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1. 发明授权

US06235648B1 Semiconductor device including insulation film and fabrication method thereof 有权
标题翻译：包括绝缘膜的半导体器件及其制造方法
公开(公告)号：US06235648B1
公开(公告)日：2001-05-22
申请号：US09160044
申请日：1998-09-25
申请人： Hideki Mizuhara , Hiroyuki Watanabe , Naoteru Matsubara
发明人： Hideki Mizuhara , Hiroyuki Watanabe , Naoteru Matsubara
IPC分类号： H01L21461
CPC分类号： H01L21/76859 , H01L21/02126 , H01L21/02129 , H01L21/02137 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/02282 , H01L21/02321 , H01L21/02351 , H01L21/31111 , H01L21/31116 , H01L21/31155 , H01L21/31612 , H01L21/31633 , H01L21/3185 , H01L21/76801 , H01L21/76825 , H01L21/76829
摘要： A semiconductor device including an insulation film superior in insulation characteristic is obtained. Boron ions are introduced by ion implantation into an organic SOG film with a silicon nitride film formed on the organic SOG film. By this boron implantation, the property of the organic SOG film is modified. The moisture and hydroxyl group included in the film are greatly reduced irrespective of the amount of dose of ions. By using such a layered film of a modified SOG film and a silicon nitride film thereupon as an interlayer insulation film or a passivation film, the water resistance of a semiconductor device can be improved sufficiently.
摘要翻译：获得包括绝缘特性优异的绝缘膜的半导体器件。通过离子注入将硼离子引入到在有机SOG膜上形成的氮化硅膜的有机SOG膜中。通过这种硼注入，有机SOG膜的性质被改变。包括在膜中的水分和羟基与离子的剂量无关地大大降低。通过使用这样的改性SOG膜和氮化硅膜的分层膜作为层间绝缘膜或钝化膜，可以充分提高半导体器件的耐水性。

2. 发明授权

US06690084B1 Semiconductor device including insulation film and fabrication method thereof 有权
标题翻译：包括绝缘膜的半导体器件及其制造方法
公开(公告)号：US06690084B1
公开(公告)日：2004-02-10
申请号：US09716334
申请日：2000-11-21
申请人： Hideki Mizuhara , Hiroyuki Watanabe , Naoteru Matsubara
发明人： Hideki Mizuhara , Hiroyuki Watanabe , Naoteru Matsubara
IPC分类号： H01L23522
CPC分类号： H01L21/02126 , H01L21/02129 , H01L21/02137 , H01L21/02282 , H01L21/02321 , H01L21/0234 , H01L21/02351 , H01L21/02362 , H01L21/31111 , H01L21/31116 , H01L21/31155 , H01L21/31612 , H01L21/31633 , H01L21/3185 , H01L21/76825 , H01L21/76829
摘要： A semiconductor device including an insulation film superior in insulation characteristic is obtained. Boron ions are introduced by ion implantation into an organic SOG film with a silicon nitride film formed on the organic SOG film. By this boron implantation, the property of the organic SOG film is modified. The moisture and hydroxyl group included in the film are greatly reduced irrespective of the amount of dose of ions. By using such a layered film of a modified SOG film and a silicon nitride film thereupon as an interlayer insulation film or a passivation film, the water resistance of a semiconductor device can be improved sufficiently.
摘要翻译：获得包括绝缘特性优异的绝缘膜的半导体器件。通过离子注入将硼离子引入到在有机SOG膜上形成的氮化硅膜的有机SOG膜中。通过这种硼注入，有机SOG膜的性质被改变。包括在膜中的水分和羟基与离子的剂量无关地大大降低。通过使用这样的改性SOG膜和氮化硅膜的分层膜作为层间绝缘膜或钝化膜，可以充分提高半导体器件的耐水性。

3. 发明授权

US06617240B2 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06617240B2
公开(公告)日：2003-09-09
申请号：US09748230
申请日：2000-12-27
申请人： Yasunori Inoue , Naoteru Matsubara , Hidetaka Nishimura , Hideki Mizuhara
发明人： Yasunori Inoue , Naoteru Matsubara , Hidetaka Nishimura , Hideki Mizuhara
IPC分类号： H01L214763
CPC分类号： H01L21/76877 , H01L21/76802 , H01L21/76825 , H01L21/76828
摘要： A method of fabricating a semiconductor device capable of attaining an excellent embedding characteristic also when an opening has a small diameter is obtained. According to this method of fabricating a semiconductor device, an interlayer dielectric film having an opening is formed. A first conductive member is formed in the opening by sputtering. In advance of formation of the first conductive member, first heat treatment is performed at a temperature capable of reducing the quantity of moisture and hydroxyl groups in the interlayer dielectric film. Thus, the interlayer dielectric film has a small quantity of moisture and hydroxyl groups when the first conductive member is embedded in the opening, whereby the embedding characteristic of the first conductive member is improved. Consequently, electric characteristics of a contact part can be improved also when the opening has a small diameter.
摘要翻译：获得了当开口具有小直径时也能够获得优异的嵌入特性的半导体器件的制造方法。根据制造半导体器件的这种方法，形成具有开口的层间绝缘膜。通过溅射在开口中形成第一导电构件。在形成第一导电部件之前，首先在能够降低层间电介质膜的湿度和羟基量的温度下进行热处理。因此，当第一导电部件嵌入开口时，层间电介质膜具有少量的水分和羟基，从而提高了第一导电部件的嵌入特性。因此，当开口具有小直径时，也可以提高接触部的电特性。

