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1. 发明授权

US4722659A Semiconductor wafer carrier transport apparatus 失效
标题翻译：半导体晶片载体输送装置
公开(公告)号：US4722659A
公开(公告)日：1988-02-02
申请号：US863961
申请日：1986-05-16
申请人： Hazen L. Hoyt, III , John D. Sanders , Jon C. Goldman , William R. Mello
发明人： Hazen L. Hoyt, III , John D. Sanders , Jon C. Goldman , William R. Mello
IPC分类号： H01L21/00 , H01L21/67 , H01L21/677 , B65B21/02
CPC分类号： H01L21/67115 , H01L21/67 , H01L21/67769 , Y10S414/137 , Y10S414/14
摘要： Semiconductor wafers in plastic cassettes are loaded into (and later unloaded from) an input/output station serving a CVD furnace and thereafter the cassettes are non-manually transported by a programmable elevator to and from a flat-finder, a wafer transfer machine (where the wafers are transferred to a boat) and in-process storage. The boats are non-manually transported by a second programmable elevator to and from the wafer transfer machine, in-process boat storage and a boat loader (or process chamber directly). The cassettes can be loaded or unloaded while one or both of the elevators are operating. Up to eight human assisted steps are reduced to only two such steps.Furnaces having more than one processing chamber have a loading station, in-process cassettes and boat storage and boats dedicated to each processing chamber so that there is no cross contamination between processing chambers caused by the boats and the cassettes in which wafers are delivered to the process are the same cassettes in which process wafers are returned to the input/output station so that there is no cross contamination of the wafers caused by the cassettes.
摘要翻译：将塑料盒中的半导体晶片装载到服务于CVD炉的输入/输出站（然后从其中卸载），此后，盒可以通过可编程电梯非平移式地从平板扫描器，晶片转印机（其中晶片转移到船上）和过程中的存储。船只通过第二可编程电梯非手动地运送到晶片转移机器，进程中的船舶存储器和船装载机（或直接处理室）中。当一个或两个电梯正在操作时，盒可以装载或卸载。最多八个人工辅助步骤仅减少到两个这样的步骤。具有多于一个处理室的炉具有加载站，处理中的盒和船的存储和专用于每个处理室的船，使得由船形成的处理室和盒之间没有交叉污染，其中晶片被递送到处理是相同的盒，其中处理晶片返回到输入/输出站，使得由盒引起的晶片不会交叉污染。

2. 发明授权

US4934767A Semiconductor wafer carrier input/output drawer 失效
标题翻译：半导体晶圆载体输入/输出抽屉
公开(公告)号：US4934767A
公开(公告)日：1990-06-19
申请号：US863960
申请日：1986-05-16
申请人： Hazen L. Hoyt, III , Jon C. Goldman , William R. Mello
发明人： Hazen L. Hoyt, III , Jon C. Goldman , William R. Mello
IPC分类号： B65G1/02 , H01L21/673
CPC分类号： H01L21/67769 , B65G1/02
摘要： Plastic cassettes carrying semiconductor wafers are loaded into and/or unloaded from an extended open drawer. The drawer is retractable to a closed position in a frame where the cassettes may be removed from or returned to the drawer by a programmable elevator. The frame may have several drawers and cassettes may be safely loaded into or unloaded from the open drawer while cassettes are being removed from or returned to a closed drawer.
摘要翻译：携带半导体晶片的塑料盒装载到延伸的开放抽屉中和/或从其中卸载。抽屉可伸缩到框架中的关闭位置，其中盒可以通过可编程电梯从抽屉中移除或返回到抽屉。框架可以具有多个抽屉，并且盒子可以从打开的抽屉被安全地装载到或从打开的抽屉中卸载，同时盒子被从包装盒中取出或者返回到关闭的抽屉中。

3. 发明授权

US4817557A Process and apparatus for low pressure chemical vapor deposition of refractory metal 失效
$Process and apparatus for low pressure chemical vapor deposition of refractory metal$
标题翻译：难熔金属低压化学气相沉积工艺及装置
公开(公告)号：US4817557A
公开(公告)日：1989-04-04
申请号：US92967
申请日：1987-09-04
申请人： Michael Diem , Michael A. Fisk , Jon C. Goldman
发明人： Michael Diem , Michael A. Fisk , Jon C. Goldman
IPC分类号： C23C16/54 , H01L21/285 , C23C16/00
CPC分类号： C23C16/54 , H01L21/28556
摘要： A process and apparatus for the low pressure, cold wall, chemical vapor deposition of refractory metals, such as tungsten on a silicon wafer. The silicon wafer is introduced into a loading lock wherein the pressure is reduced to subatmospheric pressure. The silicon wafer is transferred to a deposition chamber where it is heated to an elevated temperature. A refractory metal carbonyl vapor is introduced into the deposition chamber and dissociates to deposit a refractory metal on the silicon wafer. The wafer is transferred to an unloading lock where it is allowed to cool and is then removed.
摘要翻译：用于在硅晶片上的诸如钨的难熔金属的低压，冷壁，化学气相沉积的方法和装置。将硅晶片引入装载锁中，其中压力降低至低于大气压。将硅晶片转移到沉积室，在其中将其加热到升高的温度。将难熔金属羰基蒸气引入沉积室中并解离以在硅晶片上沉积难熔金属。将晶片转移到卸载锁上，在其中允许其冷却，然后将其移除。

