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1. 发明申请

US20090068851A1 SUSCEPTOR, MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于半导体器件的半导体器件的制造装置和半导体器件的制造方法
公开(公告)号：US20090068851A1
公开(公告)日：2009-03-12
申请号：US12207754
申请日：2008-09-10
申请人： Hironobu Hirata , Yoshikazu Moriyama , Masayoshi Yajima , Shinichi Mitani
发明人： Hironobu Hirata , Yoshikazu Moriyama , Masayoshi Yajima , Shinichi Mitani
IPC分类号： H01L21/31 , C23C14/50
CPC分类号： C23C16/4584 , C23C16/4585 , C23C16/46 , H01L21/68742 , H01L21/6875 , H01L21/68764
摘要： A susceptor of the present invention includes an inner susceptor having a diameter smaller than a diameter of a wafer w and a protruding part for placing the wafer w on a surface thereof, and an outer susceptor having an opening in the central portion thereof, a first step section for placing the inner susceptor so as to block the opening and a second step section provided above the first step section for placing the wafer.
摘要翻译：本发明的感受体包括直径小于晶片w的直径的内基座和用于将晶片w放置在其表面上的突出部分，以及在其中心部分具有开口的外基座，第一步骤部分，用于放置内部基座以阻挡开口;以及第二台阶部分，设置在第一台阶部分之上用于放置晶片。

2. 发明申请

US20100075509A1 MANUFACTURING METHOD AND MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的制造方法和制造设备
公开(公告)号：US20100075509A1
公开(公告)日：2010-03-25
申请号：US12563602
申请日：2009-09-21
申请人： Hironobu Hirata , Masayoshi Yajima , Yoshikazu Moriyama
发明人： Hironobu Hirata , Masayoshi Yajima , Yoshikazu Moriyama
IPC分类号： H01L21/316 , B05C11/00
CPC分类号： H01L21/02299 , C23C16/46 , H01L21/02164 , H01L21/02236 , H01L21/67109 , H01L21/67751
摘要： A manufacturing method for a semiconductor device, including: loading a wafer into a reaction chamber; placing the wafer on a push-up shaft moved up; preheating the wafer under controlling an in-plane temperature distribution of the wafer to be a recess state under a state of placing the wafer on the push-up shaft moved up; lowering the push-up shaft with the wafer kept in the recess state to hold the wafer on a wafer holding member; heating the wafer to a predetermined temperature; rotating the wafer; and supplying a process gas onto the wafer.
摘要翻译：一种半导体器件的制造方法，包括：将晶片装载到反应室中; 将晶片放置在上推轴上; 在将晶片放置在上推轴上的状态下，将晶片的面内温度分布控制为凹陷状态来预热晶片; 在晶片保持处于凹状状态的同时降低上推轴将晶片保持在晶片保持构件上; 将晶片加热至预定温度; 旋转晶片; 并将工艺气体供应到晶片上。

3. 发明申请

US20090139448A1 VAPOR PHASE GROWTH APPARATUS ANS VAPOR PHASE GROWTH METHOD 审中-公开
标题翻译：蒸汽相生长装置ANS蒸汽相生长方法
公开(公告)号：US20090139448A1
公开(公告)日：2009-06-04
申请号：US12323362
申请日：2008-11-25
申请人： Hironobu HIRATA , Masayoshi Yajima
发明人： Hironobu HIRATA , Masayoshi Yajima
IPC分类号： C30B23/06
CPC分类号： C30B25/12 , C23C16/4584 , C23C16/4585 , C30B29/06
摘要： A vapor phase growth apparatus and a vapor phase growth method capable of improving the yield rate of wafers by stopping infiltration of metal contaminants generated below a horizontal disk-like susceptor is provided. The vapor phase growth apparatus according to embodiments of the present invention includes a holder having an annular shape and on which a wafer can be placed, a disk-shaped susceptor on which the holder can be placed and provided on an upper surface thereof with circumferential steps inscribed in inner circumferential edge of the holder when the holder is placed, a rotation driving mechanism for rotating the susceptor and the holder at a predetermined rotational speed, a heating mechanism for heating the wafer placed on the holder, and a wafer push-up mechanism to push up an undersurface of the holder outside the rotation driving mechanism.
摘要翻译：提供了一种气相生长装置和气相生长方法，其能够通过阻止在水平圆盘状基座之下产生的金属污染物的渗透来提高晶片的产率。根据本发明的实施例的气相生长装置包括具有环形形状并且可以放置晶片的保持器，可以将保持器放置在其上的盘形基座，并且在其上表面上设置圆周状的台阶当保持器被放置时刻在保持器的内圆周边缘中，用于以预定旋转速度旋转基座和保持器的旋转驱动机构，用于加热放置在保持器上的晶片的加热机构和晶片上推机构以将支架的下表面推向旋转驱动机构外部。

