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1. 发明授权

US4655854A Grain-oriented silicon steel sheet having a low iron loss free from deterioration due to stress-relief annealing and a method of producing the same 失效
公开(公告)号：US4655854A
公开(公告)日：1987-04-07
申请号：US663385
申请日：1984-10-22
申请人： Ujihiro Nishiike , Michiro Komatsubara , Yoshiaki Iida , Isao Matoba
发明人： Ujihiro Nishiike , Michiro Komatsubara , Yoshiaki Iida , Isao Matoba
IPC分类号： C21D8/12 , H01F1/147 , H01F1/16 , H01F1/04
CPC分类号： C21D8/1294 , H01F1/14783 , H01F1/16
摘要： A grain-oriented silicon steel sheet having a low iron loss free from deterioration due to the stress-relief annealing, can be obtained by forming on its surface a forsterite film locally having regions, which have a thickness different from that of the remaining regions in the film, or locally having filmless regions which do not coat the steel sheet surface.

2. 发明授权

US5620533A Method for making grain-oriented silicon steel sheet having excellent magnetic properties 失效
标题翻译：制造具有优异磁特性的晶粒取向硅钢板的方法
公开(公告)号：US5620533A
公开(公告)日：1997-04-15
申请号：US533841
申请日：1995-09-26
申请人： Keisuke Kotani , Mitsumasa Kurosawa , Masaki Kawano , Hirotake Ishitobi , Masayuki Sakaguchi , Takafumi Suzuki , Ujihiro Nishiike
发明人： Keisuke Kotani , Mitsumasa Kurosawa , Masaki Kawano , Hirotake Ishitobi , Masayuki Sakaguchi , Takafumi Suzuki , Ujihiro Nishiike
IPC分类号： C21D3/04 , C21D8/12 , H01F1/04
CPC分类号： C21D3/04 , C21D8/1255
摘要： A method for producing a grain-oriented silicon steel sheet in the coil shape having high magnetic induction and including AlN and MnSe as principal inhibitors is disclosed. In a series of processes for producing a grain-oriented silicon steel sheet, the oxide content on the steel sheet surface is controlled within a range of about 0.02 to 0.10 g/m.sup.2 before the temperature elevation phase of a decarburization annealing process, and the ratio of the steam partial pressure to the hydrogen partial pressure is controlled within a range of about 0.2 to 0.65 at a steel sheet surface temperature ranging from about 500.degree. to 750.degree. C. during the temperature elevation phase in a decarburization annealing process. The method promotes stable secondary recrystallized grain formation even in different coils or at different places in the same coil, such that fluctuation of magnetic properties is depressed.
摘要翻译：公开了一种具有高磁感应线圈形状并包括AlN和MnSe作为主要抑制剂的晶粒取向硅钢板的制造方法。在一系列用于制造晶粒取向硅钢板的方法中，在脱碳退火工序的升温阶段之前，将钢板表面的氧化物含量控制在约0.02〜0.10g / m 2的范围内，在脱碳退火过程的升温阶段期间，在约500〜750℃的钢板表面温度下，将蒸汽分压至氢分压控制在约0.2〜0.65的范围内。该方法即使在不同的线圈或相同线圈中的不同位置也促进稳定的二次再结晶晶粒形成，使得磁性的波动被抑制。