4. 发明授权

US4726961A Process for low pressure chemical vapor deposition of refractory metal 失效
$Process for low pressure chemical vapor deposition of refractory metal$
标题翻译：难熔金属低压化学气相沉积工艺
公开(公告)号：US4726961A
公开(公告)日：1988-02-23
申请号：US874754
申请日：1986-06-16
申请人： Michael Diem , Michael A. Fisk , Jon C. Goldman
发明人： Michael Diem , Michael A. Fisk , Jon C. Goldman
IPC分类号： C23C16/54 , H01L21/285 , B05D5/12 , C23C16/00
CPC分类号： C23C16/54 , H01L21/28556 , Y10S438/935
摘要： A process and apparatus for the low pressure, cold wall, chemical vapor deposition of refractory metals, such as tungsten on a silicon wafer. The silicon wafer is introduced into a loading lock wherein the pressure is reduced to subatmospheric pressure. The silicon wafer is transferred to a deposition chamber where it is heated to an elevated temperature. A refractory metal carbonyl vapor is introduced into the deposition chamber and dissociates to deposit a refractory metal on the silicon wafer. The wafer is transferred to an unloading lock where it is allowed to cool and is then removed.
摘要翻译：用于在硅晶片上的诸如钨的难熔金属的低压，冷壁，化学气相沉积的方法和装置。将硅晶片引入装载锁中，其中压力降低至低于大气压。将硅晶片转移到沉积室，在其中将其加热到升高的温度。将难熔金属羰基蒸气引入沉积室中并解离以在硅晶片上沉积难熔金属。将晶片转移到卸载锁上，在其中允许其冷却，然后将其移除。

5. 发明授权

US4557950A Process for deposition of borophosphosilicate glass 失效
标题翻译：硼磷硅酸盐玻璃沉积工艺
公开(公告)号：US4557950A
公开(公告)日：1985-12-10
申请号：US611793
申请日：1984-05-18
申请人： Thomas C. Foster , Jon C. Goldman , Gary W. Hoeye
发明人： Thomas C. Foster , Jon C. Goldman , Gary W. Hoeye
IPC分类号： C03B19/14 , C23C16/40 , H01L21/316 , C23C16/30
CPC分类号： H01L21/02129 , C23C16/401 , H01L21/02271 , H01L21/31625
摘要： A process for chemical vapor deposition of borophosphosilicate glass on a silicon wafer at reduced pressure is disclosed herein. The process includes a step of placing a silicon wafer within a reactor tube. The reactor tube is evacuated to a pressure of less than 500 millitorr and is heated to a temperature of not less than 350.degree. C. and not greater than 500.degree. C. A mixture of silane, phosphine and boron trichloride gases is flowed into the reactor tube so that the mixture contacts the silicon wafer. At the same time, a quantity of oxygen is flowed into the reactor tube so that the oxygen also contacts the silicon wafer and intermixes and reacts with the silane, phosphine and boron trichloride gases to form layers of borophosphosilicate glass on the silicon wafer.
摘要翻译：本文公开了一种在减压下在硅晶片上化学气相沉积硼磷硅酸盐玻璃的方法。该方法包括将硅晶片放置在反应器管内的步骤。将反应器管抽成小于500毫托的压力，并加热至不低于350℃且不高于500℃的温度。将硅烷，磷化氢和三氯化硼气体的混合物流入反应器使得混合物接触硅晶片。同时，一定量的氧气流入反应器管，使得氧也接触硅晶片，并与硅烷，磷化氢和三氯化硼气体混合并反应，以在硅晶片上形成硼磷硅玻璃层。

6. 发明授权

US4279947A Deposition of silicon nitride 失效
标题翻译：沉积氮化硅
公开(公告)号：US4279947A
公开(公告)日：1981-07-21
申请号：US23568
申请日：1979-03-26
申请人： Jon C. Goldman , Larry D. McMillan , James B. Price
发明人： Jon C. Goldman , Larry D. McMillan , James B. Price
IPC分类号： C23C16/34 , C23C11/14
CPC分类号： C23C16/345
摘要： Silicon nitride is pyrolytically deposited by the reaction of a halosilane with ammonia in an evacuated system. The process is particularly useful in providing uniform layers of silicon nitride on silicon wafers to be used in the fabrication of semiconductor devices.
摘要翻译：在真空系统中氮化硅通过卤代硅烷与氨的反应被热解沉积。该工艺在用于制造半导体器件的硅晶片上提供均匀的氮化硅层是特别有用的。

