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1. 发明授权

US07220995B2 Substrate for electronic device, electronic device and methods of manufacturing same 有权
标题翻译：电子设备基板，电子设备及其制造方法
公开(公告)号：US07220995B2
公开(公告)日：2007-05-22
申请号：US10817907
申请日：2004-04-06
申请人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe
发明人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe
IPC分类号： H01L27/15
CPC分类号： H03H9/175 , B06B1/0644 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/176
摘要： A substrate for an electronic device comprises a base, an adhesion film stacked on the base, and a conductor film stacked on the adhesion film. The adhesion film is a non-epitaxial film including a crystal having a wurtzite crystal structure. The electronic device comprises the substrate and a functional film having a specific function and disposed on the substrate.
摘要翻译：电子器件用基板包括基材，层叠在基材上的粘合膜和层叠在粘合膜上的导体膜。粘附膜是包括具有纤锌矿晶体结构的晶体的非外延膜。电子装置包括基板和具有特定功能的功能膜并且设置在基板上。

2. 发明申请

US20050029629A1 Substrate for electronic device, electronic device and methods of manufacturing same 有权
标题翻译：电子设备基板，电子设备及其制造方法
公开(公告)号：US20050029629A1
公开(公告)日：2005-02-10
申请号：US10817907
申请日：2004-04-06
申请人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe
发明人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe
IPC分类号： H01L21/28 , B06B1/06 , H01L21/283 , H01L21/8246 , H01L27/105 , H01L41/09 , H01L41/187 , H01L41/22 , H01L41/29 , H01L41/319 , H03H3/02 , H03H9/02 , H03H9/17 , H01L29/00 , H01L21/44 , B05D3/06 , H01L31/036 , H01L21/4763
CPC分类号： H03H9/175 , B06B1/0644 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/176
摘要： A substrate for an electronic device comprises a base, an adhesion film stacked on the base, and a conductor film stacked on the adhesion film. The adhesion film is a non-epitaxial film including a crystal having a wurtzite crystal structure. The electronic device comprises the substrate and a functional film having a specific function and disposed on the substrate.
摘要翻译：电子器件用基板包括基材，层叠在基材上的粘合膜和层叠在粘合膜上的导体膜。粘附膜是包括具有纤锌矿晶体结构的晶体的非外延膜。电子装置包括基板和具有特定功能的功能膜并且设置在基板上。

3. 发明授权

US06855996B2 Electronic device substrate structure and electronic device 有权
标题翻译：电子器件基板结构和电子器件
公开(公告)号：US06855996B2
公开(公告)日：2005-02-15
申请号：US10650764
申请日：2003-08-29
申请人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe , Yoshinari Yamashita
发明人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe , Yoshinari Yamashita
IPC分类号： C30B29/68 , H01L21/20 , H01L21/285 , H01L21/3205 , H01L21/365 , H01L29/04 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/316 , H01L41/319 , H01L41/39 , H03H3/02 , H03H9/17 , H01S3/19
CPC分类号： H03H3/02 , H01L21/02381 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/02554 , H01L21/02609 , H01L21/2855 , H01L21/32051 , H01L29/045 , H01L41/0477 , H01L41/0815 , H01L41/29 , H01L41/316 , H01L41/319 , H01L2224/48091 , H03H9/02015 , H03H9/02133 , H03H9/174 , H03H9/176 , H01L2924/00014
摘要： An electronic device substrate structure including a substrate 2, a metal thin film 4 as a (111)-oriented film of a face-centered cubic structure or as a (0001)-oriented film of a hexagonal closest packed structure formed on the substrate 2, and a wurtzite type thin film 5 as a (0001)-oriented film of a wurtzite crystal structure formed on the metal thin film 4, wherein: each of the two thin films is a polycrystalline film containing at least two kinds of crystal grains different in direction of crystal orientation in the plane; when the metal thin film 4 is a (111)-oriented film, axes in the plane of the wurtzite type thin film 5 are parallel to axes in the plane of the metal thin film 4; and when the metal thin film 4 is a (0001)-oriented film, axes in the plane of the wurtzite type thin film 5 are parallel to axes in the plane of the metal thin film 4.
摘要翻译：一种电子器件基板结构，其包括基板2，作为面心立方结构的（111）取向膜的金属薄膜4或形成在基板2上的作为（0001）取向的六方孔密堆积结构的膜，以及形成在金属薄膜4上的纤锌矿晶体结构的（0001）取向膜的纤锌矿型薄膜5，其中：两个薄膜中的每一个是含有至少两种不同晶粒的多晶薄膜在平面中的晶体取向方向; 当金属薄膜4为（111）取向膜时，纤锌矿型薄膜5的平面中的<11-20>轴在金属薄膜4的平面上平行于<1-10>轴; 并且当金属薄膜4为（0001）取向膜时，纤锌矿型薄膜5的平面内的<11-20>轴在金属薄膜4的平面上平行于<11-20> 。

