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1. 发明授权

US4522893A Contact device for releasably connecting electrical components 失效
标题翻译：用于可释放地连接电气部件的接触装置
公开(公告)号：US4522893A
公开(公告)日：1985-06-11
申请号：US433611
申请日：1982-10-12
申请人： Harald Bohlen , Gerhard Kaus , Johann Greschner , Joachim H. Keyser , Werner Kulcke
发明人： Harald Bohlen , Gerhard Kaus , Johann Greschner , Joachim H. Keyser , Werner Kulcke
IPC分类号： H01R24/00 , H01L23/48 , H01L23/532 , H01R12/18 , H01R13/02 , H01J17/00
CPC分类号： H01L23/53271 , H01L24/72 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01061 , H01L2924/01076 , H01L2924/01082 , H01L2924/12033 , H01L2924/14 , Y10T29/49121 , Y10T428/12674
摘要： Two electrical components 1 and 2 containing electric conductor lines 3 and 4 are interconnected in that one component 2 comprises silicon contact fingers 5 and a back part 6 made of silicon and carrying the fingers 5. Fingers 5 and back part 6 preferably represent an integer component of an integrated circuit provided on a monocrystalline substrate and to be connected to other electrical components. Fingers 5 and back part 6 are preferably made in accordance with micromechanical silicon semiconductor technology.
摘要翻译：包含电导体线3和4的两个电气部件1和2被互连，因为一个部件2包括硅接触指5和由硅制成并携带指状物5的后部6.手指5和后部6优选地表示整数分量设置在单晶衬底上并连接到其它电气部件的集成电路。手指5和背部6优选地根据微机械硅半导体技术制造。

2. 发明授权

US4169230A Method of exposure by means of corpuscular beam shadow printing 失效
标题翻译：通过粒子束阴影印刷曝光的方法
公开(公告)号：US4169230A
公开(公告)日：1979-09-25
申请号：US904069
申请日：1978-05-08
申请人： Harald Bohlen , Johann Greschner , Werner Kulcke , Peter Nehmiz
发明人： Harald Bohlen , Johann Greschner , Werner Kulcke , Peter Nehmiz
IPC分类号： H01L21/027 , G03F1/20 , H01J37/30 , A61K27/02
CPC分类号： G03F1/20 , H01J37/3007
摘要： A method of exposure of a target object by means of corpuscular beam shadow printing through a mask with several complementary zones wherein the beam, shiftable and tiltable about a point in the mask plane and arranged in parallel at a small distance from the target object, is first impinged upon a first of the complementary zones, then the object is shifted under a second of the complementary zones, and the positioning of the beam is changed so that any deviation of the actual position of the second area of the target object to be exposed from its nominal position is determined and compensated for by tilting the beam about a point substantially in the mask plane.
摘要翻译：通过具有多个互补区域的掩模通过粒子束阴影印刷对目标物体进行曝光的方法，其中围绕掩模平面中的点移动并可倾斜并且与目标对象距离小的距离平行设置的光束是首先撞击第一互补区域，然后物体在互补区域的第二个下移动，并且改变梁的定位，使得目标物体的第二区域的实际位置的任何偏离将被暴露通过将光束围绕基本上在掩模平面中的点倾斜来确定和补偿其标称位置。

