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1. 发明授权

US07628897B2 Reactive ion etching for semiconductor device feature topography modification 失效
标题翻译：半导体器件的反应离子蚀刻特征地形修改
公开(公告)号：US07628897B2
公开(公告)日：2009-12-08
申请号：US10660813
申请日：2003-09-12
申请人： Hemant P. Mungekar , Anjana M. Patel , Manoj Vellaikal , Anchuan Wang , Bikram Kapoor
发明人： Hemant P. Mungekar , Anjana M. Patel , Manoj Vellaikal , Anchuan Wang , Bikram Kapoor
IPC分类号： C23C14/35 , C23C16/00 , H01L21/311
CPC分类号： C23C16/045 , C23C16/401 , C23C16/505 , H01L21/02129 , H01L21/02131 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/31625 , H01L21/31633
摘要： A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.
摘要翻译：将膜沉积在设置在基板处理室中的基板上。衬底具有形成在相邻的凸起表面之间的沟槽。膜的第一部分通过化学气相沉积从流入处理室的第一气态混合物沉积在衬底上。此后，通过使具有卤素前体，氢前体和氧前体的蚀刻剂气体流入处理室来蚀刻第一部分。此后，膜的第二部分通过化学气相沉积从流过处理室的第二气态混合物沉积在衬底上。

2. 发明授权

US07229931B2 Oxygen plasma treatment for enhanced HDP-CVD gapfill 失效
标题翻译：氧等离子体处理用于增强HDP-CVD填隙
公开(公告)号：US07229931B2
公开(公告)日：2007-06-12
申请号：US10870232
申请日：2004-06-16
申请人： Hemant P. Mungekar , Young S Lee , Manoj Vellaikal , Karen Greig , Bikram Kapoor
发明人： Hemant P. Mungekar , Young S Lee , Manoj Vellaikal , Karen Greig , Bikram Kapoor
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02164 , C23C16/402 , C23C16/45523 , C23C16/505 , H01L21/02274 , H01L21/31612
摘要： Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 1011 ions/cm3 from the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 1011 ions/cm3. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.
摘要翻译：提供了用于在设置在基板处理室中的基板上沉积氧化硅膜的方法。基板在相邻的凸起表面之间形成间隙。具有含硅气体，含氧气体和流动气体的工艺气体流入基板处理室。将流体气体以至少500sccm的流量引入基板处理室。形成等离子体，其具有距工艺气体至少10×10 11 / cm 3以上的离子密度，以将氧化硅膜的第一部分沉积在衬底上并且进入差距。此后，将沉积的第一部分暴露于具有至少10×10 11 / cm 3以上的氧等离子体。此后，氧化硅膜的第二部分沉积在衬底上并进入间隙。

3. 发明授权

US07745350B2 Impurity control in HDP-CVD DEP/ETCH/DEP processes 失效
标题翻译： HDP-CVD DEP / ETCH / DEP工艺中的杂质控制
公开(公告)号：US07745350B2
公开(公告)日：2010-06-29
申请号：US12204523
申请日：2008-09-04
申请人： Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
发明人： Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
IPC分类号： H01L21/311 , H01L21/3065
CPC分类号： C23C16/045 , C23C16/4408 , H01L21/02164 , H01L21/02274 , H01L21/31116 , H01L21/31608 , H01L21/76229
摘要： Methods are disclosed of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A first portion of the silicon oxide film is deposited over the substrate and within the gap using a high-density plasma process. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched back. This includes flowing a halogen precursor through a first conduit from a halogen-precursor source to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the portion has been etched back. Thereafter, a halogen scavenger is flowed to the substrate processing chamber to react with residual halogen in the substrate processing chamber. Thereafter, a second portion of the silicon oxide film is deposited over the first portion of the silicon oxide film and within the gap using a high-density plasma process.
摘要翻译：公开了在设置在基板处理室中的基板上沉积氧化硅膜的方法。基板在相邻的凸起表面之间形成间隙。氧化硅膜的第一部分使用高密度等离子体工艺沉积在衬底上并在间隙内。此后，将氧化硅膜的沉积的第一部分的一部分回蚀刻。这包括使卤素前体通过第一导管从卤素前体源流到基底处理室，从卤素前体形成高密度等离子体，并且在该部分被回蚀后终止流动卤素前体。此后，卤素清除剂流到基板处理室以与基板处理室中的残留卤素反应。此后，使用高密度等离子体处理，在氧化硅膜的第一部分和间隙内沉积第二部分氧化硅膜。

