sufficiently deep position beyond a thermal excitation energy at an operating temperature, such as diamond, zinc oxide (ZnO), aluminum nitride (AlN), or boron nitride (BN). The present invention is also applicable to even a material having a shallow impurity level at room temperature, such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), or germanium (Ge), as long as operation is performed at such a low temperature that the thermal excitation energy can be sufficiently small.
摘要翻译：在该接合元件1中，当施加正向电压时，在半导体层2中形成耗尽层，禁止存在于电极层4中的电子移动到半导体层2中。因此，大部分孔半导体层3不会通过与半导体层2中的导电电子的复合而消失，而是在扩散到半导体层2中的同时到达电极层4.因此，接合元件1可以用作孔的良导体，同时避免影响的电阻值，并且允许电流以等于或大于由Si或SiC半导体形成的半导体元件实现的电平流过。本发明可应用于任何半导体材料，其中施主电平和受主电平中的至少一个位于超过工作温度下的热激发能的足够深的位置，例如金刚石，氧化锌（ZnO），铝氮化物（AlN）或氮化硼（BN）。本发明甚至也可应用于诸如硅（Si），碳化硅（SiC），氮化镓（GaN），砷化镓（GaAs）或锗（Ge）等室温下具有浅杂质水平的材料，只要在如此低的温度下进行操作即可使热激发能足够小。

2. 发明申请

US20110037076A1 DIAMOND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：金刚石半导体器件及其制造方法
公开(公告)号：US20110037076A1
公开(公告)日：2011-02-17
申请号：US12988089
申请日：2009-03-06
申请人： Hiromitsu Kato , Toshiharu Makino , Masahiko Ogura , Hideyo Okushi , Satoshi Yamasaki
发明人： Hiromitsu Kato , Toshiharu Makino , Masahiko Ogura , Hideyo Okushi , Satoshi Yamasaki
IPC分类号： H01L29/16 , H01L21/02
CPC分类号： C30B29/04 , C30B25/02 , C30B25/105 , H01L21/02376 , H01L21/0243 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/041 , H01L21/042
摘要： The present invention is contemplated for providing a diamond semiconductor device where an impurity-doped diamond semiconductor is buried in a selected area, and a method of manufacturing the same.That is, a diamond semiconductor device having an impurity-doped diamond area selectively buried in a recessed portion formed in a diamond substrate; and a method of manufacturing a diamond semiconductor device, including the steps of selectively forming an recessed portion on the {100}-facet diamond semiconductor substrate, wherein the bottom face of the recessed portion is surrounded by the {100} facet and the side face of the recessed portion is surrounded by the {110} facet, and forming an impurity-doped diamond area by epitaxially growing diamond in the direction while doping with impurities and burying the recessed portion.
摘要翻译：本发明预期用于提供金刚石半导体器件，其中杂质掺杂的金刚石半导体被埋在所选择的区域中，及其制造方法。也就是说，具有掺杂金刚石区域的金刚石半导体器件选择性地埋在形成在金刚石衬底中的凹陷部分中; 以及制造金刚石半导体器件的方法，包括以下步骤：在{100}面金刚石半导体衬底上选择性地形成凹陷部分，其中凹陷部分的底面由{100}面和侧面凹陷部分被{110}面围绕，并且通过在<111>方向外延生长金刚石并掺杂杂质并埋入凹陷部分而形成杂质掺杂金刚石区域。