4. 发明授权

US06259187B1 Piezoelectric bulk acoustic wave device 有权
标题翻译：压电体波器件
公开(公告)号：US06259187B1
公开(公告)日：2001-07-10
申请号：US09472806
申请日：1999-12-28
申请人： Hidenori Abe , Hisatoshi Saitou
发明人： Hidenori Abe , Hisatoshi Saitou
IPC分类号： H03H925
CPC分类号： H03H9/174 , H03H9/177
摘要： An object of the invention is to provide a piezoelectric bulk acoustic wave device having a high effective electromechanical coupling constant and allowing a fractional bandwidth to be broadened when applied to a filter and a normalized frequency variable width to be broadened when applied to an oscillator. Another object of the invention is to provide a miniature piezoelectric bulk acoustic wave device capable of operating at a high frequency of several hundreds of megahertz while maintaining a high electromechanical coupling constant. The piezoelectric bulk acoustic wave device includes a piezoelectric substrate constructed of a single crystal or oriented crystal body of potassium niobate and having a pair of major surfaces, and at least one pair of opposed electrodes formed on the major surfaces of the piezoelectric substrate, respectively, wherein the device utilizes thickness vibration propagating along the major surfaces.
摘要翻译：本发明的目的是提供一种具有高有效机电耦合常数的压电体声波器件，并且当施加到滤波器时允许分数带宽变宽，并且当应用于振荡器时，可以使归一化的频率可变宽度变宽。本发明的另一个目的是提供一种能够在保持高机电耦合常数的同时以几百兆赫兹的高频率工作的微型压电体声波器件。压电体振子装置包括由铌酸钾的单晶或取向晶体构成并具有一对主表面的压电基片和分别形成在压电基板的主表面上的至少一对相对电极，其中该装置利用沿主表面传播的厚度振动。

5. 发明授权

US06989723B2 Piezoelectric resonant filter and duplexer 有权
标题翻译：压电谐振滤波器和双工器
公开(公告)号：US06989723B2
公开(公告)日：2006-01-24
申请号：US10731157
申请日：2003-12-10
申请人： Eiju Komuro , Hisatoshi Saitou , Takao Noguchi , Hidenori Abe
发明人： Eiju Komuro , Hisatoshi Saitou , Takao Noguchi , Hidenori Abe
IPC分类号： H03H9/54 , H03H9/70
CPC分类号： H03H9/175 , H03H3/04 , H03H9/02102 , H03H9/02149 , H03H9/174 , H03H9/605 , H03H9/706 , H03H2003/0407
摘要： A piezoelectric resonant filter includes a group of series resonators and a group of parallel resonators for forming a ladder-type filter circuit. Each of the resonators has a piezoelectric thin film having piezoelectric characteristic, and lower and upper electrodes disposed on opposite surfaces of the piezoelectric thin film for applying an excitation voltage to the piezoelectric thin film. The group of the parallel resonators exhibits a low frequency side attenuation extremum in the filter whereas the group of the series resonators exhibits a high frequency side attenuation extremum in the filter. At least one of the group of the series resonators and the group of the parallel resonators has a temperature compensating layer for bringing the temperature coefficient of the resonant frequency close to zero.
摘要翻译：压电谐振滤波器包括一组串联谐振器和一组用于形成梯形滤波器电路的并联谐振器。每个谐振器具有压电薄膜，压电薄膜具有压电薄膜，并且压电薄膜的相对表面上设置有用于向压电薄膜施加激励电压的下电极和上电极。并联谐振器组在滤波器中表现出低频侧衰减极值，而串联谐振器组在滤波器中表现出高频侧衰减极值。串联谐振器组和并联谐振器组中的至少一个具有用于使共振频率的温度系数接近零的温度补偿层。

