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1. 发明授权

US06764792B1 Halftone phase shift photomask and blanks for halftone phase shift photomask for producing it 失效
标题翻译：半色调相移光掩模和用于生产它的半色调相移光掩模的空白
公开(公告)号：US06764792B1
公开(公告)日：2004-07-20
申请号：US09830598
申请日：2001-04-27
申请人： Junji Fujikawa , Yoshinori Kinase , Takafumi Okamura , Hiroshi Mohri , Toshifumi Yokoyama , Haruo Kokubo
发明人： Junji Fujikawa , Yoshinori Kinase , Takafumi Okamura , Hiroshi Mohri , Toshifumi Yokoyama , Haruo Kokubo
IPC分类号： G03F900
CPC分类号： G03F1/32 , G03F1/58
摘要： The invention relates to a halftone phase shift photomask which is controlled with precision in terms of its transmittance at a wavelength applied to inspection, and measuring equipment, so that its quality can easily be assured even when its phase difference at an exposure wavelength is controlled at 180° C. with precision and its transmittance is set at 1 to 20% as desired at that wavelength. The halftone phase shift photomask (107) comprises on a transparent substrate (101) and a halftone phase shift film containing at least tantalum, oxygen, carbon and nitrogen, and has a multilayer structure comprising at least two or more different layers (102) and (103).
摘要翻译：本发明涉及一种半色调相移光掩模，其在对检查的波长的透射率和测量设备方面进行精确控制，使得即使将其在曝光波长处的相位差控制在 180℃，其透过率根据需要设定在1〜20％。半色调相移光掩模（107）包括在透明基板（101）和至少含有钽，氧，碳和氮的半色调相移膜，并且具有包括至少两个或多个不同层（102）和（103）。

2. 发明授权

US07056624B2 Methods of manufacturing phase shift masks having etched substrate shifters with sidewalls rounded at top and bottom corners 失效
标题翻译：制造具有蚀刻的衬底移位器的相移掩模的方法，其侧壁在顶角和底角处被圆化
公开(公告)号：US07056624B2
公开(公告)日：2006-06-06
申请号：US10399203
申请日：2002-02-15
申请人： Haruo Kokubo
发明人： Haruo Kokubo
IPC分类号： G03F1/08 , G03F7/18 , C23F1/04 , C03C15/00
CPC分类号： G03F1/30
摘要： Methods of manufacturing a single sided engraving phase shift mask that includes a shifter part and a non-shifter part mutually adjacent on a substrate, and a shading layer pattern formed with a shading film and wherein a side wall part of a dug-down part has round, crooked portions at top and bottom corners of the sidewall part. The method includes forming a resist pattern having a selective opening at the shifter part, forming a dug-down part corresponding to the shifter part by using the resist pattern, wet etching the whole surface at the dug-down part forming side of the substrate, forming a shading film on the substrate, forming a resist pattern on the shading film, and forming a shading pattern having prescribed openings at the shifter part and non-shifter part.
摘要翻译：制造单面雕刻相移掩模的方法，其包括在基板上相互相邻的移动部分和非移动部分，以及形成有遮光膜的遮光层图案，并且其中所述下陷部分的侧壁部分具有在侧壁部分的顶部和底部角部处的圆形弯曲部分。该方法包括在移位部分形成具有选择性开口的抗蚀剂图案，通过使用抗蚀剂图案形成与移位部分对应的下陷部分，湿法蚀刻在基板的下陷部形成侧的整个表面，在基板上形成遮光膜，在遮光膜上形成抗蚀剂图案，并在移位部和非移动部分形成具有规定开口的遮光图案。

3. 发明授权

US06627359B2 Phase-shift photomask manufacturing method and phase-shift photomask 有权
标题翻译：相移光掩模制造方法和相移光掩模
公开(公告)号：US06627359B2
公开(公告)日：2003-09-30
申请号：US09859552
申请日：2001-05-17
申请人： Haruo Kokubo
发明人： Haruo Kokubo
IPC分类号： G03F900
CPC分类号： G03F1/30
摘要： In a method of manufacturing a phase-shift photomask comprising the steps of preparing a substrate transparent to an exposure light having a wavelength &lgr; and having a refraction factor n, forming, on the substrate, a pattern including a light-blocking portion blocking the light entering and a light transmission portion transmitting light, and etching the substrate on the transmission portion including a plurality of transmission sections so as to provide adjacent transmission sections, one having a recessed depth d1 and the other one having a recessed depth d2 so as to satisfy an equation of (d1−d2)=&lgr;/2(n−1), the etching step comprises a first etching process of a selective dry-etching to the light transmission section of the substrate having the depth d1 so as to provide a predetermined depth D1 after the formation of the light-blocking portion, a second etching process of a wet-etching process to the transmission section having the depth d1 so as to provide a depth of &lgr;/2(n−1), and a third etching process of a wet-etching to all the light transmission section having the depth d1 and the depth d2 so as to satisfy an equation of (d1−d2)=&lgr;/2(n−1).
摘要翻译：在制造相移光掩模的方法中，包括以下步骤：制备对具有波长lambd并且具有折射系数n的曝光光透明的基板，在基板上形成包括遮挡光的遮光部分的图案进入和透光部分，并且在包括多个透射部分的透射部分上蚀刻基底，以便提供相邻的透射部分，一个具有凹陷深度d1，另一个具有凹陷深度d2以满足（d1-d2）= lambd / 2（n-1）的等式，蚀刻步骤包括对具有深度d1的基板的透光部进行选择性干法蚀刻的第一蚀刻工艺，以提供预定的在形成遮光部分之后的深度D1，对具有深度d1的透射部分进行湿法蚀刻处理的第二蚀刻工艺，以提供lambd / 2的深度（n-1），以及对具有深度d1和深度d2的所有光透射部分进行湿蚀刻的第三蚀刻处理，以满足等式（d1-d2）= lambd / 2（n-1））。

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