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1. 发明授权

US4522893A Contact device for releasably connecting electrical components 失效
标题翻译：用于可释放地连接电气部件的接触装置
公开(公告)号：US4522893A
公开(公告)日：1985-06-11
申请号：US433611
申请日：1982-10-12
申请人： Harald Bohlen , Gerhard Kaus , Johann Greschner , Joachim H. Keyser , Werner Kulcke
发明人： Harald Bohlen , Gerhard Kaus , Johann Greschner , Joachim H. Keyser , Werner Kulcke
IPC分类号： H01R24/00 , H01L23/48 , H01L23/532 , H01R12/18 , H01R13/02 , H01J17/00
CPC分类号： H01L23/53271 , H01L24/72 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01061 , H01L2924/01076 , H01L2924/01082 , H01L2924/12033 , H01L2924/14 , Y10T29/49121 , Y10T428/12674
摘要： Two electrical components 1 and 2 containing electric conductor lines 3 and 4 are interconnected in that one component 2 comprises silicon contact fingers 5 and a back part 6 made of silicon and carrying the fingers 5. Fingers 5 and back part 6 preferably represent an integer component of an integrated circuit provided on a monocrystalline substrate and to be connected to other electrical components. Fingers 5 and back part 6 are preferably made in accordance with micromechanical silicon semiconductor technology.
摘要翻译：包含电导体线3和4的两个电气部件1和2被互连，因为一个部件2包括硅接触指5和由硅制成并携带指状物5的后部6.手指5和后部6优选地表示整数分量设置在单晶衬底上并连接到其它电气部件的集成电路。手指5和背部6优选地根据微机械硅半导体技术制造。

2. 发明授权

US4169230A Method of exposure by means of corpuscular beam shadow printing 失效
标题翻译：通过粒子束阴影印刷曝光的方法
公开(公告)号：US4169230A
公开(公告)日：1979-09-25
申请号：US904069
申请日：1978-05-08
申请人： Harald Bohlen , Johann Greschner , Werner Kulcke , Peter Nehmiz
发明人： Harald Bohlen , Johann Greschner , Werner Kulcke , Peter Nehmiz
IPC分类号： H01L21/027 , G03F1/20 , H01J37/30 , A61K27/02
CPC分类号： G03F1/20 , H01J37/3007
摘要： A method of exposure of a target object by means of corpuscular beam shadow printing through a mask with several complementary zones wherein the beam, shiftable and tiltable about a point in the mask plane and arranged in parallel at a small distance from the target object, is first impinged upon a first of the complementary zones, then the object is shifted under a second of the complementary zones, and the positioning of the beam is changed so that any deviation of the actual position of the second area of the target object to be exposed from its nominal position is determined and compensated for by tilting the beam about a point substantially in the mask plane.
摘要翻译：通过具有多个互补区域的掩模通过粒子束阴影印刷对目标物体进行曝光的方法，其中围绕掩模平面中的点移动并可倾斜并且与目标对象距离小的距离平行设置的光束是首先撞击第一互补区域，然后物体在互补区域的第二个下移动，并且改变梁的定位，使得目标物体的第二区域的实际位置的任何偏离将被暴露通过将光束围绕基本上在掩模平面中的点倾斜来确定和补偿其标称位置。

