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1. 发明授权

US06869736B2 Halftone phase shift photomask and blank for halftone phase shift photomask 失效
标题翻译：半色调相移光掩模和半色调相移光掩模的空白
公开(公告)号：US06869736B2
公开(公告)日：2005-03-22
申请号：US10363604
申请日：2001-09-03
申请人： Hiro-o Nakagawa , Toshiaki Motonaga , Yoshinori Kinase , Satoshi Yusa , Shigeki Sumida , Toshifumi Yokoyama , Chiaki Hatsuta , Junji Fujikawa , Masashi Ohtsuki
发明人： Hiro-o Nakagawa , Toshiaki Motonaga , Yoshinori Kinase , Satoshi Yusa , Shigeki Sumida , Toshifumi Yokoyama , Chiaki Hatsuta , Junji Fujikawa , Masashi Ohtsuki
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G03C5/00
CPC分类号： G03F1/32 , G03F1/58
摘要： Disclosed is a blank for a halftone phase shift photomask comprising a transparent substrate and a halftone phase shift layer formed thereon, the halftone phase shift layer being provided with a layer containing molybdenum silicide as its major component and either one or both of oxygen and nitrogen and being formed of a multilayer film with two or more layers, wherein the multilayer film contains a layer whose major component is either one of chromium and tantalum or a chromium tantalum alloy and the layer whose major component is either one of chromium and tantalum or a chromium tantalum alloy is laminated on the side closer to the transparent substrate than the layer containing molybdenum silicide as its major component and either one or both of oxygen and nitrogen.
摘要翻译：公开了一种用于半色调相移光掩模的空白，其包括透明基板和形成在其上的半色调相移层，所述半色调相移层设置有含有硅化钼作为其主要成分的层和氧和氮中的一个或两个，由具有两层或更多层的多层膜形成，其中多层膜含有主要成分为铬和钽之一或铬钽合金的层，其主要成分为铬和钽之一或铬钽合金层叠在比含有硅化钼作为其主要成分的层和氧和氮中的任一个或两者更靠近透明基板的一侧。

2. 发明授权

US06599667B2 Halftone phase shift photomask and blank for halftone phase shift photomask 失效
公开(公告)号：US06599667B2
公开(公告)日：2003-07-29
申请号：US09843309
申请日：2001-04-26
申请人： Satoshi Yusa , Toshifumi Yokoyama , Shigeki Sumida , Toshiaki Motonaga , Yoshinori Kinase , Hiro-o Nakagawa , Chiaki Hatsuta , Junji Fujikawa , Masashi Ohtsuki
发明人： Satoshi Yusa , Toshifumi Yokoyama , Shigeki Sumida , Toshiaki Motonaga , Yoshinori Kinase , Hiro-o Nakagawa , Chiaki Hatsuta , Junji Fujikawa , Masashi Ohtsuki
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： A blank for halftone phase shift photomask is disclosed. The blank has a transparent substrate, a halftone phase shift layer and a light shielding film, the halftone phase shift layer and the light shielding film being layered in this order on the transparent substrate, and the l light shielding film is a single layered or multiple layered film which has a layer of tantalum.

