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1. 发明申请

US20120100390A1 Weldment and method of manufacturing the same 有权
标题翻译：焊接及其制造方法
公开(公告)号：US20120100390A1
公开(公告)日：2012-04-26
申请号：US13317463
申请日：2011-10-19
申请人： Hiromitsu Kuroda , Toru Sumi , Hideyuki Sagawa , Seigi Aoyama , Masayoshi Goto , Takahiko Hanada , Takahiro Sato , Hidenori Abe
发明人： Hiromitsu Kuroda , Toru Sumi , Hideyuki Sagawa , Seigi Aoyama , Masayoshi Goto , Takahiko Hanada , Takahiro Sato , Hidenori Abe
IPC分类号： B32B15/20 , B23K31/00
CPC分类号： C22C9/00 , B23K31/00 , B32B15/20 , C22C1/02 , C22C1/1036 , C22F1/00 , C22F1/08 , Y10T428/1266 , Y10T428/12667 , Y10T428/12882 , Y10T428/12903 , Y10T428/1291
摘要： A weldment includes metal materials that are welded to each other. At least one of the metal materials includes pure copper including an inevitable impurity, more than 2 mass ppm of oxygen, and an additive element selected from the group consisting of Mg, Zr, Nb, Fe, Si, Al, Ca, V, Ni, Mn, Ti and Cr. A method of manufacturing a weldment includes melting a dilute copper alloy material by SCR continuous casting and rolling at a molten copper temperature of not less than 1100° C. and not more than 1320° C. to make a molten metal, forming a cast bar from the molten metal, forming a dilute copper alloy member by hot-rolling the cast bar, and welding the dilute copper alloy member to a metal material. The dilute copper alloy material includes the pure copper, more than 2 mass ppm of oxygen, and the additive element,
摘要翻译：焊件包括彼此焊接的金属材料。至少一种金属材料包括包含不可避免的杂质的纯铜，大于2质量ppm的氧，以及选自Mg，Zr，Nb，Fe，Si，Al，Ca，V，Ni ，Mn，Ti和Cr。一种焊接件的制造方法，其特征在于，以不低于1100℃，不高于1320℃的熔融铜温度，通过SCR连续铸造，熔融稀释的铜合金材料，形成熔融金属从熔融金属中，通过对铸造棒进行热轧而形成稀铜合金构件，并将稀铜合金构件焊接到金属材料上。稀铜合金材料包括纯铜，大于2质量ppm的氧和添加元素，

2. 发明申请

US20060223826A1 Indole derivatives as somatostatin agonists or antagonists 审中-公开
标题翻译：吲哚衍生物作为生长抑素激动剂或拮抗剂
公开(公告)号：US20060223826A1
公开(公告)日：2006-10-05
申请号：US10534725
申请日：2003-11-18
申请人： Hidenori Abe , Shinichiro Matsunaga , Shiro Takekawa , Masanori Watanabe
发明人： Hidenori Abe , Shinichiro Matsunaga , Shiro Takekawa , Masanori Watanabe
IPC分类号： A61K31/496 , A61K31/454 , C07D403/02
CPC分类号： C07D401/12 , C07D209/20 , C07D209/42 , C07D401/14 , C07D403/12 , C07D405/12 , C07D405/14 , C07D417/12 , C07D417/14 , C07D495/04
摘要： The present invention provide a compound of the formula (I) wherein ring A represents an aromatic ring optionally having substituents; B, Y and Ya are the same or different and each represents a bond, etc.; R1 and R2 are the same or different and each represents a hydrogen atom, etc.; R3 represents a hydrogen atom, etc.; R4 and R5 are the same or different and each represents a hydrogen, etc.; R6 represents an indolyl group optionally having substituents; and Z and Za are the same or different and each represents a hydrogen atom, etc.; or a salt thereof or a prodrug thereof, having a somatostatin receptor binding inhibition activity and is useful for preventing and/or treating diseases associated with somatostatin.
摘要翻译：本发明提供式（I）的化合物，其中环A表示任选具有取代基的芳环; B，Y和Ya是相同或不同的，每个代表一个债券等; R 1和R 2相同或不同，各自表示氢原子等; R 3表示氢原子等; R 4和R 5相同或不同，各自表示氢等; R 6表示任选具有取代基的吲哚基; Z和Za相同或不同，各自表示氢原子等; 或其盐或其前药，具有生长抑素受体结合抑制活性，并且可用于预防和/或治疗与生长抑素相关的疾病。

