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1. 发明授权

US06660665B2 Platen for electrostatic wafer clamping apparatus 有权
标题翻译：压板用于静电晶片夹紧装置
公开(公告)号：US06660665B2
公开(公告)日：2003-12-09
申请号：US10137790
申请日：2002-05-01
申请人： Hiroaki Yanagida , Hideaki Matsubara , Yoshiki Okuhara , Shoji Aoki , Naoki Kawashima , Bruce T. Williams , Toshio Uehara
发明人： Hiroaki Yanagida , Hideaki Matsubara , Yoshiki Okuhara , Shoji Aoki , Naoki Kawashima , Bruce T. Williams , Toshio Uehara
IPC分类号： H02N1300
CPC分类号： H02N13/00 , H01L21/6833 , Y10T279/23 , Y10T428/24917
摘要： A platen for electrostatic wafer clamping apparatus comprising a platen body of dielectric material and grains of electrically conductive material diffused in the dielectric material so that the platen has a relatively large electrostatic capacitance due to the diffusion of the conductive grains with the result that the platen provides an increased clamping force regardless of humidity. In accordance with another aspect of the invention, the thickness of the platen body can be decreased by an amount sufficient to maintain a constant clamping force with reduced applied voltage, to eliminate any residual voltage on the platen and to increase the speed of wafer release. The grains of electrically conductive material are present in an amount of from about 2.5 percent to about 15.0 percent of the volume of the platen body, and the grains of electrically conductive material are selected from the group consisting of carbonated transition metals, nitrified transition metals and carbonated grains. The dielectric material preferably is Al2O3, and the grains of electrically conductive material preferably are TiC and preferably in an amount of about 5% of the volume of the platen.
摘要翻译：一种用于静电晶片夹紧装置的压板，包括电介质材料的压板体和导电材料颗粒在电介质材料中扩散，使得压板由于导电颗粒的扩散而具有相对较大的静电电容，结果是压板提供增加夹紧力，而不管湿度如何。根据本发明的另一方面，压板体的厚度可以减小足够的量以保持具有降低的施加电压的恒定夹紧力，以消除压板上的任何残余电压并增加晶片释放的速度。导电材料的颗粒以压板体的体积的约2.5％至约15.0％的量存在，并且导电材料颗粒选自碳酸过渡金属，硝化过渡金属和碳酸化谷物。电介质材料优选为Al 2 O 3，导电材料的颗粒优选为TiC，优选为压板体积的约5％。

2. 发明申请

US20070023277A1 PLATING APPARATUS, PLATING CUP AND CATHODE RING 审中-公开
公开(公告)号：US20070023277A1
公开(公告)日：2007-02-01
申请号：US11536211
申请日：2006-09-28
申请人： Yasuhiro Mizohata , Hideaki Matsubara , Masahiro Miyagi , Ryuichi Hayama
发明人： Yasuhiro Mizohata , Hideaki Matsubara , Masahiro Miyagi , Ryuichi Hayama
IPC分类号： C25D17/00
CPC分类号： H01L21/2885 , C25D5/003 , C25D5/04 , C25D5/08 , C25D7/123 , C25D17/001 , C25D17/005 , C25D17/06 , C25D17/12 , C25D21/08
摘要： A plating apparatus (10) provided with: a plating vessel (61a to 61d) having a cylindrical side wall (361) for containing a plating liquid; a substrate holding mechanism (74a to 74d) for generally horizontally holding a generally round substrate (W) to be treated; a cathode ring (80) provided in the substrate holding mechanism and having substantially the same inner diameter as the plating vessel for sealing a peripheral edge portion of a lower surface of the substrate, the cathode ring having a cathode (83) to be brought into contact with the substrate held by the substrate holding mechanism; and a rotative driving mechanism (45) for rotating the substrate held by the substrate holding mechanism together with the cathode ring; wherein the plating vessel has an upper edge portion complementary in configuration to a portion of the cathode ring opposed to the plating vessel so that the lower surface of the substrate held by the substrate holding mechanism can approach the plating vessel so as to be substantially flush with the upper edge of the plating vessel without interference between the upper edge portion of the plating vessel and the cathode ring.