6. 发明授权

US06709776B2 Multilayer thin film and its fabrication process as well as electron device 有权
标题翻译：多层薄膜及其制造工艺以及电子器件
公开(公告)号：US06709776B2
公开(公告)日：2004-03-23
申请号：US09842805
申请日：2001-04-27
申请人： Takao Noguchi , Yoshihiko Yano , Hisatoshi Saitou , Hidenori Abe
发明人： Takao Noguchi , Yoshihiko Yano , Hisatoshi Saitou , Hidenori Abe
IPC分类号： B32B900
CPC分类号： C30B23/02 , C30B25/02 , C30B29/22 , Y10T428/2495
摘要： The invention has for its objects to provide a multilayer thin film comprising a ferroelectric thin film preferentially (001) oriented on an Si substrate, its fabrication process, and an electron device. To attain these object, the invention provides a multilayer thin film formed on a substrate by epitaxial growth, which comprises a buffer layer comprising an oxide and a ferroelectric thin film, with a metal thin film and an oxide thin film formed in this order between the buffer layer and the ferroelectric thin film, its fabrication process, and an electron device.
摘要翻译：本发明的目的是提供一种多层薄膜，其包括在Si衬底上取向的优先（001）铁电薄膜，其制造工艺和电子器件。为了实现这些目的，本发明提供了一种通过外延生长在基板上形成的多层薄膜，其包括由氧化物和铁电薄膜构成的缓冲层，金属薄膜和氧化物薄膜之间依次形成缓冲层和铁电薄膜，其制造工艺和电子器件。

7. 发明授权

US06198208B1 Thin film piezoelectric device 有权
标题翻译：薄膜压电元件
公开(公告)号：US06198208B1
公开(公告)日：2001-03-06
申请号：US09558586
申请日：2000-04-26
申请人： Yoshihiko Yano , Takao Noguchi , Hidenori Abe , Hisatoshi Saitou
发明人： Yoshihiko Yano , Takao Noguchi , Hidenori Abe , Hisatoshi Saitou
IPC分类号： H01L4104
CPC分类号： H03H9/176 , H01L41/1876 , H01L41/316 , H03H3/04 , H03H9/0211 , H03H9/174 , Y10T428/3171
摘要： A thin film piezoelectric device has an epitaxial metal thin film (4) on a silicon substrate (2) and a PZT thin film (5) on the metal thin film, the PZT thin film (5) having a Ti/(Ti+Zr) atomic ratio between 0.65 and 0.90. A film bulk acoustic resonator having an extremely broad band is realized.
摘要翻译：薄膜压电元件在金属薄膜上的硅衬底（2）和PZT薄膜（5）上具有外延金属薄膜（4），PZT薄膜（5）具有Ti /（Ti + Zr ）原子比在0.65和0.90之间。实现了具有极宽带的薄膜体声波谐振器。

8. 发明授权

US5877661A Surface acoustic wave filter with optimally sized gaps between transducers 失效
标题翻译：表面声波滤波器，在传感器之间具有最佳尺寸的间隙
公开(公告)号：US5877661A
公开(公告)日：1999-03-02
申请号：US737372
申请日：1997-06-17
申请人： Masashi Ohmura , Hiroshi Honmo , Hidenori Abe
发明人： Masashi Ohmura , Hiroshi Honmo , Hidenori Abe
IPC分类号： H03H9/00 , H03H9/64
CPC分类号： H03H9/0028 , H03H9/6433 , H03H9/6469
摘要： A surface acoustic wave filter comprises a first electrode structure array which is formed on the piezoelectric substrate, and includes an input/output IDT, two receipt IDTs formed outside the input/output IDT and two reflectors formed outside the two receipt IDTs, and a second electrode structure array which is formed on the piezoelectric substrate and includes an input/output IDT, two receipt IDTs formed outside the input/output IDT and two reflectors formed outside the two receipt IDTs, which are concatenated with each other. In a case that the surface acoustic wave filter is represented by a symmetrical lattice-type circuit which is expressed by a serial arm impedance and a parallel arm impedance and is electrically equivalent to the same, at least two resonances of the serial arm impedance and at least three resonances of the parallel arm impedance are used to form a passband. The surface acoustic wave filter can have wide bands and low spurious signal.
摘要翻译： PCT No.PCT / JP96 / 00691 Sec。 371日期：1997年6月17日 102（e）日期1997年6月17日PCT 1996年3月15日PCT公布。公开号WO96 / 28886 日期1996年9月19日一种表面声波滤波器，包括形成在压电基板上的第一电极结构阵列，并且包括输入/输出IDT，形成在输入/输出IDT外部的两个接收IDT，以及形成在两个接收之外的两个反射器 IDT，以及形成在压电基板上并包括输入/输出IDT，形成在输入/输出IDT外部的两个接收IDT和形成在两个接收IDT之外的两个反射器的第二电极结构阵列，它们彼此并联。在表面声波滤波器由以串联臂阻抗和并联臂阻抗表示的并且与之相当的对称晶格型电路表示的情况下，串联臂阻抗和串联臂阻抗的至少两个谐振使用并联臂阻抗的至少三个谐振来形成通带。表面声波滤波器可以具有宽带和低杂散信号。

