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1. 发明授权

US07410828B2 Method of creating a predefined internal pressure within a cavity of a semiconductor device 有权
标题翻译：在半导体器件的空腔内产生预定的内部压力的方法
公开(公告)号：US07410828B2
公开(公告)日：2008-08-12
申请号：US11777162
申请日：2007-07-12
申请人： Hans Joachim Quenzer , Peter Merz , Marten Oldsen , Wolfgang Reinert
发明人： Hans Joachim Quenzer , Peter Merz , Marten Oldsen , Wolfgang Reinert
IPC分类号： H01L21/50 , H01L21/30
CPC分类号： B81B7/0077 , B81C2203/019
摘要： A method of creating a predefined internal pressure within a cavity of a semiconductor device, the method including providing the semiconductor device, the semiconductor device including a semiconductor oxide area which is continuously arranged between the cavity of the semiconductor device and an external surface of the semiconductor device, exposing the semiconductor device to an ambient atmosphere with a noble gas at a first temperature for a predetermined time period, and setting a second temperature, which is different from the first, after the predetermined time period has expired, the semiconductor oxide area exhibiting a higher permeability for the noble gas at the first temperature than at the second temperature.
摘要翻译：一种在半导体器件的空腔内产生预定的内部压力的方法，所述方法包括提供所述半导体器件，所述半导体器件包括半导体氧化物区域，所述半导体氧化物区域连续地布置在所述半导体器件的空腔和所述半导体器件的外表面之间将第一温度下的惰性气体的半导体器件暴露于周围环境预定时间段，并且在预定时间段到期之后设定与第一温度不同的第二温度，显示出半导体氧化物区域在第一温度下对于惰性气体的渗透性高于第二温度。

2. 发明授权

US08039950B2 Solder material lining a cover wafer attached to wafer substrate 有权
标题翻译：焊接材料衬在附着于晶片衬底的盖子晶片上
公开(公告)号：US08039950B2
公开(公告)日：2011-10-18
申请号：US12092892
申请日：2006-11-08
申请人： Marten Oldsen , Wolfgang Reinert , Peter Merz
发明人： Marten Oldsen , Wolfgang Reinert , Peter Merz
IPC分类号： H01L23/48 , H01L21/30
CPC分类号： B81C1/00269 , Y10T428/23
摘要： The invention relates to a cover wafer with a core and with an inside, whereby the inside has one or more annular outer areas, (an) annular area(s), which inwardly adjoin(s) the outer area(s), and has (a) inner area(s), and to a component cover with only one annular outer area on its inside. The invention is characterized in that at least area(s) has/have a buffer layer, which has a wetting angle of 265° C. to 450° C. The invention also relates to a component cover having one of the areas which has said buffer layer in a comparable manner. The invention additionally relates to a wafer component or to a component, which can be inserted using microsystem technology and which has a cover wafer or component cover applied with the aid of a solder material, and to a method for the production thereof.
摘要翻译：本发明涉及一种具有芯部并具有内部的覆盖晶片，由此内部具有一个或多个环形外部区域（一个）环形区域，该环形区域向内邻接外部区域，并具有（a）内部区域和内部仅具有一个环形外部区域的部件盖。本发明的特征在于，至少一个或多个区域具有缓冲层，其对于在> 265℃至450℃范围内熔化的金属共晶溶液具有<35°的润湿角度。本发明还涉及具有可比较的方式具有所述缓冲层的区域之一的部件盖。本发明还涉及可以使用微系统技术插入的晶片组件或组件，并且其具有借助于焊料材料应用的覆盖晶片或组件盖以及其制造方法。