3. 发明授权

US5504437A Apparatus and method for electrical measurement of semiconductor wafers 失效
标题翻译：半导体晶片的电气测量装置和方法
公开(公告)号：US5504437A
公开(公告)日：1996-04-02
申请号：US460053
申请日：1995-06-02
申请人： Sadao Hirae , Hiroshi Okada , Hideaki Matsubara
发明人： Sadao Hirae , Hiroshi Okada , Hideaki Matsubara
IPC分类号： G01R31/28 , H01L21/66 , H01L21/683 , G01R1/00 , G01R1/04
CPC分类号： H01L22/20 , G01R31/2831
摘要： A stage 130 includes a metal base and an anti-metal contamination film formed on the metal base a semi-conductor wafer 120. The anti-metal contamination film is constructed of a material selected from the group consisting of a semi-conductor film, a semi-conductor oxide film, a semi-conductor nitride film, a semi-conductor carbide film, and a polytetrafluoroethylene film. The rear face of the semi-conductor wafer 120 mounted on the stage 130 is in direct contact with the anti-metal contamination film but not with the metal surface. The anti-metal contamination film, which does not contain simple substances of metals, effectively protects the rear face of the semi-conductor wafer 120 from contamination metal.
摘要翻译：阶段130包括金属基底和在金属基底上形成半导体晶片120的抗金属污染膜。反金属污染膜由选自半导体膜，半导体氧化物膜，半导体氮化物膜，半导体碳化物膜和聚四氟乙烯膜。安装在台架130上的半导体晶片120的后表面与抗金属污染膜直接接触，但不与金属表面接触。不含有简单金属物质的金属防污膜有效地保护半导体晶片120的背面免受金属污染。

4. 发明申请

US20070221254A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20070221254A1
公开(公告)日：2007-09-27
申请号：US11687934
申请日：2007-03-19
申请人： Akira Izumi , Hideaki Matsubara , Naozumi Fujiwara , Katsuhiko Miya
发明人： Akira Izumi , Hideaki Matsubara , Naozumi Fujiwara , Katsuhiko Miya
IPC分类号： B08B3/00
CPC分类号： H01L21/02041 , H01L21/67051 , H01L21/67057 , H01L21/67109 , H01L21/67309 , H01L21/68742
摘要： Substrates having liquid films with preprocessing liquid on surfaces thereof in a preprocessing unit are transported to a freezing unit arranged separately from the preprocessing unit by a substrate transporting robot. In the freezing unit, the substrates are accommodated in a processing space in a processing chamber and the liquid films are frozen by decreasing the temperature of the processing space to a temperature below the freezing point of the preprocessing unit. Subsequently, the substrates subjected to the freezing process are transported from the freezing unit to a post-processing unit arranged separately from the freezing unit. In the post-processing unit, cleaning liquid is supplied to frozen films, whereby contaminants having adhesive forces to the substrate reduced by the freezing process can be easily removed together with the frozen film.
摘要翻译：在预处理单元中，在其表面具有预处理液体的液膜的基板通过基板传送机器人传送到与预处理单元分开布置的冷冻单元。在冷冻单元中，基板被容纳在处理室中的处理空间中，并且通过将处理空间的温度降低到低于预处理单元的冰点的温度来冻结液膜。随后，经过冷冻处理的基板从冷冻单元传送到与冷冻单元分开设置的后处理单元。在后处理单元中，向冷冻薄膜供给清洗液，能够容易地将与冷冻膜一起减少的粘附力的污染物与冷冻薄膜一起除去。

5. 发明申请

US20060266382A1 Substrate processing method of and substrate processing apparatus for freezing and cleaning substrate 有权
标题翻译：用于冷冻和清洁基板的基板处理方法和基板处理装置
公开(公告)号：US20060266382A1
公开(公告)日：2006-11-30
申请号：US11434322
申请日：2006-05-11
申请人： Hideaki Matsubara
发明人： Hideaki Matsubara
IPC分类号： B08B7/00 , B08B3/00
CPC分类号： B08B3/10 , B08B7/0014 , B08B7/0092 , C03C23/0075 , H01L21/02052 , H01L21/67057 , Y10S134/902
摘要： A substrate immersed in pure water held inside a processing bath disposed to a cleaning unit 1 and accordingly washed, as it bears an aqueous film on its surface, is transported by a substrate transportation mechanism 3 to a spin-processing unit 2. The substrate rotates in the spin-processing unit 2, thereby adjusting the thickness of the aqueous film on the substrate surface. As the aqueous film is then frozen, the volume of the aqueous film expands, adhesion between the substrates and particles adhering to the substrate surface becomes weak, or further the particles are separated from the substrate surface. The substrate transportation mechanism 3 transports thus frozen substrate to the cleaning unit 1 from the spin-processing unit 2, and the substrate is immersed in a processing liquid held inside the processing bath. The overflowing processing liquid thaws and removes the aqueous film, and particles on the substrate surface are discharged outside the substrate.
摘要翻译：浸渍在保持在清洗单元1内的处理槽内的纯水中的基板，由于在其表面承载水性膜而被洗涤的基板通过基板输送机构3输送到旋转处理单元2。基板在旋转处理单元2中旋转，由此调整基板表面上的水性膜的厚度。随着水性膜冷冻，水性膜的体积膨胀，基材和附着于基材表面的颗粒之间的粘合力变弱，或者进一步使颗粒与基材表面分离。基板输送机构3将这样冷冻的基板从旋转处理单元2输送到清洁单元1，并且将基板浸入保持在处理槽内部的处理液中。溢出的处理液解冻并除去水性膜，并且将基板表面上的颗粒排出到基板外部。

