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1. 发明授权

US08088641B2 Process for producing photovoltaic device 失效
标题翻译：光电器件生产工艺
公开(公告)号：US08088641B2
公开(公告)日：2012-01-03
申请号：US12993252
申请日：2008-10-30
申请人： Hiroshi Mashima , Koichi Asakusa , Akemi Takano , Nobuki Yamashita , Yoshiaki Takeuchi
发明人： Hiroshi Mashima , Koichi Asakusa , Akemi Takano , Nobuki Yamashita , Yoshiaki Takeuchi
IPC分类号： H01L21/00 , H01L21/20 , H01L21/36 , C23C8/00
CPC分类号： H01L31/075 , H01L31/03762 , H01L31/0463 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate. The production process comprises a p-layer formation step of depositing a p-type amorphous silicon layer, an i-layer formation step of depositing an i-type amorphous silicon layer on the p-type amorphous silicon layer, and an n-layer formation step of depositing an n-type amorphous silicon layer on the i-type amorphous silicon layer, wherein the n-layer formation step comprises a first n-layer formation step of depositing a first n-layer on the i-type amorphous silicon layer, and a second n-layer formation step of depositing a second n-layer on the first n-layer, and the deposition conditions for the first n-layer formation step are conditions that yield a higher crystallization ratio than the deposition conditions for the second n-layer formation step, for deposition onto the same base material substrate.
摘要翻译：一种制造光电器件的方法，其中当在i型非晶硅层上提供n型非晶硅层时，可以在不降低沉积速率的情况下实现期望的结晶比。该制造方法包括沉积p型非晶硅层的p层形成步骤，在p型非晶硅层上沉积i型非晶硅层的i层形成步骤和n层形成在i型非晶硅层上沉积n型非晶硅层的步骤，其中n层形成步骤包括在i型非晶硅层上沉积第一n层的第一n层形成步骤，以及在第一n层上沉积第二n层的第二n层形成步骤，并且用于第一n层形成步骤的沉积条件是产生比第二n层的沉积条件更高的结晶比的条件层形成步骤，用于沉积到相同的基底材料基底上。

2. 发明申请

US20110092012A1 PROCESS FOR PRODUCING PHOTOVOLTAIC DEVICE 失效
标题翻译：生产光伏器件的方法
公开(公告)号：US20110092012A1
公开(公告)日：2011-04-21
申请号：US12993252
申请日：2008-10-30
申请人： Hiroshi Mashima , Koichi Asakusa , Akemi Takano , Nobuki Yamashita , Yoshiaki Takeuchi
发明人： Hiroshi Mashima , Koichi Asakusa , Akemi Takano , Nobuki Yamashita , Yoshiaki Takeuchi
IPC分类号： H01L31/18
CPC分类号： H01L31/075 , H01L31/03762 , H01L31/0463 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate. The production process comprises a p-layer formation step of depositing a p-type amorphous silicon layer, an i-layer formation step of depositing an i-type amorphous silicon layer on the p-type amorphous silicon layer, and an n-layer formation step of depositing an n-type amorphous silicon layer on the i-type amorphous silicon layer, wherein the n-layer formation step comprises a first n-layer formation step of depositing a first n-layer on the i-type amorphous silicon layer, and a second n-layer formation step of depositing a second n-layer on the first n-layer, and the deposition conditions for the first n-layer formation step are conditions that yield a higher crystallization ratio than the deposition conditions for the second n-layer formation step, for deposition onto the same base material substrate.
摘要翻译：一种制造光电器件的方法，其中当在i型非晶硅层上提供n型非晶硅层时，可以在不降低沉积速率的情况下实现期望的结晶比。制造方法包括沉积p型非晶硅层的p层形成步骤，在p型非晶硅层上沉积i型非晶硅层的i层形成步骤和n层形成在i型非晶硅层上沉积n型非晶硅层的步骤，其中所述n层形成步骤包括在i型非晶硅层上沉积第一n层的第一n层形成步骤，以及在第一n层上沉积第二n层的第二n层形成步骤，并且用于第一n层形成步骤的沉积条件是产生比第二n层的沉积条件更高的结晶比的条件层形成步骤，用于沉积到相同的基底材料基底上。

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