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1. 发明授权

US07973280B2 Composite charged particle beam apparatus, method of processing a sample and method of preparing a sample for a transmission electron microscope using the same 有权
标题翻译：复合带电粒子束装置，处理样品的方法和使用该样品的透射电子显微镜制备样品的方法
公开(公告)号：US07973280B2
公开(公告)日：2011-07-05
申请号：US12378138
申请日：2009-02-11
申请人： Haruo Takahashi , Yutaka Ikku , Yo Yamamoto , Kouji Iwasaki
发明人： Haruo Takahashi , Yutaka Ikku , Yo Yamamoto , Kouji Iwasaki
IPC分类号： G01N23/00 , H01J27/00
CPC分类号： H01J37/3056 , G01N1/286 , H01J37/222 , H01J37/244 , H01J37/28 , H01J37/3005 , H01J37/3045 , H01J2237/31745 , H01J2237/31749
摘要： An apparatus is provided that precisely conduct ion beam etching to a sample having the properties of which easily change by electron beam irradiation with no loss of ease of operation and throughput. An apparatus includes an ion beam lens barrel and an electron beam lens barrel, which can observe or measure the conditions of a sample with an electron beam in the process of etching with an ion beam, wherein first, an observation image is obtained that includes the entire process area formed by secondary signals generated by an electron beam, secondly, an irradiation permit area and an irradiation inhibit area are defined in the observation image, and thirdly, electron beam irradiation is restricted only to the irradiation permit area.
摘要翻译：提供了一种设备，其精确地将离子束蚀刻导入具有易于通过电子束照射而改变的性质的样品，而不会损失操作容易性和生产量。一种装置包括离子束透镜镜筒和电子束透镜镜筒，其可以在用离子束蚀刻的过程中观察或测量具有电子束的样品的条件，其中首先获得包括在观察图像中定义由电子束产生的二次信号形成的整个处理区域，其次，照射许可区域和照射禁止区域，第三，电子束照射仅限于照射许可区域。

2. 发明申请

US20090206254A1 Composite charged particle beam apparatus, method of processing a sample and method of preparing a sample for a transmission electron microscope using the same 有权
标题翻译：复合带电粒子束装置，处理样品的方法和使用该样品的透射电子显微镜制备样品的方法
公开(公告)号：US20090206254A1
公开(公告)日：2009-08-20
申请号：US12378138
申请日：2009-02-11
申请人： Haruo Takahashi , Yutaka Ikku , Yo Yamamoto , Kouji Iwasaki
发明人： Haruo Takahashi , Yutaka Ikku , Yo Yamamoto , Kouji Iwasaki
IPC分类号： G01N23/00 , A61N5/00
CPC分类号： H01J37/3056 , G01N1/286 , H01J37/222 , H01J37/244 , H01J37/28 , H01J37/3005 , H01J37/3045 , H01J2237/31745 , H01J2237/31749
摘要： An apparatus is provided that precisely conduct ion beam etching to a sample having the properties of which easily change by electron beam irradiation with no loss of ease of operation and throughput. An apparatus includes an ion beam lens barrel and an electron beam lens barrel, which can observe or measure the conditions of a sample with an electron beam in the process of etching with an ion beam, wherein first, an observation image is obtained that includes the entire process area formed by secondary signals generated by an electron beam, secondly, an irradiation permit area and an irradiation inhibit area are defined in the observation image, and thirdly, electron beam irradiation is restricted only to the irradiation permit area.
摘要翻译：提供了一种设备，其精确地将离子束蚀刻导入具有易于通过电子束照射而改变的性质的样品，而不会损失操作容易性和生产量。一种装置包括离子束透镜镜筒和电子束透镜镜筒，其可以在用离子束蚀刻的过程中观察或测量具有电子束的样品的条件，其中首先获得包括在观察图像中定义由电子束产生的二次信号形成的整个处理区域，其次，照射许可区域和照射禁止区域，第三，电子束照射仅限于照射许可区域。

