会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • DIELECTRIC BARRIER LAYER FOR INCREASING ELECTROMIGRATION LIFETIMES IN COPPER INTERCONNECT STRUCTURES
    • 用于增加铜互连结构中电磁寿命的电介质障碍层
    • US20070190784A1
    • 2007-08-16
    • US11736402
    • 2007-04-17
    • Hao CuiPeter BurkeWilbur Catabay
    • Hao CuiPeter BurkeWilbur Catabay
    • H01L21/44
    • H01L21/76832H01L21/76825H01L21/76826H01L21/76834H01L21/76883
    • Embodiments of the invention include a copper interconnect structure having increased electromigration lifetime. Such structures can include a semiconductor substrate having a copper layer formed thereon. A dielectric barrier stack is formed on the copper layer. The dielectric barrier stack includes a first portion formed adjacent to the copper layer and a second portion formed on the first portion, the first portion having improved adhesion to copper relative to the second portion and both portions are formed having resistance to copper diffusion. The invention also includes several embodiments for constructing such structures. Adhesion of the dielectric barrier stack to copper can be increased by plasma treating or ion implanting selected portions of the dielectric barrier stack with adhesion enhancing materials to increase the concentration of such materials in the stack.
    • 本发明的实施例包括具有增加的电迁移寿命的铜互连结构。 这种结构可以包括其上形成有铜层的半导体衬底。 在铜层上形成介电阻挡层叠体。 电介质势垒叠层包括邻近铜层形成的第一部分和形成在第一部分上的第二部分,第一部分具有相对于第二部分具有改进的铜的粘合性,并且两个部分形成为具有耐铜扩散性。 本发明还包括用于构造这种结构的几个实施例。 可以通过等离子体处理或离子注入电介质阻挡层的选定部分与粘合增强材料来增加电介质阻挡层与铜的附着,以增加堆叠中这种材料的浓度。
    • 6. 发明申请
    • DIELECTRIC BARRIER LAYER FOR INCREASING ELECTROMIGRATION LIFETIMES IN COPPER INTERCONNECT STRUCTURES
    • 用于增加铜互连结构中电磁寿命的电介质障碍层
    • US20100200993A1
    • 2010-08-12
    • US12764004
    • 2010-04-20
    • Hao CuiPeter A. BurkeWilbur G. Catabay
    • Hao CuiPeter A. BurkeWilbur G. Catabay
    • H01L23/532H01L21/31
    • H01L21/76832H01L21/76825H01L21/76826H01L21/76834H01L21/76883
    • Embodiments of the invention include a copper interconnect structure having increased electromigration lifetime. Such structures can include a semiconductor substrate having a copper layer formed thereon. A dielectric barrier stack is formed on the copper layer. The dielectric barrier stack includes a first portion formed adjacent to the copper layer and a second portion formed on the first portion, the first portion having improved adhesion to copper relative to the second portion and both portions are formed having resistance to copper diffusion. The invention also includes several embodiments for constructing such structures. Adhesion of the dielectric barrier stack to copper can be increased by plasma treating or ion implanting selected portions of the dielectric barrier stack with adhesion enhancing materials to increase the concentration of such materials in the stack.
    • 本发明的实施例包括具有增加的电迁移寿命的铜互连结构。 这种结构可以包括其上形成有铜层的半导体衬底。 在铜层上形成介电阻挡层叠体。 电介质势垒叠层包括邻近铜层形成的第一部分和形成在第一部分上的第二部分,第一部分具有相对于第二部分具有改善的对铜的粘合性,并且两个部分形成为具有耐铜扩散性。 本发明还包括用于构造这种结构的几个实施例。 可以通过等离子体处理或离子注入电介质阻挡层的选定部分与粘合增强材料来增加电介质阻挡层与铜的附着,以增加堆叠中这种材料的浓度。