4. 发明授权

US06399478B2 Method of making a dual damascene structure with modified insulation 失效
标题翻译：制造具有改性绝缘材料的双镶嵌结构的方法
公开(公告)号：US06399478B2
公开(公告)日：2002-06-04
申请号：US09788661
申请日：2001-02-21
申请人： Naoteru Matsubara , Hideki Mizuhara
发明人： Naoteru Matsubara , Hideki Mizuhara
IPC分类号： H01L214763
CPC分类号： H01L21/76825 , H01L21/76807
摘要： A semiconductor device having a dual damascene structure having a highly reliable multilayered interconnection is applied to the present invention. A protective film (12) is formed on a first interconnection (11), and a modified SOG film (13a) is then provided thereon. An etch stopper film (14) is formed on the modified SOG film (13a), and a modified SOG film (15a) is then formed. The modified SOG film (15a), the etch stopper film (14), and the modified SOG film (13a) are etched away using a resist pattern, to form a via hole (17). The modified SOG film (15a) is etched away using the resist pattern, to form a recess (19) serving as a trench interconnection portion. The etch stopper film (14) and the protective film (12) which are exposed are removed, and the recess is filled with a conductive material (20), to form a conductive plug in the via hole and a second interconnection.
摘要翻译：具有高度可靠的多层互连的双镶嵌结构的半导体器件被应用于本发明。在第一互连（11）上形成保护膜（12），然后在其上提供改性SOG膜（13a）。在改性SOG膜（13a）上形成蚀刻停止膜（14），然后形成改性SOG膜（15a）。使用抗蚀剂图案蚀刻掉改性SOG膜（15a），蚀刻停止膜（14）和改性SOG膜（13a），以形成通孔（17）。使用抗蚀剂图案蚀刻掉改性SOG膜（15a），形成用作沟槽互连部分的凹部（19）。去除暴露的蚀刻停止膜（14）和保护膜（12），并且用导电材料（20）填充凹部，以在通孔和第二互连中形成导电塞。

5. 发明授权

US06917110B2 Semiconductor device comprising an interconnect structure with a modified low dielectric insulation layer 有权
标题翻译：半导体器件包括具有改性的低介电绝缘层的互连结构
公开(公告)号：US06917110B2
公开(公告)日：2005-07-12
申请号：US10310138
申请日：2002-12-05
申请人： Naoteru Matsubara , Hideki Mizuhara , Takashi Goto
发明人： Naoteru Matsubara , Hideki Mizuhara , Takashi Goto
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532
CPC分类号： H01L23/5226 , H01L21/76802 , H01L21/76825 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L21/76835 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device capable of inhibiting a conductive plug from increase of resistance or disconnection resulting from moisture discharged from a first insulator film while reducing the capacitance between adjacent first interconnection layers is obtained. This semiconductor device comprises a plurality of first interconnection layers formed on a semiconductor substrate at a prescribed interval, a first insulator film, formed to fill up the clearance between the plurality of first interconnection layers, having an opening reaching the first interconnection layers and a conductive plug charged in the opening of the first insulator film and formed to be in contact with the first interconnection layers. An impurity is selectively introduced into a first region of the first insulator film in the vicinity of contact surfaces between the first interconnection layers and the conductive plug, thereby selectively modifying the first region of the first insulator film.
摘要翻译：可以获得能够抑制导电插头在降低相邻的第一互连层之间的电容的同时增加从第一绝缘膜释放的湿气引起的电阻或断开的半导体装置。该半导体器件包括以规定间隔形成在半导体衬底上的多个第一互连层，形成为填充多个第一互连层之间的间隙的第一绝缘膜，具有到达第一互连层的开口和导电充电在第一绝缘膜的开口中并形成为与第一互连层接触的插头。在第一互连层和导电插塞之间的接触表面附近，选择性地将杂质引入到第一绝缘膜的第一区域中，从而选择性地改变第一绝缘膜的第一区域。

6. 发明授权

US07999434B2 Electrostatic actuator and power generator 有权
标题翻译：静电执行器和发电机
公开(公告)号：US07999434B2
公开(公告)日：2011-08-16
申请号：US12630278
申请日：2009-12-03
申请人： Yoshiki Murayama , Naoteru Matsubara
发明人： Yoshiki Murayama , Naoteru Matsubara
IPC分类号： H02N1/00
CPC分类号： H02N1/08 , H02N1/004
摘要： This electrostatic actuator includes an electret film and a conductor layer formed on the electret film, and the conductor layer is so formed as to have a sectional shape reduced in width upward from the side closer to the electret film.
摘要翻译：该静电致动器包括驻极体膜和形成在驻极体膜上的导体层，并且导体层形成为具有从更接近驻极体侧的一侧的宽度向下减小的截面形状。