4. 发明授权

US07923355B2 Manufacturing method for semiconductor device and manufacturing apparatus for semiconductor device 有权
标题翻译：半导体装置的制造方法及半导体装置的制造装置
公开(公告)号：US07923355B2
公开(公告)日：2011-04-12
申请号：US12257845
申请日：2008-10-24
申请人： Masayoshi Yajima , Yoshikazu Moriyama
发明人： Masayoshi Yajima , Yoshikazu Moriyama
IPC分类号： H01L21/20 , H01L21/36 , H01L21/31
CPC分类号： H01L21/0262 , C23C16/402 , C23C16/4405 , H01L21/02381 , H01L21/02532 , H01L21/02661
摘要： A manufacturing method for a semiconductor device includes retaining a wafer in a reaction chamber, supplying first process gas including source gas and second process gas containing H2 or inert gas onto the wafer in a rectified state alternately in a predetermined cycle, rotating the wafer, and heating the wafer to form a film on the wafer.
摘要翻译：一种半导体装置的制造方法，其特征在于，将晶片保持在反应室内，以预定的周期交替地，以规定的周期，将包含源气体的第一处理气体和含有H 2或惰性气体的第二处理气体以精炼状态交替地供给到晶片上，旋转晶片，加热晶片以在晶片上形成膜。

5. 发明申请

US20100163524A1 METHOD FOR MANUFACTURING SUSCEPTOR 有权
标题翻译：制造不方便的方法
公开(公告)号：US20100163524A1
公开(公告)日：2010-07-01
申请号：US12635815
申请日：2009-12-11
申请人： Hideki ARAI , Masayoshi Yajima , Kunihiko Suzuki
发明人： Hideki ARAI , Masayoshi Yajima , Kunihiko Suzuki
IPC分类号： C09J5/02 , B44C1/22
CPC分类号： H01L21/68757 , C23C16/4581 , C30B25/12
摘要： A method for manufacturing a susceptor includes: forming a concave pattern in a surface of a substrate to be processed; applying a SiC paste containing a SiC powder and a sintering agent to the surface of the substrate to be processed to fill the concave pattern to form a SiC coating layer; laminating a SiC substrate on the SiC coating layer; and firing the SiC coating layer to form a SiC layer having at least one convex section on the surface of the SiC substrate.
摘要翻译：一种感受器的制造方法，其特征在于，在被处理基板的表面形成凹形图案，将含有SiC粉末和烧结剂的SiC浆料涂布到待加工的基板的表面，以填充凹形图案以形成SiC涂层; 在SiC涂层上层叠SiC衬底; 烧结SiC涂层以形成在SiC衬底的表面上具有至少一个凸部的SiC层。

6. 发明授权

US08524103B2 Method for manufacturing susceptor 有权
标题翻译：感受器制造方法
公开(公告)号：US08524103B2
公开(公告)日：2013-09-03
申请号：US12635815
申请日：2009-12-11
申请人： Hideki Arai , Masayoshi Yajima , Kunihiko Suzuki
发明人： Hideki Arai , Masayoshi Yajima , Kunihiko Suzuki
IPC分类号： C23F1/00 , C03C15/00 , C03C25/68 , C25F3/00
CPC分类号： H01L21/68757 , C23C16/4581 , C30B25/12
摘要： A method for manufacturing a susceptor includes: forming a concave pattern in a surface of a substrate to be processed; applying a SiC paste containing a SiC powder and a sintering agent to the surface of the substrate to be processed to fill the concave pattern to form a SiC coating layer; laminating a SiC substrate on the SiC coating layer; and firing the SiC coating layer to form a SiC layer having at least one convex section on the surface of the SiC substrate.
摘要翻译：一种感受器的制造方法，其特征在于，在被处理基板的表面形成凹形图案，将含有SiC粉末和烧结剂的SiC浆料涂布到待加工的基板的表面，以填充凹形图案以形成SiC涂层; 在SiC涂层上层叠SiC衬底; 烧结SiC涂层以形成在SiC衬底的表面上具有至少一个凸部的SiC层。

