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1. 发明申请

US20220093834A1 DISPLAY DEVICE 有权
公开(公告)号：US20220093834A1
公开(公告)日：2022-03-24
申请号：US17477357
申请日：2021-09-16
申请人： HUNG-CHENG LIN , HUNG-KUANG HSU , HUA-CHEN HSU
发明人： HUNG-CHENG LIN , HUNG-KUANG HSU , HUA-CHEN HSU
IPC分类号： H01L33/60 , H01L25/075 , H01L33/50
摘要： A light emitting-diode (LED) display device is provided. The display device comprises plural pixels arranged in array and each pixel includes at least one LED chip. The LED chip is disposed at a cavity of a black matrix (BM) layer and electrical connected to a transistor of a circuit substrate, wherein the transistor is below the BM layer.

2. 发明申请

US20120265206A1 MEDICAL DRILL 有权
标题翻译：医疗钻
公开(公告)号：US20120265206A1
公开(公告)日：2012-10-18
申请号：US13430310
申请日：2012-03-26
申请人： Jason Shiang Ching JANG , Pei Hua Tsai , Jia Bin Li , Hung Cheng Lin , Chih Chiang Fu
发明人： Jason Shiang Ching JANG , Pei Hua Tsai , Jia Bin Li , Hung Cheng Lin , Chih Chiang Fu
IPC分类号： A61B17/16
CPC分类号： A61B17/1615 , A61B17/16 , A61B2017/00831 , A61B2017/00836 , A61C1/00 , A61C3/02
摘要： A medical drill is disclosed, which is made of amorphous alloy, the amorphous alloy is zirconium amorphous alloy comprising 45 at % or above of zirconium, wherein the tensile strength of the medical drill is 1500-2500 Mpa, and the Vicker's hardness of the medical drill is 400-750. Moreover, a medical drill made of titanium amorphous alloy is also disclosed.
摘要翻译：公开了一种由非晶态合金制成的医用钻头，该非晶态合金是由锆的45原子％以上的锆的非晶合金，其中医用钻的拉伸强度为1500-2500Mpa，医疗器具的维氏硬度演练是400-750。此外，还公开了由钛非晶合金制成的医用钻头。

3. 发明授权

US07645624B2 Method for self bonding epitaxy 有权
标题翻译：自身结合外延的方法
公开(公告)号：US07645624B2
公开(公告)日：2010-01-12
申请号：US11980472
申请日：2007-10-31
申请人： Yu-Chuan Liu , Hung-Cheng Lin , Wen-Chieh Hsu , Chia-Ming Lee , Jenn-Hwa Fu
发明人： Yu-Chuan Liu , Hung-Cheng Lin , Wen-Chieh Hsu , Chia-Ming Lee , Jenn-Hwa Fu
IPC分类号： H01L21/00 , H01L21/76
CPC分类号： H01L33/22 , H01L21/02378 , H01L21/02381 , H01L21/02389 , H01L21/02395 , H01L21/0242 , H01L21/0254 , H01L21/02543 , H01L21/02639 , H01L21/02647 , H01L33/007
摘要： A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom surface of the recesses; filling the recesses with an Epi layer; then covering the protrusive portions and starting self bonding upwards the epitaxy to finish the Epi layer structure. Such a self bonding epitaxy growing technique can prevent cavity generation caused by parameter errors of the epitaxy and reduce defect density, and improve the quality of the Epi layer and increase internal quantum efficiency.
摘要翻译：一种用于自粘合外延的方法包括在半导体照明元件的衬底表面上形成钝化层; 蚀刻以形成具有位于其上的钝化层的凹部和突出部分; 开始在凹槽的底表面上形成外延; 用Epi层填充凹槽; 然后覆盖突起部分并开始自身向上附着外延以完成Epi层结构。这种自粘合外延生长技术可以防止由外延参数误差引起的空腔产生并降低缺陷密度，提高Epi层的质量并提高内部量子效率。

4. 发明授权

US07608532B2 Method of growing nitride semiconductor material 有权
标题翻译：生长氮化物半导体材料的方法
公开(公告)号：US07608532B2
公开(公告)日：2009-10-27
申请号：US12014200
申请日：2008-01-15
申请人： Hung-Cheng Lin , Jen-Inn Chyi
发明人： Hung-Cheng Lin , Jen-Inn Chyi
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： H01L21/0262 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L33/0062 , H01L33/06
摘要： A method of growing nitride semiconductor material and particularly a method of growing Indium nitride is disclosed can increase surface flatness of a nitride semiconductor material and decrease density of V-defects therein. Further, the method can increase light emission efficiency of a quantum well or quantum dots of the produced LED as well as greatly increase yield. The method is also applicable to the fabrications of electronic devices made of nitride semiconductor material and diodes of high breakdown voltage for rectification. The method can greatly increase surface flatness of semiconductor material for HBT, thereby increasing quality of the produced semiconductor devices.
摘要翻译：公开了一种生长氮化物半导体材料的方法，特别是生长氮化铟的方法可以增加氮化物半导体材料的表面平坦度并降低其中的V型缺陷的密度。此外，该方法可以提高所产生的LED的量子阱或量子点的发光效率，并且大大提高产量。该方法还适用于由氮化物半导体材料制成的电子器件和用于整流的高击穿电压的二极管的制造。该方法可以大大增加用于HBT的半导体材料的表面平坦度，从而提高所制造的半导体器件的质量。