3. 发明授权

US4370554A Alignment system for particle beam lithography 失效
标题翻译：粒子束光刻对准系统
公开(公告)号：US4370554A
公开(公告)日：1983-01-25
申请号：US183118
申请日：1980-09-02
申请人： Harald Bohlen , Johann Greschner , Werner Kulcke , Peter Nehmiz
发明人： Harald Bohlen , Johann Greschner , Werner Kulcke , Peter Nehmiz
IPC分类号： H01J37/304 , H01L21/68 , G01N23/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01L21/682
摘要： The mutual alignment of mask and substrate patterns of a specific semiconductor structure are attained by use of a plurality of individual marks in a specific geometric position with respect to each other. By the arrangement of openings in the alignment pattern of the mask, the broad electron beam is split into a multitude of individual beams which interact with alignment marks on the substrate. The interaction is used to generate a coincidence signal. The signal to noise ratio of this arrangement is determined by the overall current and is comparable to that of a thin concentrated electron beam. Registration is effected in a small amount of time and the disadvantageous effects of the high current density used in the raster process are not a factor. In a preferred embodiment, the alignment pattern of the mask is a matrix with center spacings of openings increasing upon advance in two directions perpendicular to each other such that no distance can be represented by the sum of smaller distances. Alignment signals are provided by detecting either absorbed or reflected electrons. A plurality of detectors in the mask are used to detect the reflected electrons.
摘要翻译：通过使用相对于彼此的特定几何位置中的多个单独的标记来获得特定半导体结构的掩模和衬底图案的相互对准。通过在掩模的对准图案中布置开口，宽电子束被分成与基板上的对准标记相互作用的多个单独的光束。该交互用于产生符合信号。该布置的信噪比由总电流确定，并且与薄的集中电子束的信噪比相当。注册在少量时间内进行，并且在光栅处理中使用的高电流密度的不利影响不是因素。在优选实施例中，掩模的对准图案是矩阵，其中开口的中心间隔在彼此垂直的两个方向上预先增加，使得距离可以由较小距离的和表示。通过检测吸收或反射的电子来提供对准信号。掩模中的多个检测器用于检测反射的电子。

4. 发明授权

US4334156A Method of shadow printing exposure 失效
标题翻译：阴影印刷曝光方法
公开(公告)号：US4334156A
公开(公告)日：1982-06-08
申请号：US70453
申请日：1979-08-28
申请人： Harald Bohlen , Helmut Engelke , Werner Kulcke , Peter Nehmiz , Johann Greschner
发明人： Harald Bohlen , Helmut Engelke , Werner Kulcke , Peter Nehmiz , Johann Greschner
IPC分类号： H01L21/027 , H01J37/30 , H01J37/304 , H01J37/00
CPC分类号： H01J37/3045 , H01J37/3007
摘要： A method of pattern exposing an energy beam sensitive target surface to a particle beam by proximity printing, wherein mask alignment errors such as lateral deviations, skew and linear distortions are determined and are effectively corrected by scanning the mask area being transferred with a controllably tilted particle beam, the particle beam having a diameter which is small compared to the area of the mask being scanned. At each scan point the particle beam is controllably tilted in the same azimuth direction as the alignment error for that point and by a tilt angle (taken with respect to the normal direction of the target surface) which has a tangent equal to the product of the magnitude of the alignment error and the separation between the mask and target surface at that point.
摘要翻译：通过接近印刷将能量束敏感目标表面图案曝光到粒子束的方法，其中确定了诸如横向偏离，偏斜和线性失真的掩模对准误差，并且通过用可控倾斜的粒子扫描掩模区域来有效地校正光束，粒子束的直径与被扫描的掩模的面积相比较小。在每个扫描点处，粒子束在与该点的对准误差相同的方位角方向上可控地倾斜，并且倾斜角（相对于目标表面的法线方向），该角度等于在该点处的对准误差的大小以及掩模和目标表面之间的间隔。

5. 发明授权

US4267259A Exposure process 失效
标题翻译：曝光过程
公开(公告)号：US4267259A
公开(公告)日：1981-05-12
申请号：US12634
申请日：1979-02-16
申请人： Harald Bohlen , Johann Greschner , Werner Kulcke , Peter Nehmiz
发明人： Harald Bohlen , Johann Greschner , Werner Kulcke , Peter Nehmiz
IPC分类号： G03F7/095 , H01L21/027 , B05D3/06 , G03F7/26
CPC分类号： H01L21/0277 , G03F7/095 , H01L21/0278 , Y10S430/168
摘要： Radiation sensitive layers are x-ray exposed by providing a metal mask pattern on the layer through which the layer is exposed. The metal mask pattern is formed by applying a blanket metal layer to the radiation sensitive layer followed by an electron beam sensitive resist layer which is patterned by an electron beam exposure process. The exposed portions of the metal layer are then etched away to form the metal mask pattern.
摘要翻译：辐射敏感层通过在层暴露的层上提供金属掩模图案而被X射线曝光。金属掩模图案是通过对辐射敏感层施加覆盖金属层而形成的，随后是通过电子束曝光工艺构图的电子束敏感抗蚀剂层。然后将金属层的暴露部分蚀刻掉以形成金属掩模图案。

