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1. 发明授权

US08216420B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08216420B2
公开(公告)日：2012-07-10
申请号：US11447011
申请日：2006-06-06
申请人： Hideyuki Kazumi , Akihiro Sano , Akitaka Makino , Hitoshi Tamura , Masamichi Sakaguchi
发明人： Hideyuki Kazumi , Akihiro Sano , Akitaka Makino , Hitoshi Tamura , Masamichi Sakaguchi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32192 , H01J37/32256 , H01J37/32302
摘要： A plasma processing apparatus for generating highly-uniform and stable plasma. In an apparatus for generating plasma by using a μ wave, concerning a method for rotating the μ wave in terms of time, a plurality of (larger than two and smaller than four) waveguides are used, then forming an angle between the respective waveguides, and setting a phase difference between respective electric fields therein. This configuration allows introduction of the circularly polarized wave into a processing chamber. At this time, there are provided configuration components such as a waveguide locating method, a unit therefor, a μ-wave merging box, and a reflective-wave control unit using a reflection control chamber.
摘要翻译：一种用于产生高度均匀和稳定的等离子体的等离子体处理装置。在通过使用μ波产生等离子体的装置中，关于在时间上旋转μ波的方法，使用多个（大于2个且小于4个）的波导，然后在各个波导之间形成一个角度，并在其中各个电场之间设定相位差。该配置允许将圆偏振波引入处理室。此时，提供了诸如波导定位方法，其单元，μ波合并盒和使用反射控制室的反射波控制单元的配置组件。

2. 发明申请

US20060283550A1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US20060283550A1
公开(公告)日：2006-12-21
申请号：US11447011
申请日：2006-06-06
申请人： Hideyuki Kazumi , Akihiro Sano , Akitaka Makino , Hitoshi Tamura , Masamichi Sakaguchi
发明人： Hideyuki Kazumi , Akihiro Sano , Akitaka Makino , Hitoshi Tamura , Masamichi Sakaguchi
IPC分类号： C23F1/00
CPC分类号： H01J37/32192 , H01J37/32256 , H01J37/32302
摘要： A plasma processing apparatus for generating highly-uniform and stable plasma. In an apparatus for generating plasma by using a μ wave, concerning a method for rotating the μ wave in terms of time, a plurality of (larger than two and smaller than four) waveguides are used, then forming an angle between the respective waveguides, and setting a phase difference between respective electric fields therein. This configuration allows introduction of the circularly polarized wave into a processing chamber. At this time, there are provided configuration components such as a waveguide locating method, a unit therefor, a μ-wave merging box, and a reflective-wave control unit using a reflection control chamber.
摘要翻译：一种用于产生高度均匀和稳定的等离子体的等离子体处理装置。在通过使用μ波产生等离子体的装置中，关于在时间上旋转mu波的方法，使用多个（大于2个且小于4个）的波导，然后在各个波导之间形成一个角度，并在其中各个电场之间设定相位差。该配置允许将圆偏振波引入处理室。此时，提供了诸如波导定位方法，其单元，mu波合并盒和使用反射控制室的反射波控制单元的配置部件。

3. 发明授权

US06919274B2 LSI device etching method and apparatus thereof 失效
公开(公告)号：US06919274B2
公开(公告)日：2005-07-19
申请号：US10780670
申请日：2004-02-19
申请人： Hideyuki Kazumi , Tsuyoshi Yoshida , Eiji Ikegami , Kouichi Nakaune , Masamichi Sakaguchi , Yasuyuki Miyamoto , Akihiro Sano
发明人： Hideyuki Kazumi , Tsuyoshi Yoshida , Eiji Ikegami , Kouichi Nakaune , Masamichi Sakaguchi , Yasuyuki Miyamoto , Akihiro Sano
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/44
CPC分类号： H01L21/31116
摘要： An apparatus for performing a plasma-etching of a LSI device including a Cu interconnection, a low-k film, and a diffusion prevention film has a treatment chamber, into which an etching gas is introduced, and a support table which is equipped with electrodes and on which said LSI device is placed. In this apparatus, the etching gasses are turned into plasma by supplying radio frequency power to electrodes provided within the treatment chamber, so that the LSI device is etched with ions of the plasma. In this apparatus, a sulfur-containing gas and a fluorine-containing gas are mixed to the etching gasses, so that the diffusion prevention film is selectively etched against the low-k film.

