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1. 发明授权

US07833587B2 Method for plasma-enhanced chemical vapor deposition and apparatus for plasma-enhanced chemical vapor deposition 有权
标题翻译：等离子体增强化学气相沉积方法和等离子体增强化学气相沉积装置
公开(公告)号：US07833587B2
公开(公告)日：2010-11-16
申请号：US10518371
申请日：2003-10-29
申请人： Hiroshi Mashima , Akira Yamada , Keisuke Kawamura , Kenji Tagashira , Yoshiaki Takeuchi
发明人： Hiroshi Mashima , Akira Yamada , Keisuke Kawamura , Kenji Tagashira , Yoshiaki Takeuchi
IPC分类号： H05H1/24 , C23C16/00 , B01J19/08 , G21H1/00 , G21H5/00 , H01F41/00
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082 , H01J37/32577
摘要： A method for making the characteristics of the distribution of film thickness uniform is provided, avoiding generation of phase differences among streams of high-frequency electric power by manipulating the electrical characteristics of cables through which the high-frequency electric power is transmitted. Coaxial cables (19a to 19h and 24a to 24h) having a standard length and vacuum cables (20a to 20h and 25a to 25h) are installed, then a film is formed on a substrate by actually supplying high-frequency electric power, and thereafter the condition of vapor deposition such as the thickness of the film is observed. Based on the observations, the full lengths of the coaxial cables which communicate with the feeding points and the electrodes which correspond with positions over the substrate which need to be adjusted are changed. The coaxial cables are installed again, and high-frequency electric power equivalent to that used in the previous operation is supplied to form a film. The distribution of the film formed on the substrate is made uniform by repeating the above operations.
摘要翻译：提供了一种使膜厚分布特性均匀的方法，通过操纵传输高频电力的电缆的电气特性，避免了高频电力流之间的相位差的产生。安装具有标准长度和真空电缆（20a〜20h，25a〜25h）的同轴电缆（19a〜19h，24a〜24h），通过实际供给高频电力而在基板上形成膜，之后，观察气相沉积的条件，如膜的厚度。基于这些观察，改变了与馈送点和电极相连的同轴电缆的全部长度，这些电极对应于需要调整的衬底上的位置。再次安装同轴电缆，提供与上次操作相同的高频电力，形成薄膜。通过重复上述操作，使形成在基板上的膜的分布均匀。

2. 发明授权

US07141516B2 High frequency plasma generator and high frequency plasma generating method 失效
标题翻译：高频等离子体发生器和高频等离子体发生方法
公开(公告)号：US07141516B2
公开(公告)日：2006-11-28
申请号：US10519553
申请日：2003-10-01
申请人： Keisuke Kawamura , Akira Yamada , Hiroshi Mashima , Yoshiaki Takeuchi
发明人： Keisuke Kawamura , Akira Yamada , Hiroshi Mashima , Yoshiaki Takeuchi
IPC分类号： C23C16/00
CPC分类号： H01J37/32155 , H01J37/32091
摘要： An object is to provide a high-frequency plasma generating apparatus and process which can further advance uniformity of the thickness of a film on a substrate with a large area in comparison with conventional apparatuses. In a reaction chamber (1), a ground electrode (3) is disposed, and a discharge electrode (2) is disposed opposite to the ground electrode (3). A substrate (4) as a processing object is placed in close contact with the ground electrode (3). A high-frequency voltage is applied to the discharge electrode (2) so as to generate plasma between the ground electrode and the discharge electrode. An RF electric power supply (15) generates a first high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on a lateral portion of the discharge electrode (2). An RF electric power supply (16) generates a second high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on another lateral portion of the discharge electrode (2). Here, the second high-frequency voltage has the same frequency as that of the first high-frequency voltage and has a phase which varies with a low-frequency signal, which is modulated by a predetermined modulation signal.
摘要翻译：本发明的目的是提供一种高频等离子体发生装置和方法，与现有的装置相比，能够进一步提高基板上膜厚度的均匀性。在反应室（1）中设置接地电极（3），放电电极（2）与接地电极（3）相对设置。作为处理对象的基板（4）与接地电极（3）紧密接触。向放电电极（2）施加高频电压，以在接地电极和放电电极之间产生等离子体。 RF电源（15）产生第一高频电压，并且在放电电极（2）的侧面部分上的馈电点（9）上输出产生的电压。 RF电源（16）产生第二高频电压，并且在放电电极（2）的另一侧面部分上的馈电点（9）上输出产生的电压。这里，第二高频电压具有与第一高频电压相同的频率，并且具有随着由预定调制信号调制的低频信号而变化的相位。