3. 发明授权

US5342454A Method of producing grain oriented silicon steel sheet having low iron loss 失效
标题翻译：低铁损晶粒取向硅钢板的制造方法
公开(公告)号：US5342454A
公开(公告)日：1994-08-30
申请号：US931682
申请日：1992-08-18
申请人： Yasuyuki Hayakawa , Ujihiro Nishiike , Bunjiro Fukuda , Masataka Yamada , Yoshiaki Iida , Fumihiko Takeuchi , Michiro Komatsubara
发明人： Yasuyuki Hayakawa , Ujihiro Nishiike , Bunjiro Fukuda , Masataka Yamada , Yoshiaki Iida , Fumihiko Takeuchi , Michiro Komatsubara
IPC分类号： C21D8/12 , C22C38/00 , C22C38/60 , H01F1/16 , H01F1/04
CPC分类号： C21D8/1233 , C21D8/1227 , C21D8/1277
摘要： A method of producing a grain oriented silicon steel sheet is adapted to lower the iron loss. A silicon steel slab, containing about 2.0 to 4.0 weight % of Si and an inhibitor-forming amount of S, or Se, or both, is hot rolled. After the hot rolled steel sheet is annealed when necessary, the steel sheet is cold rolled into a cold rolled steel sheet having a final thickness by performing cold rolling either one time or a plurality of times with intermediate annealing therebetween, the cold rolled steel sheet then being subjected to decarburization, coating of the surface of the steel sheet with an annealing separation agent mainly comprising MgO, secondary recrystallization annealing, and purification annealing. In the cold rolling step, an oxide layer exists on the surface of the steel sheet. Specifically, in the cold rolling step, rolling oil is supplied only at the entrance of the rolling mill used, and an oxide layer having a thickness of about 0.05 to 5 .mu.m is generated. Or, an outer oxide layer of an oxide layer structure generated on the surface of the steel sheet after hot rolling or intermediate annealing, is removed, and an inner oxide layer of a thickness of about 0.05 to 5 .mu.m is maintained on the surface, the resultant steel sheet then being subjected to cold rolling.
摘要翻译：一种生产晶粒取向硅钢片的方法适用于降低铁损。将含有约2.0〜4.0重量％的Si和抑制剂形成量的S或Se或两者的硅钢板热轧。在必要时对热轧钢板进行退火后，通过进行一次或多次冷轧，中间退火，将钢板冷轧成具有最终厚度的冷轧钢板，然后将冷轧钢板用主要包含MgO的退火分离剂，二次再结晶退火和纯化退火对钢板表面进行脱碳，涂覆。在冷轧工序中，在钢板表面存在氧化层。具体而言，在冷轧工序中，仅在所使用的轧机的入口处供给轧制油，生成厚度为0.05〜5μm左右的氧化物层。或者，除去在热轧或中间退火之后在钢板表面产生的氧化物层结构的外部氧化物层，并且在表面上保持约0.05〜5μm的厚度的内部氧化物层，然后将所得的钢板进行冷轧。

4. 发明授权

US08692103B2 Thermoelectric semiconductor material, thermoelectric semiconductor element using thermoelectric semiconductor material, thermoelectric module using thermoelectric semiconductor element and manufacturing method for same 有权
标题翻译：热电半导体材料，使用热电半导体材料的热电半导体元件，使用热电半导体元件的热电模块及其制造方法
公开(公告)号：US08692103B2
公开(公告)日：2014-04-08
申请号：US13083666
申请日：2011-04-11
申请人： Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
发明人： Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
IPC分类号： H01L35/34
CPC分类号： H01L35/34 , B22D11/0611 , H01L35/16
摘要： A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 μm. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10. As a result, a thermoelectric semiconductor 17 having crystal orientation in which extending direction of C face and the direction of c-axis of the hexagonal structure are approximately aligned. As a result, the crystalline orientation is improved, and the thermoelectric Figure-of-Merit is increased.
摘要翻译：制备金属混合物，其中向（Bi-Sb）2Te3基组合物中加入过量的Te。在熔融金属混合物之后，熔融金属在圆周速度不高于5m / sec的冷却辊的表面上固化，从而具有不小于30μm的厚度。因此，制造了板状的原料热电半导体材料10，其中Te富相显微分散在复合化合物半导体相中，并且大部分晶粒的C面的延伸方向均匀取向。原料热电半导体材料10在板厚方向上层叠。并且层叠体被固化并形成以形成紧凑体12.此后，压块12塑性变形，使得剪切力沿大致平行于原料热电偶的主层叠方向的单轴方向施加半导体材料10.结果，具有晶体取向的热电半导体17，其中C面的延伸方向和六边形结构的c轴的方向近似对准。结果，晶体取向得到改善，并且热电式的品质提高。

5. 发明申请

US20060243314A1 Thermoelectric semiconductor material, thermoelectric semiconductor element therefrom, thermoelectric module including thermoelectric semiconductor element and process for producing these 审中-公开
标题翻译：热电半导体材料，其热电半导体元件，包括热电半导体元件的热电模块及其制造方法
公开(公告)号：US20060243314A1
公开(公告)日：2006-11-02
申请号：US10555855
申请日：2004-05-07
申请人： Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
发明人： Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
IPC分类号： H01L35/00
CPC分类号： H01L35/34 , B22D11/0611 , H01L35/16
摘要： A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 μm. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10. As a result, a thermoelectric semiconductor 17 having crystal orientation in which extending direction of C face and the don of c-axis of the hexagonal structure are approximately aligned. As a result, the crystalline orientation is improved, and the thermoelectric Figure-of-Merit is increased.
摘要翻译：制备金属混合物，其中将过量的Te加入到基于（Bi-Sb）2 N 3基团的组合物中。在熔融金属混合物之后，熔融金属在圆周速度不高于5m / sec的冷却辊的表面上固化，从而具有不小于30μm的厚度。因此，制造了板状的原料热电半导体材料10，其中Te富相显微分散在复合化合物半导体相中，并且大部分晶粒的C面的延伸方向均匀取向。原料热电半导体材料10在板厚方向上层叠。并且层状体被固化并形成以形成紧凑的12。之后，紧凑体12以这样的方式发生塑性变形，使得剪切力沿大致平行于原料热电半导体材料10的主层叠方向的单轴方向施加。结果，具有晶面取向的热电半导体17，其中C面的延伸方向和六边形结构的c轴的大致对准。结果，晶体取向得到改善，并且热电式的品质提高。

