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1. 发明授权

US08629012B2 Method for forming antimony-based FETs monolithically 有权
标题翻译：一体形成锑基FET的方法
公开(公告)号：US08629012B2
公开(公告)日：2014-01-14
申请号：US13595797
申请日：2012-08-27
申请人： Heng-Kuang Lin , Pei-Chin Chiu , Jen-Inn Chyi , Han-Chieh Ho , Clement Hsingjen Wann , Chih-Hsin Ko , Cheng-Hsien Wu
发明人： Heng-Kuang Lin , Pei-Chin Chiu , Jen-Inn Chyi , Han-Chieh Ho , Clement Hsingjen Wann , Chih-Hsin Ko , Cheng-Hsien Wu
IPC分类号： H01L21/338
CPC分类号： H01L29/205 , B82Y10/00 , H01L21/8252 , H01L27/085 , H01L27/0883 , H01L27/092 , H01L29/122 , H01L29/42316 , H01L29/42356 , H01L29/66462 , H01L29/7783
摘要： An integrated circuit structure includes a substrate and a first and a second plurality of III-V semiconductor layers. The first plurality of III-V semiconductor layers includes a first bottom barrier over the substrate; a first channel layer over the first bottom barrier; and a first top barrier over the first channel layer. A first field-effect transistor (FET) includes a first channel region, which includes a portion of the first channel layer. The second plurality of III-V semiconductor layers is over the first plurality of III-V semiconductor layers and includes a second bottom barrier; a second channel layer over the second bottom barrier; and a second top barrier over the second channel layer. A second FET includes a second channel region, which includes a portion of the second channel layer.
摘要翻译：集成电路结构包括基板和第一和第二多个III-V半导体层。所述第一多个III-V半导体层包括在所述衬底上的第一底部阻挡层; 在第一底部屏障上的第一通道层; 以及第一通道层上的第一顶部势垒。第一场效应晶体管（FET）包括第一沟道区，其包括第一沟道层的一部分。第二多个III-V半导体层在第一多个III-V半导体层之上，并且包括第二底部屏障; 在第二底部屏障上的第二通道层; 以及在第二通道层上的第二顶部阻挡层。第二FET包括第二沟道区，其包括第二沟道层的一部分。

2. 发明申请

US20110180846A1 Method for Forming Antimony-Based FETs Monolithically 有权
标题翻译：一种用于形成锑基FET的方法
公开(公告)号：US20110180846A1
公开(公告)日：2011-07-28
申请号：US12694002
申请日：2010-01-26
申请人： Heng-Kuang Lin , Pei-Chin Chiu , Jen-Inn Chyi , Han-Chieh Ho , Clement Hsingjen Wann , Chih-Hsin Ko , Cheng-Hsien Wu
发明人： Heng-Kuang Lin , Pei-Chin Chiu , Jen-Inn Chyi , Han-Chieh Ho , Clement Hsingjen Wann , Chih-Hsin Ko , Cheng-Hsien Wu
IPC分类号： H01L27/092 , H01L29/20
CPC分类号： H01L29/205 , B82Y10/00 , H01L21/8252 , H01L27/085 , H01L27/0883 , H01L27/092 , H01L29/122 , H01L29/42316 , H01L29/42356 , H01L29/66462 , H01L29/7783
摘要： An integrated circuit structure includes a substrate and a first and a second plurality of III-V semiconductor layers. The first plurality of III-V semiconductor layers includes a first bottom barrier over the substrate; a first channel layer over the first bottom barrier; and a first top barrier over the first channel layer. A first field-effect transistor (FET) includes a first channel region, which includes a portion of the first channel layer. The second plurality of III-V semiconductor layers is over the first plurality of III-V semiconductor layers and includes a second bottom barrier; a second channel layer over the second bottom barrier; and a second top barrier over the second channel layer. A second FET includes a second channel region, which includes a portion of the second channel layer.
摘要翻译：集成电路结构包括基板和第一和第二多个III-V半导体层。所述第一多个III-V半导体层包括在所述衬底上的第一底部阻挡层; 在第一底部屏障上的第一通道层; 以及第一通道层上的第一顶部势垒。第一场效应晶体管（FET）包括第一沟道区，其包括第一沟道层的一部分。第二多个III-V半导体层在第一多个III-V半导体层之上，并且包括第二底部屏障; 在第二底部屏障上的第二通道层; 以及在第二通道层上的第二顶部阻挡层。第二FET包括第二沟道区，其包括第二沟道层的一部分。

