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    • 4. 发明授权
    • Method for cleaning photo mask
    • 清洁光罩的方法
    • US07718008B2
    • 2010-05-18
    • US11839655
    • 2007-08-16
    • Shu ShimadaNoriyuki TakahashiHiroko TanakaHiroyuki IshiiYusuke ShojiMasashi Ohtsuki
    • Shu ShimadaNoriyuki TakahashiHiroko TanakaHiroyuki IshiiYusuke ShojiMasashi Ohtsuki
    • B08B7/00G01N21/00
    • G03F7/70925G03F1/64G03F1/82
    • The present invention provides a method for cleaning a photo mask without the need for removal of the pellicle mounted on the photo mask, without the large scale equipment for washing with a solution, with a small number of steps for cleaning and inspection, and without the increase of the production cost. The method for cleaning a photo mask with a pellicle mounted, in which the pellicle frame has a gas introducing hole and a gas discharging hole, comprises: a step of introducing a gaseous substituting substance from the gas introducing hole in a pellicle inner space surrounded by the photo mask and the pellicle, substituting foreign substances on the photo mask, and discharging the foreign substances from the gas discharging hole; and a step of irradiating an ultraviolet ray to the photo mask, while an air or a nitrogen gas or a rare gas is introduced from the gas introducing hole, for degrading the substituted substituting substance so as to be gaseous, and discharging the same from the gas discharging hole.
    • 本发明提供了一种清洁光掩模的方法,而不需要除去安装在光掩模上的防护薄膜组件,而不需要用溶液洗涤的大规模设备,具有少量用于清洁和检查的步骤,并且没有 增加生产成本。 用防护薄膜组件清洁光罩的方法,其中防护薄膜组件框架具有气体导入孔和气体排出孔,包括:将气体取代物质从气体导入孔引入防护薄膜组件内部空间的步骤, 光掩模和防护薄膜组件,在光掩模上代替异物,并从排气孔排出异物; 以及从气体导入孔导入空气或氮气或稀有气体而将紫外线照射到光掩模的步骤,使取代的取代物质降解成气态,并将其从 气体排放孔。
    • 5. 发明申请
    • METHOD FOR CLEANING PHOTO MASK
    • 清洁照相胶片的方法
    • US20080251100A1
    • 2008-10-16
    • US11839655
    • 2007-08-16
    • Shu SHIMADANoriyuki TAKAHASHIHiroko TANAKAHiroyuki ISHIIYusuke SHOJIMasashi OHTSUKI
    • Shu SHIMADANoriyuki TAKAHASHIHiroko TANAKAHiroyuki ISHIIYusuke SHOJIMasashi OHTSUKI
    • B08B5/00
    • G03F7/70925G03F1/64G03F1/82
    • The present invention provides a method for cleaning a photo mask without the need for removal of the pellicle mounted on the photo mask, without the large scale equipment for washing with a solution, with a small number of steps for cleaning and inspection, and without the increase of the production cost. The method for cleaning a photo mask with a pellicle mounted, in which the pellicle frame has a gas introducing hole and a gas discharging hole, comprises: a step of introducing a gaseous substituting substance from the gas introducing hole in a pellicle inner space surrounded by the photo mask and the pellicle, substituting foreign substances on the photo mask, and discharging the foreign substances from the gas discharging hole; and a step of irradiating an ultraviolet ray to the photo mask, while an air or a nitrogen gas or a rare gas is introduced from the gas introducing hole, for degrading the substituted substituting substance so as to be gaseous, and discharging the same from the gas discharging hole.
    • 本发明提供了一种清洁光掩模的方法,而不需要除去安装在光掩模上的防护薄膜组件,而不需要用溶液洗涤的大规模设备,具有少量用于清洁和检查的步骤,并且没有 增加生产成本。 用防护薄膜组件清洁光罩的方法,其中防护薄膜组件框架具有气体导入孔和气体排出孔,包括:将气体取代物质从气体导入孔引入防护薄膜组件内部空间的步骤, 光掩模和防护薄膜组件,在光掩模上代替异物,并从排气孔排出异物; 以及从气体导入孔导入空气或氮气或稀有气体而将紫外线照射到光掩模的步骤,使取代的取代物质降解成气态,并将其从 气体排放孔。
    • 7. 发明授权
    • Blank for halftone phase shift photomask and halftone phase shift photomask
    • 用于半色调相移光掩模和半色调相移光掩模的空白
    • US06458496B2
    • 2002-10-01
    • US09736805
    • 2000-12-14
    • Toshiaki MotonagaToshifumi YokoyamaTakafumi OkamuraYoshinori KinaseHiroshi MohriJunji FujikawaHiro-o NakagawaShigeki SumidaSatoshi YusaMasashi Ohtsuki
    • Toshiaki MotonagaToshifumi YokoyamaTakafumi OkamuraYoshinori KinaseHiroshi MohriJunji FujikawaHiro-o NakagawaShigeki SumidaSatoshi YusaMasashi Ohtsuki
    • G03S900
    • G03F1/32B32B17/06
    • A blank for a halftone phase shift photomask in the present invention comprises a transparent substrate and a halftone phase shift film provided thereon, and said halftone phase shift film has a multilayer construction in which at least a first layer capable of being etched with a chlorinated gas and a second layer capable of being etched with a fluorinated gas are disposed in this order from the side near said transparent substrate. A film made of tantalum silicides is suitable to use as the second layer of the halftone phase shift film. When such a blank is first etched with a fluorinated gas and then etched with chlorinated gas, because an etching selective ratio to a transparent substrate made of synthetic quartz and the like can be taken sufficiently while maintaining the applicability to the exposure light with a short wavelength that is characteristic of silicide materials in addition to good chemical stability and good processing properties that are characteristic of tantalum materials, patterning in high precision will be made possible. As a result, it is possible to obtain an ideal halftone phase shift photomask excellent in stability after mask processing and in the applicability to the short wavelength.
    • 本发明中的半色调相移光掩模的空白包括透明基板和设置在其上的半色调相移膜,所述半色调相移膜具有多层结构,其中至少可以用氯化气体蚀刻的第一层 并且能够用氟化气体蚀刻的第二层从靠近所述透明基板的一侧依次设置。 由硅化钽制成的薄膜适用于半色调相移薄膜的第二层。 当首先用氟化气体蚀刻这样的坯料,然后用氯化气体蚀刻时,由于可以充分利用由合成石英等制成的透明基板的蚀刻选择比,同时保持对短波长的曝光光的适用性 这是硅化物材料的特征,除了钽材料的特征的良好的化学稳定性和良好的加工性能之外,将能够高精度地进行图案化。 结果,可以获得在掩模处理之后和在短波长的适用性方面优异的理想半色调相移光掩模。