6. 发明授权

US07785671B2 Thermal barrier coating system and method of manufacturing the same 有权
标题翻译：热障涂层系统及其制造方法
公开(公告)号：US07785671B2
公开(公告)日：2010-08-31
申请号：US11947413
申请日：2007-11-29
申请人： Mineaki Matsumoto , Norio Yamaguchi , Kazushige Kimura , Hideaki Matsubara , Yasuo Matsunaga , Kouichi Matsumoto , Yasuhiro Shigegaki , Takahito Araki
发明人： Mineaki Matsumoto , Norio Yamaguchi , Kazushige Kimura , Hideaki Matsubara , Yasuo Matsunaga , Kouichi Matsumoto , Yasuhiro Shigegaki , Takahito Araki
IPC分类号： C08J7/06 , C23C16/22
CPC分类号： C04B35/486 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C23C14/08 , C23C28/321 , C23C28/3215 , C23C28/3455 , Y02T50/67 , Y10T428/12611
摘要： A thermal barrier coating system comprising a metal substrate, a metal bonding layer and a ceramics thermal barrier layer wherein the ceramics thermal barrier layer has a columnar structure of a stabilized zirconia containing a stabilizer or a stabilized ZrO2—HfO2 solid solution containing a stabilizer, and comprises 0.1 to 10 mol % of lanthanum oxide.
摘要翻译：一种隔热涂层系统，包括金属基底，金属结合层和陶瓷热障层，其中所述陶瓷热障层具有包含稳定剂的稳定化氧化锆的柱状结构或含有稳定剂的稳定化的ZrO 2-HfO 2固溶体，含有0.1〜10摩尔％的氧化镧。

7. 发明申请

US20070235341A1 PLATING APPARATUS, CARTRIDGE AND COPPER DISSOLUTION TANK FOR USE IN THE PLATING APPARATUS, AND PLATING METHOD 审中-公开
标题翻译：涂装设备，镀膜及铜罐解决方案用于镀锌装置及镀锌方法
公开(公告)号：US20070235341A1
公开(公告)日：2007-10-11
申请号：US11762962
申请日：2007-06-14
申请人： Yasuhiro Mizohata , Hideaki Matsubara , Yoshihiro Koyama
发明人： Yasuhiro Mizohata , Hideaki Matsubara , Yoshihiro Koyama
IPC分类号： C25D3/38 , C25D17/00
CPC分类号： H01L21/68764 , C23C18/1671 , C23C18/40 , C25D7/123 , C25D17/001 , C25D21/18 , H01L21/2885 , H01L21/6708 , H01L21/67766 , H01L21/68792
摘要： A plating apparatus provided with: three copper dissolution tanks connected to a plating liquid circulation path for supplying copper ions to a plating liquid; a buffer container for supplying a replacement liquid into some of the copper dissolution tanks not in use; and an undiluted replacement liquid supplying section for supplying an undiluted replacement liquid as a source of the replacement liquid into the buffer container. Copper mesh members each prepared by weaving a copper wire, straight copper pipes or copper plates are accommodated as a copper source in each of the copper dissolution tanks. The copper dissolution tanks each include a detachable cartridge, in which the copper mesh members or the like are disposed.
摘要翻译：一种电镀设备，具有：三个铜溶解槽，其与电镀液循环路径连接，用于向镀液供应铜离子; 缓冲容器，用于将替换液体供应到不使用的一些铜溶解罐中; 以及未稀释的置换液体供应部分，用于将未稀释的替换液体作为替代液体的源提供到缓冲容器中。通过编织铜线，直铜管或铜板制备的铜网构件作为铜源容纳在每个铜溶解槽中。铜溶解槽各自包括可拆卸的盒，其中布置有铜网构件等。