6. 发明授权

US4520314A Probe head arrangement for conductor line testing with at least one probe head comprising a plurality of resilient contacts 失效
标题翻译：用于具有至少一个包括多个弹性触点的探针头的导线测试的探针头布置
公开(公告)号：US4520314A
公开(公告)日：1985-05-28
申请号：US433341
申请日：1982-10-08
申请人： Karl Asch , Johann Greschner , Michael Kallmeyer , Werner Kulcke
发明人： Karl Asch , Johann Greschner , Michael Kallmeyer , Werner Kulcke
IPC分类号： G01R1/06 , G01R1/073 , G01R31/02
CPC分类号： G01R1/073 , G01R1/07307 , G01R1/07357
摘要： A probe head arrangement for contacting a plurality of closely adjacent conductor lines 2 comprises a minimum of one probe head 3, where a plurality of fingers 4 together with a back 5 are made in one piece of monocrystalline silicon in semiconductor technique. A plurality of such probe heads 3 are composed to form a tester. At the beginning of each test it is determined which fingers 4 are to be, and are not to be placed onto the individual conductor lines 2 of a card 1 to be tested. Subsequently, the short and interruption tests can be implemented after the correlation of finger and probe head addresses with the conductor line addresses.
摘要翻译：用于接触多个紧密相邻的导体线2的探针头布置包括至少一个探针头3，其中在半导体技术中多个指状物4与背面5一起制成单片硅。多个这样的探头3被构成以形成测试器。在每个测试开始时，确定哪个手指4将要被放置在被测试的卡1的各个导线2上。随后，可以在手指和探针头地址与导体线地址相关之后实现短路和中断测试。

7. 发明授权

US4554458A Electron beam projection lithography 失效
标题翻译：电子束投影光刻
公开(公告)号：US4554458A
公开(公告)日：1985-11-19
申请号：US632997
申请日：1984-07-20
申请人： Uwe Behringer , Harald Bohlen , Werner Kulcke , Peter Nehmiz
发明人： Uwe Behringer , Harald Bohlen , Werner Kulcke , Peter Nehmiz
IPC分类号： H01L21/027 , G03F7/20 , H01J37/30 , H01J37/317 , H01J40/16
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3175 , H01J2237/06333 , H01J2237/151 , H01J2237/31788
摘要： The photoresist film 12 on the surface of a wafer 11 is exposed through the shadow pattern which is generated by a transmission mask 13 arranged a short distance therefrom when the mask is subjected to a large-area electron beam. The source of the electron beam is an unstructured photocathode 16 on an ultraviolet transparent carrier such as, quartz glass 17 which is subjected to UV radiation from the backside. The electrons exiting from layer 16 are accelerated by a homogeneous electric field 14 towards the mask 13 and shaped to form a homogeneous collimated electron beam. By means of laterally positioned electrostatic deflecting electrodes 19a, 19b, the entire electron beam can be tilted relative to the wafer for adjusting the mask pattern.
摘要翻译：当掩模经受大面积电子束时，晶片11表面上的光致抗蚀剂膜12通过由距离布置短距离的透射掩模13产生的阴影图案而暴露。电子束的来源是在紫外线透明载体上的非结构化光电阴极16，例如从背面经受紫外线辐射的石英玻璃17。从层16出射的电子通过均匀电场14朝着掩模13加速并成形为形成均匀的准直电子束。通过横向定位的静电偏转电极19a，19b，整个电子束可以相对于晶片倾斜以调整掩模图案。

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