专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120001502A1 Multi-unit Modular Stackable Switched Reluctance Motor System with Parallely Excited Low Reluctance Circumferential Magnetic Flux loops for High Torque Density Generation 审中-公开
标题翻译：具有并联励磁低阻抗的多单元模块化可堆叠开关磁阻电机系统，用于高扭矩密度发电
公开(公告)号：US20120001502A1
公开(公告)日：2012-01-05
申请号：US13174551
申请日：2011-06-30
申请人： Yee-Chun Lee , Chung Ching Yang
发明人： Yee-Chun Lee , Chung Ching Yang
IPC分类号： H02K37/08
CPC分类号： H02K19/103 , H02K16/00 , H02K2201/12 , H02K2213/12
摘要： The present invention is a apparatus of multi-unit modular stackable switched reluctance motor system with parallely excited low reluctance circumferential magnetic flux loops for high torque density generation. For maximized benefits and advanced motor features, the present invention takes full combined advantages of both SRM architecture and “Axial Flux” architecture by applying “Axial Flux” architecture into SRM design without using any permanent magnet, by modularizing and stacking the “Axial Flux” SRM design for easy configuration and customization to satisfy various drive torque requirements and broad applications, and by incorporating an en energy recovery transformer for minimizing switching circuitry thus further lowering the cost and further increasing the reliability and robustness. Unlike prior arts, the present invention does not use any permanent magnet and this “Axial Flux” SRM system is modularized and stackable with many benefits.
摘要翻译：本发明是一种具有并联激励的低磁阻圆周磁通回路的多单元模块化可堆叠开关磁阻电动机系统的装置，用于高扭矩密度产生。为了实现最大化的优点和先进的电机特性，本发明通过在不使用任何永磁体的情况下将“轴向通量”结构应用于SRM设计，通过模块化和堆叠“轴向通量”来充分利用SRM架构和“轴向通量” SRM设计易于配置和定制，以满足各种驱动扭矩要求和广泛的应用，并通过结合能量回收变压器来最小化开关电路，从而进一步降低成本，进一步提高可靠性和鲁棒性。不同于现有技术，本发明不使用任何永磁体，并且这种“轴向通量”SRM系统具有许多优点的模块化和堆叠。

2. 发明授权

US08003980B2 Layered electro-organic devices with crosslinked polymer and methods of preparing the same 有权
标题翻译：具有交联聚合物的分层电 - 有机器件及其制备方法
公开(公告)号：US08003980B2
公开(公告)日：2011-08-23
申请号：US11700447
申请日：2007-01-30
申请人： Xia Sheng , Zhang-Lin Zhou , Krzysztof Nauka , Chung Ching Yang
发明人： Xia Sheng , Zhang-Lin Zhou , Krzysztof Nauka , Chung Ching Yang
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/0043 , H01L51/0037 , H01L51/0039 , H01L51/56 , H01L2251/308 , Y02E10/549 , Y10T428/2495
摘要： The present invention is drawn to a layered organic device, and a method of forming the same. The method includes steps of applying a first solvent-containing organic layer to a substrate and removing solvent from the first solvent-containing organic layer to form a first solidified organic layer. Additional steps include applying a second solvent-containing organic layer to the first solidified organic layer and removing solvent from the second solvent-containing organic layer to form a second solidified organic layer. The first solidified organic layer can be crosslinked, which suppresses negative impact to components in the first solidified organic layer when the solvent of the second solvent-containing organic layer is deposited on the first solidified organic layer.
摘要翻译：本发明涉及层状有机器件及其形成方法。该方法包括将第一含溶剂的有机层施加到基底上并从第一含溶剂的有机层除去溶剂以形成第一固化有机层的步骤。附加步骤包括将第二含溶剂的有机层施加到第一固化有机层并从第二含溶剂的有机层除去溶剂以形成第二固化的有机层。当第一固化有机层的溶剂沉积在第一固化有机层上时，第一固化有机层可以交联，这抑制了对第一固化有机层中的组分的负面影响。

3. 发明授权

US07185973B2 Assembly for material deposition 有权
标题翻译：装配材料沉积
公开(公告)号：US07185973B2
公开(公告)日：2007-03-06
申请号：US10954263
申请日：2004-10-01
申请人： Gary A. Gibson , Krzysztof Nauka , Chung Ching Yang
发明人： Gary A. Gibson , Krzysztof Nauka , Chung Ching Yang
IPC分类号： B41J2/09 , B41J2/02
CPC分类号： B41J2/02 , B41J2/09 , H05K3/1241
摘要： An assembly for depositing material onto a substrate includes a reservoir containing the material. The reservoir also includes a nozzle through which the material is jetted and formed into droplets. The droplets travel through flight paths prior to deposition onto the substrate. The assembly includes a charging ring for inducing an electrical charge to one or more of the droplets and a plurality of deflection plates for controlling the flight paths of the droplets. In addition, the assembly also includes a droplet manipulating device configured to manipulate the droplets at least one of during the flight paths and after deposition of the droplets onto the substrate.
摘要翻译：用于在衬底上沉积材料的组件包括容纳该材料的容器。储存器还包括喷嘴，材料通过喷嘴喷射并形成液滴。在沉积到基板上之前，液滴通过飞行路径行进。该组件包括用于对一个或多个液滴引起电荷的充电环和用于控制液滴的飞行路径的多个偏转板。另外，组件还包括液滴操纵装置，其被构造成在飞行路径期间和在将液滴沉积到基板上之后至少一个操纵液滴。