5. 发明申请

US20090111202A1 Method for self bonding epitaxy 有权
标题翻译：自身结合外延的方法
公开(公告)号：US20090111202A1
公开(公告)日：2009-04-30
申请号：US11980472
申请日：2007-10-31
申请人： Yu-Chuan Liu , Hung-Cheng Lin , Wen-Chieh Hsu , Chia-Ming Lee , Jenn-Hwa Fu
发明人： Yu-Chuan Liu , Hung-Cheng Lin , Wen-Chieh Hsu , Chia-Ming Lee , Jenn-Hwa Fu
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L21/02378 , H01L21/02381 , H01L21/02389 , H01L21/02395 , H01L21/0242 , H01L21/0254 , H01L21/02543 , H01L21/02639 , H01L21/02647 , H01L33/007
摘要： A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom surface of the recesses; filling the recesses with an Epi layer; then covering the protrusive portions and starting self bonding upwards the epitaxy to finish the Epi layer structure. Such a self bonding epitaxy growing technique can prevent cavity generation caused by parameter errors of the epitaxy and reduce defect density, and improve the quality of the Epi layer and increase internal quantum efficiency.
摘要翻译：一种用于自粘合外延的方法包括在半导体照明元件的衬底表面上形成钝化层; 蚀刻以形成具有位于其上的钝化层的凹部和突出部分; 开始在凹槽的底表面上形成外延; 用Epi层填充凹槽; 然后覆盖突起部分并开始自身向上附着外延以完成Epi层结构。这种自粘合外延生长技术可以防止由外延参数误差引起的空腔产生并降低缺陷密度，提高Epi层的质量并提高内部量子效率。

6. 发明申请

US20120114932A1 THERMAL CONDUCTION DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：导热装置及其制造方法
公开(公告)号：US20120114932A1
公开(公告)日：2012-05-10
申请号：US13004437
申请日：2011-01-11
申请人： SHAO-CHUNG HU , HSING HUNG , HUNG-CHENG LIN , I-CHIAO LIN , CHIEN-MIN SUNG
发明人： SHAO-CHUNG HU , HSING HUNG , HUNG-CHENG LIN , I-CHIAO LIN , CHIEN-MIN SUNG
IPC分类号： B32B5/16 , B23K31/02
CPC分类号： C09K5/00 , B32B5/16 , B32B15/20 , B32B2264/10 , B32B2307/302 , H01L23/3732 , H01L23/3733 , H01L23/3736 , H01L2924/0002 , Y10T428/25 , H01L2924/00
摘要： A thermal conduction device and a method for fabricating the same are disclosed. Firstly, arrange a plurality of diamond particles on a plane according to a predetermined pattern to form a diamond particle monolayer. Next, apply a forming process on a metal material such that the metal material forms a metal matrix wrapping the diamond particles to form a composite body including the diamond particle monolayer embedded in the metal matrix. Next, stack a plurality of the composite bodies and perform a heating process to join the metal matrixes to each other to form the thermal conduction device. The device is characterized in arranging diamond particles on a plane to form a two-dimensional monolayer structure and manufactured via assembling the two-dimensional monolayer structures to form a three-dimensional multilayer structure. By controlling the arrangement of the diamond particles, the thermal conduction device can have superior thermal conduction performance.
摘要翻译：公开了一种导热装置及其制造方法。首先，根据预定图案在平面上布置多个金刚石颗粒以形成金刚石颗粒单层。接下来，在金属材料上施加成形工艺，使得金属材料形成包裹金刚石颗粒的金属基体，以形成包括嵌入在金属基体中的金刚石颗粒单层的复合体。接下来，堆叠多个复合体并进行加热处理以将金属基体彼此接合以形成导热装置。该装置的特征在于在平面上布置金刚石颗粒以形成二维单层结构，并通过组装二维单层结构制造以形成三维多层结构。通过控制金刚石颗粒的布置，导热装置可以具有优异的导热性能。