6. 发明授权

US5697425A Method of producing thin cast sheet through continuous casting 失效
标题翻译：通过连续铸造生产薄铸片的方法
公开(公告)号：US5697425A
公开(公告)日：1997-12-16
申请号：US433480
申请日：1995-05-11
申请人： Akihiko Nanba , Chisato Yoshida , Takaharu Moriya , Naotsugu Yoshida , Yasuyuki Murata , Kazutoshi Hironaka , Mineo Muraki , Ujihiro Nishiike
发明人： Akihiko Nanba , Chisato Yoshida , Takaharu Moriya , Naotsugu Yoshida , Yasuyuki Murata , Kazutoshi Hironaka , Mineo Muraki , Ujihiro Nishiike
IPC分类号： B22D11/00 , B22D11/06 , B22D27/02 , B22D27/08 , B22D35/06
CPC分类号： B22D11/00 , B22D11/0622 , Y10S164/90
摘要： Thin cast sheets having an excellent quality are obtained by continuous casting in which a semi-solidified metal slurry is fed from a continuous production device of the semi-solidified metal slurry through a discharge nozzle provided with means for heating the nozzle itself into a twin roll type continuous strip caster, at where the slurry is rapidly quenched and solidified to fine a structure and dispersion of precipitate.
摘要翻译： PCT No.PCT / JP94 / 01315 Sec。 371日期1995年5月11日 102（e）日期1995年5月11日PCT 1994年8月9日PCT PCT。公开号WO95 / 07780 日期1995年3月23日通过连续铸造获得具有优良质量的铸造片，其中通过设置有用于加热喷嘴的装置的排出喷嘴从半固化金属浆料的连续生产装置进料半固化金属浆料本身进入双辊式连续带式连铸机，其中浆料被快速淬火和固化以精细沉淀物的结构和分散。

7. 发明授权

US5173129A Grain-oriented silicon steel sheet having a low iron loss free from deterioration due to stress-relief annealing and a method of producing the same 失效
标题翻译：具有低的铁损的晶粒取向硅钢片不受应力消除退火的退化及其制造方法
公开(公告)号：US5173129A
公开(公告)日：1992-12-22
申请号：US448059
申请日：1989-12-08
申请人： Ujihiro Nishiike , Michiro Komatsubara , Yoshiaki Iida , Isao Matoba
发明人： Ujihiro Nishiike , Michiro Komatsubara , Yoshiaki Iida , Isao Matoba
IPC分类号： C21D8/12 , H01F1/147 , H01F1/16
CPC分类号： H01F1/16 , C21D8/1294 , H01F1/14783
摘要： A grain-oriented silicon steel sheet having a low iron loss free from deterioration due to the stress-relief annealing, can be obtained by forming on its surface a forsterite film locally having regions, which have a thickness different from that of the remaining regions in the film, or locally having filmless regions which do not coat the steel sheet surface.
摘要翻译：通过在其表面上形成局部具有与其余区域的厚度不同的区域的镁橄榄石膜，可以获得具有低于由于应力消除退火而导致的劣化的低铁损的晶粒取向硅钢板膜，或局部具有不涂覆钢板表面的无膜区域。

8. 发明授权

US4952253A Grain-oriented silicon steel sheet having a low iron loss free from deterioration due to stress-relief annealing and a method of producing the same 失效
标题翻译：具有低的铁损的晶粒取向硅钢片不受应力消除退火的退化及其制造方法
公开(公告)号：US4952253A
公开(公告)日：1990-08-28
申请号：US120203
申请日：1987-11-05
申请人： Ujihiro Nishiike , Michiro Komatsubara , Yoshiaki Iida , Isao Matoba
发明人： Ujihiro Nishiike , Michiro Komatsubara , Yoshiaki Iida , Isao Matoba
IPC分类号： C21D8/12 , H01F1/147 , H01F1/16
CPC分类号： C21D8/1294 , H01F1/14783 , H01F1/16
摘要： A grain-oriented silicon steel sheet having a low iron loss, due to the subdividing effect of magnetic domain wall spacing, free from deterioration due to the stress-relief annealing, can be obtained by forming on its surface a forsterite film locally having regions, which have a thickness different from that of the remaining regions in the film, or locally having filmless regions which do not coat the steel sheet surface.