3. 发明授权

US06458496B2 Blank for halftone phase shift photomask and halftone phase shift photomask 有权
标题翻译：用于半色调相移光掩模和半色调相移光掩模的空白
公开(公告)号：US06458496B2
公开(公告)日：2002-10-01
申请号：US09736805
申请日：2000-12-14
申请人： Toshiaki Motonaga , Toshifumi Yokoyama , Takafumi Okamura , Yoshinori Kinase , Hiroshi Mohri , Junji Fujikawa , Hiro-o Nakagawa , Shigeki Sumida , Satoshi Yusa , Masashi Ohtsuki
发明人： Toshiaki Motonaga , Toshifumi Yokoyama , Takafumi Okamura , Yoshinori Kinase , Hiroshi Mohri , Junji Fujikawa , Hiro-o Nakagawa , Shigeki Sumida , Satoshi Yusa , Masashi Ohtsuki
IPC分类号： G03S900
CPC分类号： G03F1/32 , B32B17/06
摘要： A blank for a halftone phase shift photomask in the present invention comprises a transparent substrate and a halftone phase shift film provided thereon, and said halftone phase shift film has a multilayer construction in which at least a first layer capable of being etched with a chlorinated gas and a second layer capable of being etched with a fluorinated gas are disposed in this order from the side near said transparent substrate. A film made of tantalum silicides is suitable to use as the second layer of the halftone phase shift film. When such a blank is first etched with a fluorinated gas and then etched with chlorinated gas, because an etching selective ratio to a transparent substrate made of synthetic quartz and the like can be taken sufficiently while maintaining the applicability to the exposure light with a short wavelength that is characteristic of silicide materials in addition to good chemical stability and good processing properties that are characteristic of tantalum materials, patterning in high precision will be made possible. As a result, it is possible to obtain an ideal halftone phase shift photomask excellent in stability after mask processing and in the applicability to the short wavelength.
摘要翻译：本发明中的半色调相移光掩模的空白包括透明基板和设置在其上的半色调相移膜，所述半色调相移膜具有多层结构，其中至少可以用氯化气体蚀刻的第一层并且能够用氟化气体蚀刻的第二层从靠近所述透明基板的一侧依次设置。由硅化钽制成的薄膜适用于半色调相移薄膜的第二层。当首先用氟化气体蚀刻这样的坯料，然后用氯化气体蚀刻时，由于可以充分利用由合成石英等制成的透明基板的蚀刻选择比，同时保持对短波长的曝光光的适用性这是硅化物材料的特征，除了钽材料的特征的良好的化学稳定性和良好的加工性能之外，将能够高精度地进行图案化。结果，可以获得在掩模处理之后和在短波长的适用性方面优异的理想半色调相移光掩模。

4. 发明授权

US06740455B2 Photomask 有权
标题翻译：光掩模
公开(公告)号：US06740455B2
公开(公告)日：2004-05-25
申请号：US10023841
申请日：2001-12-21
申请人： Kenji Noguchi , Toshiaki Motonaga , Hiro-o Nakagawa , Yasutaka Morikawa , Toshifumi Yokoyama , Takashi Tominaga , Yoshinori Kinase , Junji Fujikawa , Yoichi Takahashi
发明人： Kenji Noguchi , Toshiaki Motonaga , Hiro-o Nakagawa , Yasutaka Morikawa , Toshifumi Yokoyama , Takashi Tominaga , Yoshinori Kinase , Junji Fujikawa , Yoichi Takahashi
IPC分类号： G03F900
CPC分类号： G03F1/50
摘要： A photomask is produced which enables the simplification of the steps of lithography. A photomask is provided with shielding patterns made of shielding metallic thin film on a transparent substrate, wherein the photomask further comprises translucent patterns mainly including tantalum of materials selected from tantalum silicide, tantalum oxide, tantalum nitride or mixture thereof.
摘要翻译：制造了能够简化光刻步骤的光掩模。光掩模设置有在透明基板上由屏蔽金属薄膜制成的屏蔽图案，其中光掩模还包括主要包括选自硅化钽，氧化钽，氮化钽或其混合物的材料的钽的半透明图案。

5. 发明授权

US06764792B1 Halftone phase shift photomask and blanks for halftone phase shift photomask for producing it 失效
标题翻译：半色调相移光掩模和用于生产它的半色调相移光掩模的空白
公开(公告)号：US06764792B1
公开(公告)日：2004-07-20
申请号：US09830598
申请日：2001-04-27
申请人： Junji Fujikawa , Yoshinori Kinase , Takafumi Okamura , Hiroshi Mohri , Toshifumi Yokoyama , Haruo Kokubo
发明人： Junji Fujikawa , Yoshinori Kinase , Takafumi Okamura , Hiroshi Mohri , Toshifumi Yokoyama , Haruo Kokubo
IPC分类号： G03F900
CPC分类号： G03F1/32 , G03F1/58
摘要： The invention relates to a halftone phase shift photomask which is controlled with precision in terms of its transmittance at a wavelength applied to inspection, and measuring equipment, so that its quality can easily be assured even when its phase difference at an exposure wavelength is controlled at 180° C. with precision and its transmittance is set at 1 to 20% as desired at that wavelength. The halftone phase shift photomask (107) comprises on a transparent substrate (101) and a halftone phase shift film containing at least tantalum, oxygen, carbon and nitrogen, and has a multilayer structure comprising at least two or more different layers (102) and (103).
摘要翻译：本发明涉及一种半色调相移光掩模，其在对检查的波长的透射率和测量设备方面进行精确控制，使得即使将其在曝光波长处的相位差控制在 180℃，其透过率根据需要设定在1〜20％。半色调相移光掩模（107）包括在透明基板（101）和至少含有钽，氧，碳和氮的半色调相移膜，并且具有包括至少两个或多个不同层（102）和（103）。