3. 发明授权

US09136400B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09136400B2
公开(公告)日：2015-09-15
申请号：US12934199
申请日：2009-02-27
申请人： Satoshi Tanimoto , Norihiko Kiritani , Toshiharu Makino , Masahiko Ogura , Norio Tokuda , Hiromitsu Kato , Hideyo Okushi , Satoshi Yamasaki
发明人： Satoshi Tanimoto , Norihiko Kiritani , Toshiharu Makino , Masahiko Ogura , Norio Tokuda , Hiromitsu Kato , Hideyo Okushi , Satoshi Yamasaki
IPC分类号： H01L21/00 , H01L29/861 , H01L29/16 , H01L29/20 , H01L29/22 , H01L29/45 , H01L29/47 , H01L29/872
CPC分类号： H01L29/861 , H01L29/1602 , H01L29/1608 , H01L29/20 , H01L29/2003 , H01L29/22 , H01L29/45 , H01L29/452 , H01L29/456 , H01L29/47 , H01L29/475 , H01L29/872
摘要： In this junction element 1, when a forward voltage is applied, a depletion layer is formed in a semiconductor layer 2, prohibiting electrons present in an electrode layer 4 to move into the semiconductor layer 2. For this reason, a majority of holes in a semiconductor layer 3 do not disappear by recombination with conduction electrons in the semiconductor layer 2, but reach the electrode layer 4 while diffusing into the semiconductor layer 2. Accordingly, the junction element 1 can serve as a good conductor for holes, while avoiding the influence of a resistance value, and allows a current to flow therethrough at a level equal to or more than that achieved by a semiconductor element formed of a Si or SiC semiconductor. The present invention is applicable to any semiconductor material in which at least one of a donor level and an acceptor level is located at a sufficiently deep position beyond a thermal excitation energy at an operating temperature, such as diamond, zinc oxide (ZnO), aluminum nitride (AlN), or boron nitride (BN). The present invention is also applicable to even a material having a shallow impurity level at room temperature, such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), or germanium (Ge), as long as operation is performed at such a low temperature that the thermal excitation energy can be sufficiently small.
摘要翻译：在该接合元件1中，当施加正向电压时，在半导体层2中形成耗尽层，禁止存在于电极层4中的电子移动到半导体层2中。因此，大部分孔半导体层3不会通过与半导体层2中的导电电子的复合而消失，而是在扩散到半导体层2中的同时到达电极层4.因此，接合元件1可以用作孔的良导体，同时避免影响的电阻值，并且允许电流以等于或大于由Si或SiC半导体形成的半导体元件实现的电平流过。本发明可应用于任何半导体材料，其中施主电平和受主电平中的至少一个位于超过工作温度下的热激发能的足够深的位置，例如金刚石，氧化锌（ZnO），铝氮化物（AlN）或氮化硼（BN）。本发明甚至也可应用于诸如硅（Si），碳化硅（SiC），氮化镓（GaN），砷化镓（GaAs）或锗（Ge）等室温下具有浅杂质水平的材料，只要在如此低的温度下进行操作即可使热激发能足够小。

4. 发明授权

US08624263B2 Diamond semiconductor device and method of manufacturing the same 有权
标题翻译：金刚石半导体器件及其制造方法
公开(公告)号：US08624263B2
公开(公告)日：2014-01-07
申请号：US12988089
申请日：2009-03-06
申请人： Hiromitsu Kato , Toshiharu Makino , Masahiko Ogura , Hideyo Okushi , Satoshi Yamasaki
发明人： Hiromitsu Kato , Toshiharu Makino , Masahiko Ogura , Hideyo Okushi , Satoshi Yamasaki
IPC分类号： H01L29/16 , H01L21/02
CPC分类号： C30B29/04 , C30B25/02 , C30B25/105 , H01L21/02376 , H01L21/0243 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/041 , H01L21/042
摘要： The present invention is contemplated for providing a diamond semiconductor device where an impurity-doped diamond semiconductor is buried in a selected area, and a method of manufacturing the same. That is, a diamond semiconductor device having an impurity-doped diamond area selectively buried in a recessed portion formed in a diamond substrate; and a method of manufacturing a diamond semiconductor device, including the steps of selectively forming an recessed portion on the {100}-facet diamond semiconductor substrate, wherein the bottom face of the recessed portion is surrounded by the {100} facet and the side face of the recessed portion is surrounded by the {110} facet, and forming an impurity-doped diamond area by epitaxially growing diamond in the direction while doping with impurities and burying the recessed portion.
摘要翻译：本发明预期用于提供金刚石半导体器件，其中杂质掺杂的金刚石半导体被埋在所选择的区域中，及其制造方法。也就是说，具有掺杂金刚石区域的金刚石半导体器件选择性地埋在形成在金刚石衬底中的凹陷部分中; 以及制造金刚石半导体器件的方法，包括以下步骤：在{100}面金刚石半导体衬底上选择性地形成凹陷部分，其中凹陷部分的底面由{100}面和侧面凹陷部分被{110}面围绕，并且通过在<111>方向外延生长金刚石并掺杂杂质并埋入凹陷部分而形成杂质掺杂金刚石区域。

