专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07220995B2 Substrate for electronic device, electronic device and methods of manufacturing same 有权
标题翻译：电子设备基板，电子设备及其制造方法
公开(公告)号：US07220995B2
公开(公告)日：2007-05-22
申请号：US10817907
申请日：2004-04-06
申请人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe
发明人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe
IPC分类号： H01L27/15
CPC分类号： H03H9/175 , B06B1/0644 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/176
摘要： A substrate for an electronic device comprises a base, an adhesion film stacked on the base, and a conductor film stacked on the adhesion film. The adhesion film is a non-epitaxial film including a crystal having a wurtzite crystal structure. The electronic device comprises the substrate and a functional film having a specific function and disposed on the substrate.
摘要翻译：电子器件用基板包括基材，层叠在基材上的粘合膜和层叠在粘合膜上的导体膜。粘附膜是包括具有纤锌矿晶体结构的晶体的非外延膜。电子装置包括基板和具有特定功能的功能膜并且设置在基板上。

2. 发明申请

US20050029629A1 Substrate for electronic device, electronic device and methods of manufacturing same 有权
标题翻译：电子设备基板，电子设备及其制造方法
公开(公告)号：US20050029629A1
公开(公告)日：2005-02-10
申请号：US10817907
申请日：2004-04-06
申请人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe
发明人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe
IPC分类号： H01L21/28 , B06B1/06 , H01L21/283 , H01L21/8246 , H01L27/105 , H01L41/09 , H01L41/187 , H01L41/22 , H01L41/29 , H01L41/319 , H03H3/02 , H03H9/02 , H03H9/17 , H01L29/00 , H01L21/44 , B05D3/06 , H01L31/036 , H01L21/4763
CPC分类号： H03H9/175 , B06B1/0644 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/176
摘要： A substrate for an electronic device comprises a base, an adhesion film stacked on the base, and a conductor film stacked on the adhesion film. The adhesion film is a non-epitaxial film including a crystal having a wurtzite crystal structure. The electronic device comprises the substrate and a functional film having a specific function and disposed on the substrate.
摘要翻译：电子器件用基板包括基材，层叠在基材上的粘合膜和层叠在粘合膜上的导体膜。粘附膜是包括具有纤锌矿晶体结构的晶体的非外延膜。电子装置包括基板和具有特定功能的功能膜并且设置在基板上。

3. 发明授权

US5877661A Surface acoustic wave filter with optimally sized gaps between transducers 失效
标题翻译：表面声波滤波器，在传感器之间具有最佳尺寸的间隙
公开(公告)号：US5877661A
公开(公告)日：1999-03-02
申请号：US737372
申请日：1997-06-17
申请人： Masashi Ohmura , Hiroshi Honmo , Hidenori Abe
发明人： Masashi Ohmura , Hiroshi Honmo , Hidenori Abe
IPC分类号： H03H9/00 , H03H9/64
CPC分类号： H03H9/0028 , H03H9/6433 , H03H9/6469
摘要： A surface acoustic wave filter comprises a first electrode structure array which is formed on the piezoelectric substrate, and includes an input/output IDT, two receipt IDTs formed outside the input/output IDT and two reflectors formed outside the two receipt IDTs, and a second electrode structure array which is formed on the piezoelectric substrate and includes an input/output IDT, two receipt IDTs formed outside the input/output IDT and two reflectors formed outside the two receipt IDTs, which are concatenated with each other. In a case that the surface acoustic wave filter is represented by a symmetrical lattice-type circuit which is expressed by a serial arm impedance and a parallel arm impedance and is electrically equivalent to the same, at least two resonances of the serial arm impedance and at least three resonances of the parallel arm impedance are used to form a passband. The surface acoustic wave filter can have wide bands and low spurious signal.
摘要翻译： PCT No.PCT / JP96 / 00691 Sec。 371日期：1997年6月17日 102（e）日期1997年6月17日PCT 1996年3月15日PCT公布。公开号WO96 / 28886 日期1996年9月19日一种表面声波滤波器，包括形成在压电基板上的第一电极结构阵列，并且包括输入/输出IDT，形成在输入/输出IDT外部的两个接收IDT，以及形成在两个接收之外的两个反射器 IDT，以及形成在压电基板上并包括输入/输出IDT，形成在输入/输出IDT外部的两个接收IDT和形成在两个接收IDT之外的两个反射器的第二电极结构阵列，它们彼此并联。在表面声波滤波器由以串联臂阻抗和并联臂阻抗表示的并且与之相当的对称晶格型电路表示的情况下，串联臂阻抗和串联臂阻抗的至少两个谐振使用并联臂阻抗的至少三个谐振来形成通带。表面声波滤波器可以具有宽带和低杂散信号。