3. 发明授权

US4370554A Alignment system for particle beam lithography 失效
标题翻译：粒子束光刻对准系统
公开(公告)号：US4370554A
公开(公告)日：1983-01-25
申请号：US183118
申请日：1980-09-02
申请人： Harald Bohlen , Johann Greschner , Werner Kulcke , Peter Nehmiz
发明人： Harald Bohlen , Johann Greschner , Werner Kulcke , Peter Nehmiz
IPC分类号： H01J37/304 , H01L21/68 , G01N23/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01L21/682
摘要： The mutual alignment of mask and substrate patterns of a specific semiconductor structure are attained by use of a plurality of individual marks in a specific geometric position with respect to each other. By the arrangement of openings in the alignment pattern of the mask, the broad electron beam is split into a multitude of individual beams which interact with alignment marks on the substrate. The interaction is used to generate a coincidence signal. The signal to noise ratio of this arrangement is determined by the overall current and is comparable to that of a thin concentrated electron beam. Registration is effected in a small amount of time and the disadvantageous effects of the high current density used in the raster process are not a factor. In a preferred embodiment, the alignment pattern of the mask is a matrix with center spacings of openings increasing upon advance in two directions perpendicular to each other such that no distance can be represented by the sum of smaller distances. Alignment signals are provided by detecting either absorbed or reflected electrons. A plurality of detectors in the mask are used to detect the reflected electrons.
摘要翻译：通过使用相对于彼此的特定几何位置中的多个单独的标记来获得特定半导体结构的掩模和衬底图案的相互对准。通过在掩模的对准图案中布置开口，宽电子束被分成与基板上的对准标记相互作用的多个单独的光束。该交互用于产生符合信号。该布置的信噪比由总电流确定，并且与薄的集中电子束的信噪比相当。注册在少量时间内进行，并且在光栅处理中使用的高电流密度的不利影响不是因素。在优选实施例中，掩模的对准图案是矩阵，其中开口的中心间隔在彼此垂直的两个方向上预先增加，使得距离可以由较小距离的和表示。通过检测吸收或反射的电子来提供对准信号。掩模中的多个检测器用于检测反射的电子。

4. 发明授权

US4334156A Method of shadow printing exposure 失效
标题翻译：阴影印刷曝光方法
公开(公告)号：US4334156A
公开(公告)日：1982-06-08
申请号：US70453
申请日：1979-08-28
申请人： Harald Bohlen , Helmut Engelke , Werner Kulcke , Peter Nehmiz , Johann Greschner
发明人： Harald Bohlen , Helmut Engelke , Werner Kulcke , Peter Nehmiz , Johann Greschner
IPC分类号： H01L21/027 , H01J37/30 , H01J37/304 , H01J37/00
CPC分类号： H01J37/3045 , H01J37/3007
摘要： A method of pattern exposing an energy beam sensitive target surface to a particle beam by proximity printing, wherein mask alignment errors such as lateral deviations, skew and linear distortions are determined and are effectively corrected by scanning the mask area being transferred with a controllably tilted particle beam, the particle beam having a diameter which is small compared to the area of the mask being scanned. At each scan point the particle beam is controllably tilted in the same azimuth direction as the alignment error for that point and by a tilt angle (taken with respect to the normal direction of the target surface) which has a tangent equal to the product of the magnitude of the alignment error and the separation between the mask and target surface at that point.
摘要翻译：通过接近印刷将能量束敏感目标表面图案曝光到粒子束的方法，其中确定了诸如横向偏离，偏斜和线性失真的掩模对准误差，并且通过用可控倾斜的粒子扫描掩模区域来有效地校正光束，粒子束的直径与被扫描的掩模的面积相比较小。在每个扫描点处，粒子束在与该点的对准误差相同的方位角方向上可控地倾斜，并且倾斜角（相对于目标表面的法线方向），该角度等于在该点处的对准误差的大小以及掩模和目标表面之间的间隔。