3. 发明授权

US08253167B2 Method for forming antimony-based FETs monolithically 有权
标题翻译：一体形成锑基FET的方法
公开(公告)号：US08253167B2
公开(公告)日：2012-08-28
申请号：US12694002
申请日：2010-01-26
申请人： Heng-Kuang Lin , Pei-Chin Chiu , Jen-Inn Chyi , Han-Chieh Ho , Clement Hsingjen Wann , Chih-Hsin Ko , Cheng-Hsien Wu
发明人： Heng-Kuang Lin , Pei-Chin Chiu , Jen-Inn Chyi , Han-Chieh Ho , Clement Hsingjen Wann , Chih-Hsin Ko , Cheng-Hsien Wu
IPC分类号： H01L27/092
CPC分类号： H01L29/205 , B82Y10/00 , H01L21/8252 , H01L27/085 , H01L27/0883 , H01L27/092 , H01L29/122 , H01L29/42316 , H01L29/42356 , H01L29/66462 , H01L29/7783
摘要： An integrated circuit structure includes a substrate and a first and a second plurality of III-V semiconductor layers. The first plurality of III-V semiconductor layers includes a first bottom barrier over the substrate; a first channel layer over the first bottom barrier; and a first top barrier over the first channel layer. A first field-effect transistor (FET) includes a first channel region, which includes a portion of the first channel layer. The second plurality of III-V semiconductor layers is over the first plurality of III-V semiconductor layers and includes a second bottom barrier; a second channel layer over the second bottom barrier; and a second top barrier over the second channel layer. A second FET includes a second channel region, which includes a portion of the second channel layer.
摘要翻译：集成电路结构包括基板和第一和第二多个III-V半导体层。所述第一多个III-V半导体层包括在所述衬底上的第一底部阻挡层; 在第一底部屏障上的第一通道层; 以及第一通道层上的第一顶部势垒。第一场效应晶体管（FET）包括第一沟道区，其包括第一沟道层的一部分。第二多个III-V半导体层在第一多个III-V半导体层之上，并且包括第二底部屏障; 在第二底部屏障上的第二通道层; 以及在第二通道层上的第二顶部阻挡层。第二FET包括第二沟道区，其包括第二沟道层的一部分。

4. 发明申请

US20120329254A1 Method for Forming Antimony-Based FETs Monolithically 有权
标题翻译：一种用于形成锑基FET的方法
公开(公告)号：US20120329254A1
公开(公告)日：2012-12-27
申请号：US13595797
申请日：2012-08-27
申请人： Heng-Kuang Lin , Pei-Chin Chiu , Jen-Inn Chyi , Han-Chieh Ho , Clement Hsingjen Wann , Chih-Hsin Ko , Cheng-Hsien Wu
发明人： Heng-Kuang Lin , Pei-Chin Chiu , Jen-Inn Chyi , Han-Chieh Ho , Clement Hsingjen Wann , Chih-Hsin Ko , Cheng-Hsien Wu
IPC分类号： H01L21/20
CPC分类号： H01L29/205 , B82Y10/00 , H01L21/8252 , H01L27/085 , H01L27/0883 , H01L27/092 , H01L29/122 , H01L29/42316 , H01L29/42356 , H01L29/66462 , H01L29/7783
摘要： An integrated circuit structure includes a substrate and a first and a second plurality of III-V semiconductor layers. The first plurality of III-V semiconductor layers includes a first bottom barrier over the substrate; a first channel layer over the first bottom barrier; and a first top barrier over the first channel layer. A first field-effect transistor (FET) includes a first channel region, which includes a portion of the first channel layer. The second plurality of III-V semiconductor layers is over the first plurality of III-V semiconductor layers and includes a second bottom barrier; a second channel layer over the second bottom barrier; and a second top barrier over the second channel layer. A second FET includes a second channel region, which includes a portion of the second channel layer.
摘要翻译：集成电路结构包括基板和第一和第二多个III-V半导体层。所述第一多个III-V半导体层包括在所述衬底上的第一底部阻挡层; 在第一底部屏障上的第一通道层; 以及第一通道层上的第一顶部势垒。第一场效应晶体管（FET）包括第一沟道区，其包括第一沟道层的一部分。第二多个III-V半导体层在第一多个III-V半导体层之上，并且包括第二底部屏障; 在第二底部屏障上的第二通道层; 以及在第二通道层上的第二顶部阻挡层。第二FET包括第二沟道区，其包括第二沟道层的一部分。