6. 发明授权

US07618753B2 Photomask blank, photomask and method for producing those 有权
标题翻译：光掩模坯料，光掩模及其制造方法
公开(公告)号：US07618753B2
公开(公告)日：2009-11-17
申请号：US11662479
申请日：2005-08-10
申请人： Hiroki Yoshikawa , Yukio Inazuki , Yoshinori Kinase , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Yukio Inazuki , Yoshinori Kinase , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
IPC分类号： G03F1/00
CPC分类号： C23F4/00 , G03F1/32 , G03F1/54 , G03F1/80
摘要： A metal film is provided as a light shielding layer on one principle surface of a photomask substrate. The metal film cannot be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and can be etched by chlorine-based dry etching not containing oxygen (Cl-based dry etching) and fluorine-based dry etching (F-based dry etching). On the light shielding layer, a metal compound film as an antireflective layer. The metal compound film cannot be substantially etched by chlorine-based dry etching not containing oxygen (Cl based) and can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O) based) and fluorine-based dry etching (F based).
摘要翻译：在光掩模基板的一个主表面上设置金属膜作为遮光层。通过含有氧（（Cl + O）基干蚀刻）的基于氯的干蚀刻，不能基本上蚀刻金属膜，并且可以通过不含氧的氯基干法蚀刻（基于Cl的干蚀刻）和氟基干蚀刻（F-干蚀刻）。在遮光层上，作为抗反射层的金属化合物膜。金属化合物膜不能通过不含氧（Cl基）的氯基干蚀刻基本上被蚀刻，并且可以通过含氧（（Cl + O）基）的氯基干蚀刻和氟基干法中的至少一种进行蚀刻蚀刻（基于F）。

7. 发明授权

US07232631B2 Mask for charged particle beam exposure, and method of forming the same 有权
标题翻译：带电粒子束曝光掩模及其形成方法
公开(公告)号：US07232631B2
公开(公告)日：2007-06-19
申请号：US10839772
申请日：2004-05-04
申请人： Kenichi Morimoto , Yoshinori Kinase , Yuki Aritsuka
发明人： Kenichi Morimoto , Yoshinori Kinase , Yuki Aritsuka
IPC分类号： G03F9/00
CPC分类号： G03F1/20 , Y10S430/143
摘要： The present invention relates to an SOI substrate as a mask substrate for the charged particle beam exposure of which a silicon oxidized film has a suitable thickness for the fabrication of a mask, a silicon membrane layer has a suitable thickness as a mask membrane and is a low stress membrane having no defects and excellent uniformity and relates to its forming method. The SOI substrate is an SOI wafer which is obtained by forming an oxidized film on a first silicon wafer, forming a separation layer by hydrogen ion implantation into the first silicon wafer via the oxidized film, bonding the first silicon wafer onto a second silicon wafer, and cleaving the first silicon wafer from the second silicon wafer at the separation layer so that a silicon membrane layer is formed on the second silicon layer via the oxidized film. The method of forming the SOI wafer is characterized by comprising a step of causing epitaxial growth of silicon to form a silicon membrane layer on said silicon membrane layer simultaneously with doping either or both of boron and phosphorus.
摘要翻译：本发明涉及作为用于带电粒子束曝光的掩模衬底的SOI衬底，其中硅氧化膜具有用于制造掩模的合适厚度，硅膜层具有合适的厚度作为掩模膜，并且是低应力膜没有缺陷和优异的均匀性，涉及其成型方法。 SOI衬底是通过在第一硅晶片上形成氧化膜而获得的SOI晶片，通过氧化膜将第一硅晶片通过氢离子注入形成分离层，将第一硅晶片接合到第二硅晶片上，并且在分离层处从第二硅晶片切割第一硅晶片，使得经由氧化膜在第二硅层上形成硅膜层。形成SOI晶片的方法的特征在于包括使硅的外延生长在掺杂硼和磷中的一种或两种的同时在所述硅膜层上形成硅膜层的步骤。

