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1. 发明授权

US06713017B1 Metal-flake manufacturing apparatus 有权
标题翻译：金属片制造装置
公开(公告)号：US06713017B1
公开(公告)日：2004-03-30
申请号：US09868905
申请日：2001-07-09
申请人： Hiroki Yoshizawa , Kenji Matsuda , Kiyoshi Nebashi
发明人： Hiroki Yoshizawa , Kenji Matsuda , Kiyoshi Nebashi
IPC分类号： B22D1106
CPC分类号： B22F9/10 , B22F1/004 , B22F2009/086 , B22F2009/0896
摘要： Cooling rolls are spaced to have a gas of a size greater than thickness of metal thin bodies to be produced. A nozzle is arranged to eject molten metal onto a surface of the cooling roll. The first cooling roll quenches molten metal ejected from the nozzle into metal thin bodies. On the next cooling roll, the produced metal thin bodies are hit into flakes and excessive molten metal is made into metal thin bodies. Thus, freedom of supplying the molten metal flakes can be efficiently produced.
摘要翻译：间隔开的冷却辊具有比要生产的金属薄体厚度大的气体。布置喷嘴以将熔融金属喷射到冷却辊的表面上。第一冷却辊将从喷嘴喷出的熔融金属淬火成金属薄体。在下一个冷却辊上，所生产的金属薄体被撞击成薄片，过多的熔融金属制成金属薄体。因此，能够有效地制造供给熔融金属薄片的自由度。

2. 发明授权

US08692103B2 Thermoelectric semiconductor material, thermoelectric semiconductor element using thermoelectric semiconductor material, thermoelectric module using thermoelectric semiconductor element and manufacturing method for same 有权
标题翻译：热电半导体材料，使用热电半导体材料的热电半导体元件，使用热电半导体元件的热电模块及其制造方法
公开(公告)号：US08692103B2
公开(公告)日：2014-04-08
申请号：US13083666
申请日：2011-04-11
申请人： Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
发明人： Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
IPC分类号： H01L35/34
CPC分类号： H01L35/34 , B22D11/0611 , H01L35/16
摘要： A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 μm. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10. As a result, a thermoelectric semiconductor 17 having crystal orientation in which extending direction of C face and the direction of c-axis of the hexagonal structure are approximately aligned. As a result, the crystalline orientation is improved, and the thermoelectric Figure-of-Merit is increased.
摘要翻译：制备金属混合物，其中向（Bi-Sb）2Te3基组合物中加入过量的Te。在熔融金属混合物之后，熔融金属在圆周速度不高于5m / sec的冷却辊的表面上固化，从而具有不小于30μm的厚度。因此，制造了板状的原料热电半导体材料10，其中Te富相显微分散在复合化合物半导体相中，并且大部分晶粒的C面的延伸方向均匀取向。原料热电半导体材料10在板厚方向上层叠。并且层叠体被固化并形成以形成紧凑体12.此后，压块12塑性变形，使得剪切力沿大致平行于原料热电偶的主层叠方向的单轴方向施加半导体材料10.结果，具有晶体取向的热电半导体17，其中C面的延伸方向和六边形结构的c轴的方向近似对准。结果，晶体取向得到改善，并且热电式的品质提高。