7. 发明申请

US20110200749A1 FILM DEPOSITION APPARATUS AND METHOD 审中-公开
标题翻译：电影沉积装置和方法
公开(公告)号：US20110200749A1
公开(公告)日：2011-08-18
申请号：US13020188
申请日：2011-02-03
申请人： Kunihiko SUZUKI , Masayoshi Yajima
发明人： Kunihiko SUZUKI , Masayoshi Yajima
IPC分类号： C23C16/458 , C23C16/455 , C23C16/46
CPC分类号： C23C16/4402 , C23C16/455 , C23C16/4585
摘要： A chamber includes at its upper section a gas inlet from which to introduce a deposition gas. The inner walls of the chamber are covered by a cylindrical liner, and the chamber houses a susceptor assembly on which to place a semiconductor substrate. The liner includes a barrel section inside which the susceptor assembly is placed; a head section that is located right below the gas inlet and smaller in horizontal cross-sectional area than the barrel section; and a stepped section that connects the barrel section and the head section. The susceptor assembly is formed by fixing a ring plate to a susceptor via support posts. The ring plate covers the periphery of the stepped section of the liner. By the deposition gas flowing in a downward direction from the gas inlet into the chamber, a crystalline film is formed on the substrate positioned on the susceptor assembly.
摘要翻译：一个室在其上部包括一个气体入口，从该入口引入沉积气体。腔室的内壁由圆柱形衬套覆盖，并且腔室容纳基座组件，放置半导体衬底。衬套包括一个筒体部分，底座组件被放置在其中; 头部位于气体入口的正下方，水平横截面积小于桶部分; 以及连接筒部和头部的台阶部。通过支撑柱将环板固定到基座来形成基座组件。环板覆盖衬套的台阶部分的周边。通过从气体入口向室内向下流动的沉积气体，在位于基座组件上的基板上形成结晶膜。

8. 发明授权

US07967912B2 Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device 有权
标题翻译：半导体装置的制造装置及半导体装置的制造方法
公开(公告)号：US07967912B2
公开(公告)日：2011-06-28
申请号：US12324578
申请日：2008-11-26
申请人： Masayoshi Yajima , Kunihiko Suzuki
发明人： Masayoshi Yajima , Kunihiko Suzuki
IPC分类号： C23C16/455 , C23C16/458 , C23C16/54
CPC分类号： H01L21/67109 , H01L21/02381 , H01L21/0262 , H01L21/67017 , H01L21/68785 , H01L21/68792
摘要： A manufacturing apparatus for a semiconductor device, includes: a reaction chamber to which a wafer w is loaded; a gas supply port for supplying first process gas including source gas from an upper portion of the reaction chamber; a first rectifying plate for supplying the first process gas onto the wafer in a rectifying state; a first gas exhaust port for exhausting gas from a lower portion of the reaction chamber; a second gas exhaust port for exhausting gas from the upper portion of the reaction chamber; a heater for heating the wafer w; a susceptor for retaining the wafer w; and a rotation drive unit for rotating the wafer w.
摘要翻译：一种半导体器件的制造装置，包括：加载有晶片w的反应室; 用于从反应室的上部供给包括源气体的第一处理气体的气体供给口; 第一整流板，用于在整流状态下将第一处理气体供应到晶片上; 用于从反应室的下部排出气体的第一排气口; 用于从反应室的上部排出气体的第二排气口; 用于加热晶片w的加热器; 用于保持晶片w的基座; 以及用于旋转晶片w的旋转驱动单元。

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