3. 发明授权

US08546928B2 Micromechanical housing comprising at least two cavities having different internal pressure and/or different gas compositions and method for the production thereof 有权
标题翻译：微机械壳体包括具有不同内部压力和/或不同气体组成的至少两个空腔及其制造方法
公开(公告)号：US08546928B2
公开(公告)日：2013-10-01
申请号：US12296189
申请日：2007-04-04
申请人： Peter Merz , Wolfgang Reinert , Marten Oldsen , Oliver Schwarzelbach
发明人： Peter Merz , Wolfgang Reinert , Marten Oldsen , Oliver Schwarzelbach
IPC分类号： H01L23/20 , H01L27/14
CPC分类号： B81B7/0038 , B81B7/02 , B81C1/00285
摘要： The present application relates to a multiple component which is to be subsequently individualized by forming components containing active structures, in addition to a corresponding component which can be used in microsystem technology systems. The multiple component and/or component comprises a flat substrate and also a flat cap structure which are bound to each other such that they surround at least one first and one second cavity per component, which are sealed against each other and towards the outside. The first of the two cavities is provided with getter material and due to the getter material has a different internal pressure and/or a different gas composition than the second cavity. The present application also relates to a method for producing the type of component and/or components for which gas mixtures of various types of gas have a different absorption ratio in relation to the getter material.
摘要翻译：本申请涉及除了可用于微系统技术系统的相应组件之外，通过形成包含活性结构的组分，随后将其个性化的多组分。多个部件和/或部件包括平坦的基板以及平的盖结构，它们彼此结合，使得它们围绕彼此密封并朝向外侧的每个部件的至少一个第一和第二腔。两个空腔中的第一个具有吸气材料，并且由于吸气材料具有与第二腔体不同的内部压力和/或不同的气体组成。本申请还涉及一种用于生产各种类型气体的气体混合物相对于吸气剂材料具有不同吸收比的组分和/或组分的类型的方法。

4. 发明申请

US20100025845A1 MICROMECHANICAL HOUSING COMPRISING AT LEAST TWO CAVITIES HAVING DIFFERENT INTERNAL PRESSURE AND/OR DIFFERENT GAS COMPOSITIONS AND METHOD FOR THE PRODUCTION THEREOF 有权
标题翻译：包含具有不同内部压力和/或不同气体组成的至少两个腔室的微生物壳体及其生产方法
公开(公告)号：US20100025845A1
公开(公告)日：2010-02-04
申请号：US12296189
申请日：2007-04-04
申请人： Peter Merz , Wolfgang Reinert , Marten Oldsen , Oliver Schwarzelbach
发明人： Peter Merz , Wolfgang Reinert , Marten Oldsen , Oliver Schwarzelbach
IPC分类号： H01L23/02 , H01L21/54
CPC分类号： B81B7/0038 , B81B7/02 , B81C1/00285
摘要： The present application relates to a multiple component which is to be subsequently individualized by forming components containing active structures, in addition to a corresponding component which can be used in microsystem technology systems. The multiple component and/or component comprises a flat substrate and also a flat cap structure which are bound to each other such that they surround at least one first and one second cavity per component, which are sealed against each other and towards the outside. The first of the two cavities is provided with getter material and due to the getter material has a different internal pressure and/or a different gas composition than the second cavity. The present application also relates to a method for producing the type of component and/or components for which gas mixtures of various types of gas have a different absorption ratio in relation to the getter material.
摘要翻译：本申请涉及除了可用于微系统技术系统的相应组件之外，通过形成包含活性结构的组分，随后将其个性化的多组分。多个部件和/或部件包括平坦的基板以及平的盖结构，它们彼此结合，使得它们围绕每个部件至少一个第一和一个第二腔，它们被彼此密封并朝向外部。两个空腔中的第一个具有吸气材料，并且由于吸气材料具有与第二腔体不同的内部压力和/或不同的气体组成。本申请还涉及一种用于生产各种类型气体的气体混合物相对于吸气剂材料具有不同吸收比的组分和/或组分的类型的方法。

5. 发明申请

US20080317995A1 Cover Wafer or Component Cover, Wafer Part, or Component That Can Be Inserted Using Microsystems Technology, and Soldering Method for Connecting Corresponding Wafer or Component Parts 有权
标题翻译：可以使用微系统技术插入的盖板或组件盖，晶圆部件或组件，以及连接相应的晶片或组件部件的焊接方法
公开(公告)号：US20080317995A1
公开(公告)日：2008-12-25
申请号：US12092892
申请日：2006-11-08
申请人： Marten Oldsen , Wolfgang Reinert , Peter Merz
发明人： Marten Oldsen , Wolfgang Reinert , Peter Merz
IPC分类号： B32B1/00 , B23K31/02
CPC分类号： B81C1/00269 , Y10T428/23
摘要： The invention relates to a cover wafer with a core (1) and with an inside (7, 10, 11), whereby the inside has one or more annular outer areas (7), (an) annular area(s) (10), which inwardly adjoin(s) the outer area(s), and has (a) inner area(s) (11), and to a component cover with only one annular outer area on its inside. The invention is characterized in that at least area(s) (10) has/have a buffer layer, which has a wetting angle of 265° C. to 450° C. The invention also relates to a component cover having one of the areas (7), (10) and (11), which has said buffer layer in a comparable manner. The invention additionally relates to a wafer component or to a component, which can be inserted using microsystem technology and which has a cover wafer or component cover applied with the aid of the solder material, and to a method for the production thereof.
摘要翻译：本发明涉及一种具有芯体（1）并具有内部（7,10,11）的覆盖晶片，由此内部具有一个或多个环形外部区域（7），（a）环形区域（10），其内部邻接外部区域，并且具有（a）内部区域（11）以及在其内部仅具有一个环形外部区域的部件盖。本发明的特征在于，至少一个或多个区域（10）具有缓冲层，对于在> 265℃至450℃范围内熔化的金属共晶溶液具有<35°的润湿角度本发明还涉及具有区域（7），（10）和（11）中的一个的组件盖，其具有可比较的方式的所述缓冲层。本发明还涉及可以使用微系统技术插入的晶片组件或组件，并且其具有借助于焊料材料应用的覆盖晶片或组件盖，以及其制造方法。