4. 发明申请

US20090075489A1 REDUCTION OF ETCH-RATE DRIFT IN HDP PROCESSES 有权
标题翻译：降低HDP工艺中的蚀刻速率
公开(公告)号：US20090075489A1
公开(公告)日：2009-03-19
申请号：US12204503
申请日：2008-09-04
申请人： Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
发明人： Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
IPC分类号： H01L21/31
CPC分类号： C23C16/045 , C23C16/4404 , C23C16/4405 , H01L21/02164 , H01L21/02274 , H01L21/31612
摘要： A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5000 Å is deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates.
摘要翻译：通过向处理室提供季节前体的流动来调节处理室。通过在处理室的顶部施加分配有大于70％的源功率的至少7500W的源功率，从季节前体形成高密度等离子体。使用高密度等离子体在一个点沉积具有至少5000埃的厚度的季节层。将多个基板中的每一个依次传送到处理室中以执行包括蚀刻的处理。在基板的顺序转印之间清洁处理室。

5. 发明申请

US20080299775A1 GAPFILL EXTENSION OF HDP-CVD INTEGRATED PROCESS MODULATION SIO2 PROCESS 审中-公开
标题翻译： GAPFILL扩展HDP-CVD集成过程调制SIO2过程
公开(公告)号：US20080299775A1
公开(公告)日：2008-12-04
申请号：US11757637
申请日：2007-06-04
申请人： Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
发明人： Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
IPC分类号： H01L21/311
CPC分类号： H01L21/31608 , C23C16/045 , C23C16/45523 , C23C16/507 , H01L21/02164 , H01L21/02274 , H01L21/31116 , H01L21/76229
摘要： Methods are disclosed for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. A high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas. A first portion of the silicon oxide film is deposited using the high-density plasma at a deposition rate between 900 and 6000 Å/min and with a deposition/sputter ratio greater than 30. The deposition/sputter ratio is defined as a ratio of a net deposition rate and a blanket sputtering rate to the blanket sputtering rate. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched. A second portion of the silicon oxide film is deposited over the etched portion of the silicon oxide film.
摘要翻译：公开了用于在设置在基板处理室中的基板上沉积氧化硅膜的方法。基板在相邻的凸起表面之间形成间隙。含硅气体，含氧气体和流动气体流入衬底处理室。由含硅气体，含氧气体和流动气体形成高密度等离子体。使用高密度等离子体以900和6000 / min之间的沉积速率并且沉积/溅射比大于30沉积氧化硅膜的第一部分。沉积/溅射比定义为净沉积速率和覆盖溅射速率的覆盖溅射速率。此后，蚀刻氧化硅膜的沉积的第一部分的一部分。氧化硅膜的第二部分沉积在氧化硅膜的蚀刻部分上。

6. 发明授权

US07867921B2 Reduction of etch-rate drift in HDP processes 有权
标题翻译：降低HDP工艺中的蚀刻速率漂移
公开(公告)号：US07867921B2
公开(公告)日：2011-01-11
申请号：US12204503
申请日：2008-09-04
申请人： Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
发明人： Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/045 , C23C16/4404 , C23C16/4405 , H01L21/02164 , H01L21/02274 , H01L21/31612
摘要： A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5000 Å is deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates.
摘要翻译：通过向处理室提供季节前体的流动来调节处理室。通过在处理室的顶部施加分配有大于70％的源功率的至少7500W的源功率，从季节前体形成高密度等离子体。使用高密度等离子体在一个点沉积具有至少5000埃的厚度的季节层。将多个基板中的每一个依次传送到处理室中以执行包括蚀刻的处理。在基板的顺序转印之间清洁处理室。