3. 发明申请

US20120037070A1 DISCHARGE SURFACE TREATMENT ELECTRODE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：放电表面处理电极及其制造方法
公开(公告)号：US20120037070A1
公开(公告)日：2012-02-16
申请号：US13264002
申请日：2010-04-13
申请人： Hiroki Yoshizawa , Satoshi Kurita , Mitsutoshi Watanabe , Kyouhei Nomura , Yukihiro Shimoda , Nobuhiko Yunoki , Masanobu Hasegawa
发明人： Hiroki Yoshizawa , Satoshi Kurita , Mitsutoshi Watanabe , Kyouhei Nomura , Yukihiro Shimoda , Nobuhiko Yunoki , Masanobu Hasegawa
IPC分类号： B05C9/00 , B05C11/00 , B22F3/12
CPC分类号： C23C26/00 , B22F1/0007 , B22F9/026 , B22F9/082 , B22F9/305 , B22F2009/044 , B22F2998/10 , C22C19/03 , C22C19/051 , C22C19/07 , C22C33/0207 , C22C38/30 , B22F3/02 , B22F3/10 , B22F9/02 , B22F9/16
摘要： A discharge surface treatment electrode used in discharge surface treatment for forming a wear-resistant film on a treatment target surface of a workpiece by use of the discharge energy of electric discharges caused between the electrode and the workpiece, the film being made of a material of an electrode or a substance obtained by a reaction of the material of the electrode with the discharge energy. The discharge surface treatment electrode is formed by: compression-molding a mixed powder into a green compact, the mixed powder being formed from a powder of a Stellite alloy with an average particle size of 3 μm or less prepared by use of a jet mill and a powder of a metal with an average particle size of 3 μm or less manufactured through an atomization process or a chemical process; and subjecting the green compact to heat treatment.
摘要翻译：一种用于放电表面处理的放电表面处理电极，用于通过使用在电极和工件之间产生的放电的放电能量在工件的处理目标表面上形成耐磨膜，该膜由材料制成通过电极材料与放电能量的反应获得的电极或物质。放电表面处理电极通过以下方式形成：将混合粉末压成型成生坯，所述混合粉末由使用喷射磨机制备的平均粒径为3μm以下的Stellite合金粉末形成，通过雾化法或化学法制造平均粒径为3μm以下的金属粉末; 并对生坯进行热处理。

4. 发明申请

US20110232108A1 CUTTING INSTRUMENT 有权
标题翻译：切割仪器
公开(公告)号：US20110232108A1
公开(公告)日：2011-09-29
申请号：US12994032
申请日：2008-10-02
申请人： Hiroyuki Ochiai , Mitsutoshi Watanabe , Takashi Furukawa , Hiroki Yoshizawa , Yukihiro Shimoda , Sadao Doi
发明人： Hiroyuki Ochiai , Mitsutoshi Watanabe , Takashi Furukawa , Hiroki Yoshizawa , Yukihiro Shimoda , Sadao Doi
IPC分类号： B25G3/00
CPC分类号： B26B9/00 , C23C26/00 , C23C30/005
摘要： A cutting instrument (1) has a cutting blade portion (13) formed with a skin (7) made of an electrode material or a reaction product of the electrode material, the electrode material having been molten by pulse discharges induced between the cutting blade portion (13) and an electrode in a machining liquid or gas, having as the electrode one of a mold molded from powder of a kind or powder of a mixture of kinds out of a metal or metals, a metal compound or metal compounds, and a ceramic or ceramics, and a heat-treated mold being the mold as heat-treated.
摘要翻译：切割器具（1）具有切割刀片部分（13），该切割刀片部分形成有由电极材料制成的皮肤（7）或电极材料的反应产物，所述电极材料已经通过在切割刀片部分（13）和机械液体或气体中的电极，具有作为电极之一的电极，所述电极由金属或金属种类或粉末的粉末成型的模具，金属化合物或金属化合物，以及陶瓷或陶瓷，以及作为热处理的模具的热处理模具。

5. 发明申请

US20100101752A1 OPERATING METHOD FOR TWIN-ROLL CASTING MACHINE, AND SIDE WEIR SUPPORTING DEVICE 有权
标题翻译：双辊铸造机的操作方法和侧面支撑装置
公开(公告)号：US20100101752A1
公开(公告)日：2010-04-29
申请号：US12524664
申请日：2008-01-31
申请人： Hiroyuki Otsuka , Katsumi Nakayama , Hiroki Yoshizawa
发明人： Hiroyuki Otsuka , Katsumi Nakayama , Hiroki Yoshizawa
IPC分类号： B22D11/06
CPC分类号： B22D11/066
摘要： Intended is to acquire a strip with less thickness even if arcuate wear steps are formed on side weirs.During an operation of a twin-roll casting machine with arcuate wear steps 6 developing on side weirs 2 due to rotational sliding contact of chilled rolls 1, where thickness of a steel strip 3 from a nip G is to be reduced, center-to-center distance L between the rolls 1 is reduced with the side weirs 2 in contact with ends of the rolls being displaced upward. This prevents interference of outer peripheries of the rolls 1 with boundary surfaces 8 adjacent to the arcuate wear steps 6 of the side weirs 2.
摘要翻译：即使在侧面堰上形成弓形磨损步骤，也希望获得厚度较小的钢带。在具有弓形磨损步骤6的双辊铸造机的操作期间，由于冷轧辊1的旋转滑动接触而在侧堰2上显影，其中来自压区G的钢带3的厚度将被减小，辊1之间的中心距离L随着与辊的端部向上移位接触的侧堰2而减小。这防止了辊1的外周边缘与侧堰2的弧形磨损步骤6相邻的边界面8的干涉。

