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1. 发明授权

US4921834A Flux method of growing oxide superconductors 失效
标题翻译：生长氧化物超导体的助焊剂方法
公开(公告)号：US4921834A
公开(公告)日：1990-05-01
申请号：US149557
申请日：1988-01-28
申请人： Haruhiro Hasegawa , Ushio Kawabe , Yoshinobu Tarutani , Tokuumi Fukazawa , Toshiyuki Aida , Kazumasa Takagi
发明人： Haruhiro Hasegawa , Ushio Kawabe , Yoshinobu Tarutani , Tokuumi Fukazawa , Toshiyuki Aida , Kazumasa Takagi
IPC分类号： C04B35/45 , H01L39/12 , H01L39/24
CPC分类号： H01L39/2419 , C04B35/4504 , H01L39/126 , Y10S505/729
摘要： An oxide-superconductor improved so as to have a high critical temperature (T.sub.c) comprises an oxide having a K.sub.2 NiF.sub.4 crystalline structure similar to a perovskite crystalline structure and represented by the following formula:(Ba.sub.x Sr.sub.z La.sub.1-x-z).sub.2 Cu.sub.1-w Ag.sub.w O.sub.4(1-y)wherein 0.1

2. 发明授权

US5250506A Superconductive switching element with semiconductor channel 失效
标题翻译：具有半导体通道的超导开关元件
公开(公告)号：US5250506A
公开(公告)日：1993-10-05
申请号：US647234
申请日：1991-01-29
申请人： Shinichiroh Saitoh , Yoshinobu Tarutani , Tokuumi Fukazawa , Masahiko Hiratani , Toshikazu Nishino , Haruhiro Hasegawa , Ushio Kawabe , Kazumasa Takagi , Mitsuo Suga
发明人： Shinichiroh Saitoh , Yoshinobu Tarutani , Tokuumi Fukazawa , Masahiko Hiratani , Toshikazu Nishino , Haruhiro Hasegawa , Ushio Kawabe , Kazumasa Takagi , Mitsuo Suga
IPC分类号： H01L39/14 , H01L39/22 , B05D5/12 , H01B12/00
CPC分类号： H01L39/225 , H01L39/146
摘要： A superconductive element at least comprising first and second superconductive electrodes composed of an oxide superconductor material and a semiconductor film composed of an oxide semiconductor material put between the first and second superconductive electrodes and disposed in adjacent with the first and the second superconductive electrodes, in which the semiconductor film is formed with an oxide comprising rare earth elements other than Pr, Ba and Cu as the main ingredient element or an oxide comprising predetermined amount of rare earth elements other than Pr, predetermined amount of Pr, Ba and Cu as the main ingredient element. Extremely fine size is no more necessary to enable fabrication with the existent fine fabrication technic.
摘要翻译：一种超导元件，至少包括由氧化物超导体材料构成的第一和第二超导电极以及由位于第一和第二超导电极之间并与第一和第二超导电极相邻设置的氧化物半导体材料构成的半导体膜，其中半导体膜由包含除Pr，Ba和Cu之外的稀土元素作为主要成分的氧化物或包含预定量的Pr以外的稀土元素的氧化物形成，预定量的Pr，Ba和Cu作为主要成分元件。非常精细的尺寸不再需要使用现有的精细制造技术进行制造。

