会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 8. 发明授权
    • Semiconductor memory device and method of manufacturing the same
    • 半导体存储器件及其制造方法
    • US06831316B1
    • 2004-12-14
    • US10009826
    • 2002-03-19
    • Hideyuki MatsuokaTakeshi SakataShinichiro KimuraToshiaki YamanakaTsuyoshi KachiTomonori Sekiguchi
    • Hideyuki MatsuokaTakeshi SakataShinichiro KimuraToshiaki YamanakaTsuyoshi KachiTomonori Sekiguchi
    • H01L4700
    • H01L27/108H01L27/10894H01L27/10897
    • An existent DRAM memory cell comprises transistors as a switch and capacitors for accumulating storage charges in which the height of the capacitor has been increased more and more along with micro miniaturization, which directly leads to increase in the manufacturing cost. The invention of the present application provides a semiconductor memory device of a basic constitution in which a memory cell array having plural memory cells disposed on a semiconductor substrate and word lines and data lines for selecting the memory cells and a peripheral circuit at the periphery of the memory cell array wherein the memory cell comprises a multi-layer of a conductive layer, an insulating layer and plural semiconductor layers containing impurities, and a potential can be applied to the insulating layer enabling the tunneling effect. The invention of the present application concerns a memory cell not requiring capacitor and capable of being formed in simple steps.
    • 存在的DRAM存储单元包括作为开关的晶体管和用于累积存储电荷的电容器,其中电容器的高度随着微型化而逐渐增加,这直接导致制造成本的增加。 本申请的发明提供了一种基本结构的半导体存储器件,其中具有设置在半导体衬底上的多个存储单元的存储单元阵列和用于选择存储单元的字线和数据线以及外围电路的外围电路 存储单元阵列,其中存储单元包括导电层的多层,绝缘层和含有杂质的多个半导体层,并且可以将电位施加到能够实现隧道效应的绝缘层。 本申请的发明涉及不需要电容器并能够以简单的步骤形成的存储单元。