5. 发明授权

US08592824B2 High efficiency indirect transition semiconductor ultraviolet light emitting device 有权
标题翻译：高效间接转移半导体紫外线发光装置
公开(公告)号：US08592824B2
公开(公告)日：2013-11-26
申请号：US12438396
申请日：2007-08-13
申请人： Satoshi Yamasaki , Toshiharu Makino , Hideyo Ookushi , Norio Tokuda , Hiromitsu Kato , Masahiko Ogura , Hideyuki Watanabe , Sung-Gi Ri , Daisuke Takeuchi
发明人： Satoshi Yamasaki , Toshiharu Makino , Hideyo Ookushi , Norio Tokuda , Hiromitsu Kato , Masahiko Ogura , Hideyuki Watanabe , Sung-Gi Ri , Daisuke Takeuchi
IPC分类号： H01L29/15
CPC分类号： H01L33/34 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/38
摘要： Provided is a light emitting device formed of an indirect transition semiconductor configured from a semiconductor material having high exciton binding energy, wherein an active layer of the indirect transition semiconductor or an active region by a pn junction is formed, the light emitting device has an electrode for injecting current into the active layer or the active region, and the internal quantum efficiency is 10% or more.
摘要翻译：提供了由具有高激子结合能的半导体材料构成的间接跃迁半导体形成的发光器件，其中形成间接跃迁半导体的有源层或由pn结形成的有源区，该发光器件具有电极用于将电流注入有源层或有源区，内部量子效率为10％以上。

6. 发明申请

US20100001292A1 High Efficiency Indirect Transition Semiconductor Ultraviolet Light Emitting Device 有权
标题翻译：高效间接转换半导体紫外线发光装置
公开(公告)号：US20100001292A1
公开(公告)日：2010-01-07
申请号：US12438396
申请日：2007-08-13
申请人： Satoshi Yamasaki , Toshiharu Makino , Hideyo Ookushi , Norio Tokuda , Hiromitsu Kato , Masahiko Ogura , Hideyuki Watanabe , Sung-Gi Ri , Daisuke Takeuchi
发明人： Satoshi Yamasaki , Toshiharu Makino , Hideyo Ookushi , Norio Tokuda , Hiromitsu Kato , Masahiko Ogura , Hideyuki Watanabe , Sung-Gi Ri , Daisuke Takeuchi
IPC分类号： H01L33/00
CPC分类号： H01L33/34 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/38
摘要： Provided is a light emitting device formed of an indirect transition semiconductor configured from a semiconductor material having high exciton binding energy, wherein an active layer of the indirect transition semiconductor or an active region by a pn junction is formed, the light emitting device has an electrode for injecting current into the active layer or the active region, and the internal quantum efficiency is 10% or more.
摘要翻译：提供了由具有高激子结合能的半导体材料构成的间接跃迁半导体形成的发光器件，其中形成间接跃迁半导体的有源层或由pn结形成的有源区，该发光器件具有电极用于将电流注入有源层或有源区，内部量子效率为10％以上。