3. 发明授权

US5096882A Process for controlling oxygen content of superconductive oxide, superconductive device and process for production thereof 失效
标题翻译：超导型氧化物的氧含量控制方法，超导型设备及其生产工艺
公开(公告)号：US5096882A
公开(公告)日：1992-03-17
申请号：US178905
申请日：1988-04-07
申请人： Takahiko Kato , Katsuzo Aihara , Jiro Kuniya , Yutaka Misawa , Yoshihide Wadayama , Masahiro Ogihara , Toshikazu Nishino , Ushio Kawabe , Haruhiro Hasegawa , Kazumasa Takagi , Tokuumi Fukazawa , Katsuki Miyauchi
发明人： Takahiko Kato , Katsuzo Aihara , Jiro Kuniya , Yutaka Misawa , Yoshihide Wadayama , Masahiro Ogihara , Toshikazu Nishino , Ushio Kawabe , Haruhiro Hasegawa , Kazumasa Takagi , Tokuumi Fukazawa , Katsuki Miyauchi
IPC分类号： C01G3/00 , C01B13/14 , C01G1/00 , C04B35/00 , C04B35/45 , C04B41/80 , H01B12/00 , H01B13/00 , H01F6/06 , H01F41/04 , H01L39/12 , H01L39/14 , H01L39/24
CPC分类号： H01L39/2464 , H01F41/048 , H01F6/06 , H01L39/143 , H01L39/249 , H01L39/2496 , Y10S505/725 , Y10S505/73
摘要： A process for controlling an oxygen content of a non-superconductive or superconductive oxide is provided, in which a beam of particles such as ions, electrons or neutrons or an electromagnetic radiation is applied to the non-superconductive or superconductive oxide of a perovskite type such as YBa.sub.2 Cu.sub.3 O.sub.7-x, thereby increasing or reducing the oxygen content of the oxide at the sites of oxygen in the crystal lattice of the oxide. Furthermore, a superconductive device such as a superconductive magnet, superconductive power transmission wire, superconductive transformer, superconductive shield, permanent current switch and electronic element is made by utilizing the process for controlling the oxygen concentration of the superconductive oxide.

4. 发明授权

US06310488B1 Superconductive single flux quantum logic circuit 失效
标题翻译：超导单通量子量子逻辑电路
公开(公告)号：US06310488B1
公开(公告)日：2001-10-30
申请号：US09451910
申请日：1999-12-01
申请人： Haruhiro Hasegawa , Yoshinobu Tarutani , Tokuumi Fukazawa , Kazumasa Takagi
发明人： Haruhiro Hasegawa , Yoshinobu Tarutani , Tokuumi Fukazawa , Kazumasa Takagi
IPC分类号： H03K19195
CPC分类号： H03K19/1952
摘要： In a superconductive single flux quantum logic circuit having two superconductive closed loops each comprising a Josephson junction and one or more inductors, a load inductance part is comprised of an inductor and a Josephson junction and two or more means for supplying a signal current are included. The load inductance part is made by one or more inductors and means for applying flux via the inductors is included.
摘要翻译：在具有两个包含约瑟夫逊结和一个或多个电感器的两个超导闭环的超导单通量量子逻辑电路中，负载电感部分包括电感器和约瑟夫逊结，并且包括用于提供信号电流的两个或更多个装置。负载电感部分由一个或多个电感器制成，并且包括用于通过电感器施加磁通的装置。

5. 发明授权

US06486756B2 Superconductor signal amplifier 失效
标题翻译：超导体信号放大器
公开(公告)号：US06486756B2
公开(公告)日：2002-11-26
申请号：US09816240
申请日：2001-03-26
申请人： Yoshinobu Tarutani , Kazuo Saitoh , Kazumasa Takagi , Yoshihisa Soutome , Tokuumi Fukazawa , Akira Tsukamoto
发明人： Yoshinobu Tarutani , Kazuo Saitoh , Kazumasa Takagi , Yoshihisa Soutome , Tokuumi Fukazawa , Akira Tsukamoto
IPC分类号： H03F1700
CPC分类号： H03K19/1952 , H01L27/18 , H03F19/00
摘要： A superconductor signal amplifier which receives an extremely small high-frequency signal having a frequency of tens of GHz generated in a superconductive circuit, amplifies the voltage of the high-frequency signal without a decrease in frequency, and outputs the thus amplified high-frequency signal from the superconductive circuit. At an output part of a single flux quantum circuit using a flux quantum as a binary information carrier, there are provided a superconductive junction line for flux quantum transmission and a splitter for simultaneously producing two flux quanta from a flux quantum. According to the number of plural series-connected SQUIDs, a plurality of flux quantum signals are generated and input to the plural series-connected SQUIDs so that the SQUIDs are simultaneously switched to a voltage state. In each SQUID pair comprising two SQUIDs, a part of an inductor is shared by the two SQUIDs for reduction in inductance, thereby increasing an output voltage of the series-connected SQUIDs. Furthermore, a magnetic shielding film formed under each SQUID is electrically isolated from ground to prevent a signal delay due to a parasitic capacitance.
摘要翻译：接收在超导电路中产生的具有数十GHz频率的极小的高频信号的超导体信号放大器放大高频信号的电压而不降低频率，并输出这样放大的高频信号从超导电路。在使用磁通量子作为二进制信息载体的单个量子电路的输出部分，提供了用于磁通量子传输的超导结线和用于从磁通量子同时产生两个通量量子的分离器。根据多个串联SQUID的数量，产生多个通量量子信号并将其输入到多个串联连接的SQUID，使得SQUID同时切换到电压状态。在包含两个SQUID的每个SQUID对中，电感器的一部分由两个SQUID共享以减小电感，从而增加串联连接的SQUID的输出电压。此外，形成在每个SQUID下方的磁屏蔽膜与地电隔离以防止由寄生电容引起的信号延迟。