3. 发明申请

US20050272261A1 Plasma chemical vapor deposition method and plasma chemical vapor deposition device 有权
标题翻译：等离子体化学气相沉积法和等离子体化学气相沉积装置
公开(公告)号：US20050272261A1
公开(公告)日：2005-12-08
申请号：US10518371
申请日：2003-10-29
申请人： Hiroshi Mashima , Akira Yamada , Keisuke Kawamura , Kenji Tagashira , Yoshiaki Takeuchi
发明人： Hiroshi Mashima , Akira Yamada , Keisuke Kawamura , Kenji Tagashira , Yoshiaki Takeuchi
IPC分类号： C23C16/509 , H01J37/32 , H01L21/205 , H01J7/24 , H01L21/44 , H05B31/26
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082 , H01J37/32577
摘要： A method for making the characteristics of the distribution of film thickness uniform is provided, avoiding generation of phase differences among streams of high-frequency electric power by manipulating the electrical characteristics of cables through which the high-frequency electric power is transmitted. Coaxial cables (19a to 19h and 24a to 24h) having a standard length and vacuum cables (20a to 20h and 25a to 25h) are installed, then a film is formed on a substrate by actually supplying high-frequency electric power, and thereafter the condition of vapor deposition such as the thickness of the film is observed. Based on the observations, the full lengths of the coaxial cables which communicate with the feeding points and the electrodes which correspond with positions over the substrate which need to be adjusted are changed. The coaxial cables are installed again, and high-frequency electric power equivalent to that used in the previous operation is supplied to form a film. The distribution of the film formed on the substrate is made uniform by repeating the above operations.
摘要翻译：提供了一种使膜厚分布特性均匀的方法，通过操纵传输高频电力的电缆的电气特性，避免了高频电力流之间的相位差的产生。同轴电缆（19 a至19 h和24 a至24 h）安装有标准长度和真空电缆（20 a至20 h和25 a至25 h），然后通过实际供电高度在基板上形成薄膜频率电力，然后观察气相沉积的条件，例如膜的厚度。基于这些观察，改变了与馈送点和电极相连的同轴电缆的全部长度，这些电极对应于需要调节的衬底上的位置。再次安装同轴电缆，提供与上次操作相同的高频电力，形成薄膜。通过重复上述操作，使形成在基板上的膜的分布均匀。

4. 发明申请

US20050241768A1 High frequency plasma generator and high frequency plasma generating method 失效
标题翻译：高频等离子体发生器和高频等离子体发生方法
公开(公告)号：US20050241768A1
公开(公告)日：2005-11-03
申请号：US10519553
申请日：2003-10-01
申请人： Keisuke Kawamura , Akira Yamada , Hiroshi Mashima , Yoshiaki Takeuchi
发明人： Keisuke Kawamura , Akira Yamada , Hiroshi Mashima , Yoshiaki Takeuchi
IPC分类号： H05H1/46 , C23C16/509 , C23F1/00 , H01J37/32 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32155 , H01J37/32091
摘要： An object is to provide a high-frequency plasma generating apparatus and process which can further advance uniformity of the thickness of a film on a substrate with a large area in comparison with conventional apparatuses. In a reaction chamber (1), a ground electrode (3) is disposed, and a discharge electrode (2) is disposed opposite to the ground electrode (3). A substrate (4) as a processing object is placed in close contact with the ground electrode (3). A high-frequency voltage is applied to the discharge electrode (2) so as to generate plasma between the ground electrode and the discharge electrode. An RF electric power supply (15) generates a first high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on a lateral portion of the discharge electrode (2). An RF electric power supply (16) generates a second high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on another lateral portion of the discharge electrode (2). Here, the second high-frequency voltage has the same frequency as that of the first high-frequency voltage and has a phase which varies with a low-frequency signal, which is modulated by a predetermined modulation signal.
摘要翻译：本发明的目的是提供一种高频等离子体发生装置和方法，与现有的装置相比，能够进一步提高基板上膜厚度的均匀性。在反应室（1）中设置接地电极（3），放电电极（2）与接地电极（3）相对设置。作为处理对象的基板（4）与接地电极（3）紧密接触。向放电电极（2）施加高频电压，以在接地电极和放电电极之间产生等离子体。 RF电源（15）产生第一高频电压，并且在放电电极（2）的侧面部分上的馈电点（9）上输出产生的电压。 RF电源（16）产生第二高频电压，并且在放电电极（2）的另一侧面部分上的馈电点（9）上输出产生的电压。这里，第二高频电压具有与第一高频电压相同的频率，并且具有随着由预定调制信号调制的低频信号而变化的相位。

