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1. 发明授权

US06440820B1 Process flow for ARS mover using selenidation wafer bonding after processing a media side of a rotor wafer 失效
标题翻译：在处理转子晶片的介质侧之后使用硒化晶片接合的ARS移动器的工艺流程
公开(公告)号：US06440820B1
公开(公告)日：2002-08-27
申请号：US09860452
申请日：2001-05-21
申请人： Heon Lee , Chung-Ching Yang , Peter Hartwell
发明人： Heon Lee , Chung-Ching Yang , Peter Hartwell
IPC分类号： H01L2130
CPC分类号： G11B9/1418 , B82Y10/00 , G01Q80/00 , G11B9/1463
摘要： An improved process flow for an atomic resolution storage (ARS) system deposits conductive electrodes, together with a protective layer, on a media side of a rotor wafer before most of other device processing, thus preserving a surface for ARS storage media from subsequent wafer thinning process. CMOS circuitry is also formed in a stator wafer at a later stage. Therefore, the CMOS circuitry is less likely to be damaged by heat processing. In addition, processing of the media side of the rotor wafer may be performed with loosened thermal budget. Finally, because the media side of the rotor wafer is processed before wafer bonding of the rotor wafer and the stator wafer, there is less probability of degradation of the wafer bonding. Therefore, device yield may be enhanced, leading to lower manufacturing cost.
摘要翻译：原子分辨率存储（ARS）系统的改进的处理流程在其他器件处理之前大部分其它器件处理之前，将转移晶片的介质侧上的导电电极与保护层一起放置在一起，从而保留了ARS存储介质从后续晶片变薄的表面处理。在稍后阶段也在定子晶片中形成CMOS电路。因此，CMOS电路不太可能被热处理所损坏。此外，可以以松散的热量预算来执行转子晶片的介质侧的处理。最后，因为转子晶片的介质侧在转子晶片和定子晶片的晶片接合之前被处理，所以晶片键合的劣化的可能性降低。因此，可以提高装置产量，导致制造成本降低。

2. 发明授权

US06621096B2 Device isolation process flow for ARS system 有权
公开(公告)号：US06621096B2
公开(公告)日：2003-09-16
申请号：US09860524
申请日：2001-05-21
申请人： Heon Lee , Chung-Ching Yang , Peter Hartwell
发明人： Heon Lee , Chung-Ching Yang , Peter Hartwell
IPC分类号： H01L2906
CPC分类号： B82Y10/00 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B9/149 , H01L21/764 , Y10S977/723
摘要： A device isolation process flow for an atomic resolution storage (ARS) system inserts device isolation into a process flow of the ARS system so that diodes may be electrically insulated from one another to improve signal to noise ratio. In addition, since most harsh processing is done prior to depositing a phase change layer, which stores data bits, process damage to the phase change layer may be minimized.

3. 发明授权

US06664193B2 Device isolation process flow for ARS system 有权
公开(公告)号：US06664193B2
公开(公告)日：2003-12-16
申请号：US10264569
申请日：2002-10-03
申请人： Heon Lee , Chung-Ching Yang , Peter Hartwell
发明人： Heon Lee , Chung-Ching Yang , Peter Hartwell
IPC分类号： H01L21302
CPC分类号： B82Y10/00 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B9/149 , H01L21/764 , Y10S977/723
摘要： A device isolation process flow for an atomic resolution storage (ARS) system inserts device isolation into a process flow of the ARS system so that diodes may be electrically insulated from one another to improve signal to noise ratio. In addition, since most harsh processing is done prior to depositing a phase change layer, which stores data bits, process damage to the phase change layer may be minimized.