9. 发明授权

US5840732A Imidazopyridine or imidazopyrimidine compounds, their production and use 失效
标题翻译：咪唑并吡啶或咪唑并嘧啶化合物，其生产和使用
公开(公告)号：US5840732A
公开(公告)日：1998-11-24
申请号：US481391
申请日：1996-12-06
申请人： Muneo Takatani , Hitoshi Ikeda , Kyoko Iida , Hidenori Abe
发明人： Muneo Takatani , Hitoshi Ikeda , Kyoko Iida , Hidenori Abe
IPC分类号： C07D471/04 , C07D487/04 , C07D519/00 , A61K31/44 , A61K31/505 , C07D239/72 , C07D405/00 , C07D409/00
CPC分类号： C07D471/04 , C07D487/04
摘要： This invention provides a new condensed imidazole compound possessing inhibitory activity of adhesion molecule expression. This invention also provides a therapeutic and prophylactic agent for diabetic nephritis and/or autoimmune disease and an immunosuppressor for organ transplantation.
摘要翻译： PCT No.PCT / JP95 / 01192 Sec。 371日期1996年12月6日第 102（e）日期1996年12月6日PCT归档1995年6月15日PCT公布。公开号WO95 / 35296 日期：1995年12月28日本发明提供了具有粘附分子表达抑制活性的新的缩合咪唑化合物。本发明还提供了用于糖尿病性肾炎和/或自身免疫性疾病的治疗和预防剂以及用于器官移植的免疫抑制剂。

10. 发明授权

US09809872B2 Dilute copper alloy material, dilute copper alloy wire, dilute copper alloy twisted wire and cable using the same, coaxial cable and composite cable, and method of manufacturing dilute copper alloy material and dilute copper alloy wire 有权
公开(公告)号：US09809872B2
公开(公告)日：2017-11-07
申请号：US12756551
申请日：2010-04-08
申请人： Seigi Aoyama , Toru Sumi , Shuji Sakai , Takahiro Sato , Hidenori Abe
发明人： Seigi Aoyama , Toru Sumi , Shuji Sakai , Takahiro Sato , Hidenori Abe
IPC分类号： C22C9/00 , B22D11/00 , H01B1/02 , C22F1/08 , B22D21/02
CPC分类号： C22C9/00 , B22D21/025 , C22F1/08 , H01B1/026
摘要： A dilute copper alloy material includes, based on a total mass of the dilute copper alloy material, 2 to 12 mass ppm of sulfur, 2 to 30 mass ppm of oxygen, 4 to 55 mass ppm of titanium, and a balance of pure copper and inevitable impurity. A part of the sulfur and the titanium forms a compound or an aggregate of TiO, TiO2, TiS or Ti—O—S, and an other part of the sulfur and the titanium forms a solid solution. TiO, TiO2, TiS and Ti—O—S distributed in a crystal grain of the dilute copper alloy material are not more than 200 nm, not more than 1000 nm, not more than 200 nm and not more than 300 nm, respectively, in particle size thereof, and not less than 90% of particles distributed in a crystal grain of the dilute copper alloy material are 500 nm or less in particle size.

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