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1. 发明授权

US06353201B1 Discharge electrode, RF plasma generation apparatus using the same, and power supply method 有权
标题翻译：放电电极，使用其的RF等离子体发生装置以及供电方法
公开(公告)号：US06353201B1
公开(公告)日：2002-03-05
申请号：US09614134
申请日：2000-07-11
申请人： Hideo Yamakoshi , Kengou Yamaguchi , Masayoshi Murata , Yoshiaki Takeuchi , Yoshikazu Nawata , Koji Satake , Satoshi Kokaji , Shoji Morita , Masatoshi Hisatome , Tatsuji Horioka , Hiroshi Mashima
发明人： Hideo Yamakoshi , Kengou Yamaguchi , Masayoshi Murata , Yoshiaki Takeuchi , Yoshikazu Nawata , Koji Satake , Satoshi Kokaji , Shoji Morita , Masatoshi Hisatome , Tatsuji Horioka , Hiroshi Mashima
IPC分类号： B23K1000
CPC分类号： H01J37/32082 , H01J37/32532 , H05H1/46
摘要： A plurality of electrode bars are arranged in parallel with each other, and side electrode bars are connected to the corresponding opposite ends of the electrode bars, thereby forming a ladder-like RF discharge electrode. Power supply points are arranged axisymmetrically with respect to a reference line, which is a bisector which bisects one side of the RF discharge electrode, while being spaced a predetermined distance from the reference line, thereby suppressing voltage distribution on the ladder electrode, which has an effect on uniformity of discharge distribution, to a sufficiently low level of nonuniformity. Thus, uniform distribution of film deposition rate can be obtained, thereby enabling uniform deposition even in large-area applications.
摘要翻译：多个电极棒彼此平行地布置，并且侧电极棒连接到电极棒的相应的相对端，从而形成梯状RF放电电极。电源点相对于参考线轴对称地布置，该参考线是将RF放电电极的一侧平分的等分线，同时与基准线隔开预定距离，由此抑制梯形电极上的电压分布，其具有对均匀性的影响，达到足够低的不均匀度。因此，可以获得膜沉积速率的均匀分布，从而即使在大面积应用中也能均匀沉积。

2. 发明授权

US06456010B2 Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus 有权
标题翻译：放电等离子体产生方法，放电等离子体产生装置，半导体器件制造方法和半导体器件制造装置
公开(公告)号：US06456010B2
公开(公告)日：2002-09-24
申请号：US09756651
申请日：2001-01-10
申请人： Hideo Yamakoshi , Koji Satake , Yoshiaki Takeuchi , Hiroshi Mashima , Tatsufumi Aoi , Masayoshi Murata
发明人： Hideo Yamakoshi , Koji Satake , Yoshiaki Takeuchi , Hiroshi Mashima , Tatsufumi Aoi , Masayoshi Murata
IPC分类号： H01J724
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165
摘要： A discharge plasma generating method includes (a) opposing a discharge electrode having a substantially plane discharge portion to a substrate to be processed in a vacuum reaction vessel such that the discharge electrode and the substrate are substantially parallel to each other, (b) evacuating the vacuum reaction vessel and supplying a process gas to a space between the discharge electrode and the substrate, and (c) applying HF power to the discharge electrode such that an envelope representing the spatial distribution of a HF voltage &phgr; on the discharge electrode in a split second changes in accordance with a function including time as a parameter, thereby generating a discharge plasma of the process gas between the discharge electrode and the substrate, with substantially no standing wave of the HF voltage &phgr; generated on the discharge electrode.
摘要翻译：放电等离子体产生方法包括：（a）将具有基本上平面的放电部分的放电电极与真空反应容器中的待处理基板相对，使得放电电极和基板彼此基本平行;（b）将将真空反应容器供给到放电电极和基板之间的空间，并且（c）向放电电极施加HF功率，使得表示在分离的放电电极上的HF电压phi的空间分布的外壳根据包括时间的功能作为参数进行第二变化，从而在放电电极和基板之间产生处理气体的放电等离子体，基本上不会在放电电极上产生HF电压phi的驻波。

