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1. 发明授权

US06362561B1 Piezoelectric vibration device and piezoelectric resonance component 有权
标题翻译：压电振动装置和压电谐振元件
公开(公告)号：US06362561B1
公开(公告)日：2002-03-26
申请号：US09501086
申请日：2000-02-09
申请人： Hideaki Kuroda , Ryuhei Yoshida
发明人： Hideaki Kuroda , Ryuhei Yoshida
IPC分类号： H01L4104
CPC分类号： H03H9/177 , H03H9/0547 , H03H9/1014
摘要： An energy-trapping piezoelectric vibration device generates a thickness shear mode and includes an elongated piezoelectric element having first and second longitudinally opposed ends, top and bottom surfaces provided between the first and second ends such that the top and bottom surfaces oppose each other, and beveled surfaces disposed at a vicinity of the first and second ends such that the thickness of the piezoelectric element gradually decreases towards the first and second ends, respectively. First and second vibration electrodes are disposed on the top surface and the bottom surface of the piezoelectric element, respectively. The first and second vibration electrodes are located at an approximate middle portion of the piezoelectric element so as to oppose each other with the piezoelectric element disposed therebetween, to define opposing portions which constitute a vibrator. A roughness of the beveled surfaces is greater than a roughness of a flat portion of the top and bottom surfaces of the piezoelectric substrate disposed beneath the vibration electrodes.
摘要翻译：能量捕获压电振动装置产生厚度剪切模式，并且包括具有第一和第二纵向相对端的细长压电元件，顶表面和底表面设置在第一和第二端之间，使得顶表面和底表面彼此相对，并且倾斜表面设置在第一端和第二端附近，使得压电元件的厚度分别朝向第一端和第二端逐渐减小。第一和第二振动电极分别设置在压电元件的顶表面和底表面上。第一和第二振动电极位于压电元件的大致中间部分处以彼此相对的压电元件设置在它们之间，以限定构成振动器的相对部分。倾斜表面的粗糙度大于设置在振动电极下方的压电基板的顶表面和底表面的平坦部分的粗糙度。

2. 发明授权

US06806626B2 Electronic component 失效
标题翻译：电子元器件
公开(公告)号：US06806626B2
公开(公告)日：2004-10-19
申请号：US09971034
申请日：2001-10-05
申请人： Shungo Morinaga , Ryuhei Yoshida , Hideaki Kuroda
发明人： Shungo Morinaga , Ryuhei Yoshida , Hideaki Kuroda
IPC分类号： H01L4108
CPC分类号： H03H9/178 , H01L41/0475 , H03H9/177
摘要： In a piezoelectric resonator, first and second resonance electrodes are provided on the upper surface and the lower surface of a piezoelectric member, inner electrode layers for leading the first and second resonance electrodes to the upper and lower surfaces are provided and extend to the upper and lower surfaces of the piezoelectric member, and connecting electrodes are provided on the upper and lower surfaces of the piezoelectric member, and are electrically connected to the corresponding resonance electrodes via the inner electrode layers.
摘要翻译：在压电谐振器中，第一和第二谐振电极设置在压电元件的上表面和下表面上，用于将第一和第二谐振电极引导到上表面和下表面的内电极层延伸到上，压电构件的下表面和连接电极设置在压电构件的上表面和下表面上，并且经由内电极层电连接到相应的谐振电极。