4. 发明授权

US5840732A Imidazopyridine or imidazopyrimidine compounds, their production and use 失效
标题翻译：咪唑并吡啶或咪唑并嘧啶化合物，其生产和使用
公开(公告)号：US5840732A
公开(公告)日：1998-11-24
申请号：US481391
申请日：1996-12-06
申请人： Muneo Takatani , Hitoshi Ikeda , Kyoko Iida , Hidenori Abe
发明人： Muneo Takatani , Hitoshi Ikeda , Kyoko Iida , Hidenori Abe
IPC分类号： C07D471/04 , C07D487/04 , C07D519/00 , A61K31/44 , A61K31/505 , C07D239/72 , C07D405/00 , C07D409/00
CPC分类号： C07D471/04 , C07D487/04
摘要： This invention provides a new condensed imidazole compound possessing inhibitory activity of adhesion molecule expression. This invention also provides a therapeutic and prophylactic agent for diabetic nephritis and/or autoimmune disease and an immunosuppressor for organ transplantation.
摘要翻译： PCT No.PCT / JP95 / 01192 Sec。 371日期1996年12月6日第 102（e）日期1996年12月6日PCT归档1995年6月15日PCT公布。公开号WO95 / 35296 日期：1995年12月28日本发明提供了具有粘附分子表达抑制活性的新的缩合咪唑化合物。本发明还提供了用于糖尿病性肾炎和/或自身免疫性疾病的治疗和预防剂以及用于器官移植的免疫抑制剂。

5. 发明授权

US09809872B2 Dilute copper alloy material, dilute copper alloy wire, dilute copper alloy twisted wire and cable using the same, coaxial cable and composite cable, and method of manufacturing dilute copper alloy material and dilute copper alloy wire 有权
公开(公告)号：US09809872B2
公开(公告)日：2017-11-07
申请号：US12756551
申请日：2010-04-08
申请人： Seigi Aoyama , Toru Sumi , Shuji Sakai , Takahiro Sato , Hidenori Abe
发明人： Seigi Aoyama , Toru Sumi , Shuji Sakai , Takahiro Sato , Hidenori Abe
IPC分类号： C22C9/00 , B22D11/00 , H01B1/02 , C22F1/08 , B22D21/02
CPC分类号： C22C9/00 , B22D21/025 , C22F1/08 , H01B1/026
摘要： A dilute copper alloy material includes, based on a total mass of the dilute copper alloy material, 2 to 12 mass ppm of sulfur, 2 to 30 mass ppm of oxygen, 4 to 55 mass ppm of titanium, and a balance of pure copper and inevitable impurity. A part of the sulfur and the titanium forms a compound or an aggregate of TiO, TiO2, TiS or Ti—O—S, and an other part of the sulfur and the titanium forms a solid solution. TiO, TiO2, TiS and Ti—O—S distributed in a crystal grain of the dilute copper alloy material are not more than 200 nm, not more than 1000 nm, not more than 200 nm and not more than 300 nm, respectively, in particle size thereof, and not less than 90% of particles distributed in a crystal grain of the dilute copper alloy material are 500 nm or less in particle size.

6. 发明申请

US20080009530A1 Therapeutic Agent for Diabetes 审中-公开
标题翻译：糖尿病治疗剂
公开(公告)号：US20080009530A1
公开(公告)日：2008-01-10
申请号：US11666812
申请日：2006-08-09
申请人： Hidenori Abe , Takeshi Wakabayashi , Kentarou Rikimaru
发明人： Hidenori Abe , Takeshi Wakabayashi , Kentarou Rikimaru
IPC分类号： A61K31/415 , A61K31/44 , A61P3/10 , C07D213/02 , C07D231/06
CPC分类号： C07D213/64 , A61K31/415 , A61K31/44 , A61K31/444 , C07C307/06 , C07C311/04 , C07C311/51 , C07C311/53 , C07C381/00 , C07C2601/02 , C07C2601/14 , C07D207/09 , C07D211/46 , C07D213/42 , C07D213/53 , C07D213/80 , C07D231/12 , C07D231/16 , C07D231/24 , C07D241/12 , C07D263/32 , C07D277/28 , C07D277/32 , C07D307/12 , C07D333/20 , C07D401/06 , C07D401/12 , C07D405/12 , C07D409/12 , C07D413/12
摘要： The present invention provides an agent for the prophylaxis or treatment of diabetes, which is associated with a ferwer side effects such as body weight gain, adipocyte accumulation, cardiac hypertrophy and the like, and which contains a compound represented by the formula: wherein each symbol is as defined in the specification, or a salt thereof or a prodrug thereof.
摘要翻译：本发明提供了预防或治疗糖尿病的药剂，其与诸如体重增加，脂肪细胞积聚，心脏肥大等的发育副作用相关，并且其含有下式表示的化合物：其中每个符号如本说明书中所定义，或其盐或其前药。