3. 发明授权

US06307146B1 Amorphous silicon solar cell 失效
标题翻译：非晶硅太阳能电池
公开(公告)号：US06307146B1
公开(公告)日：2001-10-23
申请号：US09404409
申请日：1999-09-23
申请人： Yoshiaki Takeuchi , Masayoshi Murata , Akemi Takano , Tatsuyuki Nishimiya , Syouji Morita , Tatsufumi Aoi , Tatsuji Horioka
发明人： Yoshiaki Takeuchi , Masayoshi Murata , Akemi Takano , Tatsuyuki Nishimiya , Syouji Morita , Tatsufumi Aoi , Tatsuji Horioka
IPC分类号： H01L310376
CPC分类号： H01L31/028 , H01L31/03762 , H01L31/075 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An amorphous silicon solar cell includes a substrate, a transparent electrode formed on this substrate, a power-generating film formed on this transparent electrode, and a back-side electrode formed on this power-generating film. The power-generating film is formed by sequentially stacking p-type/i-type/n-type hydrogenated amorphous silicon layers. The defect density of the i-type hydrogenated amorphous silicon layer is less than 1015 defects/cc.
摘要翻译：非晶硅太阳能电池包括基板，形成在该基板上的透明电极，形成在该透明电极上的发电膜和形成在该发光膜上的背面电极。发电膜通过依次层叠p型/ i型/ n型氢化非晶硅层而形成。 i型氢化非晶硅层的缺陷密度小于1015缺陷/ cc。

4. 发明授权

US06363881B2 Plasma chemical vapor deposition apparatus 有权
标题翻译：等离子体化学气相沉积装置
公开(公告)号：US06363881B2
公开(公告)日：2002-04-02
申请号：US09232600
申请日：1999-01-19
申请人： Masayoshi Murata , Yoshiaki Takeuchi , Hiroshi Mashima , Akemi Takano , Hirohisa Yoshida
发明人： Masayoshi Murata , Yoshiaki Takeuchi , Hiroshi Mashima , Akemi Takano , Hirohisa Yoshida
IPC分类号： C23C16509
CPC分类号： H01J37/32082 , H01J37/32541
摘要： Disclosed is a plasma chemical vapor deposition apparatus for forming an amorphous thin film, a microcrystalline thin film or a polycrystalline thin film on a surface of a target substrate by utilizing a glow discharge generated by an electric power supplied from a power source, comprising a reaction vessel, means for supplying a reactant gas into the reaction vessel, discharge means for discharge a waste gas of the reactant gas out of the reaction vessel, a ladder-shaped electrode for discharge generation arranged within the reaction vessel, a power source for supplying a high frequency power of 30 MHz to 200 MHz to the ladder-shaped electrode for a glow discharge generation, a heater for heating and supporting a target substrate, the heater being arranged within the reaction vessel in parallel to the ladder-shaped electrode for discharge generation, and a power distributor for uniformly distributing a high frequency power to the ladder-shaped electrode for discharge generation through a power supply wire.
摘要翻译：公开了一种等离子体化学气相沉积设备，用于通过利用由电源供应的电力产生的辉光放电来在目标衬底的表面上形成非晶薄膜，微晶薄膜或多晶薄膜，其包括反应容器，用于将反应气体供给到反应容器中的装置，用于将反应气体的废气排出反应容器的排出装置，设置在反应容器内的用于排放产生的梯形电极，用于辉光放电产生的梯形电极的高频功率为30MHz至200MHz，用于加热和支撑目标衬底的加热器，加热器与反应容器内平行于梯形电极放电产生以及用于均匀地将高频电力分配到梯形电极用于放电发生的功率分配器 h电源线。

5. 发明授权

US07141516B2 High frequency plasma generator and high frequency plasma generating method 失效
标题翻译：高频等离子体发生器和高频等离子体发生方法
公开(公告)号：US07141516B2
公开(公告)日：2006-11-28
申请号：US10519553
申请日：2003-10-01
申请人： Keisuke Kawamura , Akira Yamada , Hiroshi Mashima , Yoshiaki Takeuchi
发明人： Keisuke Kawamura , Akira Yamada , Hiroshi Mashima , Yoshiaki Takeuchi
IPC分类号： C23C16/00
CPC分类号： H01J37/32155 , H01J37/32091
摘要： An object is to provide a high-frequency plasma generating apparatus and process which can further advance uniformity of the thickness of a film on a substrate with a large area in comparison with conventional apparatuses. In a reaction chamber (1), a ground electrode (3) is disposed, and a discharge electrode (2) is disposed opposite to the ground electrode (3). A substrate (4) as a processing object is placed in close contact with the ground electrode (3). A high-frequency voltage is applied to the discharge electrode (2) so as to generate plasma between the ground electrode and the discharge electrode. An RF electric power supply (15) generates a first high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on a lateral portion of the discharge electrode (2). An RF electric power supply (16) generates a second high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on another lateral portion of the discharge electrode (2). Here, the second high-frequency voltage has the same frequency as that of the first high-frequency voltage and has a phase which varies with a low-frequency signal, which is modulated by a predetermined modulation signal.
摘要翻译：本发明的目的是提供一种高频等离子体发生装置和方法，与现有的装置相比，能够进一步提高基板上膜厚度的均匀性。在反应室（1）中设置接地电极（3），放电电极（2）与接地电极（3）相对设置。作为处理对象的基板（4）与接地电极（3）紧密接触。向放电电极（2）施加高频电压，以在接地电极和放电电极之间产生等离子体。 RF电源（15）产生第一高频电压，并且在放电电极（2）的侧面部分上的馈电点（9）上输出产生的电压。 RF电源（16）产生第二高频电压，并且在放电电极（2）的另一侧面部分上的馈电点（9）上输出产生的电压。这里，第二高频电压具有与第一高频电压相同的频率，并且具有随着由预定调制信号调制的低频信号而变化的相位。