6. 发明申请

US20060243314A1 Thermoelectric semiconductor material, thermoelectric semiconductor element therefrom, thermoelectric module including thermoelectric semiconductor element and process for producing these 审中-公开
标题翻译：热电半导体材料，其热电半导体元件，包括热电半导体元件的热电模块及其制造方法
公开(公告)号：US20060243314A1
公开(公告)日：2006-11-02
申请号：US10555855
申请日：2004-05-07
申请人： Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
发明人： Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
IPC分类号： H01L35/00
CPC分类号： H01L35/34 , B22D11/0611 , H01L35/16
摘要： A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 μm. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10. As a result, a thermoelectric semiconductor 17 having crystal orientation in which extending direction of C face and the don of c-axis of the hexagonal structure are approximately aligned. As a result, the crystalline orientation is improved, and the thermoelectric Figure-of-Merit is increased.
摘要翻译：制备金属混合物，其中将过量的Te加入到基于（Bi-Sb）2 N 3基团的组合物中。在熔融金属混合物之后，熔融金属在圆周速度不高于5m / sec的冷却辊的表面上固化，从而具有不小于30μm的厚度。因此，制造了板状的原料热电半导体材料10，其中Te富相显微分散在复合化合物半导体相中，并且大部分晶粒的C面的延伸方向均匀取向。原料热电半导体材料10在板厚方向上层叠。并且层状体被固化并形成以形成紧凑的12。之后，紧凑体12以这样的方式发生塑性变形，使得剪切力沿大致平行于原料热电半导体材料10的主层叠方向的单轴方向施加。结果，具有晶面取向的热电半导体17，其中C面的延伸方向和六边形结构的c轴的大致对准。结果，晶体取向得到改善，并且热电式的品质提高。

7. 发明授权

US09234295B2 Method for forming oxidation resistant coating layer 有权
标题翻译：抗氧化涂层形成方法
公开(公告)号：US09234295B2
公开(公告)日：2016-01-12
申请号：US13637167
申请日：2011-03-23
申请人： Akihiro Sato , Yoshihiro Tsuda , Hiroaki Iwata , Akira Tateno , Hiroki Yoshizawa , Tetsuji Hirato
发明人： Akihiro Sato , Yoshihiro Tsuda , Hiroaki Iwata , Akira Tateno , Hiroki Yoshizawa , Tetsuji Hirato
IPC分类号： C25D5/50 , C25D3/44
CPC分类号： C25D5/50 , C23C10/30 , C25D3/44
摘要： The method of forming an oxidation resistant coating layer is for forming an oxidation resistant coating layer containing aluminum on a surface layer of a member (A) formed of metallic material. The method includes a plating treatment step (S1) of plating aluminum on a surface of the member (A) in a solvent, and a heat treatment step (S2) of heat-treating the member (A) whose surface has been plated by the plating treatment step (S1).
摘要翻译：形成抗氧化涂层的方法是在由金属材料形成的部件（A）的表面层上形成含有铝的抗氧化涂层。该方法包括在溶剂中在构件（A）的表面上电镀铝的电镀处理工序（S1）和热处理工序（S2），其对表面进行镀覆的构件（A）进行热处理电镀处理工序（S1）。