5. 发明授权

US4267259A Exposure process 失效
标题翻译：曝光过程
公开(公告)号：US4267259A
公开(公告)日：1981-05-12
申请号：US12634
申请日：1979-02-16
申请人： Harald Bohlen , Johann Greschner , Werner Kulcke , Peter Nehmiz
发明人： Harald Bohlen , Johann Greschner , Werner Kulcke , Peter Nehmiz
IPC分类号： G03F7/095 , H01L21/027 , B05D3/06 , G03F7/26
CPC分类号： H01L21/0277 , G03F7/095 , H01L21/0278 , Y10S430/168
摘要： Radiation sensitive layers are x-ray exposed by providing a metal mask pattern on the layer through which the layer is exposed. The metal mask pattern is formed by applying a blanket metal layer to the radiation sensitive layer followed by an electron beam sensitive resist layer which is patterned by an electron beam exposure process. The exposed portions of the metal layer are then etched away to form the metal mask pattern.
摘要翻译：辐射敏感层通过在层暴露的层上提供金属掩模图案而被X射线曝光。金属掩模图案是通过对辐射敏感层施加覆盖金属层而形成的，随后是通过电子束曝光工艺构图的电子束敏感抗蚀剂层。然后将金属层的暴露部分蚀刻掉以形成金属掩模图案。

6. 发明授权

US4513203A Mask and system for mutually aligning objects in ray exposure systems 失效
标题翻译：用于在射线曝光系统中相互对准物体的掩模和系统
公开(公告)号：US4513203A
公开(公告)日：1985-04-23
申请号：US625586
申请日：1984-06-29
申请人： Harald Bohlen , Helmut Engelke , Johann Greschner , Reinhold Muhl , Peter Nehmiz , Hans J. Trumpp
发明人： Harald Bohlen , Helmut Engelke , Johann Greschner , Reinhold Muhl , Peter Nehmiz , Hans J. Trumpp
IPC分类号： G03B27/32 , G03F9/00 , H01J37/304 , H01L21/027 , H01L21/68 , G01N21/00 , G01N23/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F9/00 , G03F9/7053 , H01J37/3045
摘要： For mutually aligning (registering) mask and substrate in X- or corpuscular ray lithography, an electron beam (16) is used which extends collaterally to the exposure beam (ion beam or X-ray) and which is suppressed during the actual exposure process. For coupling the electron beam to the exposure beam path, a magnetic field (7) is used. The accurate relative position of mask and substrate is determined during alignment by tilting the electron beam. Fine alignment during exposure is effected by suitably tilting the ion beam or shifting the substrate relative to the X-ray. The mask (10) used for exposure consists of a very thin silicon layer with a pattern area (M) and a registration area (R) spatially separated therefrom. The registration area consists of a plurality of openings, the pattern area of blind holes.
摘要翻译：为了在X射线或微粒光刻中相互对准（配准）掩模和衬底，使用电子束（16），其横向延伸到曝光光束（离子束或X射线），并且在实际曝光过程中被抑制。为了将电子束耦合到曝光光束路径，使用磁场（7）。通过倾斜电子束在对准期间确定掩模和衬底的精确相对位置。通过适当地倾斜离子束或相对于X射线移动衬底来实现曝光期间的精细对准。用于曝光的掩模（10）由具有图案区域（M）的非常薄的硅层和与其空间分离的对准区域（R）组成。注册区域由多个开口组成，盲孔的图案区域。

7. 发明授权

US4342817A Mask for structuring surface areas, and method of making it 失效
标题翻译：用于构造表面积的面膜及其制作方法
公开(公告)号：US4342817A
公开(公告)日：1982-08-03
申请号：US126602
申请日：1980-03-03
申请人： Harald Bohlen , Helmut Engelke , Johann Greschner , Peter Nehmiz
发明人： Harald Bohlen , Helmut Engelke , Johann Greschner , Peter Nehmiz
IPC分类号： H01L21/027 , G03F1/20 , G03C5/00
CPC分类号： G03F1/20 , Y10S438/924 , Y10T428/12361 , Y10T428/24322
摘要： A mask for structuring surface areas and a method for manufacture thereof. The mask includes at least one metal layer with throughgoing apertures which define the mask pattern and a semiconductor substrate for carrying the metal layer. The semiconductor substrate has throughholes that correspond to the mask pattern. The throughholes in the semiconductor substrate extend from the metal layer-covered surface on the front to at least one tub-shaped recess which extends from the other back surface into the semiconductor substrate. Holes are provided in a surface layer in the semiconductor substrate. The surface layer differs in its doping from the rest of the substrate and the holes which are provided in the surface layer have lateral dimensions larger than the apertures in the metal layer so that the metal layer protrudes over the surface layer.
摘要翻译：用于构造表面积的掩模及其制造方法。掩模包括至少一个具有限定掩模图案的通孔的金属层和用于承载金属层的半导体衬底。半导体衬底具有对应于掩模图案的通孔。半导体衬底中的通孔从前面的金属层覆盖的表面延伸到从另一个背表面延伸到半导体衬底中的至少一个桶形凹部。在半导体衬底的表面层设置孔。表面层的掺杂与衬底的其余部分不同，并且设置在表面层中的孔的横向尺寸大于金属层中的孔，使得金属层突出在表面层上。

