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1. 发明申请

US20070190784A1 DIELECTRIC BARRIER LAYER FOR INCREASING ELECTROMIGRATION LIFETIMES IN COPPER INTERCONNECT STRUCTURES 失效
标题翻译：用于增加铜互连结构中电磁寿命的电介质障碍层
公开(公告)号：US20070190784A1
公开(公告)日：2007-08-16
申请号：US11736402
申请日：2007-04-17
申请人： Hao Cui , Peter Burke , Wilbur Catabay
发明人： Hao Cui , Peter Burke , Wilbur Catabay
IPC分类号： H01L21/44
CPC分类号： H01L21/76832 , H01L21/76825 , H01L21/76826 , H01L21/76834 , H01L21/76883
摘要： Embodiments of the invention include a copper interconnect structure having increased electromigration lifetime. Such structures can include a semiconductor substrate having a copper layer formed thereon. A dielectric barrier stack is formed on the copper layer. The dielectric barrier stack includes a first portion formed adjacent to the copper layer and a second portion formed on the first portion, the first portion having improved adhesion to copper relative to the second portion and both portions are formed having resistance to copper diffusion. The invention also includes several embodiments for constructing such structures. Adhesion of the dielectric barrier stack to copper can be increased by plasma treating or ion implanting selected portions of the dielectric barrier stack with adhesion enhancing materials to increase the concentration of such materials in the stack.
摘要翻译：本发明的实施例包括具有增加的电迁移寿命的铜互连结构。这种结构可以包括其上形成有铜层的半导体衬底。在铜层上形成介电阻挡层叠体。电介质势垒叠层包括邻近铜层形成的第一部分和形成在第一部分上的第二部分，第一部分具有相对于第二部分具有改进的铜的粘合性，并且两个部分形成为具有耐铜扩散性。本发明还包括用于构造这种结构的几个实施例。可以通过等离子体处理或离子注入电介质阻挡层的选定部分与粘合增强材料来增加电介质阻挡层与铜的附着，以增加堆叠中这种材料的浓度。

2. 发明申请

US20050176216A1 Ultra low dielectric constant thin film 审中-公开
公开(公告)号：US20050176216A1
公开(公告)日：2005-08-11
申请号：US11106307
申请日：2005-04-14
申请人： Hao Cui , Peter Burke , Wilbur Catabay
发明人： Hao Cui , Peter Burke , Wilbur Catabay
IPC分类号： C23C16/32 , H01L21/00 , H01L21/314 , H01L21/46 , H01L21/768 , H01L29/15
CPC分类号： H01L21/02167 , C23C16/325 , H01L21/022 , H01L21/02274 , H01L21/3148 , H01L21/76801 , H01L21/76807 , H01L21/76826 , H01L21/76828
摘要： A method for forming a substantially oxygen-free silicon carbide layer on a substrate, where the silicon carbide layer has a dielectric constant of less than about four. The substrate is held at a deposition temperature of between about zero centigrade and about one hundred centigrade, and a gas flow of tetramethylsilane is introduced at a rate of no more than about one thousand scientific cubic centimeters per minute. The deposition pressure is held between about one milli Torr and about one hundred Torr, and a radio frequency plasma discharge is produced with a power of no more than about two kilowatts. The plasma discharge is halted when a desired thickness of the silicon carbide layer has been formed.

