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1. 发明授权

US06989723B2 Piezoelectric resonant filter and duplexer 有权
标题翻译：压电谐振滤波器和双工器
公开(公告)号：US06989723B2
公开(公告)日：2006-01-24
申请号：US10731157
申请日：2003-12-10
申请人： Eiju Komuro , Hisatoshi Saitou , Takao Noguchi , Hidenori Abe
发明人： Eiju Komuro , Hisatoshi Saitou , Takao Noguchi , Hidenori Abe
IPC分类号： H03H9/54 , H03H9/70
CPC分类号： H03H9/175 , H03H3/04 , H03H9/02102 , H03H9/02149 , H03H9/174 , H03H9/605 , H03H9/706 , H03H2003/0407
摘要： A piezoelectric resonant filter includes a group of series resonators and a group of parallel resonators for forming a ladder-type filter circuit. Each of the resonators has a piezoelectric thin film having piezoelectric characteristic, and lower and upper electrodes disposed on opposite surfaces of the piezoelectric thin film for applying an excitation voltage to the piezoelectric thin film. The group of the parallel resonators exhibits a low frequency side attenuation extremum in the filter whereas the group of the series resonators exhibits a high frequency side attenuation extremum in the filter. At least one of the group of the series resonators and the group of the parallel resonators has a temperature compensating layer for bringing the temperature coefficient of the resonant frequency close to zero.
摘要翻译：压电谐振滤波器包括一组串联谐振器和一组用于形成梯形滤波器电路的并联谐振器。每个谐振器具有压电薄膜，压电薄膜具有压电薄膜，并且压电薄膜的相对表面上设置有用于向压电薄膜施加激励电压的下电极和上电极。并联谐振器组在滤波器中表现出低频侧衰减极值，而串联谐振器组在滤波器中表现出高频侧衰减极值。串联谐振器组和并联谐振器组中的至少一个具有用于使共振频率的温度系数接近零的温度补偿层。

2. 发明授权

US07239067B2 Method of manufacturing a piezoelectric thin film resonator, manufacturing apparatus for a piezoelectric thin film resonator, piezoelectric thin film resonator, and electronic component 有权
标题翻译：压电薄膜谐振器的制造方法，压电薄膜谐振器的制造装置，压电薄膜谐振器和电子部件
公开(公告)号：US07239067B2
公开(公告)日：2007-07-03
申请号：US10811812
申请日：2004-03-30
申请人： Eiju Komuro , Hisatoshi Saitou , Takao Noguchi , Masaaki Imura
发明人： Eiju Komuro , Hisatoshi Saitou , Takao Noguchi , Masaaki Imura
IPC分类号： H01L41/00 , H02N2/00 , H01B13/00
CPC分类号： H03H9/564 , H03H3/02
摘要： A method of manufacturing a piezoelectric thin film resonator forms, after forming a piezoelectric film on a substrate so as to cover a lower electrode formed on the substrate, an electrode material layer for forming an upper electrode above the piezoelectric film, forms a mask of a predetermined form on the electrode material layer, and then etches the electrode material layer to form the upper electrode. Before a step of forming the electrode material layer, a protective layer for protecting the piezoelectric film during etching of the electrode material layer is formed so as to cover at least a part of the piezoelectric film where the upper electrode is not formed, and the electrode material layer is then formed so as to cover the protective layer.
摘要翻译：一种制造压电薄膜谐振器的方法，在基板上形成压电膜以覆盖形成在基板上的下电极之后，形成用于在压电膜上形成上电极的电极材料层，形成在电极材料层上形成预定形状，然后蚀刻电极材料层以形成上部电极。在形成电极材料层的步骤之前，形成用于在蚀刻电极材料层期间保护压电膜的保护层，以覆盖不形成上部电极的压电膜的至少一部分，并且电极然后形成材料层以覆盖保护层。