5. 发明授权

US08594474B2 Mach-Zehnder wavelength division multiplexer having flat passband and low crosstalk 有权
标题翻译： Mach-Zehnder波分复用器具有平坦的通带和低串扰
公开(公告)号：US08594474B2
公开(公告)日：2013-11-26
申请号：US13344657
申请日：2012-01-06
申请人： Hung-Chih Lu , Jen-Inn Chyi
发明人： Hung-Chih Lu , Jen-Inn Chyi
IPC分类号： G02B6/34 , G02F1/295
CPC分类号： G02B6/29353
摘要： A Mach-Zehnder wavelength division multiplexer (WDM) is provided. The WDM has a short length with flat passband and low crosstalk. Since passband is flattened, crosstalk is reduced and length of the WDM is shortened, the WDN can be used for optical communication and optical interconnection in a single chip.
摘要翻译：提供了一种马赫曾德尔波分多路复用器（WDM）。 WDM具有短通道，通带平坦，串扰低。由于通带扁平化，串扰减少，WDM长度缩短，WDN可用于单芯片中的光通信和光互连。

6. 发明授权

US08524583B2 Method for growing semipolar nitride 失效
标题翻译：生长半极性氮化物的方法
公开(公告)号：US08524583B2
公开(公告)日：2013-09-03
申请号：US13177330
申请日：2011-07-06
申请人： Jen-Inn Chyi , Hsueh-Hsing Liu , Hsien Yu Lin
发明人： Jen-Inn Chyi , Hsueh-Hsing Liu , Hsien Yu Lin
IPC分类号： H01L21/205
CPC分类号： H01L21/02639 , C30B23/025 , C30B23/04 , C30B25/04 , C30B25/186 , C30B29/403 , H01L21/02381 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02647 , H01L33/007 , H01L33/16 , H01L33/20
摘要： A method for growing a semipolar nitride comprises steps: forming a plurality of parallel discrete trenches on a silicon substrate, each discrete trenches having a first wall and a second wall, wherein a tilt angle is formed between the surface of the silicon substrate and the first wall; forming a buffer layer on the silicon substrate and the trenches, wherein the buffer layer on the first wall has a plurality of growing zones and a plurality of non-growing zones among the growing zones and complementary to the growing zones; forming a cover layer on the buffer layer and revealing the growing zones; and growing a semipolar nitride from the growing zones of the buffer layer and covering the cover layer. Thereby cracks caused by thermal stress between the silicon substrate and semipolar nitride are decreased and the quality of the semipolar nitride film is improved.
摘要翻译：用于生长半极性氮化物的方法包括以下步骤：在硅衬底上形成多个平行的离散沟槽，每个离散的沟槽具有第一壁和第二壁，其中在硅衬底的表面和第一壁之间形成倾斜角壁; 在所述硅衬底和所述沟槽上形成缓冲层，其中所述第一壁上的所述缓冲层在所述生长区中具有多个生长区和多个非生长区，并与所述生长区互补; 在缓冲层上形成覆盖层并露出生长区; 以及从缓冲层的生长区域生长半极性氮化物并覆盖覆盖层。由此，硅衬底和半极性氮化物之间的热应力引起的裂纹减少，并且提高了半极性氮化物膜的质量。