8. 发明授权

US07279079B2 Plating apparatus, cartridge and copper dissolution tank for use in the plating apparatus, and plating method 失效
标题翻译：电镀装置中使用的电镀装置，滤芯和铜溶解槽以及电镀方法
公开(公告)号：US07279079B2
公开(公告)日：2007-10-09
申请号：US10620728
申请日：2003-07-16
申请人： Yasuhiro Mizohata , Hideaki Matsubara , Yoshihiro Koyama
发明人： Yasuhiro Mizohata , Hideaki Matsubara , Yoshihiro Koyama
IPC分类号： C25D17/00 , C25D21/18
CPC分类号： H01L21/68764 , C23C18/1671 , C23C18/40 , C25D7/123 , C25D17/001 , C25D21/18 , H01L21/2885 , H01L21/6708 , H01L21/67766 , H01L21/68792
摘要： A plating apparatus provided with: three copper dissolution tanks connected to a plating liquid circulation path for supplying copper ions to a plating liquid; a buffer container for supplying a replacement liquid into some of the copper dissolution tanks not in use; and an undiluted replacement liquid supplying section for supplying an undiluted replacement liquid as a source of the replacement liquid into the buffer container. Copper mesh members each prepared by weaving a copper wire, straight copper pipes or copper plates are accommodated as a copper source in each of the copper dissolution tanks. The copper dissolution tanks each include a detachable cartridge, in which the copper mesh members or the like are disposed.
摘要翻译：一种电镀设备，具有：三个铜溶解槽，其与电镀液循环路径连接，用于向镀液供应铜离子; 缓冲容器，用于将替换液体供应到不使用的一些铜溶解罐中; 以及未稀释的置换液体供应部分，用于将未稀释的替换液体作为替代液体的源提供到缓冲容器中。通过编织铜线，直铜管或铜板制备的铜网构件作为铜源容纳在每个铜溶解槽中。铜溶解槽各自包括可拆卸的盒，其中布置有铜网构件等。

9. 发明授权

US07364806B2 Thermal barrier coating system method of manufacturing the same 有权
标题翻译：热障涂层系统制造方法
公开(公告)号：US07364806B2
公开(公告)日：2008-04-29
申请号：US10779309
申请日：2004-02-13
申请人： Mineaki Matsumoto , Norio Yamaguchi , Kazushige Kimura , Hideaki Matsubara , Yasuo Matsunaga , Kouichi Matsumoto , Yasuhiro Shigegaki , Takahito Araki
发明人： Mineaki Matsumoto , Norio Yamaguchi , Kazushige Kimura , Hideaki Matsubara , Yasuo Matsunaga , Kouichi Matsumoto , Yasuhiro Shigegaki , Takahito Araki
IPC分类号： B32B9/00
CPC分类号： C04B35/486 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C23C14/08 , C23C28/321 , C23C28/3215 , C23C28/3455 , Y02T50/67 , Y10T428/12611
摘要： A thermal barrier coating system comprising a metal substrate, a metal bonding layer and a ceramics thermal barrier layer wherein the ceramics thermal barrier layer has a columnar structure of a stabilized zirconia containing a stabilizer or a stabilized ZrO2—HfO2 solid solution containing a stabilizer, and comprises 0.1 to 10 mol % of lanthanum oxide.
摘要翻译：一种隔热涂层系统，包括金属基底，金属结合层和陶瓷热障层，其中所述陶瓷热障层具有包含稳定剂或稳定的ZrO 2 - 的稳定的氧化锆的柱状结构，含有稳定剂的HfO 2 H 2固溶体，并含有0.1〜10mol％的氧化镧。

10. 发明申请

US20080075879A1 THERMAL BARRIER COATING SYSTEM AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：热障涂层系统及其制造方法
公开(公告)号：US20080075879A1
公开(公告)日：2008-03-27
申请号：US11947413
申请日：2007-11-29
申请人： Mineaki Matsumoto , Norio Yamaguchi , Kazushige Kimura , Hideaki Matsubara , Yasuo Matsunaga , Kouichi Matsumoto , Yasuhiro Shigegaki , Takahito Araki
发明人： Mineaki Matsumoto , Norio Yamaguchi , Kazushige Kimura , Hideaki Matsubara , Yasuo Matsunaga , Kouichi Matsumoto , Yasuhiro Shigegaki , Takahito Araki
IPC分类号： C08J7/06
CPC分类号： C04B35/486 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C23C14/08 , C23C28/321 , C23C28/3215 , C23C28/3455 , Y02T50/67 , Y10T428/12611
摘要： A thermal barrier coating system comprising a metal substrate, a metal bonding layer and a ceramics thermal barrier layer wherein the ceramics thermal barrier layer has a columnar structure of a stabilized zirconia containing a stabilizer or a stabilized ZrO2—HfO2 solid solution containing a stabilizer, and comprises 0.1 to 10 mol % of lanthanum oxide.
摘要翻译：一种隔热涂层系统，包括金属基底，金属结合层和陶瓷热障层，其中所述陶瓷热障层具有包含稳定剂或稳定的ZrO 2 - 的稳定的氧化锆的柱状结构，含有稳定剂的HfO 2 H 2固溶体，并含有0.1〜10mol％的氧化镧。

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