6. 发明授权

US5380704A Superconducting field effect transistor with increased channel length 失效
标题翻译：超导场效应晶体管具有增加的沟道长度
公开(公告)号：US5380704A
公开(公告)日：1995-01-10
申请号：US113006
申请日：1993-08-30
申请人： Yoshinobu Tarutani , Tokuumi Fukazawa , Uki Kabasawa , Kazumasa Takagi , Akira Tsukamoto , Masahiko Hiratani , Toshikazu Nishino
发明人： Yoshinobu Tarutani , Tokuumi Fukazawa , Uki Kabasawa , Kazumasa Takagi , Akira Tsukamoto , Masahiko Hiratani , Toshikazu Nishino
IPC分类号： H01L29/43 , H01L29/49 , H01L29/786 , H01L39/22 , B05D5/12 , H01B12/00
CPC分类号： H01L29/78696 , H01L29/437 , H01L29/4908 , H01L29/78645 , H01L29/7869 , H01L39/146
摘要： Disclosed herein is a superconducting field effect transistor (FET) which has at least an active region formed from a film of oxide normal conductor, a plurality of electrodes formed from a film of oxide superconductor, and a means to control the current which flows between the electrodes through the active region. Having a much greater electrode distance than the conventional superconducting device, it can be produced easily by lithography without resorting to special techniques.
摘要翻译：本发明公开了一种超导场效应晶体管（FET），其至少具有由氧化物正导体膜形成的有源区，由氧化物超导体的膜形成的多个电极，以及控制在氧化物超导体之间流动的电流的装置电极通过有源区。具有比常规超导装置更大的电极距离，其可以通过光刻而容易地制造，而不需要采用特殊技术。

7. 发明授权

US5077266A Method of forming weak-link Josephson junction, and superconducting device employing the junction 失效
标题翻译：形成弱连接JOSEPHSON JUNCTION的方法和使用连接的超级设备
公开(公告)号：US5077266A
公开(公告)日：1991-12-31
申请号：US405737
申请日：1989-09-11
申请人： Kazumasa Takagi , Tokuumi Fukazawa , Yoshimi Kawanami , Yuuichi Madokoro , Katsuki Miyauchi , Toshiyuki Aida , Yukio Honda , Masaaki Futamoto , Masahiko Hiratani
发明人： Kazumasa Takagi , Tokuumi Fukazawa , Yoshimi Kawanami , Yuuichi Madokoro , Katsuki Miyauchi , Toshiyuki Aida , Yukio Honda , Masaaki Futamoto , Masahiko Hiratani
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/2496 , Y10S505/701 , Y10S505/702 , Y10S505/729 , Y10T29/41
摘要： A weak-link Josephson junction is of the type employing a thin film of an oxide superconductor, in which a crystal grain boundary produced reflecting an artificial crystal defect is utilized as the weak-link junction. The crystal grain boundary is formed concretely by a method in which atoms of different species are deposited on the predetermined part of the surface of a substrate, the predetermined part of the surface of a substrate is disturbed, or parts of different crystal face orientations are formed at the surface of a substrate, whereupon the superconducting thin film is epitaxially grown on the substrate, or by a method in which the predetermined part of the superconducting thin film, epitaxially grown on a substrate, is diffused with atoms of different species hampering a superconductivity, or the predetermined part of the superconducting thin film is disturbed, whereupon the superconducting thin film is annealed.

