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1. 发明授权

US06506621B1 Method for producing a diaphragm sensor array and diaphragm sensor array 失效
标题翻译：隔膜传感器阵列和隔膜传感器阵列的制造方法
公开(公告)号：US06506621B1
公开(公告)日：2003-01-14
申请号：US10016026
申请日：2001-12-12
申请人： Hans Artmann , Thorsten Pannek , Robert Siegel
发明人： Hans Artmann , Thorsten Pannek , Robert Siegel
IPC分类号： H01L2100
CPC分类号： G01J5/06 , B81B3/0081 , B81B2203/0127 , B81B2203/0315 , B81C2201/0115 , B81C2201/0136 , G01J5/10
摘要： In a method for producing a diaphragm sensor array having a semiconductor material substrate on which a plurality of planar diaphragm regions is arranged as a carrier layer for sensor elements, the planar diaphragm regions are thermally decoupled from one another by crosspieces made of a material having clearly better heat conductive properties compared to the diaphragm regions and the lateral surroundings of the crosspieces. Masking for a subsequent step for producing porous semiconductor material is applied at the locations of the semiconductor material substrate at which the crosspieces for the thermal decoupling are formed, and the semiconductor regions not protected by the masking are rendered porous and the diaphragm regions are produced thereupon. Instead of using porous silicon, a plasma etching process may be performed from the backside of a semiconductor material substrate. In particular, high integration densities of diaphragm sensors may be achieved with both methods. A diaphragm sensor array is produced by one of the methods.
摘要翻译：在具有半导体材料基板的膜片传感器阵列的制造方法中，多个平面膜片区域被布置为传感器元件的载体层，平面隔膜区域通过由具有清楚的材料制成的横条而彼此热分离与隔膜区域和横梁的横向周围相比，具有更好的导热性能。在用于制造多孔半导体材料的后续步骤中的掩模被应用于半导体材料基板的用于形成用于热解耦的接头的位置处，并且未被掩蔽保护的半导体区域变得多孔，并且在其上产生隔膜区域。代替使用多孔硅，可以从半导体材料基板的背面进行等离子体蚀刻工艺。特别地，可以通过两种方法实现膜片传感器的高集成度。通过这些方法之一产生膜片传感器阵列。

2. 发明授权

US07679154B2 Method for manufacturing a semiconductor component and a semiconductor component, in particular a diaphragm sensor 有权
标题翻译：用于制造半导体部件和半导体部件的方法，特别是膜片传感器
公开(公告)号：US07679154B2
公开(公告)日：2010-03-16
申请号：US12001289
申请日：2007-12-10
申请人： Hubert Benzel , Heribert Weber , Hans Artmann , Thorsten Pannek , Frank Schäfer
发明人： Hubert Benzel , Heribert Weber , Hans Artmann , Thorsten Pannek , Frank Schäfer
IPC分类号： H01L29/84
CPC分类号： B81C1/00182 , B81B2203/0127 , B81B2203/0315 , B81C2201/0115 , B81C2201/0136 , G01L9/0042
摘要： In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.
摘要翻译：在制造具有半导体衬底的半导体部件的方法中，制造平坦的多孔隔膜层和多孔隔膜层下方的空腔，以形成用于部件的无支撑结构。在第一种方法中，半导体衬底可以在膜片区域中接收不同于空腔的掺杂。这允许产生不同的孔径和/或孔隙率，其用于制造用于改善蚀刻气体输送的空腔。此外，可以在隔膜区域中产生介孔，并且可以在将要成为空腔区域的地方制造纳米孔作为辅助结构。