6. 发明申请

US20050255255A1 Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus 有权
标题翻译：用于等离子体化学气相沉积装置的用于在大表面积上产生均匀的高频等离子体的方法和装置
公开(公告)号：US20050255255A1
公开(公告)日：2005-11-17
申请号：US10494528
申请日：2002-10-29
申请人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
发明人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
IPC分类号： C23C16/509 , H01J37/32 , H05H1/24 , C23C16/00
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082
摘要： This invention relates a plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. The present invention installs a first and a second power supply section on both ends of the discharge electrode installed in plasma chemical vapor deposition apparatus, which are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.
摘要翻译：本发明涉及一种等离子体生成装置，其用于通过安装在等离子体化学气相沉积装置中的非常高频（VHF）在大面积上均匀地产生等离子体。本发明在安装在等离子体化学气相沉积装置中的放电电极的两端安装第一和第二电源部分，该等离子体化学气相沉积装置被提供有交替的周期：第一和第二电源部分接收高频波相同的频率，以及接收不同的高频波的第二周期。以这种方式，等离子体产生的状态可以在每个周期中变化，并且当随时间平均时，使得在大的表面积上等离子体产生是均匀的。

7. 发明授权

US08088641B2 Process for producing photovoltaic device 失效
标题翻译：光电器件生产工艺
公开(公告)号：US08088641B2
公开(公告)日：2012-01-03
申请号：US12993252
申请日：2008-10-30
申请人： Hiroshi Mashima , Koichi Asakusa , Akemi Takano , Nobuki Yamashita , Yoshiaki Takeuchi
发明人： Hiroshi Mashima , Koichi Asakusa , Akemi Takano , Nobuki Yamashita , Yoshiaki Takeuchi
IPC分类号： H01L21/00 , H01L21/20 , H01L21/36 , C23C8/00
CPC分类号： H01L31/075 , H01L31/03762 , H01L31/0463 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate. The production process comprises a p-layer formation step of depositing a p-type amorphous silicon layer, an i-layer formation step of depositing an i-type amorphous silicon layer on the p-type amorphous silicon layer, and an n-layer formation step of depositing an n-type amorphous silicon layer on the i-type amorphous silicon layer, wherein the n-layer formation step comprises a first n-layer formation step of depositing a first n-layer on the i-type amorphous silicon layer, and a second n-layer formation step of depositing a second n-layer on the first n-layer, and the deposition conditions for the first n-layer formation step are conditions that yield a higher crystallization ratio than the deposition conditions for the second n-layer formation step, for deposition onto the same base material substrate.
摘要翻译：一种制造光电器件的方法，其中当在i型非晶硅层上提供n型非晶硅层时，可以在不降低沉积速率的情况下实现期望的结晶比。该制造方法包括沉积p型非晶硅层的p层形成步骤，在p型非晶硅层上沉积i型非晶硅层的i层形成步骤和n层形成在i型非晶硅层上沉积n型非晶硅层的步骤，其中n层形成步骤包括在i型非晶硅层上沉积第一n层的第一n层形成步骤，以及在第一n层上沉积第二n层的第二n层形成步骤，并且用于第一n层形成步骤的沉积条件是产生比第二n层的沉积条件更高的结晶比的条件层形成步骤，用于沉积到相同的基底材料基底上。

