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    • 3. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US08077753B2
    • 2011-12-13
    • US12594098
    • 2009-02-09
    • Shingo KameyamaYoshiki Murayama
    • Shingo KameyamaYoshiki Murayama
    • H01S5/00
    • H01S5/34333B82Y20/00H01S5/028H01S5/0287H01S5/2009H01S5/22H01S5/3063
    • A semiconductor laser device capable of improving the reliability of the laser device is obtained. This semiconductor laser device (1000) includes a semiconductor element layer (20) having a light emitting layer (25), a first cavity facet (1) formed on an end portion on a light emitting side of a region of the semiconductor element layer including the light emitting layer, a first insulating film (40) in which a first nitride film (41), a first intermediate film including a first oxide film (42) and a second nitride film (43) are formed on the first cavity facet in this order from the side of the first cavity facet and a second insulating film (51), formed on the first insulating film, including a second oxide film (51).
    • 获得能够提高激光装置的可靠性的半导体激光装置。 该半导体激光器件(1000)包括具有发光层(25)的半导体元件层(20),形成在半导体元件层的区域的发光侧的端部的第一空腔面(1) 发光层,第一绝缘膜(40),其中第一氮化物膜(41),包括第一氧化膜(42)和第二氮化物膜(43)的第一中间膜形成在第一空腔面上 从第一腔面的一侧开始并且形成在第一绝缘膜上的包括第二氧化膜的第二绝缘膜(51)。
    • 10. 发明申请
    • NITRIDE-BASED SEMICONDUCTOR LASER ELEMENT AND OPTICAL APPARATUS
    • 基于氮化物的半导体激光元件和光学设备
    • US20120093186A1
    • 2012-04-19
    • US13273617
    • 2011-10-14
    • Yoshiki MURAYAMA
    • Yoshiki MURAYAMA
    • H01S5/02
    • H01S5/34333B82Y20/00H01S5/0287H01S5/4087
    • This nitride-based semiconductor laser element includes a semiconductor element layer made of a nitride-based semiconductor having an emitting-side cavity facet and a reflecting-side cavity facet, and a facet coating film formed on the emitting-side cavity facet. The facet coating film has a first dielectric film made of aluminum nitride formed in contact with the emitting-side cavity facet, a second dielectric film made of aluminum oxynitride formed on a side of the first dielectric film opposite to the emitting-side cavity facet, a third dielectric film made of aluminum oxide formed on a side of the second dielectric film opposite to the first dielectric film, a fourth dielectric film made of aluminum oxynitride formed on a side of the third dielectric film opposite to the second dielectric film, and a fifth dielectric film made of aluminum oxide formed on a side of the fourth dielectric film opposite to the third dielectric film.
    • 该氮化物系半导体激光元件包括由具有发光侧腔​​面和反射侧腔面的氮化物系半导体构成的半导体元件层,以及形成在发光侧腔面的小面涂膜。 所述小面涂膜具有由与发光侧腔面形成的氮化铝制成的第一电介质膜,在与所述发光侧腔面相对的所述第一电介质膜侧形成的由氧氮化铝构成的第二电介质膜, 在与第一电介质膜相反的第二电介质膜一侧形成的由氧化铝制成的第三电介质膜,形成在与第二电介质膜相反的第三电介质膜侧的由氧氮化铝制成的第四电介质膜, 形成在与第三电介质膜相反的第四电介质膜的一侧的由氧化铝制成的第五绝缘膜。