7. 发明申请

US20090068853A1 IMPURITY CONTROL IN HDP-CVD DEP/ETCH/DEP PROCESSES 失效
标题翻译： HDP-CVD DEP / ETCH / DEP工艺中的污染控制
公开(公告)号：US20090068853A1
公开(公告)日：2009-03-12
申请号：US12204523
申请日：2008-09-04
申请人： Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
发明人： Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
IPC分类号： H01L21/314
CPC分类号： C23C16/045 , C23C16/4408 , H01L21/02164 , H01L21/02274 , H01L21/31116 , H01L21/31608 , H01L21/76229
摘要： Methods are disclosed of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A first portion of the silicon oxide film is deposited over the substrate and within the gap using a high-density plasma process. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched back. This includes flowing a halogen precursor through a first conduit from a halogen-precursor source to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the portion has been etched back. Thereafter, a halogen scavenger is flowed to the substrate processing chamber to react with residual halogen in the substrate processing chamber. Thereafter, a second portion of the silicon oxide film is deposited over the first portion of the silicon oxide film and within the gap using a high-density plasma process.
摘要翻译：公开了在设置在基板处理室中的基板上沉积氧化硅膜的方法。基板在相邻的凸起表面之间形成间隙。氧化硅膜的第一部分使用高密度等离子体工艺沉积在衬底上并在间隙内。此后，将氧化硅膜的沉积的第一部分的一部分回蚀刻。这包括使卤素前体通过第一导管从卤素前体源流到基底处理室，从卤素前体形成高密度等离子体，并且在部分已被回蚀后终止流动卤素前体。此后，卤素清除剂流到基板处理室以与基板处理室中的残留卤素反应。此后，使用高密度等离子体处理，在氧化硅膜的第一部分和间隙内沉积第二部分氧化硅膜。

8. 发明授权

US07205240B2 HDP-CVD multistep gapfill process 失效
标题翻译： HDP-CVD多步填缝工艺
公开(公告)号：US07205240B2
公开(公告)日：2007-04-17
申请号：US10456611
申请日：2003-06-04
申请人： M. Ziaul Karim , Bikram Kapoor , Anchuan Wang , Dong Qing Li , Katsunari Ozeki , Manoj Vellaikal , Zhuang Li
发明人： M. Ziaul Karim , Bikram Kapoor , Anchuan Wang , Dong Qing Li , Katsunari Ozeki , Manoj Vellaikal , Zhuang Li
IPC分类号： C23C16/00
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/31116 , H01L21/76837
摘要： A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.
摘要翻译：使用HDP-CVD沉积，蚀刻和沉积步骤的循环来提供间隙填充方法。第一沉积步骤期间的流动气体包括诸如He的惰性气体，但在剩余沉积步骤期间包括H 2 O 3。在第一沉积步骤期间流动气体的较高的平均分子量提供了一些限定在蚀刻步骤期间保护它们的间隙的结构。在剩余沉积步骤期间流动气体的较低平均分子量具有降低的溅射特性，并且在填充间隙的剩余部分时是有效的。

