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1. 发明授权

US06458496B2 Blank for halftone phase shift photomask and halftone phase shift photomask 有权
标题翻译：用于半色调相移光掩模和半色调相移光掩模的空白
公开(公告)号：US06458496B2
公开(公告)日：2002-10-01
申请号：US09736805
申请日：2000-12-14
申请人： Toshiaki Motonaga , Toshifumi Yokoyama , Takafumi Okamura , Yoshinori Kinase , Hiroshi Mohri , Junji Fujikawa , Hiro-o Nakagawa , Shigeki Sumida , Satoshi Yusa , Masashi Ohtsuki
发明人： Toshiaki Motonaga , Toshifumi Yokoyama , Takafumi Okamura , Yoshinori Kinase , Hiroshi Mohri , Junji Fujikawa , Hiro-o Nakagawa , Shigeki Sumida , Satoshi Yusa , Masashi Ohtsuki
IPC分类号： G03S900
CPC分类号： G03F1/32 , B32B17/06
摘要： A blank for a halftone phase shift photomask in the present invention comprises a transparent substrate and a halftone phase shift film provided thereon, and said halftone phase shift film has a multilayer construction in which at least a first layer capable of being etched with a chlorinated gas and a second layer capable of being etched with a fluorinated gas are disposed in this order from the side near said transparent substrate. A film made of tantalum silicides is suitable to use as the second layer of the halftone phase shift film. When such a blank is first etched with a fluorinated gas and then etched with chlorinated gas, because an etching selective ratio to a transparent substrate made of synthetic quartz and the like can be taken sufficiently while maintaining the applicability to the exposure light with a short wavelength that is characteristic of silicide materials in addition to good chemical stability and good processing properties that are characteristic of tantalum materials, patterning in high precision will be made possible. As a result, it is possible to obtain an ideal halftone phase shift photomask excellent in stability after mask processing and in the applicability to the short wavelength.
摘要翻译：本发明中的半色调相移光掩模的空白包括透明基板和设置在其上的半色调相移膜，所述半色调相移膜具有多层结构，其中至少可以用氯化气体蚀刻的第一层并且能够用氟化气体蚀刻的第二层从靠近所述透明基板的一侧依次设置。由硅化钽制成的薄膜适用于半色调相移薄膜的第二层。当首先用氟化气体蚀刻这样的坯料，然后用氯化气体蚀刻时，由于可以充分利用由合成石英等制成的透明基板的蚀刻选择比，同时保持对短波长的曝光光的适用性这是硅化物材料的特征，除了钽材料的特征的良好的化学稳定性和良好的加工性能之外，将能够高精度地进行图案化。结果，可以获得在掩模处理之后和在短波长的适用性方面优异的理想半色调相移光掩模。

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