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1. 发明申请

US20090038960A1 APPARATUS AND METHOD OF ELECTROLYTIC REMOVAL OF METALS FROM A WAFER SURFACE 有权
标题翻译：从WAFER表面电解去除金属的装置和方法
公开(公告)号：US20090038960A1
公开(公告)日：2009-02-12
申请号：US11834971
申请日：2007-08-07
申请人： Hariklia Deligianni , Laertis Economikos , Catherine Ivers , Xiaoyan Shao
发明人： Hariklia Deligianni , Laertis Economikos , Catherine Ivers , Xiaoyan Shao
IPC分类号： C25F5/00 , B23H3/00 , C25F7/00
CPC分类号： B23H5/08
摘要： An apparatus and method designed to remove metals from a wafer surface using an electrolytic removal process. The apparatus includes a conductive pad having a plurality of alternating cathodes and anodes provided with a power source. The conductive pad is structured and configured to contact all metal islands on a surface of the wafer. Gaps are provided between pairs of the plurality of alternating cathodes and anodes.
摘要翻译：一种设计用于使用电解去除工艺从晶片表面去除金属的设备和方法。该装置包括具有多个具有电源的交替阴极和阳极的导电焊盘。导电焊盘被构造和配置成接触晶片表面上的所有金属岛。在多个交替阴极和阳极的成对之间提供间隙。

2. 发明授权

US07993498B2 Apparatus and method of electrolytic removal of metals from a wafer surface 有权
标题翻译：从晶片表面电解去除金属的装置和方法
公开(公告)号：US07993498B2
公开(公告)日：2011-08-09
申请号：US11834971
申请日：2007-08-07
申请人： Hariklia Deligianni , Laertis Economikos , Catherine Ivers , Xiaoyan Shao
发明人： Hariklia Deligianni , Laertis Economikos , Catherine Ivers , Xiaoyan Shao
IPC分类号： C25D17/00
CPC分类号： B23H5/08
摘要： An apparatus and method designed to remove metals from a wafer surface using an electrolytic removal process. The apparatus includes a conductive pad having a plurality of alternating cathodes and anodes provided with a power source. The conductive pad is structured and configured to contact all metal islands on a surface of the wafer. Gaps are provided between pairs of the plurality of alternating cathodes and anodes.
摘要翻译：一种设计用于使用电解去除工艺从晶片表面去除金属的设备和方法。该装置包括具有多个具有电源的交替阴极和阳极的导电焊盘。导电焊盘被构造和配置成接触晶片表面上的所有金属岛。在多个交替阴极和阳极的成对之间提供间隙。

3. 发明申请

US20100051474A1 METHOD AND COMPOSITION FOR ELECTRO-CHEMICAL-MECHANICAL POLISHING 审中-公开
标题翻译：电化学机械抛光方法与组合
公开(公告)号：US20100051474A1
公开(公告)日：2010-03-04
申请号：US12548893
申请日：2009-08-27
申请人： Panayotis C. Andricacos , Caliopi Andricacos , Donald F. Canaperi , Emanuel I. Cooper , John M. Cotte , Hariklia Deligianni , Laertis Economikos , Daniel C. Edelstein , Silvia Franz , Balasubramanian Pranatharthiharan , Mahadevaiyer Krishnan , Andrew P. Mansson , Erick G. Walton , Alan C. West
发明人： Panayotis C. Andricacos , Caliopi Andricacos , Donald F. Canaperi , Emanuel I. Cooper , John M. Cotte , Hariklia Deligianni , Laertis Economikos , Daniel C. Edelstein , Silvia Franz , Balasubramanian Pranatharthiharan , Mahadevaiyer Krishnan , Andrew P. Mansson , Erick G. Walton , Alan C. West
IPC分类号： B23H5/06
CPC分类号： C25F3/02 , B23H5/08 , C09G1/04 , H01L21/32125
摘要： Methods and compositions for electro-chemical-mechanical polishing (e-CMP) of silicon chip interconnect materials, such as copper, are provided. The methods include the use of compositions according to the invention in combination with pads having various configurations.
摘要翻译：提供了诸如铜之类的硅芯片互连材料的电化学机械抛光（e-CMP）的方法和组合物。所述方法包括使用根据本发明的组合物与具有各种构型的垫组合。