4. 发明申请

US20050026431A1 LSI device etching method and apparatus thereof 失效
标题翻译： LSI器件蚀刻方法及其装置
公开(公告)号：US20050026431A1
公开(公告)日：2005-02-03
申请号：US10780670
申请日：2004-02-19
申请人： Hideyuki Kazumi , Tsuyoshi Yoshida , Eiji Ikegami , Kouichi Nakaune , Masamichi Sakaguchi , Yasuyuki Miyamoto , Akihiro Sano
发明人： Hideyuki Kazumi , Tsuyoshi Yoshida , Eiji Ikegami , Kouichi Nakaune , Masamichi Sakaguchi , Yasuyuki Miyamoto , Akihiro Sano
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/44
CPC分类号： H01L21/31116
摘要： An apparatus for performing a plasma-etching of a LSI device including a Cu interconnection, a low-k film, and a diffusion prevention film has a treatment chamber, into which an etching gas is introduced, and a support table which is equipped with electrodes and on which said LSI device is placed. In this apparatus, the etching gasses are turned into plasma by supplying radio frequency power to electrodes provided within the treatment chamber, so that the LSI device is etched with ions of the plasma. In this apparatus, a sulfur-containing gas and a fluorine-containing gas are mixed to the etching gasses, so that the diffusion prevention film is selectively etched against the low-k film.
摘要翻译：用于进行包括Cu互连，低k膜和防扩散膜的LSI器件的等离子体蚀刻的设备具有其中引入蚀刻气体的处理室和配备有电极的支撑台并在其上放置所述LSI器件。在该装置中，通过向设置在处理室内的电极提供射频功率使蚀刻气体变成等离子体，从而利用等离子体的离子蚀刻LSI器件。在该装置中，将含硫气体和含氟气体混合到蚀刻气体中，使得防扩散膜针对低k膜选择性地蚀刻。

5. 发明授权

US09640366B2 Electron beam irradiation method and scanning electron microscope 有权
公开(公告)号：US09640366B2
公开(公告)日：2017-05-02
申请号：US13580288
申请日：2011-02-09
申请人： Toshiyuki Yokosuka , Minoru Yamazaki , Hideyuki Kazumi , Kazutami Tago
发明人： Toshiyuki Yokosuka , Minoru Yamazaki , Hideyuki Kazumi , Kazutami Tago
IPC分类号： H01J37/28 , H01J37/02 , H01J37/26
CPC分类号： H01J37/28 , H01J37/026 , H01J37/266 , H01J37/268 , H01J2237/0048 , H01J2237/24564 , H01J2237/2594
摘要： The present invention has for its object to provide a charged particle beam irradiation method and a charged particle beam apparatus which can suppress unevenness of electrification even when a plurality of different kinds of materials are contained in a pre-dosing area or degrees of density of patterns inside the pre-dosing area differs with positions.To accomplish the above object, a charged particle beam irradiation method and a charged particle beam apparatus are provided according to which the pre-dosing area is divided into a plurality of divisional areas and electrifications are deposited to the plural divisional areas by using a beam under different beam irradiation conditions. With the above construction, the electrifications can be deposited to the pre-dosing area on the basis of such an irradiation condition that the differences in electrification at individual positions inside the pre-dosing area can be suppressed and consequently, an influence an electric field has upon the charged particle beam and electrons given off from the sample can be suppressed.

6. 发明授权

US09019362B2 Charged particle beam device and a method of improving image quality of the same 有权
标题翻译：带电粒子束装置及其提高图像质量的方法
公开(公告)号：US09019362B2
公开(公告)日：2015-04-28
申请号：US13513280
申请日：2010-11-08
申请人： Jie Bai , Kenji Nakahira , Atsushi Miyamoto , Chie Shishido , Hideyuki Kazumi
发明人： Jie Bai , Kenji Nakahira , Atsushi Miyamoto , Chie Shishido , Hideyuki Kazumi
IPC分类号： H04N7/18 , G01N23/00 , G21K7/00 , G06K9/00 , G06K9/46 , G06K9/66 , H01J37/28 , H01J37/244 , H01L21/66
CPC分类号： H01J37/28 , H01J37/244 , H01J2237/24495 , H01J2237/2809 , H01J2237/2817 , H01L22/12
摘要： The invention relates to a technique of improving a contrast of a lower-layer pattern in a multi layer by synthesizing detected signals from a plurality of detectors by using an appropriate allocation ratio in accordance with pattern arrangement. In a charged particle beam device capable of improving image quality by using detected images obtained from a plurality of detectors and in a method of improving the image quality, a method of generating one or more output images from detected images corresponding to respective outputs of the detectors that are arranged at different locations is controlled by using information of a pattern direction, an edge strength, or others calculated from a design data or the detected image. In this manner, a detection area of the detected signals can be expanded by using the plurality of detectors, and the image quality such as the contrast can be improved by synthesizing the detected signals by using the pattern direction or the edge strength calculated from the design data or the detected images.
摘要翻译：本发明涉及一种通过根据图案布置使用合适的分配比例来合成来自多个检测器的检测信号来提高多层下层图案的对比度的技术。在能够通过使用从多个检测器获得的检测图像来提高图像质量的带电粒子束装置中，以及提高图像质量的方法中，提供一种从与检测器的各个输出对应的检测图像生成一个或多个输出图像的方法通过使用从设计数据或检测到的图像计算的图案方向，边缘强度或其他的信息来控制布置在不同位置处的位置。以这种方式，可以通过使用多个检测器来扩展检测信号的检测区域，并且可以通过使用从设计计算出的图案方向或边缘强度合成检测信号来提高诸如对比度的图像质量数据或检测到的图像。