8. 发明授权

US4591540A Method of transferring a pattern into a radiation-sensitive layer 失效
标题翻译：将图案转印到辐射敏感层中的方法
公开(公告)号：US4591540A
公开(公告)日：1986-05-27
申请号：US603020
申请日：1984-04-23
申请人： Harald Bohlen , Erwin Bretscher , Helmut Engelke , Peter Nehmiz , Peter Vettiger , Johann Greschner
发明人： Harald Bohlen , Erwin Bretscher , Helmut Engelke , Peter Nehmiz , Peter Vettiger , Johann Greschner
IPC分类号： H01L21/30 , G03F1/20 , G03F1/68 , G03F7/20 , H01L21/027 , G03F9/00 , G03C5/00
CPC分类号： G03F1/20 , G03F1/68 , G03F7/70475
摘要： According to this process two partial patterns which, if superimposed upon each other in a predetermined alignment relative to each other yield the desired pattern, with elements of both partial patterns combining to form elements of the pattern, and these partial pattern elements overlapping sectionally, are projected with a suitable radiation onto the radiation-sensitive layers. Overlapping is achieved in that when designing the two partial patterns a pattern corresponding to the desired pattern is used as a basis in that the elements of this pattern are exposed to a negative windage, the negative windage pattern is subsequently partitioned into two negative windage patterns corresponding to the partial patterns, and finally the negative windage partial pattern elements are exposed to a positive windage to the desired size of the partial pattern elements.The method is used in particular when a pattern is to be transferred by means of hole masks, and if it is necessary, e.g. because the pattern shows annular elements, to use instead of one mask only two complementary masks each comprising at least one part of the pattern.
摘要翻译：根据该处理，如果相互相对于彼此以预定的对准彼此重叠的两个部分图案产生期望的图案，则两个部分图案的元素组合以形成图案的元件，并且这些部分图案元素分别重叠以合适的辐射投射到辐射敏感层上。实现重叠是因为当设计两个部分图案时，将与期望图案相对应的图案用作基础，因为该图案的元件暴露于负风挡，然后将负风挡图案划分为相应的两个负风挡图案对于部分图案，最后，负风挡部分图案元件暴露于部分图案元件的期望尺寸的正向风挡。特别是当通过孔掩模传输图案时，特别是使用该方法。因为图案示出了环形元件，而是使用仅包括两个互补掩模的两个互补掩模，每个掩模包括图案的至少一部分。