7. 发明授权

US07956497B2 Electret device and electrostatic induction conversion apparatus comprising the same 有权
标题翻译：包括该驻极体装置和静电感应转换装置
公开(公告)号：US07956497B2
公开(公告)日：2011-06-07
申请号：US11864488
申请日：2007-09-28
申请人： Yoshiki Murayama , Naoteru Matsubara , Katsuji Mabuchi
发明人： Yoshiki Murayama , Naoteru Matsubara , Katsuji Mabuchi
IPC分类号： G11C13/02
CPC分类号： H02N1/08
摘要： An electret device includes an electret film into which charges are injected and a barrier film provided on a surface of the electret film and having an electron affinity smaller than the electron affinity of the electret film.
摘要翻译：驻极体装置包括其中注入电荷的驻极体膜和设置在驻极体膜的表面上并具有小于驻极体膜的电子亲和力的电子亲和力的阻挡膜。

8. 发明申请

US20080258565A1 ELECTRET DEVICE AND ELECTROSTATIC INDUCTION CONVERSION APPARATUS COMPRISING THE SAME 有权
标题翻译：电极装置和静电感应转换装置包括它们
公开(公告)号：US20080258565A1
公开(公告)日：2008-10-23
申请号：US11864488
申请日：2007-09-28
申请人： Yoshiki MURAYAMA , Naoteru Matsubara , Katsuji Mabuchi
发明人： Yoshiki MURAYAMA , Naoteru Matsubara , Katsuji Mabuchi
IPC分类号： H02N1/00
CPC分类号： H02N1/08
摘要： An electret device includes an electret film into which charges are injected and a barrier film provided on a surface of the electret film and having an electron affinity smaller than the electron affinity of the electret film.
摘要翻译：驻极体装置包括其中注入电荷的驻极体膜和设置在驻极体膜的表面上并具有小于驻极体膜的电子亲和力的电子亲和力的阻挡膜。

9. 发明授权

US06469391B2 Semiconductor device having silicon oxide sidewalls 有权
标题翻译：具有氧化硅侧壁的半导体器件
公开(公告)号：US06469391B2
公开(公告)日：2002-10-22
申请号：US09747974
申请日：2000-12-27
申请人： Naoteru Matsubara
发明人： Naoteru Matsubara
IPC分类号： H01L23535
CPC分类号： H01L21/76819 , H01L21/76825 , H01L21/76829 , H01L21/76834 , H01L21/76885 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device capable of preventing a conductive member embedded in an interlayer dielectric film from oxidation or corrosion and keeping the electric characteristics of the conductive member excellent is obtained. The semiconductor device comprises the interlayer dielectric film, the conductive member embedded in the interlayer dielectric film and side wall insulator films formed on the side surfaces of the conductive member. Thus, the side wall insulator films inhibit moisture and hydroxyl groups contained in the interlayer dielectric film from reaching the conductive member. Therefore, the conductive member is prevented from inconvenience such as oxidation or corrosion resulting from moisture and hydroxyl groups discharged from the interlayer dielectric film. Consequently, the electric characteristics of a contact part can be maintained excellent.
摘要翻译：可以获得能够防止嵌入在层间电介质膜中的导电构件发生氧化或腐蚀并且保持导电构件的电特性优异的半导体器件。半导体器件包括层间电介质膜，嵌入在层间电介质膜中的导电构件和形成在导电构件的侧表面上的侧壁绝缘膜。因此，侧壁绝缘体膜抑制层间电介质膜中含有的水分和羟基到达导电性部件。因此，可以防止导电部件由于从层间电介质膜排出的湿气和羟基而引起的氧化或腐蚀等不便。因此，可以保持良好的接触部的电特性。

10. 发明授权

US08466600B2 Electrostatic operation device 有权
标题翻译：静电操作装置
公开(公告)号：US08466600B2
公开(公告)日：2013-06-18
申请号：US13464741
申请日：2012-05-04
申请人： Yohko Naruse , Yoshinori Shishida , Naoteru Matsubara , Kazunari Honma , Eiji Yuasa
发明人： Yohko Naruse , Yoshinori Shishida , Naoteru Matsubara , Kazunari Honma , Eiji Yuasa
IPC分类号： H02N1/00
CPC分类号： H02N1/006 , H01G7/023 , H02N1/08
摘要： An electrostatic operation device in which a variation in the amount of electric charges accumulated in an electret film caused by physical impact can be suppressed. The electrostatic operation device (electrostatic induction power generating device (1)) comprises movable electrodes (8), an electret film (5) so formed as to face the movable electrodes (8) at a space therebetween, and a stopper (401b) for suppressing the approach of the movable electrodes (8) to the electret film (5) within a predetermined space.
摘要翻译：可以抑制由物理冲击引起的驻留体膜中累积的电荷量的变化的静电操作装置。静电感应发生装置（静电感应发生装置（1））包括可移动电极（8），在它们之间的空间与可动电极（8）相对形成的驻极体膜（5），以及用于抑制在预定空间内可移动电极（8）到驻极体膜（5）的接近。

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