3. 发明授权

US06215229B1 Chip-type piezoelectric resonator and method for adjusting resonance frequency thereof 失效
标题翻译：片式压电谐振器及其谐振频率的调节方法
公开(公告)号：US06215229B1
公开(公告)日：2001-04-10
申请号：US09310237
申请日：1999-05-12
申请人： Hideaki Kuroda , Masaya Wajima , Ryuhei Yoshida
发明人： Hideaki Kuroda , Masaya Wajima , Ryuhei Yoshida
IPC分类号： H03H917
CPC分类号： H03H9/177 , H03H3/04 , H03H9/0561 , H03H9/1035 , H03H2003/0428
摘要： A capacitor-included, chip-type piezoelectric resonator allows minute and highly precise adjustment of electrostatic capacitance and the resonance frequency after production of the piezoelectric resonator by laminating a piezoelectric element and dielectric substrates. The resonator includes a piezoelectric substrate laminated with dielectric substrates and external electrodes disposed on the laminate body. A plurality of external electrodes are arranged to extend from the outer major surface of the first dielectric substrate to the outer major surface of the second dielectric substrate along first and second side surfaces disposed opposite to each other. On the outer major surface of the second dielectric substrate, at least one external electrode is divided into first and second electrode portions.
摘要翻译：包含电容器的芯片型压电谐振器通过层叠压电元件和电介质基板，能够在制造压电谐振器之后对静电电容和谐振频率进行微调和高度精确的调整。谐振器包括层叠有电介质基板的压电基板和设置在层叠体上的外部电极。多个外部电极布置成沿着彼此相对设置的第一和第二侧表面从第一电介质基板的外主表面延伸到第二电介质基板的外主表面。在第二电介质基板的外主表面上，至少一个外电极被分成第一和第二电极部分。

4. 发明授权

US09093316B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09093316B2
公开(公告)日：2015-07-28
申请号：US13475365
申请日：2012-05-18
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L21/3205 , H01L27/115 , H01L21/74 , H01L21/768 , H01L23/48 , H01L27/12 , H01L27/22 , H01L27/24 , H01L21/8238 , H01L45/00
CPC分类号： H01L27/11507 , H01L21/74 , H01L21/76895 , H01L21/823814 , H01L23/481 , H01L27/1203 , H01L27/228 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/146 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device includes: diffusion layers formed at the front surface of a substrate; low-resistance parts formed at the front surfaces of the diffusion layers so as to have resistance lower than the diffusion layer; and rear contact electrodes passing through the substrate from the rear surface of the substrate to be connected to the low-resistance parts through the diffusion layers.
摘要翻译：半导体器件包括：形成在衬底的前表面的扩散层; 在扩散层的前表面形成低电阻部分以具有低于扩散层的电阻; 以及从基板的后表面穿过基板的后接触电极，以通过扩散层连接到低电阻部分。

5. 发明申请

US20120130082A1 1-Substituted-4-Nitroimidazole Compound and Method for Preparing the Same 审中-公开
标题翻译： 1-取代的4-硝基咪唑化合物及其制备方法
公开(公告)号：US20120130082A1
公开(公告)日：2012-05-24
申请号：US13362646
申请日：2012-01-31
申请人： Fumitaka GOTO , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
发明人： Fumitaka GOTO , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
IPC分类号： C07D405/06 , C07D233/92 , C07D233/84
CPC分类号： C07D233/92
摘要： The present invention relates to a 1-substituted-4-nitroimidazole compound represented by the general formula (1) or a salt thereof, (wherein R is a hydrogen atom, a lower alkoxy group-substituted lower alkyl group, a phenyl-lower alkoxy group-substituted lower alkyl group, a cyano-substituted lower alkyl group, a phenyl-lower alkyl group which may have lower alkoxy groups as the substituents in the phenyl ring or a group of the formula —CH2RA; X is a halogen atom or a group of the formula —S(O)n-R1) and method for preparing the same. The compound of the formula (1) is a useful compound as an intermediate for synthesis of various pharmaceutical and agricultural chemicals, particularly, as intermediates for antitubercular agents.
摘要翻译：本发明涉及由通式（1）表示的1-取代-4-硝基咪唑化合物或其盐（其中R是氢原子，低级烷氧基取代的低级烷基，苯基 - 低级烷氧基取代基的低级烷基，氰基取代的低级烷基，可以具有低级烷氧基作为苯环中的取代基的苯基 - 低级烷基或式-CH2RA的基团; X是卤素原子或基团-S（O）n -R1）及其制备方法。式（1）的化合物是用作合成各种药用和农药的中间体的有用化合物，特别是作为抗结核剂的中间体。