5. 发明申请

US20050223990A1 Plasma processing system and its substrate processing process, plasma enhanced chemical vapor deposition system and its film deposition process 审中-公开
标题翻译：等离子体处理系统及其基板加工工艺，等离子体增强化学气相沉积系统及其薄膜沉积工艺
公开(公告)号：US20050223990A1
公开(公告)日：2005-10-13
申请号：US10519475
申请日：2003-10-01
申请人： Keisuke Kawamura , Akira Yamada , Hiroshi Mashima , Kenji Tagashira , Yoshiaki Takeuchi
发明人： Keisuke Kawamura , Akira Yamada , Hiroshi Mashima , Kenji Tagashira , Yoshiaki Takeuchi
IPC分类号： H05H1/46 , B01J19/08 , C23C16/509 , H01J37/32 , H01L21/205 , C23C16/00
CPC分类号： H01J37/32082 , C23C16/509 , H01J37/32183 , H01J37/32541
摘要： An object is to provide apparatuses for plasma processing which can make the distribution of the film thickness of a substance on a substrate uniform, methods of processing a substrate therewith, apparatuses for plasma-enhanced chemical vapor deposition, and methods for film formation therewith. When a desired substance is vapor deposited on the surface of a substrate (3), characteristics of the distribution of the thickness of a film on the substrate having a large area are improved by eliminating local imbalance in the distribution of the film thickness originating from deviation in the distribution of voltage on the ladder electrode (2), by way of adjusting impedance matching between each coaxial cable and corresponding feeding point for the ladder-shaped electrode (2) using branch cables provided to the coaxial cables for supplying high-frequency electric power to a ladder-shaped electrode (2) so as to make the film thickness uniform in the direction at right angles with the direction of fed electric power, whereby high-frequency electric power which is fed to each longitudinal electrode rod (2a) of the ladder-shaped electrode (2) can be adjusted, and distribution of voltage at a right or left part of the substrate and distribution of voltage at a central part of the substrate can be balanced, as well as by way of promoting uniformity in the distribution of the film thickness in the direction of fed electric power, by supplying streams of high-frequency electric power having the same frequency from two power supplies to the ladder-shaped electrode (2) with the phase difference between the high-frequency electric powers being varied over time.
摘要翻译：目的在于提供能够使基板上的物质的膜厚分布均匀的等离子体处理装置，用于处理基板的方法，等离子体增强化学气相沉积的装置及其成膜方法。当在基板（3）的表面上气相沉积所需物质时，通过消除由于偏差导致的膜厚度分布的局部不平衡，改善了具有大面积的基板上的膜的厚度分布特性在梯形电极（2）上的电压分配中，通过使用提供给用于提供高频电气的同轴电缆的分支电缆来调节每个同轴电缆与梯形电极（2）的相应馈电点之间的阻抗匹配向梯形电极（2）施加电力以使膜厚度与与馈送电力方向成直角的方向均匀，由此，供给到每个纵向电极棒（2a）的高频电力可以调节梯形电极（2），并且可以调整基板的右侧或左侧的电压分布以及中心部分的电压分布可以通过将来自两个电源的具有相同频率的高频电力的流提供给梯子，从而通过提高膜馈送电力方向上的膜厚分布的均匀性来平衡基板形状的电极（2），其中高频电功率之间的相位差随时间变化。