9. 发明授权

US07329586B2 Gapfill using deposition-etch sequence 有权
标题翻译： Gapfill使用沉积蚀刻序列
公开(公告)号：US07329586B2
公开(公告)日：2008-02-12
申请号：US11166357
申请日：2005-06-24
申请人： Manoj Vellaikal , Hemant P. Mungekar , Young S. Lee , Yasutoshi Okuno , Hiroshi Yuasa
发明人： Manoj Vellaikal , Hemant P. Mungekar , Young S. Lee , Yasutoshi Okuno , Hiroshi Yuasa
IPC分类号： H01L21/76
CPC分类号： H01L21/31612 , C23C16/045 , H01L21/02164 , H01L21/02274
摘要： Methods deposit a film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. Flows of first precursor deposition gases are provided to the substrate processing chamber. A first high-density plasma is formed from the flows of first deposition gases to deposit a first portion of the film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components until after the gap has closed. A sufficient part of the first portion of the film is etched back to reopen the gap. Flows of second precursor deposition gases are provided to the substrate processing chamber. A second high-density plasma is formed from the flows of second precursor deposition gases to deposit a second portion of the film over the substrate and within the reopened gap with a second deposition process that has simultaneous deposition and sputtering components.
摘要翻译：方法在设置在基板处理室中的基板上沉积膜。基板在相邻的凸起表面之间形成间隙。将第一前体沉积气体的流动提供给基板处理室。由第一沉积气体流形成第一高密度等离子体，以在第一沉积工艺和第二沉积工艺之后，在第一沉积工艺之后在膜上沉积薄膜的第一部分，直到间隙闭合为止。将膜的第一部分的足够部分回蚀刻以重新打开间隙。向基板处理室提供第二前体沉积气体的流动。第二高密度等离子体由第二前体沉积气体的流形成，以便在具有同时沉积和溅射部件的第二沉积工艺的基础上沉积薄膜的第二部分并且在重新打开的间隙内。

10. 发明申请

US20130273262A1 STATIC DEPOSITION PROFILE MODULATION FOR LINEAR PLASMA SOURCE 审中-公开
标题翻译：线性等离子体源的静态沉积剖面调制
公开(公告)号：US20130273262A1
公开(公告)日：2013-10-17
申请号：US13447035
申请日：2012-04-13
申请人： Manoj Vellaikal , Michael S. Cox , Hemant P. Mungekar , Chikuang C. Wang , Lin Zhang , Hari K. Ponnekanti , Michael P. Stewart , Edward P. Hammond, IV , Alexander S. Polyak
发明人： Manoj Vellaikal , Michael S. Cox , Hemant P. Mungekar , Chikuang C. Wang , Lin Zhang , Hari K. Ponnekanti , Michael P. Stewart , Edward P. Hammond, IV , Alexander S. Polyak
IPC分类号： C23C16/50
CPC分类号： C23C16/45565 , C23C16/45589 , C23C16/50 , C23C16/54
摘要： Methods and apparatus for controlling film deposition using a linear plasma source are described herein. The apparatus include a showerhead having openings therein for flowing a gas therethrough, a conveyor to support one or more substrates thereon disposed adjacent to the showerhead, and a power source for ionizing the gas. The ionized gas can be a source gas used to deposit a material on the substrate. The deposition profile of the material on the substrate can be adjusted, for example, using a gas-shaping device included in the apparatus. Additionally or alternatively, the deposition profile may be adjusted by using an actuatable showerhead. The method includes exposing a substrate to an ionized gas to deposit a film on the substrate, wherein the ionized gas is influenced with a gas-shaping device to uniformly deposit the film on the substrate as the substrate is conveyed proximate to the showerhead.
摘要翻译：本文描述了使用线性等离子体源来控制膜沉积的方法和装置。该装置包括：喷嘴，其中具有用于使气体流过其中的开口;输送机，用于支撑其上邻近喷淋头设置的一个或多个基板;以及用于使气体离子化的电源。电离气体可以是用于在衬底上沉积材料的源气体。可以例如使用包括在该装置中的气体整形装置来调节衬底上的材料的沉积轮廓。附加地或替代地，沉积轮廓可以通过使用可启动喷头来调节。该方法包括将衬底暴露于电离气体以在衬底上沉积膜，其中当衬底被输送到靠近喷头时，电离气体受到气体整形装置的影响，从而将膜均匀地沉积在衬底上。

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