7. 发明授权

US07384666B2 Method and apparatus for fabricating quantum dot functional structure, quantum dot functional structure, and optically functioning device 有权
标题翻译：用于制造量子点功能结构，量子点功能结构和光学功能器件的方法和装置
公开(公告)号：US07384666B2
公开(公告)日：2008-06-10
申请号：US10657248
申请日：2003-09-09
申请人： Nobuyasu Suzuki , Toshiharu Makino , Yuka Yamada , Takehito Yoshida , Takafumi Seto , Nobuhiro Aya
发明人： Nobuyasu Suzuki , Toshiharu Makino , Yuka Yamada , Takehito Yoshida , Takafumi Seto , Nobuhiro Aya
IPC分类号： B05D5/06
CPC分类号： B82Y30/00 , B22F9/12 , B22F2998/00 , B22F2999/00 , B82Y10/00 , C23C14/06 , C23C14/228 , C23C14/28 , H01L33/0054 , B22F1/0018 , B22F2202/11
摘要： Fabrication of a quantum dot functional structure having ultra-fine particles homogeneously distributed in a transparent medium includes depositing such particles having a single particle diameter and uniform structure onto a substrate with the transparent medium. An apparatus for fabricating a quantum dot functional structure comprises: a generating chamber for generating high-purity ultra-fine particles by exciting a semiconductor target with pulsed laser light in low-pressure rare gas, and then allowing the semiconductor target to be detached or ejected by ablation and condensed and grown in the gas; a particle classifying chamber for classifying the ultra-fine particles; a depositing chamber for depositing the high-purity semiconductor ultra-fine particles and the transparent medium by exciting a transparent medium target with excimer laser light simultaneously or alternately when the particles are collected onto the substrate, and by collecting the substance generated through ablation onto the substrate; and a carrier gas exhaust system.
摘要翻译：具有均匀分布在透明介质中的超细颗粒的量子点功能结构的制造包括使用透明介质将具有单一粒径和均匀结构的这种颗粒沉积在基板上。一种用于制造量子点功能结构的装置，其特征在于包括：通过在低压稀有气体中激发具有脉冲激光的半导体靶产生高纯度超细颗粒的发生室，然后允许半导体靶被分离或排出通过消融冷凝并在气体中生长; 用于分级超细颗粒的颗粒分级室; 用于通过同时或交替地将颗粒收集到基板上同时或交替地激发具有准分子激光的透明介质靶的沉积高纯度半导体超细颗粒和透明介质的沉积室，并且通过将通过烧蚀产生的物质收集到基质; 和载气排气系统。

8. 发明授权

US07099261B2 Light-emitting device and optical integrated device 失效
公开(公告)号：US07099261B2
公开(公告)日：2006-08-29
申请号：US10754504
申请日：2004-01-12
申请人： Takehito Yoshida , Yuka Yamada , Nobuyasu Suzuki , Toshiharu Makino
发明人： Takehito Yoshida , Yuka Yamada , Nobuyasu Suzuki , Toshiharu Makino
IPC分类号： G11B7/00
CPC分类号： H05B33/22 , G11B7/127 , H01L33/18 , H01S3/0637 , H01S3/169 , H01S5/183 , H01S5/18388 , H01S5/3031
摘要： In fabricating a monochromic and highly coherent light source, no single crystalline bulk semiconductor is used, but two different kinds of transparent substances are alternately stacked over each other to constitute a periodic structure in ½ of the intended wavelength. At least one of the two kinds of transparent substances is controllable in electric conductivity, and the structure is such that inside a medium consisting of this kind of transparent substance light-emitting semiconductor particulates are embedded. Accordingly, a light-emitting device has this structure, which makes possible control of the center wavelength of light emission, the width of wavelength distribution and coherence by adjusting the geometrical parameters of the device without having to alter the kind of material use.