3. 发明授权

US07442942B2 Charged particle beam apparatus 有权
标题翻译：带电粒子束装置
公开(公告)号：US07442942B2
公开(公告)日：2008-10-28
申请号：US11509520
申请日：2006-08-24
申请人： Haruo Takahashi , Toshiaki Fujii , Yutaka Ikku , Kouji Iwasaki , Yo Yamamoto
发明人： Haruo Takahashi , Toshiaki Fujii , Yutaka Ikku , Kouji Iwasaki , Yo Yamamoto
IPC分类号： H01J37/20
CPC分类号： H01J37/304 , G01N1/32 , H01J2237/31745 , H01J2237/31749
摘要： To include a focused ion beam apparatus fabricating a sliced specimen by processing a specimen as well as observing the sliced specimen, a scanning electron microscope observing the slice specimen, a gas-ion beam irradiation apparatus performing finishing processing by irradiating a gas-ion beam onto a surface of the sliced specimen, a specimen stage on which the sliced specimen is fixed and having at least one or more rotation axis, a specimen posture recognition means recognizing positional relation of the sliced specimen with respect to the specimen stage and a specimen stage control means controlling the specimen stage based on a specimen posture recognized by the posture recognition means and an installation angle of the gas-ion beam irradiation apparatus in order to allow an incident angle of the gas-ion beam with respect to the obverse or the reverse of the sliced specimen to be a desired value.
摘要翻译：为了包括聚焦离子束装置，通过加工试样和观察切片试样来制造切片样品，观察切片试样的扫描电子显微镜，气相离子束照射装置，通过将气体离子束照射到切片试样的表面，切片试样固定并具有至少一个以上的旋转轴的试样台，识别切片试样相对于试样台的位置关系的试样姿势识别装置和试样台控制意味着基于由姿势识别装置识别的样本姿势和气体离子束照射装置的安装角度来控制样本台，以便允许气体离子束相对于正面或反向的入射角切片样品为期望值。

4. 发明申请

US20070045560A1 Charged particle beam apparatus 有权
标题翻译：带电粒子束装置
公开(公告)号：US20070045560A1
公开(公告)日：2007-03-01
申请号：US11509520
申请日：2006-08-24
申请人： Haruo Takahashi , Toshiaki Fujii , Yutaka Ikku , Kouji Iwasaki , Yo Yamamoto
发明人： Haruo Takahashi , Toshiaki Fujii , Yutaka Ikku , Kouji Iwasaki , Yo Yamamoto
IPC分类号： H01J37/20 , G01N1/28
CPC分类号： H01J37/304 , G01N1/32 , H01J2237/31745 , H01J2237/31749
摘要： To include a focused ion beam apparatus fabricating a sliced specimen by processing a specimen as well as observing the sliced specimen, a scanning electron microscope observing the slice specimen, a gas-ion beam irradiation apparatus performing finishing processing by irradiating a gas-ion beam onto a surface of the sliced specimen, a specimen stage on which the sliced specimen is fixed and having at least one or more rotation axis, a specimen posture recognition means recognizing positional relation of the sliced specimen with respect to the specimen stage and a specimen stage control means controlling the specimen stage based on a specimen posture recognized by the posture recognition means and an installation angle of the gas-ion beam irradiation apparatus in order to allow an incident angle of the gas-ion beam with respect to the obverse or the reverse of the sliced specimen to be a desired value.
摘要翻译：为了包括聚焦离子束装置，通过加工试样和观察切片试样来制造切片样品，观察切片试样的扫描电子显微镜，气相离子束照射装置，通过将气体离子束照射到切片试样的表面，切片试样固定并具有至少一个以上的旋转轴的试样台，识别切片试样相对于试样台的位置关系的试样姿势识别装置和试样台控制意味着基于由姿势识别装置识别的样本姿势和气体离子束照射装置的安装角度来控制样本台，以便允许气体离子束相对于正面或反向的入射角切片样品为期望值。

5. 发明授权

US07002150B2 Thin specimen producing method and apparatus 有权
标题翻译：薄标本制造方法和装置
公开(公告)号：US07002150B2
公开(公告)日：2006-02-21
申请号：US10854868
申请日：2004-05-27
申请人： Kouji Iwasaki , Yutaka Ikku
发明人： Kouji Iwasaki , Yutaka Ikku
IPC分类号： G21K7/00
CPC分类号： G01N1/32 , H01J2237/3174
摘要： A thin specimen producing method acquires a work amount in a 1-line scan by an FIB under a predetermined condition, measures a remaining work width of a thin film on an upper surface of a specimen by a microscopic length-measuring function, determines a required number of scan lines of work to reach a predetermined width by calculation, and executes a work to obtain a set thickness. The work amount in a one-line scan by the FIB under the predetermined condition is determined by working the specimen in scans of plural lines, measuring the etched dimension by the microscopic length-measuring function, and calculating an average work amount per one-line scan.
摘要翻译：薄标本制作方法通过FIB在预定条件下获取1行扫描中的工作量，通过微观长度测量功能测量样品上表面上的薄膜的剩余工作宽度，确定所需的通过计算达到预定宽度的扫描线的数量，并执行获得设定厚度的工作。通过FIB在预定条件下的单行扫描中的工作量通过在多行扫描中进行样品的工作，通过微观长度测量功能测量蚀刻尺寸并计算每行的平均工作量来确定扫描