4. 发明授权

US06776885B2 Integrated plating and planarization apparatus having a variable-diameter counterelectrode 有权
标题翻译：具有可变直径对电极的集成电镀和平坦化装置
公开(公告)号：US06776885B2
公开(公告)日：2004-08-17
申请号：US10294199
申请日：2002-11-14
申请人： Laertis Economikos , Hariklia Deligianni , John M. Cotte , Panayotis C. Andricacos
发明人： Laertis Economikos , Hariklia Deligianni , John M. Cotte , Panayotis C. Andricacos
IPC分类号： C25D1400
CPC分类号： C25D5/48 , C25D17/00 , C25D17/001 , C25D17/10
摘要： An apparatus for plating and planarizing metal on a substrate includes a plurality of dispensing segments, each having at least one hole for dispensing electroplating solution onto the substrate. The dispensing segments form a circular counterelectrode and are movable with respect to each other during an electroplating process, so that the counterelectrode has a variable diameter. The electroplating solution is thus dispensed on an annular portion of the substrate having a diameter corresponding to the diameter of the counterelectrode; accordingly, the variable-diameter counterelectrode permits localized delivery of the plating solution to the substrate.
摘要翻译：用于在基底上电镀和平面化金属的装置包括多个分配段，每个分配段具有至少一个用于将电镀溶液分配到衬底上的孔。分配段形成圆形反电极并且可以在电镀过程期间相对于彼此移动，使得反电极具有可变的直径。因此，电镀溶液被分配在具有对应于反电极的直径的直径的基底的环形部分上; 因此，可变直径对电极允许将电镀液局部输送到基板。

5. 发明申请

US20060163083A1 Method and composition for electro-chemical-mechanical polishing 审中-公开
标题翻译：电化学机械抛光的方法和组成
公开(公告)号：US20060163083A1
公开(公告)日：2006-07-27
申请号：US11038236
申请日：2005-01-21
申请人： Panayotis Andricacos , Donald Canaperi , Emanuel Cooper , John Cotte , Hariklia Deligianni , Laertis Economikos , Daniel Edelstein , Silvia Franz , Balasubramanian Pranatharthiharan , Mahadevaiyer Krishnan , Andrew Mansson , Erick Walton , Alan West , Caliopi Andricacos
发明人： Panayotis Andricacos , Donald Canaperi , Emanuel Cooper , John Cotte , Hariklia Deligianni , Laertis Economikos , Daniel Edelstein , Silvia Franz , Balasubramanian Pranatharthiharan , Mahadevaiyer Krishnan , Andrew Mansson , Erick Walton , Alan West , Caliopi Andricacos
IPC分类号： B23H3/00
CPC分类号： C25F3/02 , B23H5/08 , C09G1/04 , H01L21/32125
摘要： Methods and compositions for electro-chemical-mechanical polishing (e-CMP) of silicon chip interconnect materials, such as copper, are provided. The methods include the use of compositions according to the invention in combination with pads having various configurations.
摘要翻译：提供了诸如铜之类的硅芯片互连材料的电化学机械抛光（e-CMP）的方法和组合物。所述方法包括使用根据本发明的组合物与具有各种构型的垫组合。