7. 发明申请

US20100295017A1 LIGHT EMITTING DIODE ELEMENT AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：发光二极管元件及其制造方法
公开(公告)号：US20100295017A1
公开(公告)日：2010-11-25
申请号：US12851607
申请日：2010-08-06
申请人： Hung-Cheng LIN , Chia-Ming Lee , Jen-Inn Chyi
发明人： Hung-Cheng LIN , Chia-Ming Lee , Jen-Inn Chyi
IPC分类号： H01L33/04 , H01L33/02 , H01L33/30
CPC分类号： H01L33/10 , H01L33/20
摘要： The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted.
摘要翻译：本发明公开了一种发光二极管（LED）元件及其制造方法，其可以提高LED的光提取效率，其中蚀刻基板以获得具有倾斜的自然晶体面的池，并且LED外延结构选择性地形成在盆地内。由此，得到具有多个倾斜的LED元件。通过倾斜，全内反射的概率降低，LED的光提取效率得到提升。

8. 发明申请

US20090159910A1 LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：发光二极管结构及其制造方法
公开(公告)号：US20090159910A1
公开(公告)日：2009-06-25
申请号：US11963558
申请日：2007-12-21
申请人： Hung-Cheng LIN , Chia-Ming Lee , Jen-Inn Chyi
发明人： Hung-Cheng LIN , Chia-Ming Lee , Jen-Inn Chyi
IPC分类号： H01L21/306 , H01L33/00
CPC分类号： H01L33/22
摘要： The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process.
摘要翻译：本发明公开了一种发光二极管结构及其制造方法。在本发明中，将基板放置在溶液中以在雕刻区域上形成化学反应层; 选择性地蚀刻雕刻区域以形成多个凹陷区域并形成多个凸区域; 在衬底的元件区域和雕刻区域上外延生长半导体层结构; 通过光刻工艺将元件区域上的半导体层结构制成LED元件。

9. 发明授权

US07445949B2 Method of manufacturing semiconductor laser device structure 失效
标题翻译：制造半导体激光器件结构的方法
公开(公告)号：US07445949B2
公开(公告)日：2008-11-04
申请号：US10710843
申请日：2004-08-06
申请人： Hung-Cheng Lin , Jen-Inn Chyi , Guan-Ting Chen
发明人： Hung-Cheng Lin , Jen-Inn Chyi , Guan-Ting Chen
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/2214
摘要： A method of manufacturing a semiconductor laser device is provided. First, a first mask layer is formed on an epitaxial structure to define a protrudent area in a ridge structure. Thereafter, a conformal second mask layer is formed over the epitaxial structure to cover the first mask layer. A third mask layer is formed over the second mask layer. The exposed second mask layer is removed. Using the first and the third mask layers as etching masks, a portion of the epitaxial structure is removed. The third mask layer and the remaining second mask layer are removed to form the ridge structure. An insulation layer is formed on the epitaxial structure and then the first mask layer is removed to expose the top surface of the protrudent area. A conductive layer is formed on the epitaxial structure such that it contacts with the top surface of the protrudent area.
摘要翻译：提供一种制造半导体激光器件的方法。首先，在外延结构上形成第一掩模层以限定脊结构中的突出区域。此后，在外延结构上形成保形第二掩模层以覆盖第一掩模层。在第二掩模层上形成第三掩模层。暴露的第二掩模层被去除。使用第一和第三掩模层作为蚀刻掩模，去除外延结构的一部分。去除第三掩模层和剩余的第二掩模层以形成脊结构。在外延结构上形成绝缘层，然后去除第一掩模层以暴露突出区域的顶表面。导电层形成在外延结构上，使得其与突出区域的顶表面接触。

10. 发明授权

US11296254B2 Diode device, display device and method for manufacturing the same 有权
公开(公告)号：US11296254B2
公开(公告)日：2022-04-05
申请号：US16917346
申请日：2020-06-30
申请人： Hung-Cheng Lin , Hung-Kuang Hsu , Hua-Chen Hsu
发明人： Hung-Cheng Lin , Hung-Kuang Hsu , Hua-Chen Hsu
IPC分类号： H01L33/14 , H01L25/075 , H01L25/16 , H01L33/00 , H01L33/38
摘要： A diode array is provided. The diode array includes a substrate and a plurality of light emitting diodes disposed on the substrate and arranged in an array, wherein each of the light emitting diodes includes a stack of functional layers comprising a first type semiconductor layer, a second type semiconductor layer, and a light emitting layer located between the first type semiconductor layer and the second type semiconductor layer, wherein at least one of the light emitting diodes includes: a first current limiting region abutting a vertically extending boundary of the second semiconductor layer; wherein, with respect to a top down view, the first current limiting region is formed about an outer edge of the light emitting diode and an outer perimeter of the first current limiting region is equal to or less than 400 micrometers (μm).

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