8. 发明申请

US20070020534A1 Photomask blank, photomask and fabrication method thereof 有权
标题翻译：光掩模坯料，光掩模及其制造方法
公开(公告)号：US20070020534A1
公开(公告)日：2007-01-25
申请号：US11489477
申请日：2006-07-20
申请人： Hiroki Yoshikawa , Hiroshi Kubota , Yoshinori Kinase , Satoshi Okazaki , Tamotsu Maruyama , Takashi Haraguchi , Masahide Iwakata , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Hiroshi Kubota , Yoshinori Kinase , Satoshi Okazaki , Tamotsu Maruyama , Takashi Haraguchi , Masahide Iwakata , Yuichi Fukushima , Tadashi Saga
IPC分类号： B32B9/00 , B32B17/10 , B32B17/06 , G03F1/00
CPC分类号： G03F1/32 , G03F1/46 , G03F1/54 , G03F1/58 , Y10T428/24917 , Y10T428/31616
摘要： A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm−1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.
摘要翻译：在作为光掩模基板的石英等的透明基板的一个主面上形成曝光用遮光膜。遮光膜不仅可以用作所谓的“遮光膜”，而且可以用作抗反射膜。此外，遮光膜的总厚度为100nm以下，其中70％以上的铬化合物的厚度，每单位厚度的光密度（OD）为0.025nm ^{-1 。在光掩模坯料用于制造用于ArF曝光的掩模的情况下，遮光膜的厚度和组成选择为使得遮光膜的OD为193或193的屏蔽膜的OD为1.2至2.3 248 nm波长的光。}

9. 发明申请

US20060088774A1 Photomask blank, photomask and fabrication method thereof 有权
公开(公告)号：US20060088774A1
公开(公告)日：2006-04-27
申请号：US11255135
申请日：2005-10-21
申请人： Hiroki Yoshikawa , Yukio Inazuki , Yoshinori Kinase , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Yuichi Fukushima
发明人： Hiroki Yoshikawa , Yukio Inazuki , Yoshinori Kinase , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Yuichi Fukushima
IPC分类号： C23F1/00 , B32B9/00 , C03C25/68 , B32B17/06 , C03C15/00 , G03F1/00 , B44C1/22
CPC分类号： G03F1/32 , G03F1/54 , G03F1/58 , G03F1/80 , Y10T428/31616
摘要： A light-shieldable film is formed on one principal plane of an optically transparent substrate, and the light-shieldable film has a first light-shieldable film and a second light-shieldable film overlying the first light-shieldable film. The first light-shieldable film is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.

10. 发明授权

US08920666B2 Etching method and photomask blank processing method 有权
标题翻译：蚀刻方法和光掩模坯料加工方法
公开(公告)号：US08920666B2
公开(公告)日：2014-12-30
申请号：US12779998
申请日：2010-05-14
申请人： Shinichi Igarashi , Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa , Yoshinori Kinase
发明人： Shinichi Igarashi , Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa , Yoshinori Kinase
IPC分类号： C23F3/00 , G03F1/26 , H01L21/311 , G03F1/00 , G03F1/80 , G03F1/30 , G03F1/32
CPC分类号： G03F1/26 , G03F1/14 , G03F1/30 , G03F1/32 , G03F1/80 , H01L21/31116 , H01L21/31122 , H01L21/31138
摘要： Disclosed herein is a dry etching method for a work layer formed over a substrate, including the steps of forming a hard mask layer over the work layer formed over the substrate, forming a resist pattern over the hard mask layer, transferring the resist pattern to the hard mask layer by first dry etching conducted using the resist pattern, and patterning the work layer by second dry etching conducted using a hard mask pattern obtained upon the transfer to the hard mask layer, wherein after the hard mask layer is patterned by the first dry etching, the patterning of the work layer by the second dry etching is conducted through changing the concentration of an auxiliary ingredient of a dry etching gas, without changing a main ingredient of the dry etching gas, in an etching apparatus in which the first dry etching has been conducted.
摘要翻译：本文公开了一种用于在衬底上形成的工作层的干式蚀刻方法，包括以下步骤：在形成在衬底上的工作层上形成硬掩模层，在硬掩模层上形成抗蚀剂图案，将抗蚀剂图案转移到硬掩模层，通过使用抗蚀剂图案进行的第一干蚀刻，以及通过使用在转印到硬掩模层上获得的硬掩模图案进行的第二干蚀刻来对工作层进行图案化，其中在硬掩模层通过第一干法蚀刻时，通过在蚀刻装置中改变干蚀刻气体的辅助成分的浓度而不改变干蚀刻气体的主要成分，通过第二干蚀刻进行工作层的图案化，其中第一干蚀刻已经进行。

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