4. 发明授权

US06436794B1 Process flow for ARS mover using selenidation wafer bonding before processing a media side of a rotor wafer 失效
标题翻译：在处理转子晶片的介质侧之前，使用硒化晶片接合的ARS移动器的工艺流程
公开(公告)号：US06436794B1
公开(公告)日：2002-08-20
申请号：US09860453
申请日：2001-05-21
申请人： Heon Lee , Chung-Ching Yang , Peter Hartwell
发明人： Heon Lee , Chung-Ching Yang , Peter Hartwell
IPC分类号： H01L2130
CPC分类号： G11B9/1436 , B81C1/00896 , B82Y10/00 , G01Q80/00 , G11B9/10 , G11B9/1463 , H01L21/68 , H01L25/50 , H01L2924/0002 , H01L2924/00
摘要： An improved process flow for an atomic resolution storage (ARS) system deposits conductive electrodes on a media side of a rotor wafer before wafer thinning process, i.e., grinding and CMP, thus protecting the conductive electrodes on a media surface from the grinding process. In addition, the CMOS circuitry is formed in a stator wafer at a relatively later stage. Therefore, the CMOS circuitry is less likely to be damaged by heat processing. In addition, some of the necessary processing may be performed with loosened thermal budget. Finally, because wafer bonding of the rotor wafer and the stator wafer is performed at a later stage, there is less probability of degradation of the wafer bonding. Accordingly, device yield may be enhanced, leading to lower manufacturing cost.
摘要翻译：用于原子分辨率存储（ARS）系统的改进的工艺流程在晶片变薄处理（即研磨和CMP）之前在转子晶片的介质侧上沉积导电电极，从而保护介质表面上的导电电极免受研磨过程。此外，CMOS电路在相对较晚的阶段形成在定子晶片中。因此，CMOS电路不太可能被热处理所损坏。另外，一些必要的处理可以用松散的热预算执行。最后，由于转子晶片和定子晶片的晶片接合在稍后的阶段进行，所以晶片接合的劣化的可能性降低。因此，可以提高装置产量，从而降低制造成本。

5. 发明授权

US06900468B2 Indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide phase-change media for ultra-high-density data-storage devices 失效
标题翻译：用于超高密度数据存储装置的铟硫族化物，镓硫族化物和铟镓硫族化物相变介质
公开(公告)号：US06900468B2
公开(公告)日：2005-05-31
申请号：US09789458
申请日：2001-02-20
申请人： Alison Chalken , Gary Gibson , Heon Lee , Krysztof Nauka , Chung-Ching Yang
发明人： Alison Chalken , Gary Gibson , Heon Lee , Krysztof Nauka , Chung-Ching Yang
IPC分类号： G11B11/00 , G11C11/56 , G11C16/02 , H01L27/10 , H01L27/105 , H01L31/0248 , H01L45/00 , H01L27/15
CPC分类号： G11B7/2437 , G11B7/2433 , G11B2007/2431 , G11B2007/24316 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/04
摘要： Ultra-high-density data-storage media employing indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide films to form bit-storage regions that act as photoconductive, photovoltaic, or photoluminescent semiconductor devices that produce electrical signals when exposed to electromagnetic radiation, or to form bit-storage regions that act as cathodoconductive, cathodovoltaic, or cathodoluminescent semiconductor devices that produce electrical signals when exposed to electron beams. Two values of a bit are represented by two solid phases of the data-storage medium, a crystalline phase and an amorphous phase, with transition between the two phases effected by heating the bit storage region.
摘要翻译：使用铟硫属化物，镓硫族化物和铟镓硫族化物膜的超高密度数据存储介质，以形成充当用于在暴露于电磁辐射时产生电信号的光电导，光伏或光致发光半导体器件的位存储区域;或以形成用作当暴露于电子束时产生电信号的阴极导电，阴极伏安或阴极发光半导体器件的位存储区域。位的两个值由数据存储介质的两个固相，晶相和非晶相表示，通过加热位存储区域而在两相之间转变。

6. 发明授权

US06980507B2 Luminescence-phase change based data storage 有权
标题翻译：基于发光相变的数据存储
公开(公告)号：US06980507B2
公开(公告)日：2005-12-27
申请号：US10231044
申请日：2002-08-30
申请人： Gary A. Gibson , Krzysztof Nauka , Chung-Ching Yang
发明人： Gary A. Gibson , Krzysztof Nauka , Chung-Ching Yang
IPC分类号： G11B9/10 , G11B9/00 , G11B11/00
CPC分类号： B82Y10/00 , G11B9/10 , G11B9/14 , G11B9/149 , G11B11/00 , G11B2005/0021
摘要： An ultra-high-density data storage device that relies on optical signals. The device includes a luminescent layer that emits light when stimulated by an electron beam. The device also includes a phase-change layer that contains data bits that may absorb or reflect the stimulated light before the light reaches a detector. Also, a method of data storage and retrieval that includes writing data bits in the phase-change layer, stimulating emissions in the luminescent layer, and reading data bits by monitoring the amount of light that reaches the detector.
摘要翻译：一种依赖于光信号的超高密度数据存储设备。该装置包括当被电子束刺激时发光的发光层。该装置还包括相变层，其包含在光到达检测器之前可以吸收或反射受激光的数据位。另外，一种数据存储和检索方法，包括在相变层中写入数据位，刺激发光层中的发射，以及通过监视到达检测器的光量来读取数据位。

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