8. 发明授权

US5316585A Method for fabricating superconducting materials and superconductive thin films 失效
标题翻译：制造超导材料和超导薄膜的方法
公开(公告)号：US5316585A
公开(公告)日：1994-05-31
申请号：US560844
申请日：1990-07-24
申请人： Yukio Okamoto , Toshiyuki Aida , Katsuki Miyauchi , Kazumasa Takagi , Tokuumi Fukazawa , Shinji Takayama
发明人： Yukio Okamoto , Toshiyuki Aida , Katsuki Miyauchi , Kazumasa Takagi , Tokuumi Fukazawa , Shinji Takayama
IPC分类号： C23C4/10 , C23C14/00 , C23C14/08 , C23C14/32 , C23C16/40 , C23C16/517 , H01L39/24
CPC分类号： C23C14/0036 , C23C14/0031 , C23C14/087 , C23C14/32 , C23C16/408 , C23C16/517 , C23C4/11 , H01L39/2422 , H01L39/2445 , H01L39/2451 , Y10S505/73 , Y10S505/732 , Y10S505/786
摘要： Chemical reactions of superconducting raw materials with active oxygen atoms and their charged particles are accelerated by using at least oxygen plasma in the fabrication process of a superconductive body. Thereby an ionic crystal is grown in a short time, which provides stable superconducting materials of high quality such as high critical temperature and low resistivity. In another aspect, a substrate is irradiated simultaneously with streams of vapor of metal elements, of which a superconductive body is to be composed, and a stream of gas of ions generated in a plasma chamber and film growth is effected while keeping the substrate at a temperature higher than 400.degree. C. to produce a ceramic type superconductive thin film.
摘要翻译：具有活性氧原子的超导原料及其带电粒子的化学反应通过在超导体的制造过程中至少使用氧等离子体来加速。因此，离子晶体在短时间内生长，其提供高质量的稳定的超导材料，例如高临界温度和低电阻率。在另一方面，一种衬底被同时照射要形成超导体的金属元素的蒸汽流，并且在将衬底保持在一个等离子体室的同时实现在等离子体室中产生的离子气流和膜生长温度高于400℃，生成陶瓷型超导薄膜。

9. 发明授权

US4950642A Method for fabricating superconducting oxide thin films by activated reactive evaporation 失效
标题翻译：通过活性反应蒸发制造超导氧化物薄膜的方法
公开(公告)号：US4950642A
公开(公告)日：1990-08-21
申请号：US228750
申请日：1988-08-05
申请人： Yukio Okamoto , Toshiyuki Aida , Katsuki Miyauchi , Kazumasa Takagi , Tokuumi Fukazawa , Shinji Takayama
发明人： Yukio Okamoto , Toshiyuki Aida , Katsuki Miyauchi , Kazumasa Takagi , Tokuumi Fukazawa , Shinji Takayama
IPC分类号： C23C4/10 , C23C14/00 , C23C14/08 , C23C14/32 , C23C16/40 , C23C16/517 , H01L39/24
CPC分类号： C23C14/0036 , C23C14/0031 , C23C14/087 , C23C14/32 , C23C16/408 , C23C16/517 , C23C4/11 , H01L39/2422 , H01L39/2445 , H01L39/2451 , Y10S505/73 , Y10S505/732 , Y10S505/786
摘要： A process for fabricating a superconducting oxide thin film is disclosed which comprises the steps of separately evaporating metal elements, of which the superconducting oxide thin film with a desired stoichiometry is to be composed, to a substrate and simultaneously irradiating the substrate with oxygen plasma generated by RF wave or ECR microwave to form a crystalline oxide film without further annealing.

10. 发明授权

US5550389A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US5550389A
公开(公告)日：1996-08-27
申请号：US171869
申请日：1993-12-22
申请人： Toshikazu Nishino , Mutsuko Hatano , Haruhiro Hasegawa , Hideaki Nakane , Ushio Kawabe , Kazuo Saitoh , Mitsuo Suga , Kazumasa Takagi
发明人： Toshikazu Nishino , Mutsuko Hatano , Haruhiro Hasegawa , Hideaki Nakane , Ushio Kawabe , Kazuo Saitoh , Mitsuo Suga , Kazumasa Takagi
IPC分类号： H01L39/14 , H01L29/06
CPC分类号： H01L39/145
摘要： A superconducting device low in power dissipation and high in operating speed is fabricated by use of a combination of a superconductor material and a semiconductor material. The superconducting device having a low power dissipation and high operating speed characteristic according to the present invention is suitable for configuring a large-scale integrated circuit.
摘要翻译：通过使用超导体材料和半导体材料的组合来制造功耗低且工作速度高的超导装置。根据本发明的具有低功耗和高工作速度特性的超导装置适用于配置大规模集成电路。

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