4. 发明授权

US06900468B2 Indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide phase-change media for ultra-high-density data-storage devices 失效
标题翻译：用于超高密度数据存储装置的铟硫族化物，镓硫族化物和铟镓硫族化物相变介质
公开(公告)号：US06900468B2
公开(公告)日：2005-05-31
申请号：US09789458
申请日：2001-02-20
申请人： Alison Chalken , Gary Gibson , Heon Lee , Krysztof Nauka , Chung-Ching Yang
发明人： Alison Chalken , Gary Gibson , Heon Lee , Krysztof Nauka , Chung-Ching Yang
IPC分类号： G11B11/00 , G11C11/56 , G11C16/02 , H01L27/10 , H01L27/105 , H01L31/0248 , H01L45/00 , H01L27/15
CPC分类号： G11B7/2437 , G11B7/2433 , G11B2007/2431 , G11B2007/24316 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/04
摘要： Ultra-high-density data-storage media employing indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide films to form bit-storage regions that act as photoconductive, photovoltaic, or photoluminescent semiconductor devices that produce electrical signals when exposed to electromagnetic radiation, or to form bit-storage regions that act as cathodoconductive, cathodovoltaic, or cathodoluminescent semiconductor devices that produce electrical signals when exposed to electron beams. Two values of a bit are represented by two solid phases of the data-storage medium, a crystalline phase and an amorphous phase, with transition between the two phases effected by heating the bit storage region.
摘要翻译：使用铟硫属化物，镓硫族化物和铟镓硫族化物膜的超高密度数据存储介质，以形成充当用于在暴露于电磁辐射时产生电信号的光电导，光伏或光致发光半导体器件的位存储区域;或以形成用作当暴露于电子束时产生电信号的阴极导电，阴极伏安或阴极发光半导体器件的位存储区域。位的两个值由数据存储介质的两个固相，晶相和非晶相表示，通过加热位存储区域而在两相之间转变。

5. 发明申请

US20050023547A1 MEMS having a three-wafer structure 有权
标题翻译：具有三晶片结构的MEMS
公开(公告)号：US20050023547A1
公开(公告)日：2005-02-03
申请号：US10630769
申请日：2003-07-31
申请人： Peter Hartwell , Storrs Hoen , David Horsley , Chung Ching Yang , Paul Merchant , Carl Taussig , Gail O'Neill-Merchant
发明人： Peter Hartwell , Storrs Hoen , David Horsley , Chung Ching Yang , Paul Merchant , Carl Taussig , Gail O'Neill-Merchant
IPC分类号： G01P15/125 , B81B3/00 , B81B5/00 , B81B7/00 , B81B7/02 , H01L29/82 , H01L33/00
CPC分类号： B81B7/0041 , B81B2201/0235 , B81C2201/019 , B81C2203/019 , G01P2015/082
摘要： A microelectromechanical system includes a first wafer, a second wafer including a moveable portion, and a third wafer. The movable portion is movable between the first wafer and the third wafer. The first wafer, the second wafer, and the third wafer are bonded together.
摘要翻译：微机电系统包括第一晶片，包括可移动部分的第二晶片和第三晶片。可移动部分可在第一晶片和第三晶片之间移动。第一晶片，第二晶片和第三晶片接合在一起。

6. 发明授权

US06664193B2 Device isolation process flow for ARS system 有权
公开(公告)号：US06664193B2
公开(公告)日：2003-12-16
申请号：US10264569
申请日：2002-10-03
申请人： Heon Lee , Chung-Ching Yang , Peter Hartwell
发明人： Heon Lee , Chung-Ching Yang , Peter Hartwell
IPC分类号： H01L21302
CPC分类号： B82Y10/00 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B9/149 , H01L21/764 , Y10S977/723
摘要： A device isolation process flow for an atomic resolution storage (ARS) system inserts device isolation into a process flow of the ARS system so that diodes may be electrically insulated from one another to improve signal to noise ratio. In addition, since most harsh processing is done prior to depositing a phase change layer, which stores data bits, process damage to the phase change layer may be minimized.