7. 发明授权

US08406579B2 Wavelength division multiplexing and optical modulation apparatus 有权
标题翻译：波分复用和光调制装置
公开(公告)号：US08406579B2
公开(公告)日：2013-03-26
申请号：US13038553
申请日：2011-03-02
申请人： Hung-Chih Lu , Jen-Inn Chyi
发明人： Hung-Chih Lu , Jen-Inn Chyi
IPC分类号： G02F1/295 , G02B6/34
CPC分类号： G02F1/3133 , G02F2001/311 , G02F2203/585
摘要： A wavelength division multiplexing and optical modulation apparatus includes at least two modulation region-added grating-assisted cross-state directional coupler units and a modulation region-added cross-state directional coupler. The modulation region-added grating-assisted cross-state directional coupler units and the modulation region-added cross-state directional coupler unit are connected to one another in serial. Each of the modulation region-added grating-assisted cross-state directional coupler units each includes a modulation region-added cross-state directional coupler, a grating and a modulation region. The modulation region-added cross-state directional coupler unit includes an output waveguide, an input waveguide and a modulation region.
摘要翻译：波分复用和光调制装置包括至少两个调制区域附加的光栅辅助交叉定向耦合器单元和调制区域增加的交叉定向耦合器。调制区域附加的光栅辅助交叉定向耦合器单元和调制区域增加的交叉定向耦合器单元彼此串联连接。调制区域附加光栅辅助交叉定向耦合器单元中的每一个均包括调制区域增加的交叉状态定向耦合器，光栅和调制区域。调制区域增加的交叉定向耦合器单元包括输出波导，输入波导和调制区域。

8. 发明申请

US20090298213A1 LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME 有权
公开(公告)号：US20090298213A1
公开(公告)日：2009-12-03
申请号：US12538427
申请日：2009-08-10
申请人： Chia-Ming LEE , Hung-Cheng Lin , Jen-Inn Chyi
发明人： Chia-Ming LEE , Hung-Cheng Lin , Jen-Inn Chyi
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/0242 , H01L21/02647 , H01L21/02658 , H01L33/22
摘要： The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies.

9. 发明申请

US20090162999A1 Method of Growing Nitride Semiconductor material 有权
标题翻译：生长氮化物半导体材料的方法
公开(公告)号：US20090162999A1
公开(公告)日：2009-06-25
申请号：US12014200
申请日：2008-01-15
申请人： Hung-Cheng LIN , Jen-Inn Chyi
发明人： Hung-Cheng LIN , Jen-Inn Chyi
IPC分类号： H01L21/36
CPC分类号： H01L21/0262 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L33/0062 , H01L33/06
摘要： A method of growing nitride semiconductor material and particularly a method of growing Indium nitride is disclosed can increase surface flatness of a nitride semiconductor material and decrease density of V-defects therein. Further, the method can increase light emission efficiency of a quantum well or quantum dots of the produced LED as well as greatly increase yield. The method is also applicable to the fabrications of electronic devices made of nitride semiconductor material and diodes of high breakdown voltage for rectification. The method can greatly increase surface flatness of semiconductor material for HBT, thereby increasing quality of the produced semiconductor devices.
摘要翻译：公开了一种生长氮化物半导体材料的方法，特别是生长氮化铟的方法可以增加氮化物半导体材料的表面平坦度并降低其中的V型缺陷的密度。此外，该方法可以提高所产生的LED的量子阱或量子点的发光效率，并且大大提高产量。该方法还适用于由氮化物半导体材料制成的电子器件和用于整流的高击穿电压的二极管的制造。该方法可以大大增加用于HBT的半导体材料的表面平坦度，从而提高所制造的半导体器件的质量。

10. 发明申请

US20060189019A1 Growth process of a crystalline gallium nitride based compound and semiconductor device including gallium nitride based compound 有权
标题翻译：包括氮化镓基化合物的结晶氮化镓基化合物和半导体器件的生长过程
公开(公告)号：US20060189019A1
公开(公告)日：2006-08-24
申请号：US11063479
申请日：2005-02-23
申请人： Chia-Ming Lee , Tsung Chen , I-Ling Chen , Yu-Chuan Liu , Jen-Inn Chyi
发明人： Chia-Ming Lee , Tsung Chen , I-Ling Chen , Yu-Chuan Liu , Jen-Inn Chyi
IPC分类号： H01L21/00
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02661
摘要： In a method of forming a crystalline GaN-based material, a first nucleation layer is formed on a substrate at a first temperature, followed with forming a second nucleation layer at a second temperature different from the first temperature. The first and second nucleation layers are composed of AlxInyGa(1-x-y)N. Subsequently, a layer of a crystalline GaN-based compound is epitaxy grown on the second nucleation layer.
摘要翻译：在形成结晶GaN基材料的方法中，在第一温度下在基板上形成第一成核层，随后在与第一温度不同的第二温度下形成第二成核层。第一和第二成核层由Al x Ga y（1-x-y）N组成。随后，在第二成核层上生长一层结晶的GaN基化合物外延生长。

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