6. 发明授权

US06773570B2 Integrated plating and planarization process and apparatus therefor 有权
标题翻译：集成电镀和平面化处理及其设备
公开(公告)号：US06773570B2
公开(公告)日：2004-08-10
申请号：US10294200
申请日：2002-11-14
申请人： Laertis Economikos , Hariklia Deligianni , John M. Cotte , Henry J. Grabarz , Bomy Chen
发明人： Laertis Economikos , Hariklia Deligianni , John M. Cotte , Henry J. Grabarz , Bomy Chen
IPC分类号： C25D522
CPC分类号： C25D7/123 , C25D5/48 , C25D17/001 , H01L21/2885 , H01L21/3212 , H01L21/32125 , H01L21/7684 , Y10S205/917
摘要： A method and apparatus are described for performing both electroplating of a metal layer and planarization of the layer on a substrate. Electroplating and electroetching of metal (such as copper) are performed in a repeated sequence, followed by chemical-mechanical polishing. An electroplating solution, electroetching solution, and a non-abrasive slurry are dispensed on a polishing pad in the respective process steps. The substrate is held against the pad with a variable force in accordance with the process, so that the spacing between substrate and pad may be less during electroplating than during electroetching.
摘要翻译：描述了用于执行金属层的电镀和在衬底上的层的平坦化的方法和装置。以重复的顺序进行金属（如铜）的电镀和电蚀刻，然后进行化学机械抛光。电镀溶液，电蚀溶液和非研磨浆料在相应的工艺步骤中分配在抛光垫上。根据该工艺，衬底以可变的力保持抵靠衬垫，使得电镀期间衬底和衬垫之间的间隔可能比在电蚀期间更小。

7. 发明授权

US08143166B2 Polishing method with inert gas injection 有权
标题翻译：惰性气体注入抛光方法
公开(公告)号：US08143166B2
公开(公告)日：2012-03-27
申请号：US12046151
申请日：2008-03-11
申请人： Feng Zhao , Wu Ping Liu , John Sudijono , Laertis Economikos , Lawrence A. Clevenger
发明人： Feng Zhao , Wu Ping Liu , John Sudijono , Laertis Economikos , Lawrence A. Clevenger
IPC分类号： H01L21/461
CPC分类号： H01L21/31053 , H01L21/3212
摘要： A polishing process in a semiconductor device fabrication process employs a polishing composition in which a gaseous phase is created within the polishing composition. During a polishing process, the gaseous phase dynamically responds to changes in the surface profile of the material undergoing removal by chemical and abrasive action during polishing. The inert gas bubble density dynamically increases in proximity to surface region of the substrate being polished that are prone to dishing and erosion. The increased inert gas bubble density operates to reduce the polish removal rate relative to other regions of the substrate. The dynamic action of the gaseous phase within the polishing composition functions to selectively reduce the localized polish removal rate such that a uniformly smooth and flat polished surface is obtained that is independent of the influence of pattern density during the polishing process.
摘要翻译：在半导体器件制造工艺中的抛光工艺使用其中在抛光组合物内产生气相的抛光组合物。在抛光过程中，气相通过抛光期间的化学和磨蚀作用动态地响应经历去除的材料的表面轮廓的变化。惰性气泡密度在被抛光的基底的表面区域附近动态增加，这些表面区域易于发生凹陷和侵蚀。增加的惰性气泡密度用于降低相对于基底的其它区域的抛光去除速率。抛光组合物中气相的动态作用用于选择性地降低局部抛光去除速率，使得获得与抛光过程中图案密度的影响无关的均匀光滑和平坦的抛光表面。

8. 发明申请

US20090233444A1 POLISHING METHOD WITH INERT GAS INJECTION 有权
标题翻译：具有惰性气体注入的抛光方法
公开(公告)号：US20090233444A1
公开(公告)日：2009-09-17
申请号：US12046151
申请日：2008-03-11
申请人： Feng Zhao , Wu Ping Liu , John Sudijono , Laertis Economikos , Lawrence A. Clevenger
发明人： Feng Zhao , Wu Ping Liu , John Sudijono , Laertis Economikos , Lawrence A. Clevenger
IPC分类号： H01L21/306 , C09K13/00
CPC分类号： H01L21/31053 , H01L21/3212
摘要： A polishing process in a semiconductor device fabrication process employs a polishing composition in which a gaseous phase is created within the polishing composition. During a polishing process, the gaseous phase dynamically responds to changes in the surface profile of the material undergoing removal by chemical and abrasive action during polishing. The inert gas bubble density dynamically increases in proximity to surface region of the substrate being polished that are prone to dishing and erosion. The increased inert gas bubble density operates to reduce the polish removal rate relative to other regions of the substrate. The dynamic action of the gaseous phase within the polishing composition functions to selectively reduce the localized polish removal rate such that a uniformly smooth and flat polished surface is obtained that is independent of the influence of pattern density during the polishing process.
摘要翻译：在半导体器件制造工艺中的抛光工艺使用其中在抛光组合物内产生气相的抛光组合物。在抛光过程中，气相通过抛光期间的化学和磨蚀作用动态地响应经历去除的材料的表面轮廓的变化。惰性气泡密度在被抛光的基底的表面区域附近动态增加，这些表面区域易于发生凹陷和侵蚀。增加的惰性气泡密度用于降低相对于基底的其它区域的抛光去除速率。抛光组合物中气相的动态作用用于选择性地降低局部抛光去除速率，使得获得与抛光过程中图案密度的影响无关的均匀光滑和平坦的抛光表面。

