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1. 发明授权

US08216420B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08216420B2
公开(公告)日：2012-07-10
申请号：US11447011
申请日：2006-06-06
申请人： Hideyuki Kazumi , Akihiro Sano , Akitaka Makino , Hitoshi Tamura , Masamichi Sakaguchi
发明人： Hideyuki Kazumi , Akihiro Sano , Akitaka Makino , Hitoshi Tamura , Masamichi Sakaguchi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32192 , H01J37/32256 , H01J37/32302
摘要： A plasma processing apparatus for generating highly-uniform and stable plasma. In an apparatus for generating plasma by using a μ wave, concerning a method for rotating the μ wave in terms of time, a plurality of (larger than two and smaller than four) waveguides are used, then forming an angle between the respective waveguides, and setting a phase difference between respective electric fields therein. This configuration allows introduction of the circularly polarized wave into a processing chamber. At this time, there are provided configuration components such as a waveguide locating method, a unit therefor, a μ-wave merging box, and a reflective-wave control unit using a reflection control chamber.
摘要翻译：一种用于产生高度均匀和稳定的等离子体的等离子体处理装置。在通过使用μ波产生等离子体的装置中，关于在时间上旋转μ波的方法，使用多个（大于2个且小于4个）的波导，然后在各个波导之间形成一个角度，并在其中各个电场之间设定相位差。该配置允许将圆偏振波引入处理室。此时，提供了诸如波导定位方法，其单元，μ波合并盒和使用反射控制室的反射波控制单元的配置组件。

2. 发明申请

US20060283550A1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US20060283550A1
公开(公告)日：2006-12-21
申请号：US11447011
申请日：2006-06-06
申请人： Hideyuki Kazumi , Akihiro Sano , Akitaka Makino , Hitoshi Tamura , Masamichi Sakaguchi
发明人： Hideyuki Kazumi , Akihiro Sano , Akitaka Makino , Hitoshi Tamura , Masamichi Sakaguchi
IPC分类号： C23F1/00
CPC分类号： H01J37/32192 , H01J37/32256 , H01J37/32302
摘要： A plasma processing apparatus for generating highly-uniform and stable plasma. In an apparatus for generating plasma by using a μ wave, concerning a method for rotating the μ wave in terms of time, a plurality of (larger than two and smaller than four) waveguides are used, then forming an angle between the respective waveguides, and setting a phase difference between respective electric fields therein. This configuration allows introduction of the circularly polarized wave into a processing chamber. At this time, there are provided configuration components such as a waveguide locating method, a unit therefor, a μ-wave merging box, and a reflective-wave control unit using a reflection control chamber.
摘要翻译：一种用于产生高度均匀和稳定的等离子体的等离子体处理装置。在通过使用μ波产生等离子体的装置中，关于在时间上旋转mu波的方法，使用多个（大于2个且小于4个）的波导，然后在各个波导之间形成一个角度，并在其中各个电场之间设定相位差。该配置允许将圆偏振波引入处理室。此时，提供了诸如波导定位方法，其单元，mu波合并盒和使用反射控制室的反射波控制单元的配置部件。

3. 发明授权

US06919274B2 LSI device etching method and apparatus thereof 失效
公开(公告)号：US06919274B2
公开(公告)日：2005-07-19
申请号：US10780670
申请日：2004-02-19
申请人： Hideyuki Kazumi , Tsuyoshi Yoshida , Eiji Ikegami , Kouichi Nakaune , Masamichi Sakaguchi , Yasuyuki Miyamoto , Akihiro Sano
发明人： Hideyuki Kazumi , Tsuyoshi Yoshida , Eiji Ikegami , Kouichi Nakaune , Masamichi Sakaguchi , Yasuyuki Miyamoto , Akihiro Sano
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/44
CPC分类号： H01L21/31116
摘要： An apparatus for performing a plasma-etching of a LSI device including a Cu interconnection, a low-k film, and a diffusion prevention film has a treatment chamber, into which an etching gas is introduced, and a support table which is equipped with electrodes and on which said LSI device is placed. In this apparatus, the etching gasses are turned into plasma by supplying radio frequency power to electrodes provided within the treatment chamber, so that the LSI device is etched with ions of the plasma. In this apparatus, a sulfur-containing gas and a fluorine-containing gas are mixed to the etching gasses, so that the diffusion prevention film is selectively etched against the low-k film.