8. 发明申请

US20110180121A1 THERMOELECTRIC SEMICONDUCTOR MATERIAL, THERMOELECTRIC SEMICONDUCTOR ELEMENT USING THERMOELECTRIC SEMICONDUCTOR MATERIAL, THERMOELECTRIC MODULE USING THERMOELECTRIC SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD FOR SAME 有权
标题翻译：热电半导体材料，使用热电半导体材料的热电半导体元件，使用热电半导体元件的热电模块及其制造方法
公开(公告)号：US20110180121A1
公开(公告)日：2011-07-28
申请号：US13083666
申请日：2011-04-11
申请人： Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
发明人： Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
IPC分类号： H01L35/16
CPC分类号： H01L35/34 , B22D11/0611 , H01L35/16
摘要： A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 μm. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10. As a result, a thermoelectric semiconductor 17 having crystal orientation in which extending direction of C face and the direction of c-axis of the hexagonal structure are approximately aligned. As a result, the crystalline orientation is improved, and the thermoelectric Figure-of-Merit is increased.
摘要翻译：制备金属混合物，其中向（Bi-Sb）2Te3基组合物中加入过量的Te。在熔融金属混合物之后，熔融金属在圆周速度不高于5m / sec的冷却辊的表面上固化，从而具有不小于30μm的厚度。因此，制造了板状的原料热电半导体材料10，其中Te富相显微分散在复合化合物半导体相中，并且大部分晶粒的C面的延伸方向均匀取向。原料热电半导体材料10在板厚方向上层叠。并且层叠体被固化并形成以形成紧凑体12.之后，压块12塑性变形，使得剪切力沿大致平行于原料热电偶的主层叠方向的单轴方向施加半导体材料10.结果，具有晶体取向的热电半导体17，其中C面的延伸方向和六边形结构的c轴的方向近似对准。结果，晶体取向得到改善，并且热电式的品质提高。

9. 发明申请

US20100330302A1 DISCHARGE SURFACE TREATMENT METHOD AND COATING BLOCK FOR DISCHARGE SURFACE TREATMENTS 审中-公开
标题翻译：放电表面处理放电表面处理方法和涂层
公开(公告)号：US20100330302A1
公开(公告)日：2010-12-30
申请号：US12865040
申请日：2009-01-30
申请人： Mitsutoshi Watanabe , Hiroyuki Ochiai , Hiroki Yoshizawa , Yukihiro Shimoda , Masayoshi Shiino
发明人： Mitsutoshi Watanabe , Hiroyuki Ochiai , Hiroki Yoshizawa , Yukihiro Shimoda , Masayoshi Shiino
IPC分类号： B05D5/12 , H01B1/22
CPC分类号： H01B1/08 , C23C26/00
摘要： Employing a compact molded from powder of metal or the like as an electrode 11, generating pulsed discharges between the electrode 11 and a treating portion Wa of work W in working oil L as a mixture with powder of semiconductor or conductor mixed therein, using discharge energy thereof for locally fusing surface regions of the treating portion Wa of work W, showering molten pieces of electrode material or reactants of the electrode material onto the treating portion Wa of work W, forming a covering film C on the treating portion Wa of work W.
摘要翻译：使用由金属等的粉末成型的紧凑件作为电极11，在电极11与工作油中的工件W的处理部分Wa之间产生脉冲排放，作为混合有半导体或导体的粉末的工作油L，使用放电能量用于将工件W的处理部分Wa的表面区域局部熔合，将电极材料的熔融片或电极材料的反应物溅射到工件W的处理部分Wa上，在工件W的处理部分Wa上形成覆盖膜C.

10. 发明授权

US07763349B2 Protective coating and metal structure 失效
标题翻译：保护涂层和金属结构
公开(公告)号：US07763349B2
公开(公告)日：2010-07-27
申请号：US11854827
申请日：2007-09-13
申请人： Hiroyuki Ochiai , Hiroki Yoshizawa , Mitsutoshi Watanabe , Takashi Furukawa , Issei Otera
发明人： Hiroyuki Ochiai , Hiroki Yoshizawa , Mitsutoshi Watanabe , Takashi Furukawa , Issei Otera
IPC分类号： B32B3/26
CPC分类号： C23C26/02 , C23C24/06 , C23C26/00 , C23C30/00 , Y10T428/249956 , Y10T428/249957 , Y10T428/249961 , Y10T428/249986 , Y10T428/249987 , Y10T428/249988
摘要： A protective coating for protecting a component of a gas turbine engine or such from wear is provided with a base coating consisting essentially of metal and including a pore, and a spherical particle filling the pore, at least a surface of which consists essentially of a ceramic.
摘要翻译：提供了用于保护燃气涡轮发动机的部件或其磨损的保护涂层，其具有基本上由金属组成并包括孔的基底涂层和填充孔的球形颗粒，至少其表面基本上由陶瓷。

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