3. 发明授权

US07709933B2 Structural element having a porous region at least regionally provided with a cover layer and its use as well as method for setting the thermal conductivity of a porous region 失效
标题翻译：具有至少区域地设置有覆盖层的多孔区域的结构元件及其用途以及用于设定多孔区域的热导率的方法
公开(公告)号：US07709933B2
公开(公告)日：2010-05-04
申请号：US10742055
申请日：2003-12-18
申请人： Hans Artmann , Thorsten Pannek , Hans-Peter Trah , Franz Laermer
发明人： Hans Artmann , Thorsten Pannek , Hans-Peter Trah , Franz Laermer
IPC分类号： H01L31/036
CPC分类号： C04B38/007 , B81C1/00492 , B81C2201/0115 , C04B2111/28 , C04B35/14
摘要： A structural element having a region of porous silicon or porous silicon oxide, which was obtained from a porization, starting from an edge area of the region, in at least largely crystalline silicon. Relative to the edge area, the crystalline silicon has a crystal orientation that has an orientation that differs from a orientation or from an orientation that is equivalent for reasons of symmetry. This structural element is suited for use in a mass-flow sensor, in a component for the thermal decoupling of sensor and/or actuator structures, or a gas sensor. Furthermore, methods for setting the thermal conductivity of a region of porous silicon or porous silicon oxide of a structural element are described. In particular, in a porization of crystalline silicon, starting from an edge area of the region, the crystalline orientation of the silicon relative to the edge area is selected such that a thermal conductivity comes about along a direction perpendicular to the edge area that differs from, in particular is lower than, the thermal conductivity, that comes about in this direction in an otherwise analogous porization of crystalline silicon having a orientation or an equivalent orientation relative to this edge area.
摘要翻译：具有多孔硅或多孔氧化硅区域的结构元件，其从至少大部分为晶体硅的区域的边缘区域开始从孔化获得。相对于边缘区域，晶体硅具有取向不同于<100>取向的晶体取向或者由于对称原因等同的取向。该结构元件适用于质量流量传感器，用于传感器和/或致动器结构或气体传感器的热解耦的部件。此外，描述了用于设定结构元件的多孔硅或多孔氧化硅区域的热导率的方法。特别地，在从区域的边缘区域开始的晶体硅的孔化中，选择硅相对于边缘区域的晶体取向，使得热导率沿垂直于与边缘区域不同的边缘区域的方向，特别是低于导热率，其在相对于该边缘区域具有<100>取向或等同取向的晶体硅的另外类似的孔化中在该方向上。

4. 发明申请

US20080093694A1 Method for manufacturing a semcoductor component and a semiconductor component, in particular a diaphragm sensor 有权
标题翻译：用于制造半导体元件和半导体元件的方法，特别是光阑传感器
公开(公告)号：US20080093694A1
公开(公告)日：2008-04-24
申请号：US12001289
申请日：2007-12-10
申请人： Hubert Benzel , Heribert Weber , Hans Artmann , Thorsten Pannek , Frank Schafer
发明人： Hubert Benzel , Heribert Weber , Hans Artmann , Thorsten Pannek , Frank Schafer
IPC分类号： H01L29/02 , H01L21/02
CPC分类号： B81C1/00182 , B81B2203/0127 , B81B2203/0315 , B81C2201/0115 , B81C2201/0136 , G01L9/0042
摘要： In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.
摘要翻译：在制造具有半导体衬底的半导体部件的方法中，制造平坦的多孔隔膜层和多孔隔膜层下方的空腔，以形成用于部件的无支撑结构。在第一种方法中，半导体衬底可以在膜片区域中接收不同于空腔的掺杂。这允许产生不同的孔径和/或孔隙率，其用于制造用于改善蚀刻气体输送的空腔。此外，可以在隔膜区域中产生中孔，并且可以在将要成为空腔区域的地方制造纳米孔作为辅助结构。

5. 发明授权

US07306966B2 Method for producing a semiconductor component and a semiconductor component, especially a membrane sensor 有权
标题翻译：用于制造半导体部件和半导体部件的方法，特别是膜传感器
公开(公告)号：US07306966B2
公开(公告)日：2007-12-11
申请号：US10486182
申请日：2002-07-25
申请人： Hubert Benzel , Heribert Weber , Hans Artmann , Thorsten Pannek , Frank Schäfer
发明人： Hubert Benzel , Heribert Weber , Hans Artmann , Thorsten Pannek , Frank Schäfer
IPC分类号： H01L21/00
CPC分类号： B81C1/00182 , B81B2203/0127 , B81B2203/0315 , B81C2201/0115 , B81C2201/0136 , G01L9/0042
摘要： In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.
摘要翻译：在制造具有半导体衬底的半导体部件的方法中，制造平坦的多孔隔膜层和多孔隔膜层下方的空腔，以形成用于部件的无支撑结构。在第一种方法中，半导体衬底可以在膜片区域中接收不同于空腔的掺杂。这允许产生不同的孔径和/或孔隙率，其用于制造用于改善蚀刻气体输送的空腔。此外，可以在隔膜区域中产生介孔，并且可以在将要成为空腔区域的地方制造纳米孔作为辅助结构。