6. 发明申请

US20100140617A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US20100140617A1
公开(公告)日：2010-06-10
申请号：US12629150
申请日：2009-12-02
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L29/78 , H01L21/66 , H01L23/544
CPC分类号： H01L27/105 , H01L21/84 , H01L22/14 , H01L22/20 , H01L27/11 , H01L27/1104 , H01L27/1116 , H01L27/1203 , H01L29/78 , H01L29/7855
摘要： A semiconductor device manufacturing method includes the steps of: forming a transistor on a surface side of a silicon layer of a silicon-on-insulator substrate, the silicon-on-insulator substrate being formed by laminating a substrate, an insulating layer, and the silicon layer; forming a first insulating film covering the transistor and a wiring section including a part electrically connected to the transistor on the silicon-on-insulator substrate; measuring a threshold voltage of the transistor through the wiring section; forming a supporting substrate on a surface of the first insulating film with a second insulating film interposed between the supporting substrate and the first insulating film; removing at least a part of the substrate and the insulating layer on a back side of the silicon-on-insulator substrate; and adjusting the threshold voltage of the transistor on a basis of the measured threshold voltage.
摘要翻译：半导体器件制造方法包括以下步骤：在绝缘体上硅衬底的硅层的表面侧上形成晶体管，绝缘体上硅衬底通过层叠衬底，绝缘层和硅层; 形成覆盖晶体管的第一绝缘膜和包括与绝缘体上硅基板上的晶体管电连接的部分的布线部分; 通过所述布线部分测量所述晶体管的阈值电压; 在所述第一绝缘膜的表面上形成支撑衬底，其中所述第二绝缘膜置于所述支撑衬底和所述第一绝缘膜之间; 在绝缘体上硅衬底的背面去除衬底和绝缘层的至少一部分; 以及基于测量的阈值电压来调整晶体管的阈值电压。

7. 发明申请

US20090264404A1 Derivatives of 4-piperazin-1-yl-4-benzo[b]thiophene suitable for the treatment of cns disorders 有权
标题翻译：适用于治疗cns病症的4-哌嗪-1-基-4-苯并[b]噻吩的衍生物
公开(公告)号：US20090264404A1
公开(公告)日：2009-10-22
申请号：US11991146
申请日：2006-08-31
申请人： Hiroshi Yamashita , Hideaki Kuroda , Nobuaki Ito , Shin Miyamura , Kunio Oshima , Jun Matsubara , Haruka Takahashi , Tae Fukushima , Satoshi Shimizu , Kazumi Kondo , Yohji Sakurai , Takeshi Kuroda , Shinichi Taira , Motohiro Itotani , Tatsuyoshi Tanaka
发明人： Hiroshi Yamashita , Hideaki Kuroda , Nobuaki Ito , Shin Miyamura , Kunio Oshima , Jun Matsubara , Haruka Takahashi , Tae Fukushima , Satoshi Shimizu , Kazumi Kondo , Yohji Sakurai , Takeshi Kuroda , Shinichi Taira , Motohiro Itotani , Tatsuyoshi Tanaka
IPC分类号： A61K31/496 , C07D409/14 , C07D265/36 , C07D223/08 , C07D243/08 , C07D267/14 , A61K31/536 , A61K31/55 , A61K31/551 , A61K31/553 , A61K31/397 , A61P25/00
CPC分类号： C07D409/12 , C07D333/54 , C07D407/12 , C07D409/14 , C07D413/12 , C07D417/12 , C07D487/08 , C07D491/113
摘要： A heterocyclic compound or a salt thereof represented by the formula (1): where R2 represents a hydrogen atom or a lower alkyl group; A represents a lower alkylene group or lower alkenylene group; and R1 represents an aromatic group or a heterocyclic group. The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety.
摘要翻译：由式（1）表示的杂环化合物或其盐：其中R 2表示氢原子或低级烷基; A表示低级亚烷基或低级亚烯基; R1表示芳基或杂环基。本发明的化合物具有广泛的精神障碍治疗范围，包括中枢神经系统疾病，无副作用和高安全性。