6. 发明授权

US07286294B2 Beam-shaping element for optical radiation and a method for producing said element 有权
标题翻译：用于光辐射的光束成形元件和用于制造所述元件的方法
公开(公告)号：US07286294B2
公开(公告)日：2007-10-23
申请号：US10484214
申请日：2002-07-17
申请人： Hans-Joachim Quenzer , Wolfgang Reinert
发明人： Hans-Joachim Quenzer , Wolfgang Reinert
IPC分类号： G02B1/10 , F21V9/04
CPC分类号： G02B27/0927 , A61F9/00814 , G02B27/09 , G02B27/0938
摘要： A beam-shaping element comprises a carrier substrate (1) bearing a thin-layer metallization which is structured for shaping the beam of optical radiation. The thin-layer metallization includes at least two metallic layers (2, 3), which, upon impingement of the optical radiation (4), react with each other accompanied by a permanent change in color in response to a certain intensity and/or an irradiation period of the optical radiation (4).
摘要翻译：光束成形元件包括承载基板（1），该载体基板（1）承载用于使光辐射束成形的薄层金属化。薄层金属化包括至少两个金属层（2,3），其在光辐射（4）的撞击时响应于一定的强度而伴随着颜色的永久变化而相互反应和/或照射周期的光辐射（4）。

7. 发明授权

US07739900B2 Method for testing the leakage rate of vacuum encapsulated devices 失效
标题翻译：用于测试真空封装装置的泄漏率的方法
公开(公告)号：US07739900B2
公开(公告)日：2010-06-22
申请号：US11792074
申请日：2005-11-10
申请人： Wolfgang Reinert , Dirk Kaehler , Peter Merz
发明人： Wolfgang Reinert , Dirk Kaehler , Peter Merz
IPC分类号： G01M3/02
CPC分类号： G01M3/329 , G01M3/186 , G01M3/226
摘要： The present invention is directed to a method for testing the leakage rate of an encapsulated device comprising the step: bombing the device with a neon and/or argon atmosphere using a bombing pressure of at least more than environmental pressure and measuring the quality factor before and after bombing. Preferably, the bombing time is about 10 to 100 hours, and the bombing pressure is 1.5 to 100 bar, more preferably 1.5 to 5 bar and most preferably about 4 bar. With this test, the leakage rate of fine leaks of the device may be determined.
摘要翻译：本发明涉及一种用于测试封装装置的泄漏率的方法，包括以下步骤：使用至少大于环境压力的轰炸压力，用氖气和/或氩气气氛轰炸该装置，并测量先前的质量因子轰炸后优选地，轰炸时间为约10至100小时，轰炸压力为1.5至100巴，更优选为1.5至5巴，最优选为约4巴。通过该测试，可以确定装置的微小泄漏的泄漏率。