3. 发明授权

US07220995B2 Substrate for electronic device, electronic device and methods of manufacturing same 有权
标题翻译：电子设备基板，电子设备及其制造方法
公开(公告)号：US07220995B2
公开(公告)日：2007-05-22
申请号：US10817907
申请日：2004-04-06
申请人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe
发明人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe
IPC分类号： H01L27/15
CPC分类号： H03H9/175 , B06B1/0644 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/176
摘要： A substrate for an electronic device comprises a base, an adhesion film stacked on the base, and a conductor film stacked on the adhesion film. The adhesion film is a non-epitaxial film including a crystal having a wurtzite crystal structure. The electronic device comprises the substrate and a functional film having a specific function and disposed on the substrate.
摘要翻译：电子器件用基板包括基材，层叠在基材上的粘合膜和层叠在粘合膜上的导体膜。粘附膜是包括具有纤锌矿晶体结构的晶体的非外延膜。电子装置包括基板和具有特定功能的功能膜并且设置在基板上。

4. 发明申请

US20050029629A1 Substrate for electronic device, electronic device and methods of manufacturing same 有权
标题翻译：电子设备基板，电子设备及其制造方法
公开(公告)号：US20050029629A1
公开(公告)日：2005-02-10
申请号：US10817907
申请日：2004-04-06
申请人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe
发明人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe
IPC分类号： H01L21/28 , B06B1/06 , H01L21/283 , H01L21/8246 , H01L27/105 , H01L41/09 , H01L41/187 , H01L41/22 , H01L41/29 , H01L41/319 , H03H3/02 , H03H9/02 , H03H9/17 , H01L29/00 , H01L21/44 , B05D3/06 , H01L31/036 , H01L21/4763
CPC分类号： H03H9/175 , B06B1/0644 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/176
摘要： A substrate for an electronic device comprises a base, an adhesion film stacked on the base, and a conductor film stacked on the adhesion film. The adhesion film is a non-epitaxial film including a crystal having a wurtzite crystal structure. The electronic device comprises the substrate and a functional film having a specific function and disposed on the substrate.
摘要翻译：电子器件用基板包括基材，层叠在基材上的粘合膜和层叠在粘合膜上的导体膜。粘附膜是包括具有纤锌矿晶体结构的晶体的非外延膜。电子装置包括基板和具有特定功能的功能膜并且设置在基板上。

5. 发明授权

US06709776B2 Multilayer thin film and its fabrication process as well as electron device 有权
标题翻译：多层薄膜及其制造工艺以及电子器件
公开(公告)号：US06709776B2
公开(公告)日：2004-03-23
申请号：US09842805
申请日：2001-04-27
申请人： Takao Noguchi , Yoshihiko Yano , Hisatoshi Saitou , Hidenori Abe
发明人： Takao Noguchi , Yoshihiko Yano , Hisatoshi Saitou , Hidenori Abe
IPC分类号： B32B900
CPC分类号： C30B23/02 , C30B25/02 , C30B29/22 , Y10T428/2495
摘要： The invention has for its objects to provide a multilayer thin film comprising a ferroelectric thin film preferentially (001) oriented on an Si substrate, its fabrication process, and an electron device. To attain these object, the invention provides a multilayer thin film formed on a substrate by epitaxial growth, which comprises a buffer layer comprising an oxide and a ferroelectric thin film, with a metal thin film and an oxide thin film formed in this order between the buffer layer and the ferroelectric thin film, its fabrication process, and an electron device.
摘要翻译：本发明的目的是提供一种多层薄膜，其包括在Si衬底上取向的优先（001）铁电薄膜，其制造工艺和电子器件。为了实现这些目的，本发明提供了一种通过外延生长在基板上形成的多层薄膜，其包括由氧化物和铁电薄膜构成的缓冲层，金属薄膜和氧化物薄膜之间依次形成缓冲层和铁电薄膜，其制造工艺和电子器件。