9. 发明申请

US20080051008A1 APPARATUS AND METHOD FOR CHEMICAL MECHANICAL POLISHING WITH IMPROVED UNIFORMITY 审中-公开
标题翻译：具有改进均匀性的化学机械抛光的装置和方法
公开(公告)号：US20080051008A1
公开(公告)日：2008-02-28
申请号：US11466133
申请日：2006-08-22
申请人： Laertis Economikos , Deok-Kee Kim , Byeongju Park
发明人： Laertis Economikos , Deok-Kee Kim , Byeongju Park
IPC分类号： B24B49/00 , B24B7/30 , B24B29/00
CPC分类号： B24B37/042 , B24B1/005
摘要： A chemical mechanical polishing (CMP) apparatus includes a workpiece carrier configured for retaining a workpiece thereupon, a polishing platen configured for retaining a polishing pad thereupon, and an electromagnetic coil surrounding a periphery of the workpiece carrier. The electromagnetic coil is configured to provide a magnetic field of alternating polarity to cause the rotation of ferromagnetic slurry particles disposed on the workpiece to facilitate polishing of the workpiece.
摘要翻译：化学机械抛光（CMP）装置包括构造成用于保持其上的工件的工件载体，被配置为用于将抛光垫保持在其上的抛光台和围绕工件载体的周边的电磁线圈。电磁线圈被配置成提供具有交替极性的磁场，以引起设置在工件上的铁磁性浆料颗粒的旋转，以便于抛光工件。

10. 发明申请

US20050079709A1 PLANARIZATION SYSTEM AND METHOD USING A CARBONATE CONTAINING FLUID 失效
标题翻译：使用含有碳酸盐的流化床系统和方法
公开(公告)号：US20050079709A1
公开(公告)日：2005-04-14
申请号：US10605610
申请日：2003-10-13
申请人： Donald Delehanty , James Hannah , Daniel Heenan , Fen Jamin , Laertis Economikos
发明人： Donald Delehanty , James Hannah , Daniel Heenan , Fen Jamin , Laertis Economikos
IPC分类号： B24B7/22 , B24B37/04 , C09G1/04 , H01L21/302 , H01L21/3105 , H01L21/461
CPC分类号： C09G1/04 , B24B7/228 , H01L21/31053
摘要： Disclosed herein are a system and method of polishing a layer of a substrate. The disclosed method includes providing a polishing apparatus adapted to impart relative movement between a polishing pad and a substrate having a first layer to be polished; providing a liquid medium having a pH between 4 and 11 to an interface between the substrate and the polishing pad, the liquid medium including a pH controlling substance including at least one of an acid and a base, a carbonate and a stabilizer additive comprising at least one selected from the group consisting of amino acids and polyacrylic acid; and moving at least one of the substrate and the polishing pad relative to the other to polish the layer of the substrate.
摘要翻译：本文公开了一种抛光衬底层的系统和方法。所公开的方法包括提供适于在抛光垫和具有要抛光的第一层的基底之间施加相对运动的抛光装置; 提供pH在4和11之间的液体介质到基底和抛光垫之间的界面，液体介质包括pH控制物质，其包括酸和碱中的至少一种，碳酸盐和稳定剂添加剂，至少包括一个选自氨基酸和聚丙烯酸; 并且相对于另一个移动衬底和抛光垫中的至少一个以抛光衬底的层。

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