8. 发明申请

US20080141759A1 Method for Testing the Leakage Rate of Vacuum Capsulated Devices 失效
标题翻译：真空包装设备泄漏率测试方法
公开(公告)号：US20080141759A1
公开(公告)日：2008-06-19
申请号：US11792074
申请日：2005-11-10
申请人： Wolfgang Reinert , Dirk Kaehler , Peter Merz
发明人： Wolfgang Reinert , Dirk Kaehler , Peter Merz
IPC分类号： G01M3/02
CPC分类号： G01M3/329 , G01M3/186 , G01M3/226
摘要： The present invention is directed to a method for testing the leakage rate of an encapsulated device comprising the step: bombing the device with a Neon and/or Argon atmosphere using a bombing pressure of at least more than environmental pressure and measuring the quality factor before and after bombing. Preferably, the bombing time is about 10 to 100 hours, and the bombing pressure is 1.5 to 100 bar, more preferably 1.5 to 5 bar and most preferably about 4 bar. With this test, the leakage rate of fine leaks of the device may be determined. This test is helpful in determining statistical surface contaminations or defects caused by wafer processing that affect the seal integrity just enough to cause shorter lifetimes. Further, dicing, die assembly and transfer molding may also introduce physical defects which may be detected with the present method. Finally, the inventive test method may be useful for process optimization: Hermeticity tests are a great help to optimize sealing processes.
摘要翻译：本发明涉及一种用于测试包封装置的泄漏率的方法，包括以下步骤：使用至少大于环境压力的轰炸压力，用氖气和/或氩气气氛轰炸该装置，并测量先前的质量因子，轰炸后优选地，轰炸时间为约10至100小时，轰炸压力为1.5至100巴，更优选为1.5至5巴，最优选为约4巴。通过该测试，可以确定装置的微小泄漏的泄漏率。该测试有助于确定影响密封完整性的晶片处理造成的统计表面污染或缺陷，足以导致更短的寿命。此外，切割，模具组装和传递模塑也可能引入可用本方法检测的物理缺陷。最后，本发明的测试方法可能对于工艺优化是有用的：密封性测试对于优化密封过程是非常有帮助的。

9. 发明申请

US20070259470A1 Method of Creating a Predefined Internal Pressure Within a Cavity of a Semiconductor Device 有权
标题翻译：在半导体器件的腔内创建预定内部压力的方法
公开(公告)号：US20070259470A1
公开(公告)日：2007-11-08
申请号：US11777162
申请日：2007-07-12
申请人： Hans Quenzer , Peter Merz , Marteu Oldsen , Wolfgang Reinert
发明人： Hans Quenzer , Peter Merz , Marteu Oldsen , Wolfgang Reinert
IPC分类号： H01L21/00
CPC分类号： B81B7/0077 , B81C2203/019
摘要： A method of creating a predefined internal pressure within a cavity of a semiconductor device, the method including providing the semiconductor device, the semiconductor device including a semiconductor oxide area which is continuously arranged between the cavity of the semiconductor device and an external surface of the semiconductor device, exposing the semiconductor device to an ambient atmosphere with a noble gas at a first temperature for a predetermined time period, and setting a second temperature, which is different from the first, after the predetermined time period has expired, the semiconductor oxide area exhibiting a higher permeability for the noble gas at the first temperature than at the second temperature.
摘要翻译：一种在半导体器件的空腔内产生预定的内部压力的方法，所述方法包括提供所述半导体器件，所述半导体器件包括半导体氧化物区域，所述半导体氧化物区域连续地布置在所述半导体器件的空腔和所述半导体器件的外表面之间将第一温度下的惰性气体的半导体器件暴露于周围环境预定时间段，并且在预定时间段到期之后设定与第一温度不同的第二温度，显示出半导体氧化物区域在第一温度下对于惰性气体的渗透性高于第二温度。

10. 发明授权

US10002896B2 Housing for an infrared radiation micro device and method for fabricating such housing 有权
公开(公告)号：US10002896B2
公开(公告)日：2018-06-19
申请号：US13379263
申请日：2010-06-21
申请人： Wolfgang Reinert , Jochen Quenzer , Sebastien Tinnes , Cécile Roman
发明人： Wolfgang Reinert , Jochen Quenzer , Sebastien Tinnes , Cécile Roman
IPC分类号： H05K5/00 , C25D5/02 , H05K13/00 , H01L27/146 , G01J5/04 , G01J5/08
CPC分类号： H01L27/14618 , G01J5/045 , G01J5/0875 , H01L27/14649 , H01L27/14683 , H01L2224/16 , H01L2924/01019 , H01L2924/01057 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/01327 , H01L2924/10157 , H01L2924/10158 , H01L2924/1461 , H01L2924/00
摘要： Infrared radiation micro device, cover for such a device and method for its fabrication, the device comprising a substrate and a cover and an infrared radiation detecting, emitting or reflecting infrared micro unit, the infrared micro unit being arranged in a cavity defined between the substrate and the cover, the cover comprising an antireflective surface texture to enhance the transmissibility of infrared radiation, wherein a distance frame formed in an additive process on the substrate side of the cover and/or the cover side of the substrate is arranged between substrate and cover.

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