9. 发明授权

US06648975B2 Method and apparatus for fabricating quantum dot functional structure, quantum dot functional structure, and optically functioning device 有权
标题翻译：用于制造量子点功能结构，量子点功能结构和光学功能器件的方法和装置
公开(公告)号：US06648975B2
公开(公告)日：2003-11-18
申请号：US09784300
申请日：2001-02-16
申请人： Nobuyasu Suzuki , Toshiharu Makino , Yuka Yamada , Takehito Yoshida , Takafumi Seto , Nobuhiro Aya
发明人： Nobuyasu Suzuki , Toshiharu Makino , Yuka Yamada , Takehito Yoshida , Takafumi Seto , Nobuhiro Aya
IPC分类号： C23C1400
CPC分类号： B82Y30/00 , B22F9/12 , B22F2998/00 , B22F2999/00 , B82Y10/00 , C23C14/06 , C23C14/228 , C23C14/28 , H01L33/0054 , B22F1/0018 , B22F2202/11
摘要： The present invention is to fabricate a quantum dot functional structure having ultra-fine particles homogeneously distributed in a transparent medium by efficiently fabricating high-purity ultra-fine particles having a single particle diameter and uniform structure and depositing the ultra-fine particles onto a substrate in conjunction with the transparent medium. For these purposes, an apparatus for fabricating a quantum dot functional structure is provided. The apparatus comprises: an ultra-fine particle generating chamber for generating high-purity ultra-fine particles by exciting a semiconductor target with pulsed laser light in a low-pressure rare gas atmosphere, and then by allowing the semiconductor target to be detached or ejected by ablation reaction and condensed and grown in the gas; an ultra-fine particle classifying chamber for classifying the ultra-file particles; a depositing chamber for depositing the high-purity semiconductor ultra-fine particles and the transparent medium by exciting a transparent medium target with excimer laser light at the same time or alternately when the high-purity semiconductor ultra-fine particles are collected onto the substrate, and by collecting the substance generated through ablation reaction onto the substrate; and a carrier gas exhaust system.
摘要翻译：本发明通过有效地制造具有单一粒径和均匀结构的高纯度超细颗粒，并将超细颗粒沉积到基底上，制造均匀分布在透明介质中的超细颗粒的量子点功能结构与透明介质一起使用。为了这些目的，提供了一种用于制造量子点功能结构的装置。该装置包括：超细颗粒发生室，用于通过在低压稀有气体气氛中用脉冲激光激发半导体靶，然后通过使半导体靶被分离或喷射而产生高纯度超细颗粒通过消融反应并在气体中冷凝和生长; 用于对超微粒子进行分类的超细粒子分级室; 用于通过同时激发具有准分子激光的透明介质靶或者当高纯度半导体超细颗粒被收集到基板上时交替沉积高纯度半导体超细颗粒和透明介质的沉积室，并通过将通过消融反应产生的物质收集到基底上; 和载气排气系统。

10. 发明申请

US20060187992A1 Light-emitting device and optical integrated device 失效
公开(公告)号：US20060187992A1
公开(公告)日：2006-08-24
申请号：US11408062
申请日：2006-04-21
申请人： Takehito Yoshida , Yuka Yamada , Nobuyasu Suzuki , Toshiharu Makino
发明人： Takehito Yoshida , Yuka Yamada , Nobuyasu Suzuki , Toshiharu Makino
IPC分类号： H01S5/00
CPC分类号： H05B33/22 , G11B7/127 , H01L33/18 , H01S3/0637 , H01S3/169 , H01S5/183 , H01S5/18388 , H01S5/3031
摘要： In fabricating a monochromic and highly coherent light source, no single crystalline bulk semiconductor is used, but two different kinds of transparent substances are alternately stacked over each other to constitute a periodic structure in ½ of the intended wavelength. At least one of the two kinds of transparent substances is controllable in electric conductivity, and the structure is such that inside a medium consisting of this kind of transparent substance light-emitting semiconductor particulates are embedded. Accordingly, a light-emitting device has this structure, which makes possible control of the center wavelength of light emission, the width of wavelength distribution and coherence by adjusting the geometrical parameters of the device without having to alter the kind of material use.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式