3. 发明申请

US20050090036A1 ULTRA LOW DIELECTRIC CONSTANT THIN FILM 失效
标题翻译：超低介电常数薄膜
公开(公告)号：US20050090036A1
公开(公告)日：2005-04-28
申请号：US10691400
申请日：2003-10-22
申请人： Hao Cui , Peter Burke , Wilbur Catabay
发明人： Hao Cui , Peter Burke , Wilbur Catabay
IPC分类号： C23C16/32 , H01L21/00 , H01L21/314 , H01L21/46 , H01L21/768 , H01L29/15
CPC分类号： H01L21/02167 , C23C16/325 , H01L21/022 , H01L21/02274 , H01L21/3148 , H01L21/76801 , H01L21/76807 , H01L21/76826 , H01L21/76828
摘要： A method for forming a substantially oxygen-free silicon carbide layer on a substrate, where the silicon carbide layer has a dielectric constant of less than about four. The substrate is held at a deposition temperature of between about zero centigrade and about one hundred centigrade, and a gas flow of tetramethylsilane is introduced at a rate of no more than about one thousand scientific cubic centimeters per minute. The deposition pressure is held between about one milli Torr and about one hundred Torr, and a radio frequency plasma discharge is produced with a power of no more than about two kilowatts. The plasma discharge is halted when a desired thickness of the silicon carbide layer has been formed.
摘要翻译：在基底上形成基本上无氧的碳化硅层的方法，其中碳化硅层的介电常数小于约4。基板保持在约零摄氏度和约百摄氏度之间的沉积温度，并且以不超过约一千科学立方厘米每分钟的速率引入四甲基硅烷的气流。沉积压力保持在约1毫乇至约100乇之间，并且以不大于约2千瓦的功率产生射频等离子体放电。当形成所需的碳化硅层厚度时，等离子体放电停止。

4. 发明申请

US20060118523A1 Planarization with reduced dishing 有权
标题翻译：平面化减少凹陷
公开(公告)号：US20060118523A1
公开(公告)日：2006-06-08
申请号：US11337460
申请日：2006-01-23
申请人： Wilbur Catabay , Wei-Jen Hsia , Hao Cui
发明人： Wilbur Catabay , Wei-Jen Hsia , Hao Cui
IPC分类号： B44C1/22 , C23F1/00 , C03C15/00
CPC分类号： B23H5/08 , C23F1/02 , C23F4/00 , C25F3/02 , H01L21/02063 , H01L21/32115 , H01L21/3212 , H01L21/32136 , H01L21/7684
摘要： A method of forming a planarized layer on a substrate, where the substrate is cleaned, and the layer is formed having a surface with high portions and low portions. A resistive mask is formed over the low portions of the layer, but not over the high portions of the layer. The surface of the layer is etched, where the high portions of the layer are exposed to the etch, but the low portions of the layer underlying the resistive mask are not exposed to the etch. The etch of the surface of the layer is continued until the high portions of the layer are at substantially the same level as the low portions of the layer, thereby providing an initial planarization of the surface of the layer. The resistive mask is removed from the surface of the layer, and all of the surface of the layer is planarized to provide a planarized layer.
摘要翻译：在衬底上形成平坦化层的方法，其中衬底被清洁，并且形成具有高部分和低部分的表面的层。电阻掩模形成在层的低部分上，但不在层的高部分之上。蚀刻层的表面，其中层的高部分暴露于蚀刻，但是电阻掩模下面的层的低部分不暴露于蚀刻。层的表面的蚀刻继续进行直到层的高部分与层的低部分基本相同的水平，从而提供层的表面的初始平坦化。电阻掩模从层的表面去除，并且层的所有表面被平坦化以提供平坦化层。

5. 发明申请

US20070163993A1 Planarization with reduced dishing 审中-公开
公开(公告)号：US20070163993A1
公开(公告)日：2007-07-19
申请号：US11695169
申请日：2007-04-02
申请人： Wilbur Catabay , Wei-Jen Hsia , Hao Cui
发明人： Wilbur Catabay , Wei-Jen Hsia , Hao Cui
IPC分类号： C23F1/00 , B44C1/22 , C03C15/00
CPC分类号： B23H5/08 , C23F1/02 , C23F4/00 , C25F3/02 , H01L21/02063 , H01L21/32115 , H01L21/3212 , H01L21/32136 , H01L21/7684
摘要： A method of forming a planarized layer on a substrate, where the substrate is cleaned, and the layer is formed having a surface with high portions and low portions. A resistive mask is formed over the low portions of the layer, but not over the high portions of the layer. The surface of the layer is etched, where the high portions of the layer are exposed to the etch, but the low portions of the layer underlying the resistive mask are not exposed to the etch. The etch of the surface of the layer is continued until the high portions of the layer are at substantially the same level as the low portions of the layer, thereby providing an initial planarization of the surface of the layer. The resistive mask is removed from the surface of the layer, and all of the surface of the layer is planarized to provide a planarized layer.