9. 发明申请

US20110180121A1 THERMOELECTRIC SEMICONDUCTOR MATERIAL, THERMOELECTRIC SEMICONDUCTOR ELEMENT USING THERMOELECTRIC SEMICONDUCTOR MATERIAL, THERMOELECTRIC MODULE USING THERMOELECTRIC SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD FOR SAME 有权
标题翻译：热电半导体材料，使用热电半导体材料的热电半导体元件，使用热电半导体元件的热电模块及其制造方法
公开(公告)号：US20110180121A1
公开(公告)日：2011-07-28
申请号：US13083666
申请日：2011-04-11
申请人： Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
发明人： Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
IPC分类号： H01L35/16
CPC分类号： H01L35/34 , B22D11/0611 , H01L35/16
摘要： A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 μm. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10. As a result, a thermoelectric semiconductor 17 having crystal orientation in which extending direction of C face and the direction of c-axis of the hexagonal structure are approximately aligned. As a result, the crystalline orientation is improved, and the thermoelectric Figure-of-Merit is increased.
摘要翻译：制备金属混合物，其中向（Bi-Sb）2Te3基组合物中加入过量的Te。在熔融金属混合物之后，熔融金属在圆周速度不高于5m / sec的冷却辊的表面上固化，从而具有不小于30μm的厚度。因此，制造了板状的原料热电半导体材料10，其中Te富相显微分散在复合化合物半导体相中，并且大部分晶粒的C面的延伸方向均匀取向。原料热电半导体材料10在板厚方向上层叠。并且层叠体被固化并形成以形成紧凑体12.之后，压块12塑性变形，使得剪切力沿大致平行于原料热电偶的主层叠方向的单轴方向施加半导体材料10.结果，具有晶体取向的热电半导体17，其中C面的延伸方向和六边形结构的c轴的方向近似对准。结果，晶体取向得到改善，并且热电式的品质提高。

10. 发明授权

US06761780B2 Method of manufacturing a high Mn non-magnetic steel sheet for cryogenic temperature use 失效
标题翻译：一种用于低温使用的高Mn非磁性钢板的制造方法
公开(公告)号：US06761780B2
公开(公告)日：2004-07-13
申请号：US10013532
申请日：2001-12-13
申请人： Nobuyuki Morito , Kiyohiko Nohara , Katsuhiro Kobori , Ujihiro Nishiike , Takako Yamashita
发明人： Nobuyuki Morito , Kiyohiko Nohara , Katsuhiro Kobori , Ujihiro Nishiike , Takako Yamashita
IPC分类号： C21D812
CPC分类号： C21D8/0205 , C21D8/0226 , C21D8/0236 , C21D8/0263 , C21D8/0273 , C22C38/001 , C22C38/38 , C22C38/58
摘要： A method of manufacturing a high Mn non-magnetic steel sheet having low permeability at a cryogenic temperature suitable for use in large scale particle accelerators, the method comprises rolling a steel material containing, on the wt % basis, from 0.05 to 0.18% of C, from 26.0 to 30.0% of Mn, from 5.0 to 10.0% of Cr, 0.05 to 0.15% of N and, optionally, from 0.50 to 5.0% of Ni, in which a rolling start temperature is from 1050 to 1200° C. and a rolling end temperature is from 700 to 1000° C. Further, a cold rolled sheet is annealed at an annealing temperature for cold rolled sheet of from 1050 to 1200° C. and cooled after annealing, the annealed sheet being preferably applied with temper rolling under control for the strength by varying a draft ratio.
摘要翻译：一种在适合用于大规模粒子加速器的低温下制造具有低磁导率的高Mn非磁性钢板的方法，该方法包括以重量％计含有0.05至0.18％的C ，Mn为26.0〜30.0％，Cr为5.0〜10.0％，N为0.05〜0.15％，Ni为0.50〜5.0％，轧制开始温度为1050〜1200℃，轧制终点温度为700〜1000℃。此外，冷轧板在退火温度为1050〜1200℃的冷轧板的退火温度下进行退火，退火后进行冷却，优选将退火板进行回火轧制通过改变牵引比来控制强度。

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