3. 发明授权

US06989723B2 Piezoelectric resonant filter and duplexer 有权
标题翻译：压电谐振滤波器和双工器
公开(公告)号：US06989723B2
公开(公告)日：2006-01-24
申请号：US10731157
申请日：2003-12-10
申请人： Eiju Komuro , Hisatoshi Saitou , Takao Noguchi , Hidenori Abe
发明人： Eiju Komuro , Hisatoshi Saitou , Takao Noguchi , Hidenori Abe
IPC分类号： H03H9/54 , H03H9/70
CPC分类号： H03H9/175 , H03H3/04 , H03H9/02102 , H03H9/02149 , H03H9/174 , H03H9/605 , H03H9/706 , H03H2003/0407
摘要： A piezoelectric resonant filter includes a group of series resonators and a group of parallel resonators for forming a ladder-type filter circuit. Each of the resonators has a piezoelectric thin film having piezoelectric characteristic, and lower and upper electrodes disposed on opposite surfaces of the piezoelectric thin film for applying an excitation voltage to the piezoelectric thin film. The group of the parallel resonators exhibits a low frequency side attenuation extremum in the filter whereas the group of the series resonators exhibits a high frequency side attenuation extremum in the filter. At least one of the group of the series resonators and the group of the parallel resonators has a temperature compensating layer for bringing the temperature coefficient of the resonant frequency close to zero.
摘要翻译：压电谐振滤波器包括一组串联谐振器和一组用于形成梯形滤波器电路的并联谐振器。每个谐振器具有压电薄膜，压电薄膜具有压电薄膜，并且压电薄膜的相对表面上设置有用于向压电薄膜施加激励电压的下电极和上电极。并联谐振器组在滤波器中表现出低频侧衰减极值，而串联谐振器组在滤波器中表现出高频侧衰减极值。串联谐振器组和并联谐振器组中的至少一个具有用于使共振频率的温度系数接近零的温度补偿层。

4. 发明申请

US20050245571A1 Amine derivative 审中-公开
标题翻译：胺衍生物
公开(公告)号：US20050245571A1
公开(公告)日：2005-11-03
申请号：US10492420
申请日：2002-10-17
申请人： Hidenori Abe , Shizuo Kasai , Shiro Takekawa , Masanori Watanabe
发明人： Hidenori Abe , Shizuo Kasai , Shiro Takekawa , Masanori Watanabe
IPC分类号： A61K31/4709 , A61K31/4725 , A61K31/496 , A61K31/5377 , A61K31/541 , A61K31/551 , A61P3/10 , A61P43/00 , C07D401/06 , C07D401/14 , C07D43/14
CPC分类号： A61K31/496 , A61K31/4709 , A61K31/4725 , A61K31/5377 , A61K31/541 , A61K31/551 , C07D401/06 , C07D401/14
摘要： The present invention provide a compound of the formula: wherein X and X′ are the same or different and each represents a hydrogen atom, etc.; R1 and R2 are the same or different and each represents a hydrogen atom, etc.; R3 represents a hydrocarbon group optionally having substituents, etc.; R4 represents a hydrogen atom, etc.; Y and Ya are the same or different and each represents a bond or a spacer having a main chain of 1 to 8 atoms; Z and Za are the same or different and each represents a hydrogen atom, etc.; or a salt thereof or a prodrug thereof, having a somatostatin receptor binding inhibitory activity and is useful for preventing and/or treating diseases associated with somatostatin.
摘要翻译：本发明提供下式的化合物：其中X和X'相同或不同，各自表示氢原子等; R 1和R 2相同或不同，各自表示氢原子等; R 3表示任选具有取代基的烃基等; R 4表示氢原子等; Y和Ya相同或不同，各自表示键或具有1至8个原子的主链的间隔基; Z和Za相同或不同，各自表示氢原子等; 或其盐或其前药，具有生长抑素受体结合抑制活性，并且可用于预防和/或治疗与生长抑素相关的疾病。

5. 发明授权

US5585684A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US5585684A
公开(公告)日：1996-12-17
申请号：US567805
申请日：1995-12-06
申请人： Hidenori Abe
发明人： Hidenori Abe
IPC分类号： H03H9/00 , H03H9/02 , H03H9/145 , H03H9/64 , H01L41/08
CPC分类号： H03H9/02543 , H03H9/1455 , H03H9/6426
摘要： A surface acoustic wave device comprises, on a lithium tetraborate substrate 10, a central interdigital transducer 21, 31, and first and second interdigital transducers 22, 23, 32, 33 disposed adjacently on both sides of the central interdigital transducer 21, 31 in a propagation direction of surface acoustic waves, or comprises a first such row of transducers 20 and a second such row of transducers 30 connected in cascade to each other. A sum Nc+Ns of a number of the central interdigital transducer pairs Nc, and a total number of the first and second interdigital transducers pairs Ns is set at a suitable range. The surface acoustic wave device has flat group delay times, relatively wide specific band widths, small insertion losses and large attenuation outside the pass band.
摘要翻译：表面声波装置在四硼酸锂基板10上包括中央叉指式换能器21,31以及相邻设置在中央叉指式换能器21,31的两侧上的第一和第二叉指式换能器22,23,32,33，表面声波的传播方向，或者包括彼此级联连接的第一这样的换能器行20和第二排换能器30。多个中央叉指式换能器对Nc的总和Nc + Ns以及第一和第二指数间换能器对Ns的总数被设定在合适的范围。声表面波器件具有平坦的延迟时间，相对宽的特定带宽，小的插入损耗和通带外的大的衰减。