6. 发明申请

US20100200993A1 DIELECTRIC BARRIER LAYER FOR INCREASING ELECTROMIGRATION LIFETIMES IN COPPER INTERCONNECT STRUCTURES 有权
标题翻译：用于增加铜互连结构中电磁寿命的电介质障碍层
公开(公告)号：US20100200993A1
公开(公告)日：2010-08-12
申请号：US12764004
申请日：2010-04-20
申请人： Hao Cui , Peter A. Burke , Wilbur G. Catabay
发明人： Hao Cui , Peter A. Burke , Wilbur G. Catabay
IPC分类号： H01L23/532 , H01L21/31
CPC分类号： H01L21/76832 , H01L21/76825 , H01L21/76826 , H01L21/76834 , H01L21/76883
摘要： Embodiments of the invention include a copper interconnect structure having increased electromigration lifetime. Such structures can include a semiconductor substrate having a copper layer formed thereon. A dielectric barrier stack is formed on the copper layer. The dielectric barrier stack includes a first portion formed adjacent to the copper layer and a second portion formed on the first portion, the first portion having improved adhesion to copper relative to the second portion and both portions are formed having resistance to copper diffusion. The invention also includes several embodiments for constructing such structures. Adhesion of the dielectric barrier stack to copper can be increased by plasma treating or ion implanting selected portions of the dielectric barrier stack with adhesion enhancing materials to increase the concentration of such materials in the stack.
摘要翻译：本发明的实施例包括具有增加的电迁移寿命的铜互连结构。这种结构可以包括其上形成有铜层的半导体衬底。在铜层上形成介电阻挡层叠体。电介质势垒叠层包括邻近铜层形成的第一部分和形成在第一部分上的第二部分，第一部分具有相对于第二部分具有改善的对铜的粘合性，并且两个部分形成为具有耐铜扩散性。本发明还包括用于构造这种结构的几个实施例。可以通过等离子体处理或离子注入电介质阻挡层的选定部分与粘合增强材料来增加电介质阻挡层与铜的附着，以增加堆叠中这种材料的浓度。

7. 发明申请

US20100004268A1 Optically Pure Dihydropyrimidine Compounds and Their Uses for the Preparation of a Medicament for Treatment and Prevention of Viral Diseases 有权
标题翻译：光学纯二氢嘧啶化合物及其用于制备治疗和预防病毒性疾病药物的用途
公开(公告)号：US20100004268A1
公开(公告)日：2010-01-07
申请号：US12373101
申请日：2007-07-09
申请人： Song Li , Guangqiang Xia , Guoming Zhao , Lili Wang , Zhibing Zheng , Yunde Xie , Wu Zhong , Junhai Xiao , Xingzhou Li , Hao Cui
发明人： Song Li , Guangqiang Xia , Guoming Zhao , Lili Wang , Zhibing Zheng , Yunde Xie , Wu Zhong , Junhai Xiao , Xingzhou Li , Hao Cui
IPC分类号： A61K31/505 , C07D417/04 , C07D239/20 , A61K31/506
CPC分类号： C07D417/04 , C07D239/20 , C07D239/28
摘要： The present invention relates to an optically pure compound of formula (I) or a pharmaceutically acceptable salt or hydrate thereof, a process for preparing the optically pure compound of formula (I), and use of the optically pure compound of formula (I) or a pharmaceutically acceptable salt or hydrate thereof as a medicament, in particular as a medicament for the treatment and prevention of type B hepatitis.
摘要翻译：本发明涉及光学纯的式（I）化合物或其药学上可接受的盐或水合物，制备光学纯的式（I）化合物的方法，以及使用光学纯的式（I）化合物或其药学上可接受的盐或水合物作为药物，特别是作为治疗和预防B型肝炎的药物。