6. 发明授权

US06198208B1 Thin film piezoelectric device 有权
标题翻译：薄膜压电元件
公开(公告)号：US06198208B1
公开(公告)日：2001-03-06
申请号：US09558586
申请日：2000-04-26
申请人： Yoshihiko Yano , Takao Noguchi , Hidenori Abe , Hisatoshi Saitou
发明人： Yoshihiko Yano , Takao Noguchi , Hidenori Abe , Hisatoshi Saitou
IPC分类号： H01L4104
CPC分类号： H03H9/176 , H01L41/1876 , H01L41/316 , H03H3/04 , H03H9/0211 , H03H9/174 , Y10T428/3171
摘要： A thin film piezoelectric device has an epitaxial metal thin film (4) on a silicon substrate (2) and a PZT thin film (5) on the metal thin film, the PZT thin film (5) having a Ti/(Ti+Zr) atomic ratio between 0.65 and 0.90. A film bulk acoustic resonator having an extremely broad band is realized.
摘要翻译：薄膜压电元件在金属薄膜上的硅衬底（2）和PZT薄膜（5）上具有外延金属薄膜（4），PZT薄膜（5）具有Ti /（Ti + Zr ）原子比在0.65和0.90之间。实现了具有极宽带的薄膜体声波谐振器。

7. 发明授权

US06855996B2 Electronic device substrate structure and electronic device 有权
标题翻译：电子器件基板结构和电子器件
公开(公告)号：US06855996B2
公开(公告)日：2005-02-15
申请号：US10650764
申请日：2003-08-29
申请人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe , Yoshinari Yamashita
发明人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe , Yoshinari Yamashita
IPC分类号： C30B29/68 , H01L21/20 , H01L21/285 , H01L21/3205 , H01L21/365 , H01L29/04 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/316 , H01L41/319 , H01L41/39 , H03H3/02 , H03H9/17 , H01S3/19
CPC分类号： H03H3/02 , H01L21/02381 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/02554 , H01L21/02609 , H01L21/2855 , H01L21/32051 , H01L29/045 , H01L41/0477 , H01L41/0815 , H01L41/29 , H01L41/316 , H01L41/319 , H01L2224/48091 , H03H9/02015 , H03H9/02133 , H03H9/174 , H03H9/176 , H01L2924/00014
摘要： An electronic device substrate structure including a substrate 2, a metal thin film 4 as a (111)-oriented film of a face-centered cubic structure or as a (0001)-oriented film of a hexagonal closest packed structure formed on the substrate 2, and a wurtzite type thin film 5 as a (0001)-oriented film of a wurtzite crystal structure formed on the metal thin film 4, wherein: each of the two thin films is a polycrystalline film containing at least two kinds of crystal grains different in direction of crystal orientation in the plane; when the metal thin film 4 is a (111)-oriented film, axes in the plane of the wurtzite type thin film 5 are parallel to axes in the plane of the metal thin film 4; and when the metal thin film 4 is a (0001)-oriented film, axes in the plane of the wurtzite type thin film 5 are parallel to axes in the plane of the metal thin film 4.
摘要翻译：一种电子器件基板结构，其包括基板2，作为面心立方结构的（111）取向膜的金属薄膜4或形成在基板2上的作为（0001）取向的六方孔密堆积结构的膜，以及形成在金属薄膜4上的纤锌矿晶体结构的（0001）取向膜的纤锌矿型薄膜5，其中：两个薄膜中的每一个是含有至少两种不同晶粒的多晶薄膜在平面中的晶体取向方向; 当金属薄膜4为（111）取向膜时，纤锌矿型薄膜5的平面中的<11-20>轴在金属薄膜4的平面上平行于<1-10>轴; 并且当金属薄膜4为（0001）取向膜时，纤锌矿型薄膜5的平面内的<11-20>轴在金属薄膜4的平面上平行于<11-20> 。