4. 发明申请

US20050026431A1 LSI device etching method and apparatus thereof 失效
标题翻译： LSI器件蚀刻方法及其装置
公开(公告)号：US20050026431A1
公开(公告)日：2005-02-03
申请号：US10780670
申请日：2004-02-19
申请人： Hideyuki Kazumi , Tsuyoshi Yoshida , Eiji Ikegami , Kouichi Nakaune , Masamichi Sakaguchi , Yasuyuki Miyamoto , Akihiro Sano
发明人： Hideyuki Kazumi , Tsuyoshi Yoshida , Eiji Ikegami , Kouichi Nakaune , Masamichi Sakaguchi , Yasuyuki Miyamoto , Akihiro Sano
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/44
CPC分类号： H01L21/31116
摘要： An apparatus for performing a plasma-etching of a LSI device including a Cu interconnection, a low-k film, and a diffusion prevention film has a treatment chamber, into which an etching gas is introduced, and a support table which is equipped with electrodes and on which said LSI device is placed. In this apparatus, the etching gasses are turned into plasma by supplying radio frequency power to electrodes provided within the treatment chamber, so that the LSI device is etched with ions of the plasma. In this apparatus, a sulfur-containing gas and a fluorine-containing gas are mixed to the etching gasses, so that the diffusion prevention film is selectively etched against the low-k film.
摘要翻译：用于进行包括Cu互连，低k膜和防扩散膜的LSI器件的等离子体蚀刻的设备具有其中引入蚀刻气体的处理室和配备有电极的支撑台并在其上放置所述LSI器件。在该装置中，通过向设置在处理室内的电极提供射频功率使蚀刻气体变成等离子体，从而利用等离子体的离子蚀刻LSI器件。在该装置中，将含硫气体和含氟气体混合到蚀刻气体中，使得防扩散膜针对低k膜选择性地蚀刻。

5. 发明申请

US20090065479A1 DRY ETCHING METHOD OF HIGH-K FILM 审中-公开
标题翻译：高K膜的干蚀刻方法
公开(公告)号：US20090065479A1
公开(公告)日：2009-03-12
申请号：US12016434
申请日：2008-01-18
申请人： Koichi NAKAUNE , Masatoshi Oyama , Motohiro Tanaka , Hitoshi Tamura , Masamichi Sakaguchi
发明人： Koichi NAKAUNE , Masatoshi Oyama , Motohiro Tanaka , Hitoshi Tamura , Masamichi Sakaguchi
IPC分类号： C23F1/00
CPC分类号： H01L21/31122
摘要： An object of the invention is to provide a dry etching method of a metal oxide High-k film having etching characteristics which achieve a small etching rate difference and a small profile difference between open area and dense area while keeping a high selectivity to a polysilicon underlying film. In the method of dry-etching a High-k film by using a plasma, a small amount of fluorocarbon gas having a high carbon ratio is added to a BCl3 gas mixed with a rare gas.
摘要翻译：本发明的目的是提供一种具有蚀刻特性的金属氧化物High-k膜的干蚀刻方法，其具有小的蚀刻速率差异以及开放区域和致密区域之间的微小差异，同时保持对多晶硅潜在的高选择性电影。在使用等离子体干法蚀刻High-k膜的方法中，将少量碳含量高的碳氟化合物气体加入到与稀有气体混合的BCl 3气体中。

6. 发明授权

US08143175B2 Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US08143175B2
公开(公告)日：2012-03-27
申请号：US12435787
申请日：2009-05-05
申请人： Satoshi Une , Masamichi Sakaguchi , Kenichi Kuwabara , Tomoyoshi Ichimaru
发明人： Satoshi Une , Masamichi Sakaguchi , Kenichi Kuwabara , Tomoyoshi Ichimaru
IPC分类号： H01L21/31
CPC分类号： H01L21/32139 , H01L21/0338 , H01L21/28123 , H01L21/31116 , H01L21/32137
摘要： The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein the wiring process is performed without causing disconnection or deflection of the wiring. The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein during a step for etching a material 12 to be etched using a mask pattern composed of a photoresist 15 and inorganic films 14 and 13 made of SiN, SiON, SiO and the like formed on the material 12 to be etched, a mixed gas formed of a halogen-based gas such as chlorine-containing gas or bromine-containing gas and at least one fluorine-containing gas selected from a group of fluorine-containing gases composed of CF4, CHF3, SF6 and NF3 is used to reduce the mask pattern and the processing dimension of the material to be etched substantially equally during processing of the material 12 to be etched.
摘要翻译：本发明提供了一种用于使用等离子体蚀刻装置在半导体衬底上进行布线处理的干蚀刻方法，其中进行布线处理而不引起布线的断开或偏转。本发明提供一种使用等离子体蚀刻装置对半导体衬底进行布线处理的干式蚀刻方法，其中在使用由光致抗蚀剂15和无机膜14和13构成的掩模图案来蚀刻要蚀刻的材料12的步骤期间，在被蚀刻材料12上形成的SiN，SiON，SiO等，由含氯气体或含溴气体的卤素系气体形成的混合气体和至少一种选自使用由CF4，CHF3，SF6和NF3组成的含氟气体组，在待蚀刻材料12的加工期间，基本上相同地减少掩模图案和待蚀刻材料的加工尺寸。