8. 发明申请

US20070259883A1 Substitued A-Piperazingly Phenylpropionic Acid Derivatives As Hppar Alpha And/Or Hppar Gamma Agonists 有权
标题翻译：取代的A-Piperazingly苯丙酸衍生物作为Hppar Alpha和/或Hppar伽玛激动剂
公开(公告)号：US20070259883A1
公开(公告)日：2007-11-08
申请号：US11569575
申请日：2005-02-02
申请人： Song Li , Xinbo Zhou , Lili Wang , Cheng Xu , Chengmai Ruan , Cuifang Lin , Junhai Xiao , Zhibing Zheng , Hongying Liu , Yunde Xie , Wu Zhong , Hao Cui
发明人： Song Li , Xinbo Zhou , Lili Wang , Cheng Xu , Chengmai Ruan , Cuifang Lin , Junhai Xiao , Zhibing Zheng , Hongying Liu , Yunde Xie , Wu Zhong , Hao Cui
IPC分类号： A61K31/497 , C07D263/30 , C07D413/02
CPC分类号： C07D263/32
摘要： The present invention relates to a compound of formula I, racemates, optically active isomers, or pharmaceutically acceptable salts or solvates thereof, and a pharmaceutical composition comprising the compound, the various radicals in the formula I are the same as defined in the claims. The present invention also relates to a process for preparing the compound of formula I and use of said compound in the preparation of a medicament for the treatment of hyperglycemia, dyslipidemia, type II diabetes mellitus including associated diabetic dyslipidemia
摘要翻译：本发明涉及式I化合物，外消旋体，旋光异构体或其药学上可接受的盐或溶剂合物，以及包含该化合物的药物组合物，式I中的各种基团与权利要求中所定义相同。本发明还涉及制备式I化合物的方法，以及所述化合物在制备用于治疗高血糖，血脂异常，II型糖尿病的药物中的用途，所述II型糖尿病包括相关的糖尿病性血脂异常

9. 发明授权

US06998343B1 Method for creating barrier layers for copper diffusion 失效
标题翻译：用于产生铜扩散的阻挡层的方法
公开(公告)号：US06998343B1
公开(公告)日：2006-02-14
申请号：US10721971
申请日：2003-11-24
申请人： Grace Sun , Vladimir Zubkov , William K. Barth , Sethuraman Lakshminarayanan , Sey-Shing Sun , Agajan Suvkhanov , Hao Cui
发明人： Grace Sun , Vladimir Zubkov , William K. Barth , Sethuraman Lakshminarayanan , Sey-Shing Sun , Agajan Suvkhanov , Hao Cui
IPC分类号： H01L21/44
CPC分类号： H01L21/76867 , H01L21/76807 , H01L21/76814 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76831 , H01L21/76834 , H01L21/76835 , H01L21/76841
摘要： A method for forming damascene interconnect copper diffusion barrier layers includes implanting calcium into the sidewalls of the trenches and vias. The calcium implantation into dielectric layers, such as oxides, is used to prevent Cu diffusion into oxide, such as during an annealing process step. The improved barrier layers of the present invention help prevent delamination of the Cu from the dielectric.
摘要翻译：用于形成镶嵌互连铜扩散阻挡层的方法包括将钙植入沟槽和通孔的侧壁中。诸如氧化物之类的介电层中的钙注入用于防止Cu扩散到氧化物中，例如在退火工艺步骤期间。本发明的改进的阻挡层有助于防止Cu从电介质分层。

10. 发明授权

US08971433B2 Compressive wireless modulation 有权
标题翻译：压缩无线调制
公开(公告)号：US08971433B2
公开(公告)日：2015-03-03
申请号：US12945741
申请日：2010-11-12
申请人： Chong Luo , Kun Tan , Feng Wu , Hao Cui , Chang Wen Chen
发明人： Chong Luo , Kun Tan , Feng Wu , Hao Cui , Chang Wen Chen
IPC分类号： H04L5/12 , H04L27/34 , H04L1/00 , H04L1/18
CPC分类号： H04L27/3416 , H04L1/005 , H04L1/1812
摘要： A projection code is applied to encode symbols as weighted arithmetic sums of approximately random subsets of binary source bits. Pairs of the symbols are combined to form constellation points, which are sequentially mapped through a constellation to modulate a data signal.
摘要翻译：应用投影码将符号编码为二进制源比特的近似随机子集的加权算术和。这些符号的组合被组合以形成星座点，其通过星座顺序映射以调制数据信号。

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