7. 发明授权

US4619840A Process and apparatus for low pressure chemical vapor deposition of refractory metal 失效
$Process and apparatus for low pressure chemical vapor deposition of refractory metal$
标题翻译：难熔金属低压化学气相沉积工艺及装置
公开(公告)号：US4619840A
公开(公告)日：1986-10-28
申请号：US497321
申请日：1983-05-23
申请人： Jon C. Goldman , Michael A. Fisk , Michael Diem
发明人： Jon C. Goldman , Michael A. Fisk , Michael Diem
IPC分类号： C23C16/16 , C23C16/54 , H01L21/285
CPC分类号： C23C16/54 , H01L21/28556 , Y10S438/935
摘要： A process and apparatus for the low pressure, cold wall, chemical vapor deposition of refractory metals, such as tungsten on a silicon wafer. The silicon wafer is introduced into a loading lock wherein the pressure is reduced to subatmospheric pressure. The silicon wafer is transferred to a deposition chamber where it is heated to an elevated temperature. A refractory metal carbonyl vapor is introduced into the deposition chamber and dissociates to deposit a refractory metal on the silicon wafer. The wafer is transferred to an unloading lock where it is allowed to cool and is then removed.
摘要翻译：用于在硅晶片上的诸如钨的难熔金属的低压，冷壁，化学气相沉积的方法和装置。将硅晶片引入装载锁中，其中压力降低至低于大气压。将硅晶片转移到沉积室，在其中将其加热到升高的温度。将难熔金属羰基蒸气引入沉积室中并解离以在硅晶片上沉积难熔金属。将晶片转移到卸载锁上，在其中允许其冷却，然后将其移除。

8. 发明授权

US4376796A Processing silicon wafers employing processing gas atmospheres of similar molecular weight 失效
标题翻译：使用类似分子量的加工气体环境处理硅晶片
公开(公告)号：US4376796A
公开(公告)日：1983-03-15
申请号：US315572
申请日：1981-10-27
申请人： Robert D. Arrasmith , Thomas R. Barnhart , Jon C. Goldman
发明人： Robert D. Arrasmith , Thomas R. Barnhart , Jon C. Goldman
IPC分类号： C01B33/02 , H01L21/316
CPC分类号： H01L21/02238 , H01L21/31662 , Y10S438/909 , Y10S438/935
摘要： At atmosphere X and an atmosphere Y, which may be an oxidizing atmosphere, are used in a process wherein silicon wafers are processed in a processing chamber, which is pressurized sequentially with a purging atmosphere, with the atmosphere X, and with the atmosphere Y displacing the atmosphere X excpet for a residual portion remaining with the atmosphere X and diminishing in concentration with time. As the atmosphere X has a molecular weight approximating the molecular weight of the atmosphere Y, stratification is minimized. If the atmosphere Y is steam, the atmosphere X may be a premixture of helium and oxyen.
摘要翻译：在气氛X和可能是氧化性气氛的气氛Y中，使用硅晶片在用气氛X与依次用吹扫气氛依次加压的处理室中进行处理，气氛Y置换气氛X排出剩余部分残留气氛X并随时间减少浓度。由于气氛X具有接近气氛Y的分子量的分子量，所以分层被最小化。如果气氛Y是蒸汽，气氛X可以是氦和氧气的预混物。

9. 发明授权

US4369031A Gas control system for chemical vapor deposition system 失效
标题翻译：化学气相沉积系统气体控制系统
公开(公告)号：US4369031A
公开(公告)日：1983-01-18
申请号：US302003
申请日：1981-09-15
申请人： Jon C. Goldman , Robert E. Rappaport
发明人： Jon C. Goldman , Robert E. Rappaport
IPC分类号： B01J3/04 , B01J4/00 , C23C16/52 , F27D7/02 , F27D19/00 , G05D7/06 , H01L21/31 , F27B5/04 , B05C19/02
CPC分类号： F27D19/00 , B01J3/044 , B01J4/008 , C23C16/52 , F27D7/02 , Y10S438/935
摘要： A gas flow control system in which several constituent gases are mixed and the mixture delivered through controlled injectors to a processing zone. Mass flow controllers control the injector flows with one of the controllers being a master and the other being slaved to provide a selected percentage of the flow through the master controller. The gas mix is regulated by a mass flow controller on one of the constituents and a flow meter on the other, the flow meter producing an error signal which is used to readjust the total flow through the injectors by control of the master injector flow controller.
摘要翻译：一种气体流量控制系统，其中混合了几种构成气体，并将混合物通过受控喷射器输送到处理区域。质量流量控制器控制喷油器流量，其中一个控制器是主控制器，另一个控制器是从机的，以提供通过主控制器的流量的选定百分比。气体混合物由质量流量控制器在组分之一和流量计之间调节，流量计产生误差信号，该误差信号用于通过主喷射器流量控制器的控制重新调整通过喷射器的总流量。

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