8. 发明授权

US08166815B2 Angular velocity sensor element 有权
标题翻译：角速度传感器元件
公开(公告)号：US08166815B2
公开(公告)日：2012-05-01
申请号：US12382274
申请日：2009-03-12
申请人： Kenichi Tochi , Takao Noguchi , Ken Unno , Kazuya Maekawa
发明人： Kenichi Tochi , Takao Noguchi , Ken Unno , Kazuya Maekawa
IPC分类号： G01C19/56
CPC分类号： G01C19/5642
摘要： An angular velocity sensor element is provided which is capable of preventing even transmission of sudden externally-applied vibration to an element portion by absorbing the vibration. An angular velocity sensor element 2 according to the present embodiment has a fixing portion 21 in the form of a frame, an element portion 20 disposed in the frame of the fixing portion 21 and having vibrating arms 21 to 24 in a drive system and a detection system, and a connecting portion 25 formed as a fixed-fixed beam having its both ends connected to the fixing portion 21 and having its intermediate portion connected to the element portion 20.
摘要翻译：提供一种角速度传感器元件，其能够通过吸收振动来防止突然的外部施加的振动到元件部分的传播。根据本实施例的角速度传感器元件2具有框架形式的固定部分21，设置在固定部分21的框架中并且在驱动系统中具有振动臂21至24的元件部分20和检测系统，以及形成为固定梁的连接部分25，其两端连接到固定部分21，并且其中间部分连接到元件部分20。

9. 发明授权

US08056414B2 Angular velocity sensor and angular velocity sensing device 有权
标题翻译：角速度传感器和角速度检测装置
公开(公告)号：US08056414B2
公开(公告)日：2011-11-15
申请号：US12078031
申请日：2008-03-26
申请人： Takao Noguchi , Kenichi Tochi , Ken Unno , Tatsuo Namikawa
发明人： Takao Noguchi , Kenichi Tochi , Ken Unno , Tatsuo Namikawa
IPC分类号： G01P9/04 , H01L41/00
CPC分类号： G01C19/5607
摘要： An angular velocity sensor of a horizontally located type, in which influence of a translational acceleration applied thereto from a lateral direction is readily removed and a fixed portion thereof is easily fixed, is provided. It includes a fixed portion fixed to the top surface of a sensor element supporting portion of a casing, an upper detection arm portion and a lower detection arm portion respectively connected to the fixed portion on sides opposite to each other and extending along a plane parallel to the top surface of the sensor element supporting portion, and a pair of upper vibration arms connected to the fixed portion with the upper detection arm portion in between. The fixed portion includes one or more slits extending at least in a direction intersecting with the extending direction of the upper detection arm portion.
摘要翻译：提供了一种水平定位型的角速度传感器，其中容易地去除从横向施加到其上的平移加速度的影响，并且其固定部分容易固定。它包括固定到壳体的传感器元件支撑部分的顶表面的固定部分，上检测臂部分和下检测臂部分，其分别连接到彼此相对的侧面上的固定部分，并且沿平行于传感器元件支撑部分的顶表面和连接到固定部分的上部振动臂，上部检测臂部分在其间。固定部分包括至少沿与上检测臂部分的延伸方向交叉的方向延伸的一个或多个狭缝。

10. 发明申请

US20090165556A1 Angular velocity sensing element 有权
标题翻译：角速度感测元件
公开(公告)号：US20090165556A1
公开(公告)日：2009-07-02
申请号：US12318329
申请日：2008-12-24
申请人： Ken Unno , Takao Noguchi , Kenichi Tochi , Kazuya Maekawa
发明人： Ken Unno , Takao Noguchi , Kenichi Tochi , Kazuya Maekawa
IPC分类号： G01C19/56
CPC分类号： G01C19/5607
摘要： An angular velocity sensing element is provided, which is able to prevent breakage of an oscillation arm even when an excessively large shock is given. An angular velocity sensing element 2 according to the present embodiment includes oscillation arms 22, 23 and 24 formed of a semiconductor material, and a stopper member provided to limit the oscillation range of the oscillation arms. As such a stopper member, a first stopper member 25 is provided, for example, which limits the oscillation range of the oscillation arms at least within a single plane of the arms. Fixing portions 21, the oscillation arms 22, 23 and 24 and the first stopper member 25 are integrally formed by processing a semiconductor material, such as silicon.
摘要翻译：提供了一种角速度感测元件，其即使在给出过大的冲击时也能够防止振动臂的破损。根据本实施例的角速度感测元件2包括由半导体材料形成的振荡臂22,23和24以及用于限制振荡臂的振荡范围的止动构件。作为这样的止动构件，例如设置有至少在臂的单个平面内限制摆动臂的摆动范围的第一止动构件25。固定部21，摆动臂22,23,24以及第一止动构件25通过加工硅等半导体材料而一体形成。

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