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    • 1. 发明授权
    • Method of fabricating semiconductor device
    • 制造半导体器件的方法
    • US06617240B2
    • 2003-09-09
    • US09748230
    • 2000-12-27
    • Yasunori InoueNaoteru MatsubaraHidetaka NishimuraHideki Mizuhara
    • Yasunori InoueNaoteru MatsubaraHidetaka NishimuraHideki Mizuhara
    • H01L214763
    • H01L21/76877H01L21/76802H01L21/76825H01L21/76828
    • A method of fabricating a semiconductor device capable of attaining an excellent embedding characteristic also when an opening has a small diameter is obtained. According to this method of fabricating a semiconductor device, an interlayer dielectric film having an opening is formed. A first conductive member is formed in the opening by sputtering. In advance of formation of the first conductive member, first heat treatment is performed at a temperature capable of reducing the quantity of moisture and hydroxyl groups in the interlayer dielectric film. Thus, the interlayer dielectric film has a small quantity of moisture and hydroxyl groups when the first conductive member is embedded in the opening, whereby the embedding characteristic of the first conductive member is improved. Consequently, electric characteristics of a contact part can be improved also when the opening has a small diameter.
    • 获得了当开口具有小直径时也能够获得优异的嵌入特性的半导体器件的制造方法。 根据制造半导体器件的这种方法,形成具有开口的层间绝缘膜。 通过溅射在开口中形成第一导电构件。 在形成第一导电部件之前,首先在能够降低层间电介质膜的湿度和羟基量的温度下进行热处理。 因此,当第一导电部件嵌入开口时,层间电介质膜具有少量的水分和羟基,从而提高了第一导电部件的嵌入特性。 因此,当开口具有小直径时,也可以提高接触部的电特性。