6. 发明授权

US07060397B2 EPL mask processing method and device thereof 失效
标题翻译： EPL掩模处理方法及其装置
公开(公告)号：US07060397B2
公开(公告)日：2006-06-13
申请号：US10452541
申请日：2003-06-02
申请人： Yo Yamamoto , Kouji Iwasaki , Masamichi Oi
发明人： Yo Yamamoto , Kouji Iwasaki , Masamichi Oi
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： G03F1/20 , G03F1/74 , G03F1/82 , H01J2237/31742 , Y10S430/143
摘要： A method of correcting a defective portion of an exposure window in a lithography mask, such as an EPL mask, includes a first step of irradiating a defective portion of the exposure window using a charge particle beam to perform correction processing, and a second step of irradiating another portion of the exposure window with the charged particle beam to eliminate attached matter therefrom, the attached matter consisting of particles ejected from the defective portion of the exposure window as a result of irradiation with the charged particle beam during the first step. The first step and the second step are sequentially repeated N times, wherein N is an integer of 2 or more, to thereby reduce the time needed for eliminating the attached matter.
摘要翻译：一种校正诸如EPL掩模的光刻掩模中的曝光窗口的缺陷部分的方法包括：第一步骤，使用电荷粒子束照射曝光窗口的缺陷部分以执行校正处理，第二步骤用带电粒子束照射曝光窗口的另一部分以从其中除去附着物，所述附着物质由在第一步骤期间被带电粒子束的照射而从曝光窗口的缺陷部分喷出的颗粒组成。第一步骤和第二步骤依次重复N次，其中N为2以上的整数，从而减少了除去附着物所需的时间。

7. 发明授权

US07067823B2 Micro-sample pick-up apparatus and micro-sample pick-up method 有权
标题翻译：微量取样装置和微量取样方法
公开(公告)号：US07067823B2
公开(公告)日：2006-06-27
申请号：US10839508
申请日：2004-05-05
申请人： Kouji Iwasaki , Yo Yamamoto
发明人： Kouji Iwasaki , Yo Yamamoto
IPC分类号： G01N1/00
CPC分类号： H01J37/20 , G01N1/32 , H01J2237/208
摘要： A micro-sample pick-up apparatus has a probe for picking up a micro sample, a probe holder for holding the probe, an XYZ driver mechanism for moving the probe holder in the three-dimensional directions of X, Y and Z, and an observation mechanism for observing the sample and the probe. A low-vibration rotary mechanism disposed in the probe holder for rotating the probe about an axis of the probe.
摘要翻译：微型样品拾取装置具有用于拾取微量样品的探针，用于保持探针的探针支架，用于在X，Y和Z的三维方向上移动探针支架的XYZ驱动机构，以及用于观察样品和探针的观察机制。一种低振动旋转机构，设置在探针保持器中，用于围绕探头的轴线旋转探针。