6. 发明授权

US07220995B2 Substrate for electronic device, electronic device and methods of manufacturing same 有权
标题翻译：电子设备基板，电子设备及其制造方法
公开(公告)号：US07220995B2
公开(公告)日：2007-05-22
申请号：US10817907
申请日：2004-04-06
申请人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe
发明人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe
IPC分类号： H01L27/15
CPC分类号： H03H9/175 , B06B1/0644 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/176
摘要： A substrate for an electronic device comprises a base, an adhesion film stacked on the base, and a conductor film stacked on the adhesion film. The adhesion film is a non-epitaxial film including a crystal having a wurtzite crystal structure. The electronic device comprises the substrate and a functional film having a specific function and disposed on the substrate.
摘要翻译：电子器件用基板包括基材，层叠在基材上的粘合膜和层叠在粘合膜上的导体膜。粘附膜是包括具有纤锌矿晶体结构的晶体的非外延膜。电子装置包括基板和具有特定功能的功能膜并且设置在基板上。

7. 发明申请

US20050029629A1 Substrate for electronic device, electronic device and methods of manufacturing same 有权
标题翻译：电子设备基板，电子设备及其制造方法
公开(公告)号：US20050029629A1
公开(公告)日：2005-02-10
申请号：US10817907
申请日：2004-04-06
申请人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe
发明人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe
IPC分类号： H01L21/28 , B06B1/06 , H01L21/283 , H01L21/8246 , H01L27/105 , H01L41/09 , H01L41/187 , H01L41/22 , H01L41/29 , H01L41/319 , H03H3/02 , H03H9/02 , H03H9/17 , H01L29/00 , H01L21/44 , B05D3/06 , H01L31/036 , H01L21/4763
CPC分类号： H03H9/175 , B06B1/0644 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/176
摘要： A substrate for an electronic device comprises a base, an adhesion film stacked on the base, and a conductor film stacked on the adhesion film. The adhesion film is a non-epitaxial film including a crystal having a wurtzite crystal structure. The electronic device comprises the substrate and a functional film having a specific function and disposed on the substrate.
摘要翻译：电子器件用基板包括基材，层叠在基材上的粘合膜和层叠在粘合膜上的导体膜。粘附膜是包括具有纤锌矿晶体结构的晶体的非外延膜。电子装置包括基板和具有特定功能的功能膜并且设置在基板上。

8. 发明授权

US5877661A Surface acoustic wave filter with optimally sized gaps between transducers 失效
标题翻译：表面声波滤波器，在传感器之间具有最佳尺寸的间隙
公开(公告)号：US5877661A
公开(公告)日：1999-03-02
申请号：US737372
申请日：1997-06-17
申请人： Masashi Ohmura , Hiroshi Honmo , Hidenori Abe
发明人： Masashi Ohmura , Hiroshi Honmo , Hidenori Abe
IPC分类号： H03H9/00 , H03H9/64
CPC分类号： H03H9/0028 , H03H9/6433 , H03H9/6469
摘要： A surface acoustic wave filter comprises a first electrode structure array which is formed on the piezoelectric substrate, and includes an input/output IDT, two receipt IDTs formed outside the input/output IDT and two reflectors formed outside the two receipt IDTs, and a second electrode structure array which is formed on the piezoelectric substrate and includes an input/output IDT, two receipt IDTs formed outside the input/output IDT and two reflectors formed outside the two receipt IDTs, which are concatenated with each other. In a case that the surface acoustic wave filter is represented by a symmetrical lattice-type circuit which is expressed by a serial arm impedance and a parallel arm impedance and is electrically equivalent to the same, at least two resonances of the serial arm impedance and at least three resonances of the parallel arm impedance are used to form a passband. The surface acoustic wave filter can have wide bands and low spurious signal.
摘要翻译： PCT No.PCT / JP96 / 00691 Sec。 371日期：1997年6月17日 102（e）日期1997年6月17日PCT 1996年3月15日PCT公布。公开号WO96 / 28886 日期1996年9月19日一种表面声波滤波器，包括形成在压电基板上的第一电极结构阵列，并且包括输入/输出IDT，形成在输入/输出IDT外部的两个接收IDT，以及形成在两个接收之外的两个反射器 IDT，以及形成在压电基板上并包括输入/输出IDT，形成在输入/输出IDT外部的两个接收IDT和形成在两个接收IDT之外的两个反射器的第二电极结构阵列，它们彼此并联。在表面声波滤波器由以串联臂阻抗和并联臂阻抗表示的并且与之相当的对称晶格型电路表示的情况下，串联臂阻抗和串联臂阻抗的至少两个谐振使用并联臂阻抗的至少三个谐振来形成通带。表面声波滤波器可以具有宽带和低杂散信号。