6. 发明申请

US20050255255A1 Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus 有权
标题翻译：用于等离子体化学气相沉积装置的用于在大表面积上产生均匀的高频等离子体的方法和装置
公开(公告)号：US20050255255A1
公开(公告)日：2005-11-17
申请号：US10494528
申请日：2002-10-29
申请人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
发明人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
IPC分类号： C23C16/509 , H01J37/32 , H05H1/24 , C23C16/00
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082
摘要： This invention relates a plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. The present invention installs a first and a second power supply section on both ends of the discharge electrode installed in plasma chemical vapor deposition apparatus, which are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.
摘要翻译：本发明涉及一种等离子体生成装置，其用于通过安装在等离子体化学气相沉积装置中的非常高频（VHF）在大面积上均匀地产生等离子体。本发明在安装在等离子体化学气相沉积装置中的放电电极的两端安装第一和第二电源部分，该等离子体化学气相沉积装置被提供有交替的周期：第一和第二电源部分接收高频波相同的频率，以及接收不同的高频波的第二周期。以这种方式，等离子体产生的状态可以在每个周期中变化，并且当随时间平均时，使得在大的表面积上等离子体产生是均匀的。

7. 发明授权

US07205034B2 Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus 有权
标题翻译：用于等离子体化学气相沉积装置的用于在大表面积上产生均匀的高频等离子体的方法和装置
公开(公告)号：US07205034B2
公开(公告)日：2007-04-17
申请号：US10494528
申请日：2002-10-29
申请人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
发明人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
IPC分类号： H05H1/24
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082
摘要： A plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. A first and a second power supply section are installed on both ends of the discharge electrode installed in a plasma chemical vapor deposition apparatus, and are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.
摘要翻译：一种等离子体产生装置，其通过安装在等离子体化学气相沉积装置中的非常高频（VHF）在大面积上均匀地产生等离子体。第一和第二电源部安装在安装在等离子体化学气相沉积装置中的放电电极的两端，并且被提供有交替的周期：第一周期，其中第一和第二电源部分接收高频相同的频率，以及接收不同的高频波的第二周期。以这种方式，等离子体产生的状态可以在每个周期中变化，并且当随时间平均时，使得在大的表面积上等离子体产生是均匀的。

8. 发明授权

US07319295B2 High-frequency power supply structure and plasma CVD device using the same 失效
标题翻译：高频电源结构和等离子体CVD装置使用相同
公开(公告)号：US07319295B2
公开(公告)日：2008-01-15
申请号：US10506544
申请日：2003-03-13
申请人： Hiroshi Mashima , Keisuke Kawamura , Akemi Takano , Yoshiaki Takeuchi , Tetsuro Shigemizu , Tatsufumi Aoi
发明人： Hiroshi Mashima , Keisuke Kawamura , Akemi Takano , Yoshiaki Takeuchi , Tetsuro Shigemizu , Tatsufumi Aoi
IPC分类号： H01J7/24
CPC分类号： H01J37/32577 , H01J37/32082
摘要： A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.
摘要翻译：提供射频电源结构和包括该射频电源结构的等离子体CVD装置，其中RF电缆连接到电极的连接部分处的射频功率的反射减小，使得射频功率进入电极的入射增加。在通过对具有射频功率的板状电极进行充电来生成等离子体的装置的射频电源结构中，射频电源结构从RF电缆向射频电源供给射频电力，RF电缆为位于由电极形成的平面的延伸平面上，以在设置在电极的端部周边部分上的连接部分处连接到电极。 RF电缆基本上在与电极形成的平面相同的平面中连接到电极。在连接部分之后作用的电压相对于由电极和电力线形成的平面对称也变为对称。由此，连接部的阻抗变化减小，连接部处的射频功率的反射减小，电极的射频功率的增加，成膜和表面处理的效率提高。