7. 发明授权

US06537846B2 Substrate bonding using a selenidation reaction 失效
公开(公告)号：US06537846B2
公开(公告)日：2003-03-25
申请号：US09823550
申请日：2001-03-30
申请人： Heon Lee , Chung Ching Yang
发明人： Heon Lee , Chung Ching Yang
IPC分类号： H01L2106
CPC分类号： H01L21/2007 , H01L21/76251
摘要： A selenidation reaction for bonding one or more active substrates to a base substrate is disclosed. A bonded-substrate is fabricated by forming a first multi-stacked layer of selenium and indium on a bonding surface of an active substrate and forming a second multi-stacked layer of selenium and indium on a mounting surface of a base substrate. The first and second multi-stacked layers are placed into contact with each other with substantially no pressure. Then the active substrate and the base substrate are bonded to each other by annealing them in an inert ambient to form an indium-selenium compound bond layer that adhesively bonds the substrates to each other. The annealing can occur at a lower temperature than prior wafer-bonding processes and the first and second multi-stacked layers can be deposited over a wide range of relatively low temperatures including room temperature. Additionally, tellurium can be added to the selenium of either one or both of the first and second multi-stacked layers to reduce the annealing temperature and to form an indium-selenium-tellurium compound bond layer that adhesively bonds the substrates to each other. Elemental compounds or amorphous compounds can be used for the materials of the first and second multi-stacked layers to form a polycrystalline or amorphous compound bond layer respectively. One advantage of the compound bond layer is that it can be dissolved using a selective wet etching material so that the active substrate and the base substrate can be non-destructively detached from each other.

8. 发明申请

US20110278560A1 UV LIGHT-EMISSIVE FLUORENE-BASED COPOLYMERS 有权
标题翻译：紫外线发光荧光基共聚物
公开(公告)号：US20110278560A1
公开(公告)日：2011-11-17
申请号：US13146398
申请日：2009-01-30
申请人： Zhang-Lin Zhou , Chung Ching Yang
发明人： Zhang-Lin Zhou , Chung Ching Yang
IPC分类号： H01L51/54 , C08G73/00 , C08G63/66 , C08G73/06 , C08G79/00 , C08G77/60 , C08G63/08 , C08G69/40 , C08G75/12
CPC分类号： H01L51/0043 , C08G61/02 , C08G61/12 , C08G2261/314 , C08G2261/3142 , C08G2261/316 , C08G2261/3162 , C08G2261/5222 , C09B69/008 , C09B69/109 , H01L51/0039 , Y10S428/917
摘要： A fluorene-based copolymer of formula I includes a monomeric unit that includes a fluorene group and at least one steric hindering chemical group to provide sufficient steric interaction such that the spatial conformation of the fluorene-based copolymer is substantially non-planar. The fluorene-based copolymer exhibits UV light emission.
摘要翻译：式I的基于芴的共聚物包括包含芴基和至少一个空间位阻化学基团的单体单元以提供足够的空间相互作用，使得基于芴的共聚物的空间构象基本上是非平面的。芴基共聚物表现出紫外光发射。

9. 发明授权

US06930368B2 MEMS having a three-wafer structure 有权
公开(公告)号：US06930368B2
公开(公告)日：2005-08-16
申请号：US10630769
申请日：2003-07-31
申请人： Peter G. Hartwell , Storrs T. Hoen , David Horsley , Chung Ching Yang , Paul P. Merchant , Carl P. Taussig
发明人： Peter G. Hartwell , Storrs T. Hoen , David Horsley , Chung Ching Yang , Paul P. Merchant , Carl P. Taussig
IPC分类号： G01P15/125 , B81B3/00 , B81B5/00 , B81B7/00 , B81B7/02 , H01L29/82 , H01L33/00
CPC分类号： B81B7/0041 , B81B2201/0235 , B81C2201/019 , B81C2203/019 , G01P2015/082
摘要： A microelectromechanical system includes a first wafer, a second wafer including a moveable portion, and a third wafer. The movable portion is movable between the first wafer and the third wafer. The first wafer, the second wafer, and the third wafer are bonded together.

10. 发明授权

US06621096B2 Device isolation process flow for ARS system 有权
公开(公告)号：US06621096B2
公开(公告)日：2003-09-16
申请号：US09860524
申请日：2001-05-21
申请人： Heon Lee , Chung-Ching Yang , Peter Hartwell
发明人： Heon Lee , Chung-Ching Yang , Peter Hartwell
IPC分类号： H01L2906
CPC分类号： B82Y10/00 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B9/149 , H01L21/764 , Y10S977/723
摘要： A device isolation process flow for an atomic resolution storage (ARS) system inserts device isolation into a process flow of the ARS system so that diodes may be electrically insulated from one another to improve signal to noise ratio. In addition, since most harsh processing is done prior to depositing a phase change layer, which stores data bits, process damage to the phase change layer may be minimized.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式