9. 发明授权

US5840732A Imidazopyridine or imidazopyrimidine compounds, their production and use 失效
标题翻译：咪唑并吡啶或咪唑并嘧啶化合物，其生产和使用
公开(公告)号：US5840732A
公开(公告)日：1998-11-24
申请号：US481391
申请日：1996-12-06
申请人： Muneo Takatani , Hitoshi Ikeda , Kyoko Iida , Hidenori Abe
发明人： Muneo Takatani , Hitoshi Ikeda , Kyoko Iida , Hidenori Abe
IPC分类号： C07D471/04 , C07D487/04 , C07D519/00 , A61K31/44 , A61K31/505 , C07D239/72 , C07D405/00 , C07D409/00
CPC分类号： C07D471/04 , C07D487/04
摘要： This invention provides a new condensed imidazole compound possessing inhibitory activity of adhesion molecule expression. This invention also provides a therapeutic and prophylactic agent for diabetic nephritis and/or autoimmune disease and an immunosuppressor for organ transplantation.
摘要翻译： PCT No.PCT / JP95 / 01192 Sec。 371日期1996年12月6日第 102（e）日期1996年12月6日PCT归档1995年6月15日PCT公布。公开号WO95 / 35296 日期：1995年12月28日本发明提供了具有粘附分子表达抑制活性的新的缩合咪唑化合物。本发明还提供了用于糖尿病性肾炎和/或自身免疫性疾病的治疗和预防剂以及用于器官移植的免疫抑制剂。

10. 发明授权

US09234263B2 Weldment 有权
标题翻译：焊接
公开(公告)号：US09234263B2
公开(公告)日：2016-01-12
申请号：US13317463
申请日：2011-10-19
申请人： Hiromitsu Kuroda , Toru Sumi , Hideyuki Sagawa , Seigi Aoyama , Masayoshi Goto , Takahiko Hanada , Takahiro Sato , Hidenori Abe
发明人： Hiromitsu Kuroda , Toru Sumi , Hideyuki Sagawa , Seigi Aoyama , Masayoshi Goto , Takahiko Hanada , Takahiro Sato , Hidenori Abe
IPC分类号： B32B15/20 , C22C9/00 , B23K31/00 , C22C1/02 , C22C1/10 , C22F1/00 , C22F1/08
CPC分类号： C22C9/00 , B23K31/00 , B32B15/20 , C22C1/02 , C22C1/1036 , C22F1/00 , C22F1/08 , Y10T428/1266 , Y10T428/12667 , Y10T428/12882 , Y10T428/12903 , Y10T428/1291
摘要： A weldment includes metal materials that are welded to each other. At least one of the metal materials includes pure copper including an inevitable impurity, more than 2 mass ppm of oxygen, and an additive element selected from the group consisting of Mg, Zr, Nb, Fe, Si, Al, Ca, V, Ni, Mn, Ti and Cr. A method of manufacturing a weldment includes melting a dilute copper alloy material by SCR continuous casting and rolling at a molten copper temperature of not less than 1100° C. and not more than 1320° C. to make a molten metal, forming a cast bar from the molten metal, forming a dilute copper alloy member by hot-rolling the cast bar, and welding the dilute copper alloy member to a metal material. The dilute copper alloy material includes the pure copper, more than 2 mass ppm of oxygen, and the additive element,?
摘要翻译：焊件包括彼此焊接的金属材料。至少一种金属材料包括包含不可避免的杂质的纯铜，大于2质量ppm的氧，以及选自Mg，Zr，Nb，Fe，Si，Al，Ca，V，Ni ，Mn，Ti和Cr。一种焊接件的制造方法，其特征在于，以不低于1100℃，不高于1320℃的熔融铜温度，通过SCR连续铸造，熔融稀释的铜合金材料，形成熔融金属从熔融金属中，通过对铸造棒进行热轧而形成稀铜合金构件，并将稀铜合金构件焊接到金属材料上。稀铜合金材料包括纯铜，超过2质量ppm的氧和添加元素，

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