8. 发明授权

US08657962B2 Particle removing method, particle removing device, atomic force microscope, and charged particle beam apparatus 有权
标题翻译：粒子去除法，粒子去除装置，原子力显微镜和带电粒子束装置
公开(公告)号：US08657962B2
公开(公告)日：2014-02-25
申请号：US12139065
申请日：2008-06-13
申请人： Hiroki Hayashi , Takashi Konno , Kouji Iwasaki , Masatoshi Yasutake , Junichi Tashiro
发明人： Hiroki Hayashi , Takashi Konno , Kouji Iwasaki , Masatoshi Yasutake , Junichi Tashiro
IPC分类号： B08B7/00
CPC分类号： B25J7/00 , G01Q80/00
摘要： Small tweezers having a pair of arms openable and closable is moved closer to a sample and grips a particle attached on a surface of the sample and carries it onto an adhesion member to attach it thereto. The small tweezers are opened to release the particle and brought away from the adhesion member to leave the particle on the adhesion member. A particle removing device includes small tweezers having a pair of arms openable and closable; an opening/closing driving unit that drives the arm or arms to open/close the small tweezers; a stage mounting an adhesion member that attaches thereto a particle to withdraw the particle; and a moving mechanism that moves the small tweezers between the sample and the adhesion member mounted on the stage. Also, an atomic force microscope and a charged ion beam apparatus that include the particle removing device are disclosed.
摘要翻译：具有可打开和关闭的一对臂的小镊子移动得更靠近样品并且夹持附着在样品表面上的颗粒并将其携带到粘附构件上以将其附着在其上。打开小镊子以释放颗粒并从附着构件脱离，使颗粒留在粘合构件上。颗粒除去装置包括具有可打开和关闭的一对臂的小镊子; 打开/关闭驱动单元，驱动臂或臂打开/关闭小镊子; 安装附着于其上以吸收颗粒的粘合构件的载物台; 以及移动机构，其将小镊子移动在样品和安装在台架上的粘合构件之间。另外，还公开了包括粒子除去装置的原子力显微镜和带电离子束装置。

9. 发明授权

US08304721B2 Micro cross-section processing method 有权
标题翻译：微截面加工方法
公开(公告)号：US08304721B2
公开(公告)日：2012-11-06
申请号：US12708896
申请日：2010-02-19
申请人： Kouji Iwasaki , Tatsuya Adachi
发明人： Kouji Iwasaki , Tatsuya Adachi
IPC分类号： H01L21/302 , H01L21/66 , H01J37/26 , H01J37/30
CPC分类号： G21K5/04 , G01N23/2202 , G21K5/10 , H01J2237/31745 , H01J2237/31749
摘要： A micro cross-section processing method includes the steps of determining a linear cross-section estimated position including an observation object on a surface of the sample, irradiating the focused ion beam to the cross-section estimated position perpendicularly to or at a tilt angle to form a cross-section at a position in front of the cross-section estimated position, irradiating the focused ion beam to both ends of the cross-section to form side cuts extending to a position in rear of the cross-section estimated position, irradiating the focused ion beam to a position on the surface of the cross-section and at a position deeper than the observation object to form a bottom cut extending to a position in rear of the cross-section estimated position, irradiating the focused ion beam along from the side cuts to the cross-section estimated position to form wedges connecting to the bottom cut, and applying impact to a region in front of the cross-section estimated position of the sample to cleave the vicinity of the cross-section estimated position between the wedges and form a plane of cleavage.
摘要翻译：微型横截面处理方法包括以下步骤：确定包括在样品表面上的观察对象的线性横截面估计位置，将聚焦离子束垂直于或以倾斜角照射到横截面估计位置，在横截面估计位置前面的位置处形成横截面，将聚焦离子束照射到横截面的两端，以形成延伸到横截面估计位置后方的位置的侧切口所述聚焦离子束到达所述横截面表面上的位置，并且位于比所述观察对象更深的位置，以形成延伸到所述横截面估计位置的后方的位置的底切口，从而沿着所述聚焦离子束照射侧面切割到横截面估计位置以形成连接到底切口的楔形，并且对样品的横截面估计位置前面的区域施加冲击以切割楔块之间的横截面估计位置附近并形成切割平面。

10. 发明授权

US07345289B2 Sample support prepared by semiconductor silicon process technique 有权
标题翻译：采用半导体硅工艺制备样品
公开(公告)号：US07345289B2
公开(公告)日：2008-03-18
申请号：US11356698
申请日：2006-02-17
申请人： Kouji Iwasaki , Masanso Munekane
发明人： Kouji Iwasaki , Masanso Munekane
IPC分类号： H01L21/00 , H01J37/305 , G01N1/28
CPC分类号： H01J37/20 , G01N1/32
摘要： A sample support of the present invention is prepared such that a silicon substrate is used as a raw material, the thickness structure having a shape and a thickness of 10 μm or less is prepared using a semiconductor silicon process technique. The sample support of the present invention is adhered to a partially-cut mesh in a state that a sample portion is not adhered. Further, a plurality of portions where the samples are mounted is arranged on the same substrate.
摘要翻译：制备本发明的样品载体，使用硅衬底作为原料，使用半导体硅工艺技术制备具有10μm或更小的形状和厚度的厚度结构。本发明的样品支持体在样品部分未被粘附的状态下被粘附到部分切割的网状物上。此外，在同一基板上配置多个安装样品的部分。

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