7. 发明授权

US06259187B1 Piezoelectric bulk acoustic wave device 有权
标题翻译：压电体波器件
公开(公告)号：US06259187B1
公开(公告)日：2001-07-10
申请号：US09472806
申请日：1999-12-28
申请人： Hidenori Abe , Hisatoshi Saitou
发明人： Hidenori Abe , Hisatoshi Saitou
IPC分类号： H03H925
CPC分类号： H03H9/174 , H03H9/177
摘要： An object of the invention is to provide a piezoelectric bulk acoustic wave device having a high effective electromechanical coupling constant and allowing a fractional bandwidth to be broadened when applied to a filter and a normalized frequency variable width to be broadened when applied to an oscillator. Another object of the invention is to provide a miniature piezoelectric bulk acoustic wave device capable of operating at a high frequency of several hundreds of megahertz while maintaining a high electromechanical coupling constant. The piezoelectric bulk acoustic wave device includes a piezoelectric substrate constructed of a single crystal or oriented crystal body of potassium niobate and having a pair of major surfaces, and at least one pair of opposed electrodes formed on the major surfaces of the piezoelectric substrate, respectively, wherein the device utilizes thickness vibration propagating along the major surfaces.
摘要翻译：本发明的目的是提供一种具有高有效机电耦合常数的压电体声波器件，并且当施加到滤波器时允许分数带宽变宽，并且当应用于振荡器时，可以使归一化的频率可变宽度变宽。本发明的另一个目的是提供一种能够在保持高机电耦合常数的同时以几百兆赫兹的高频率工作的微型压电体声波器件。压电体振子装置包括由铌酸钾的单晶或取向晶体构成并具有一对主表面的压电基片和分别形成在压电基板的主表面上的至少一对相对电极，其中该装置利用沿主表面传播的厚度振动。

8. 发明授权

US5850167A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US5850167A
公开(公告)日：1998-12-15
申请号：US750501
申请日：1997-03-20
申请人： Hidenori Abe
发明人： Hidenori Abe
IPC分类号： H03H9/64 , H03M9/64
CPC分类号： H03H9/6459
摘要： A first electrode structure row formed on a piezoelectric substrate, and including N1 pairs of an input/output IDT, N2 pairs of a connection IDT, and reflectors is cascade-connected to a second electrode structure row formed on the piezoelectric substrate, and including N1 pairs of an input/output IDT, N2 pairs of a connection IDT, and reflectors, the connection IDT of the first electrode structure row, and the connection IDT of the second electrode structure row being arranged electrically symmetric with respect to the cascade-connected plane. The pair number N1 of the input/output IDT is different from the pair number N2 of the connection IDT. When a normalized electrode film thickness of the input/output IDT and the connection IDT is represented by h/L, the pair number N1 of the input/output IDT satisfies the following formula 43-11(h/L).ltoreq.N1.ltoreq.61-11(h/L). The surface acoustic wave device can realize good filter characteristics of low insertion losses, small amplitude ripples and group delay time ripples, relatively large specific bandwidths, good shape factors, large attenuation, and is useful as filters for use in mobile communications, etc., especially as intermediate frequency filters for use in digital communications.
摘要翻译： PCT No.PCT / JP96 / 01002 Sec。 371日期1997年3月20日 102（e）1997年3月20日PCT PCT 1996年4月11日PCT公布。出版物WO96 / 32777 日期：1996年10月17日在压电基板上形成的第一电极结构列，包括N1对输入/输出IDT，N2对连接IDT和反射器，级联连接到形成在压电衬底，并且包括N1对输入/输出IDT，N2对连接IDT和反射器，第一电极结构行的连接IDT和第二电极结构行的连接IDT相对于级联连接平面。输入/输出IDT的对号N1不同于连接IDT的对号N2。当输入/输出IDT和连接IDT的归一化电极膜厚由h / L表示时，输入/输出IDT的配对数N1满足下列公式43-11（h / L）