8. 发明授权

US07833587B2 Method for plasma-enhanced chemical vapor deposition and apparatus for plasma-enhanced chemical vapor deposition 有权
标题翻译：等离子体增强化学气相沉积方法和等离子体增强化学气相沉积装置
公开(公告)号：US07833587B2
公开(公告)日：2010-11-16
申请号：US10518371
申请日：2003-10-29
申请人： Hiroshi Mashima , Akira Yamada , Keisuke Kawamura , Kenji Tagashira , Yoshiaki Takeuchi
发明人： Hiroshi Mashima , Akira Yamada , Keisuke Kawamura , Kenji Tagashira , Yoshiaki Takeuchi
IPC分类号： H05H1/24 , C23C16/00 , B01J19/08 , G21H1/00 , G21H5/00 , H01F41/00
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082 , H01J37/32577
摘要： A method for making the characteristics of the distribution of film thickness uniform is provided, avoiding generation of phase differences among streams of high-frequency electric power by manipulating the electrical characteristics of cables through which the high-frequency electric power is transmitted. Coaxial cables (19a to 19h and 24a to 24h) having a standard length and vacuum cables (20a to 20h and 25a to 25h) are installed, then a film is formed on a substrate by actually supplying high-frequency electric power, and thereafter the condition of vapor deposition such as the thickness of the film is observed. Based on the observations, the full lengths of the coaxial cables which communicate with the feeding points and the electrodes which correspond with positions over the substrate which need to be adjusted are changed. The coaxial cables are installed again, and high-frequency electric power equivalent to that used in the previous operation is supplied to form a film. The distribution of the film formed on the substrate is made uniform by repeating the above operations.
摘要翻译：提供了一种使膜厚分布特性均匀的方法，通过操纵传输高频电力的电缆的电气特性，避免了高频电力流之间的相位差的产生。安装具有标准长度和真空电缆（20a〜20h，25a〜25h）的同轴电缆（19a〜19h，24a〜24h），通过实际供给高频电力而在基板上形成膜，之后，观察气相沉积的条件，如膜的厚度。基于这些观察，改变了与馈送点和电极相连的同轴电缆的全部长度，这些电极对应于需要调整的衬底上的位置。再次安装同轴电缆，提供与上次操作相同的高频电力，形成薄膜。通过重复上述操作，使形成在基板上的膜的分布均匀。

9. 发明申请

US20110092012A1 PROCESS FOR PRODUCING PHOTOVOLTAIC DEVICE 失效
标题翻译：生产光伏器件的方法
公开(公告)号：US20110092012A1
公开(公告)日：2011-04-21
申请号：US12993252
申请日：2008-10-30
申请人： Hiroshi Mashima , Koichi Asakusa , Akemi Takano , Nobuki Yamashita , Yoshiaki Takeuchi
发明人： Hiroshi Mashima , Koichi Asakusa , Akemi Takano , Nobuki Yamashita , Yoshiaki Takeuchi
IPC分类号： H01L31/18
CPC分类号： H01L31/075 , H01L31/03762 , H01L31/0463 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate. The production process comprises a p-layer formation step of depositing a p-type amorphous silicon layer, an i-layer formation step of depositing an i-type amorphous silicon layer on the p-type amorphous silicon layer, and an n-layer formation step of depositing an n-type amorphous silicon layer on the i-type amorphous silicon layer, wherein the n-layer formation step comprises a first n-layer formation step of depositing a first n-layer on the i-type amorphous silicon layer, and a second n-layer formation step of depositing a second n-layer on the first n-layer, and the deposition conditions for the first n-layer formation step are conditions that yield a higher crystallization ratio than the deposition conditions for the second n-layer formation step, for deposition onto the same base material substrate.
摘要翻译：一种制造光电器件的方法，其中当在i型非晶硅层上提供n型非晶硅层时，可以在不降低沉积速率的情况下实现期望的结晶比。制造方法包括沉积p型非晶硅层的p层形成步骤，在p型非晶硅层上沉积i型非晶硅层的i层形成步骤和n层形成在i型非晶硅层上沉积n型非晶硅层的步骤，其中所述n层形成步骤包括在i型非晶硅层上沉积第一n层的第一n层形成步骤，以及在第一n层上沉积第二n层的第二n层形成步骤，并且用于第一n层形成步骤的沉积条件是产生比第二n层的沉积条件更高的结晶比的条件层形成步骤，用于沉积到相同的基底材料基底上。

10. 发明授权

US07205034B2 Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus 有权
标题翻译：用于等离子体化学气相沉积装置的用于在大表面积上产生均匀的高频等离子体的方法和装置
公开(公告)号：US07205034B2
公开(公告)日：2007-04-17
申请号：US10494528
申请日：2002-10-29
申请人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
发明人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
IPC分类号： H05H1/24
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082
摘要： A plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. A first and a second power supply section are installed on both ends of the discharge electrode installed in a plasma chemical vapor deposition apparatus, and are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.
摘要翻译：一种等离子体产生装置，其通过安装在等离子体化学气相沉积装置中的非常高频（VHF）在大面积上均匀地产生等离子体。第一和第二电源部安装在安装在等离子体化学气相沉积装置中的放电电极的两端，并且被提供有交替的周期：第一周期，其中第一和第二电源部分接收高频相同的频率，以及接收不同的高频波的第二周期。以这种方式，等离子体产生的状态可以在每个周期中变化，并且当随时间平均时，使得在大的表面积上等离子体产生是均匀的。

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