8. 发明申请

US20080218031A1 Electroacoustic Transducer 有权
标题翻译：电声传感器
公开(公告)号：US20080218031A1
公开(公告)日：2008-09-11
申请号：US12126022
申请日：2008-05-23
申请人： Hideaki Kuroda , Yoshihiro Sonoda
发明人： Hideaki Kuroda , Yoshihiro Sonoda
IPC分类号： H04R17/00
CPC分类号： H04R17/10
摘要： An electroacoustic transducer having one end portion of a first piezoelectric element and one end portion of a second piezoelectric element fixed to a frame such that the first piezoelectric element and the second piezoelectric element are supported by the frame in an opening of the frame in the cantilever manner. A flexible thin film is bonded to the frame and the first and second piezoelectric elements so that it covers at least a gap between each of the piezoelectric elements and the frame. The other end portions of the piezoelectric elements are free end portions, and face each other with a gap therebetween.
摘要翻译：一种电声换能器，其具有第一压电元件的一个端部和固定到框架的第二压电元件的一个端部，使得第一压电元件和第二压电元件由框架支撑在悬臂中的框架的开口中方式。柔性薄膜结合到框架和第一和第二压电元件，使得它覆盖每个压电元件和框架之间的至少一个间隙。压电元件的另一端部是自由端部，并且彼此面对地间隔开。

9. 发明授权

US06583490B2 One time programmable semiconductor nonvolatile memory device and method for production of same 有权
公开(公告)号：US06583490B2
公开(公告)日：2003-06-24
申请号：US09888534
申请日：2001-06-26
申请人： Yoshiaki Hagiwara , Hideaki Kuroda , Michitaka Kubota , Akira Nakagawara
发明人： Yoshiaki Hagiwara , Hideaki Kuroda , Michitaka Kubota , Akira Nakagawara
IPC分类号： H01L2900
CPC分类号： G11C17/16 , G11C2213/33 , G11C2213/71 , G11C2213/77 , G11C2213/79 , H01L27/112 , H01L2224/48091 , H01L2225/06568 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor nonvolatile memory device improving reproducibility and reliability of insulation breakage of a silicon oxide film and capable of reducing the manufacturing cost and a method for production of the same, wherein each of the memory cells arranged in a matrix form has an insulating film breakage type fuse comprising an impurity region of a first conductivity type formed on a semiconductor substrate, a first insulating film formed on the semiconductor substrate while covering the impurity region, an opening formed in the first insulating film so as to reach the impurity region, and a first semiconductor layer of a first conductivity type, a second insulating film, and a second semiconductor layer of a second conductivity type successively stacked in the opening from the impurity region side, or has an insulating film breakage type fuse comprising an impurity region of a first conductivity type in the first semiconductor layer having an SOI structure, a first insulating film on the SOI layer, an opening reaching the impurity region, and a second insulating film and a second semiconductor layer of a second conductivity type stacked in the opening.

10. 发明授权

US5825059A Semiconductor device and an interconnection structure of same 失效
标题翻译：半导体器件及其互连结构
公开(公告)号：US5825059A
公开(公告)日：1998-10-20
申请号：US791271
申请日：1997-01-30
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L21/28 , H01L21/768 , H01L21/8242 , H01L27/108 , H01L29/417 , H01L29/45 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/10852 , H01L29/41775 , H01L29/456
摘要： A connection hole of a semiconductor device having a structure of preventing the connection hole from being short-circuited or degraded in dielectric strength even if there occurs misalignment when an opening portion is formed in an interlayer insulating film at a position over a conductive layer for forming the opening portion. The connection hole includes an inner wall on which an insulating film protected by a side wall made from non-crystal silicon is formed.
摘要翻译：即使在形成导电层的位置上的层间绝缘膜中形成开口部时发生未对准的结构，也可以使用具有防止连接孔短路或劣化的结构的半导体装置的连接孔开口部分。连接孔包括内壁，其上形成有由非晶硅制成的侧壁保护的绝缘膜。

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