9. 发明申请

US20120100390A1 Weldment and method of manufacturing the same 有权
标题翻译：焊接及其制造方法
公开(公告)号：US20120100390A1
公开(公告)日：2012-04-26
申请号：US13317463
申请日：2011-10-19
申请人： Hiromitsu Kuroda , Toru Sumi , Hideyuki Sagawa , Seigi Aoyama , Masayoshi Goto , Takahiko Hanada , Takahiro Sato , Hidenori Abe
发明人： Hiromitsu Kuroda , Toru Sumi , Hideyuki Sagawa , Seigi Aoyama , Masayoshi Goto , Takahiko Hanada , Takahiro Sato , Hidenori Abe
IPC分类号： B32B15/20 , B23K31/00
CPC分类号： C22C9/00 , B23K31/00 , B32B15/20 , C22C1/02 , C22C1/1036 , C22F1/00 , C22F1/08 , Y10T428/1266 , Y10T428/12667 , Y10T428/12882 , Y10T428/12903 , Y10T428/1291
摘要： A weldment includes metal materials that are welded to each other. At least one of the metal materials includes pure copper including an inevitable impurity, more than 2 mass ppm of oxygen, and an additive element selected from the group consisting of Mg, Zr, Nb, Fe, Si, Al, Ca, V, Ni, Mn, Ti and Cr. A method of manufacturing a weldment includes melting a dilute copper alloy material by SCR continuous casting and rolling at a molten copper temperature of not less than 1100° C. and not more than 1320° C. to make a molten metal, forming a cast bar from the molten metal, forming a dilute copper alloy member by hot-rolling the cast bar, and welding the dilute copper alloy member to a metal material. The dilute copper alloy material includes the pure copper, more than 2 mass ppm of oxygen, and the additive element,
摘要翻译：焊件包括彼此焊接的金属材料。至少一种金属材料包括包含不可避免的杂质的纯铜，大于2质量ppm的氧，以及选自Mg，Zr，Nb，Fe，Si，Al，Ca，V，Ni ，Mn，Ti和Cr。一种焊接件的制造方法，其特征在于，以不低于1100℃，不高于1320℃的熔融铜温度，通过SCR连续铸造，熔融稀释的铜合金材料，形成熔融金属从熔融金属中，通过对铸造棒进行热轧而形成稀铜合金构件，并将稀铜合金构件焊接到金属材料上。稀铜合金材料包括纯铜，大于2质量ppm的氧和添加元素，

10. 发明申请

US20060223826A1 Indole derivatives as somatostatin agonists or antagonists 审中-公开
标题翻译：吲哚衍生物作为生长抑素激动剂或拮抗剂
公开(公告)号：US20060223826A1
公开(公告)日：2006-10-05
申请号：US10534725
申请日：2003-11-18
申请人： Hidenori Abe , Shinichiro Matsunaga , Shiro Takekawa , Masanori Watanabe
发明人： Hidenori Abe , Shinichiro Matsunaga , Shiro Takekawa , Masanori Watanabe
IPC分类号： A61K31/496 , A61K31/454 , C07D403/02
CPC分类号： C07D401/12 , C07D209/20 , C07D209/42 , C07D401/14 , C07D403/12 , C07D405/12 , C07D405/14 , C07D417/12 , C07D417/14 , C07D495/04
摘要： The present invention provide a compound of the formula (I) wherein ring A represents an aromatic ring optionally having substituents; B, Y and Ya are the same or different and each represents a bond, etc.; R1 and R2 are the same or different and each represents a hydrogen atom, etc.; R3 represents a hydrogen atom, etc.; R4 and R5 are the same or different and each represents a hydrogen, etc.; R6 represents an indolyl group optionally having substituents; and Z and Za are the same or different and each represents a hydrogen atom, etc.; or a salt thereof or a prodrug thereof, having a somatostatin receptor binding inhibition activity and is useful for preventing and/or treating diseases associated with somatostatin.
摘要翻译：本发明提供式（I）的化合物，其中环A表示任选具有取代基的芳环; B，Y和Ya是相同或不同的，每个代表一个债券等; R 1和R 2相同或不同，各自表示氢原子等; R 3表示氢原子等; R 4和R 5相同或不同，各自表示氢等; R 6表示任选具有取代基的吲哚基; Z和Za相同或不同，各自表示氢原子等; 或其盐或其前药，具有生长抑素受体结合抑制活性，并且可用于预防和/或治疗与生长抑素相关的疾病。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式