9. 发明申请

US20050127844A1 High-frequency power supply structure and plasma cvd device using the same 失效
标题翻译：高频电源结构和等离子cvd设备使用相同
公开(公告)号：US20050127844A1
公开(公告)日：2005-06-16
申请号：US10506544
申请日：2003-03-13
申请人： Hiroshi Mashima , Keisuke Kawamura , Akemi Takano , Yoshiaki Takeuchi , Tetsuro Shigemizu , Tatsufumi Aoi
发明人： Hiroshi Mashima , Keisuke Kawamura , Akemi Takano , Yoshiaki Takeuchi , Tetsuro Shigemizu , Tatsufumi Aoi
IPC分类号： C23C16/509 , H01J37/32 , H01L21/205 , H01J7/24
CPC分类号： H01J37/32577 , H01J37/32082
摘要： A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.
摘要翻译：提供射频电源结构和包括该射频电源结构的等离子体CVD装置，其中RF电缆连接到电极的连接部分处的射频功率的反射减小，使得射频功率进入电极的入射增加。在通过对具有射频功率的板状电极进行充电来生成等离子体的装置的射频电源结构中，射频电源结构从RF电缆向射频电源供给射频电力，RF电缆为位于由电极形成的平面的延伸平面上，以在设置在电极的端部周边部分上的连接部分处连接到电极。 RF电缆基本上在与电极形成的平面相同的平面中连接到电极。在连接部分之后作用的电压相对于由电极和电力线形成的平面对称也变为对称。由此，连接部的阻抗变化减小，连接部处的射频功率的反射减小，电极的射频功率的增加，成膜和表面处理的效率提高。

10. 发明授权

US08931432B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US08931432B2
公开(公告)日：2015-01-13
申请号：US12309634
申请日：2008-02-18
申请人： Keisuke Kawamura , Hiroshi Mashima
发明人： Keisuke Kawamura , Hiroshi Mashima
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , C23C16/509 , C23C16/24 , H01J37/32 , H01L21/02
CPC分类号： C23C16/509 , C23C16/24 , H01J37/32091 , H01J37/32183 , H01L21/02532 , H01L21/0262
摘要： A vacuum processing apparatus is provided, in which a deposition characteristic is easily adjusted, and occurrence of difference in deposition characteristic between deposition chambers can be suppressed, and reduction in equipment cost can be achieved, and a deposition method using the vacuum processing apparatus is provided. The vacuum processing apparatus is characterized by having a plurality of discharge electrodes (3a to 3h) that are supplied with high-frequency power from a power supply unit (17a) through both ends (53) thereof, and form plasma with respect to a substrate (8) respectively, and a plurality of matching boxes (3a to 3ht) which tune phases and amplitudes of the high-frequency power supplied to the plurality of discharge electrodes (3a to 3h) at the ends (53) respectively; wherein impedance of the plurality of matching boxes (3a to 3ht) are set to approximately the same value, and the impedance value is a value at which reflected power is approximately minimized, the reflected power being returned to the power supply unit (17a) from one discharge electrode among the plurality of discharge electrodes (3a to 3h).
摘要翻译：提供了一种真空处理装置，其中容易调节沉积特性，并且可以抑制沉积室之间的沉积特性的差异的发生，并且可以实现设备成本的降低，并且提供使用真空处理装置的沉积方法。该真空处理装置的特征在于具有从供电单元（17a）经过其两端（53）供给高频电力的多个放电电极（3a〜3h），并相对于基板形成等离子体（8），以及多个匹配箱（3a〜3ht），分别调整在端部（53）处提供给多个放电电极（3a〜3h）的高频电力的相位和幅度; 其中所述多个匹配箱（3a至3ht）的阻抗被设置为大致相同的值，并且所述阻抗值是反射功率近似最小化的值，所述反射功率从所述反馈功率返回到所述电源单元（17a）多个放电电极（3a〜3h）中的一个放电电极。

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