7. 发明授权

US07913646B2 Vacuum processing apparatus and vacuum processing method 有权
标题翻译：真空加工设备和真空加工方法
公开(公告)号：US07913646B2
公开(公告)日：2011-03-29
申请号：US12199820
申请日：2008-08-28
申请人： Ken Kitaoka , Masamichi Sakaguchi , Kazue Takahasi
发明人： Ken Kitaoka , Masamichi Sakaguchi , Kazue Takahasi
IPC分类号： B05C11/06 , B05C13/00
CPC分类号： H01L21/67028 , C23C16/4407 , C23C16/45521 , C23C16/4586 , H01J37/32706 , H01J37/32862 , H01L21/6831
摘要： The invention provides a vacuum processing apparatus having a function for removing particles on the surface of the sample stage in order to improve the yield of the sample being processed. The vacuum processing apparatus comprises a processing chamber 104 disposed in a vacuum reactor and having plasma formed in the interior thereof, a sample stage 113 placed below the processing chamber 104 and having a sample 102 to be processed placed on the upper plane thereof for processing, and a gas introducing mechanism placed at an upper portion of the processing chamber 104 and having introduction holes for introducing processing gas into the processing chamber, wherein the sample stage 113 comprises grooves 117 and a gas supply port 119 for introducing thermal conductance gas 118 between the sample stage and the sample 102 to be processed, and a mechanism for introducing dust removal gas 120 through the gas supply port 119 between the sample stage 113 and the sample 102 to be processed or a dummy sample 202 having substantially the same shape as the sample to be processed placed on the sample stage 113 within the vacuum reactor, by which particles 201 attached to the sample stage 113 are removed via hydrodynamic force by the dust removal gas 120.
摘要翻译：本发明提供一种真空处理装置，其具有去除样品台表面上的颗粒的功能，以便提高被处理样品的产量。真空处理装置包括设置在真空反应器中并具有在其内部形成的等离子体的处理室104，放置在处理室104下方的样品台113，并且具有放置在其上平面上的待处理样品102用于处理，以及放置在处理室104的上部并具有用于将处理气体引入处理室的引入孔的气体引入机构，其中样品台113包括槽117和用于将导热气体118引入样品台和待处理样品102，以及用于通过样品台113和待处理样品102之间的气体供给口119引入除尘气体120的机构或具有与样品基本相同形状的虚拟样品202 待处理物放置在真空反应器内的样品台113上，通过该真空反应器中附着于样品台的颗粒201 ge 113通过除尘气体120的流体动力除去。

8. 发明申请

US20090081872A1 PLASMA ETCHING METHOD FOR ETCHING SAMPLE 审中-公开
标题翻译：用于蚀刻样品的等离子体蚀刻方法
公开(公告)号：US20090081872A1
公开(公告)日：2009-03-26
申请号：US12018836
申请日：2008-01-24
申请人： Hitoshi Kobayashi , Masamichi Sakaguchi , Koichi Nakaune , Masunori Ishihara
发明人： Hitoshi Kobayashi , Masamichi Sakaguchi , Koichi Nakaune , Masunori Ishihara
IPC分类号： H01L21/31 , H01L21/3065
CPC分类号： H01L21/31122
摘要： The invention provides an etching method having selectivity of a high-K material such as Al2O3 to polysilicon or hard mask. The present invention provides a method for manufacturing a semiconductor device by etching, using a plasma etching apparatus, a sample including an interlayer insulating layer 14 formed of a high-K material such as Al2O3 of a hard mask 11 and a Poly-Si layer 15 in contact with the interlayer insulating layer, wherein the method includes etching the high-K material 14 using BCl3, He and HBr while setting a temperature of a sample stage to normal temperature and applying a time-modulated high bias voltage, and repeating said etching process and a deposition process using SiCl4, BCl3 and He.
摘要翻译：本发明提供了一种具有高K材料如Al 2 O 3对多晶硅或硬掩模的选择性的蚀刻方法。本发明提供一种通过使用等离子体蚀刻装置的蚀刻制造半导体器件的方法，所述样品包括由诸如硬掩模11的Al 2 O 3的高K材料形成的层间绝缘层14和多晶硅层15 与所述层间绝缘层接触，其中所述方法包括在将样品台的温度设定为常温并施加时间调制的高偏压时，使用BCl 3，He和HBr蚀刻高K材料14，并重复所述蚀刻工艺和使用SiCl4，BCl3和He的沉积工艺。