7. 发明授权

US08481935B2 Scanning electron microscope 有权
标题翻译：扫描电子显微镜
公开(公告)号：US08481935B2
公开(公告)日：2013-07-09
申请号：US13190153
申请日：2011-07-25
申请人： Akira Ikegami , Minoru Yamazaki , Hideyuki Kazumi , Koichiro Takeuchi , Hisaya Murakoshi
发明人： Akira Ikegami , Minoru Yamazaki , Hideyuki Kazumi , Koichiro Takeuchi , Hisaya Murakoshi
IPC分类号： H01J37/26
CPC分类号： H01J37/244 , H01J37/21 , H01J37/28 , H01J37/3045 , H01J2237/24564 , H01J2237/2594 , H01J2237/28 , H01J2237/2816 , H01J2237/30461
摘要： A scanning electron microscope having a charged particle beam that when in a state being irradiated toward a sample, a voltage is applied to the sample so that the charged particle beam does not reach the sample. The scanning electron microscope also detects information on a potential of a sample using a signal obtained, and a device for automatically adjusting conditions based on the result of measuring.
摘要翻译：一种具有带电粒子束的扫描电子显微镜，其在朝向样品照射的状态下，向样品施加电压，使得带电粒子束未到达样品。扫描电子显微镜还使用所获得的信号检测样品的电位信息，以及根据测定结果自动调整条件的装置。

8. 发明授权

US07989768B2 Scanning electron microscope 有权
标题翻译：扫描电子显微镜
公开(公告)号：US07989768B2
公开(公告)日：2011-08-02
申请号：US12188870
申请日：2008-08-08
申请人： Akira Ikegami , Minoru Yamazaki , Hideyuki Kazumi , Koichiro Takeuchi , Hisaya Murakoshi
发明人： Akira Ikegami , Minoru Yamazaki , Hideyuki Kazumi , Koichiro Takeuchi , Hisaya Murakoshi
IPC分类号： H01J37/26 , H01J37/28
CPC分类号： H01J37/244 , H01J37/21 , H01J37/28 , H01J37/3045 , H01J2237/24564 , H01J2237/2594 , H01J2237/28 , H01J2237/2816 , H01J2237/30461
摘要： A scanning electron microscope having a charged particle beam that when in a state being irradiated toward a sample, a voltage is applied to the sample so that the charged particle beam does not reach the sample. The scanning electron microscope also detects information on a potential of a sample using a signal obtained, and a device for automatically adjusting conditions based on the result of measuring.
摘要翻译：一种具有带电粒子束的扫描电子显微镜，其在朝向样品照射的状态下，向样品施加电压，使得带电粒子束未到达样品。扫描电子显微镜还使用所获得的信号检测样品的电位信息，以及根据测定结果自动调整条件的装置。

9. 发明申请

US20090272899A1 Method for Detecting Information of an Electric Potential on a Sample and Charged Particle Beam Apparatus 有权
标题翻译：用于检测样品和带电粒子束装置上的电位信息的方法
公开(公告)号：US20090272899A1
公开(公告)日：2009-11-05
申请号：US11958625
申请日：2007-12-18
申请人： Minoru YAMAZAKI , Akira Ikegami , Hideyuki Kazumi , Osamu Nasu
发明人： Minoru YAMAZAKI , Akira Ikegami , Hideyuki Kazumi , Osamu Nasu
IPC分类号： G01N23/00
CPC分类号： G01N23/2251 , G01R29/24 , H01J37/28 , H01J37/292 , H01J2237/221 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594
摘要： An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application.
摘要翻译：本发明的目的是提供一种方法和装置，用于使用带电粒子束测量样品表面上的电位，同时抑制由带电粒子束施加引起的样品上的电位变化，或检测补偿用于由样品带电引起的装置的状况改变的值。为了实现上述目的，本发明提供了一种向样品施加电压使得带电粒子束不能到达样品的方法和装置（以下称为“镜像状态”），其中将带电粒子束施加到样品的状态，以及使用通过该电压施加获得的信号检测与样品上的电位有关的信息。

10. 发明授权

US06846363B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US06846363B2
公开(公告)日：2005-01-25
申请号：US10139302
申请日：2002-05-07
申请人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
发明人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
IPC分类号： H01J37/32 , C23C16/00 , H05H1/00
CPC分类号： H01J37/32174 , H01J37/32009 , H01J37/321
摘要： A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.
摘要翻译：通过向天线馈送由射频电源产生的射频电力产生等离子体，并且天线的一端通过可变电容的电容器接地到地球。法拉第屏蔽与地电隔离，可变电容器的电容被确定为这样一个值，即天线两端的电压可以相等于绝对值并反转以减少壁的部分去除等离子体点火后。在点燃等离子体时，电容器的电容被调整到比将壁损坏最小化的更大或更小的值。

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