9. 发明授权

US4504558A Method of compensating the proximity effect in electron beam projection systems 失效
标题翻译：补偿电子束投影系统中邻近效应的方法
公开(公告)号：US4504558A
公开(公告)日：1985-03-12
申请号：US541741
申请日：1983-10-13
申请人： Harald Bohlen , Helmut Engelke , Johann Greschner , Peter Nehmiz
发明人： Harald Bohlen , Helmut Engelke , Johann Greschner , Peter Nehmiz
IPC分类号： G03F7/20 , H01J37/317 , G03C5/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/20 , H01J37/3174 , H01J2237/31769
摘要： For compensating scattering losses of electrons in photoresists (proximity effect) which influence electron beam lithography by altering the pattern geometry it is suggested to expose selected partial areas of a pattern to an additional irradiation dosage in a second exposure step. For that purpose, a specific mask with corresponding correction openings can be used which is applied with the same, or with a different electron beam intensity. In a particularly advantageous manner the correction of the proximity effect can be achieved when complementary masks are used; the correction openings for the partial areas of the one complementary mask are arranged in the other complementary mask. The proximity effect is then corrected without an additional exposure step. For measuring the proximity effect a photo-optical process is suggested where line patterns with decreasing ridge width in the photoresist are defined through electron beam projection, and where the developing process of the photoresist is discontinued prematurely. The ridge edges which in the presence of the proximity effect are asymmetrical can be easily detected under the microscope.
摘要翻译：为了补偿通过改变图案几何影响电子束光刻的光致抗蚀剂（邻近效应）中的电子的散射损失，建议在第二曝光步骤中将图案的所选部分区域暴露于另外的照射剂量。为此，可以使用具有相应校正开口的特定掩模，其应用相同或具有不同的电子束强度。在特别有利的方式中，当使用互补掩模时可以实现邻近效应的校正; 一个互补掩模的部分区域的校正开口布置在另一个互补掩模中。然后在没有额外的曝光步骤的情况下校正邻近效果。为了测量接近效应，建议在光致抗蚀剂中具有减小的脊宽度的线图案通过电子束投影来限定光致抗蚀剂的显影过程以及光致抗蚀剂的显影过程过早地停止的情况。在接近效应的存在下的脊边缘是不对称的，可以在显微镜下容易地检测。

10. 发明授权

US4448865A Shadow projection mask for ion implantation and ion beam lithography 失效
标题翻译：用于离子注入和离子束光刻的阴影投影掩模
公开(公告)号：US4448865A
公开(公告)日：1984-05-15
申请号：US434074
申请日：1982-10-12
申请人： Harald Bohlen , Johann Greschner , Peter Nehmiz
发明人： Harald Bohlen , Johann Greschner , Peter Nehmiz
IPC分类号： H01L21/027 , G03F1/20 , H01L21/266 , G03F9/00
CPC分类号： G03F1/20 , H01L21/266
摘要： A projection mask comprises a thin P.sup.+ -doped silicon layer with through holes adapted to the mask pattern, a grid supporting this layer having silicon ribs. On at least on its side facing away from the grid, the layer has a layer, which is at least as thick as to prevent the implanting of ions in the silicon layer. At least the mask surface exposed to ion irradiation is electrically and thermally conductive, and mechanically resistant. The coating of the silicon frame of the mask is such that it does not cause any mask deformation caused by temperature and/or through inherent tensions of the coating. Preferred absorbing materials are gold, silver, platinum, tungsten, and tantalum, and mechanically resistant materials are preferably carbon, molybdenum, titanium, tungsten, and tantalum. In operation, the mask with grid is placed onto the substrate to be irradiated, and subsequently blanket-illuminated with an ion beam, or scanned line-by-line until each point on the mask has been covered by the beam path.
摘要翻译：投影掩模包括具有适于掩模图案的通孔的薄P +掺杂硅层，支撑具有硅肋的层的栅格。至少在其背离格栅的一侧上，该层具有至少与防止在硅层中注入离子一样厚的层。至少暴露于离子照射的掩模表面是导电和导热的，并且机械地耐受。掩模的硅框架的涂层使得其不会引起由温度和/或通过涂层的固有张力引起的任何掩模变形。优选的吸收材料是金，银，铂，钨和钽，并且机械抵抗材料优选为碳，钼，钛，钨和钽。在操作中，将具有栅格的掩模放置在要照射的基板上，然后用离子束进行毯式照明，或者逐行扫描，直到掩模上的每个点已被光束路径覆盖。

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