9. 发明申请

US20080216865A1 Plasma Processing Method 审中-公开
标题翻译：等离子体处理方法
公开(公告)号：US20080216865A1
公开(公告)日：2008-09-11
申请号：US11834046
申请日：2007-08-06
申请人： Masunori Ishihara , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
发明人： Masunori Ishihara , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
IPC分类号： B08B6/00
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber. The invention provides a plasma processing method using a plasma processing apparatus comprising multiple plasma processing chambers for processing samples, a transfer chamber connected to the processing chambers for transferring samples, and a supply system for supplying gas which is the same gas as a transferring gas supplied to the transfer chamber to both the processing chambers and transfer chamber or to only the processing chambers, wherein the process comprises (b) a step of transferring the sample into the processing chamber with the transferring gas supplied to the processing chamber; (c) thereafter, generating plasma from the transferring gas supplied to the processing chamber while maintaining the supply of transferring gas to the processing chamber; (d) a step of switching the gas supplied to the processing chamber from transferring gas to processing gas while maintaining plasma by supplying processing gas continuously to the processing chamber; and (e) a step of subjecting the sample to plasma processing.
摘要翻译：本发明提供一种等离子体处理方法，其能够减少由于在将样品运送到处理室中的处理室中的压力波动造成的颗粒的飞散，进行等离子体处理并进行处理房间。本发明提供了一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括用于处理样品的多个等离子体处理室，连接到用于转移样品的处理室的传送室，以及用于供应气体的供应系统，所述气体与供应的转移气体相同到所述转移室到所述处理室和转移室或仅处理室，其中所述方法包括（b）将样品转移到所述处理室中的步骤，所述转移气体供应到所述处理室; （c）此后，从供给到处理室的转移气体产生等离子体，同时保持向处理室供给转移气体; （d）通过将处理气体连续供给到处理室，同时保持等离子体，将供给到处理室的气体从传送气体切换到处理气体的步骤; 和（e）使样品经受等离子体处理的步骤。

10. 发明申请

US20100300483A1 Vacuum Processing Method 有权
标题翻译：真空加工方法
公开(公告)号：US20100300483A1
公开(公告)日：2010-12-02
申请号：US12854435
申请日：2010-08-11
申请人： Ken Kitaoka , Masamichi Sakaguchi , Kazue Takahasi
发明人： Ken Kitaoka , Masamichi Sakaguchi , Kazue Takahasi
IPC分类号： B08B6/00
CPC分类号： H01L21/67028 , C23C16/4407 , C23C16/45521 , C23C16/4586 , H01J37/32706 , H01J37/32862 , H01L21/6831
摘要： A vacuum processing method using an apparatus including a processing chamber disposed in a vacuum reactor and having plasma formed thereon, a sample stage having a sample placed on the upper plane thereof, and a gas introducing mechanism, wherein the sample stage includes a gas supply port for introducing thermal conductance gas between the sample stage and the sample to be processed. The method includes placing a dummy sample on the sample stage, introducing dust removal gas between the sample stage and the dummy sample, and removing particles attached to the sample stage via the flow of dust removal gas.
摘要翻译：一种真空处理方法，其特征在于，使用包括设置在真空反应器中并具有形成有等离子体的处理室的装置，具有放置在其上面的样品的样品台和气体导入机构，所述样品台包括气体供给口用于在样品台和待处理样品之间引入导热气体。该方法包括将样品台放置在样品台上，在样品台和虚拟样品之间引入除尘气体，并通过除尘气体除去附着在样品台上的颗粒。

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