6. 发明授权

US06521313B1 Method for producing a diaphragm sensor unit and diaphragm sensor unit 失效
公开(公告)号：US06521313B1
公开(公告)日：2003-02-18
申请号：US10020353
申请日：2001-12-12
申请人： Hans Artmann , Thorsten Pannek
发明人： Hans Artmann , Thorsten Pannek
IPC分类号： H01L2100
CPC分类号： B81B3/0081 , B81B2203/0127 , B81B2203/0315 , B81C2201/0115 , B81C2201/0136 , Y10T428/17
摘要： In a method for producing a diaphragm sensor unit having a semiconductor material substrate, a flat diaphragm and an insulating well for thermal insulation below the diaphragm are generated, for the formation of sensor element structures for at least one sensor. The substrate, made of semiconductor material, in a specified region, which defines sensor element structures, receives a deliberately different doping from the surrounding semiconductor material, that porous semiconductor material is generated from semiconductor material sections between the regions distinguished by doping, and semiconductor material in the well region under semiconductor is rendered porous and under parts of the sensor element structure is removed and/or rendered porous.

7. 发明授权

US07040160B2 Flow sensor 有权
标题翻译：流量传感器
公开(公告)号：US07040160B2
公开(公告)日：2006-05-09
申请号：US10432542
申请日：2001-10-11
申请人： Hans Artmann , Thorsten Pannek , Uwe Konzelmann
发明人： Hans Artmann , Thorsten Pannek , Uwe Konzelmann
IPC分类号： G01F1/68
CPC分类号： G01F1/6845
摘要： A flow sensor is described, in particular for analysis of gas flows, having a substrate and at least one sensor component which is sensitive to a flow of a medium, the sensor component being separated from the substrate in at least some areas by a region that is a poor heat conductor compared to the substrate. In addition, the region having poor heat conductivity is a porous silicon region or a porous silicon oxide region, or the region having poor heat conductivity is a recess in the surface of the substrate above which the sensor element (15) is situated on at least one web which bridges the recess and is at least mostly unsupported. The flow sensor described here is particularly suitable for angle-dependent detection of a gas flow.
摘要翻译：描述了一种流量传感器，特别是用于分析气体流动，具有基底和至少一个对介质流动敏感的传感器部件，传感器部件在至少一些区域与基底分离，区域为与基底相比，导热系数差。此外，导热性差的区域是多孔硅区域或多孔氧化硅区域，或者导热性差的区域是衬底表面中的凹部，传感器元件（15）至少位于其上一个网桥连接凹槽，并且至少几乎不被支撑。这里描述的流量传感器特别适用于气流的角度依赖检测。

8. 发明授权

US06906392B2 Micromechanical component 失效
标题翻译：微机械部件
公开(公告)号：US06906392B2
公开(公告)日：2005-06-14
申请号：US10381307
申请日：2002-07-06
申请人： Hubert Benzel , Heribert Weber , Michael Bauer , Hans Artmann , Thorsten Pannek , Frank Schaefer , Christian Krummel
发明人： Hubert Benzel , Heribert Weber , Michael Bauer , Hans Artmann , Thorsten Pannek , Frank Schaefer , Christian Krummel
IPC分类号： B81B3/00 , G01N27/04 , G01N27/12 , G01N27/18 , G01N27/22 , H01L27/14 , G01N7/00
CPC分类号： B81B3/0081 , B81B2203/0127 , B81C2201/0115 , G01N27/227
摘要： A micromechanical component includes a substrate and a cover layer deposited on the substrate, underneath the cover layer, a region of porous material being provided which mechanically supports and thermally insulates the cover layer. On the cover layer, a heating device is provided to heat the cover layer above the region; and above the region, a detector is provided to measure an electric property of a heated medium provided above the region on the cover layer.
摘要翻译：微机械部件包括沉积在覆盖层下面的基底上的基底和覆盖层，提供机械支撑和热绝缘覆盖层的多孔材料区域。在覆盖层上，设置加热装置以加热该区域上方的覆盖层; 并且在该区域之上，提供检测器以测量设置在覆盖层上的区域上方的加热介质的电性质。

9. 发明授权

US06759265B2 Method for producing diaphragm sensor unit and diaphragm sensor unit 有权
标题翻译：膜片传感器单元和隔膜传感器单元的制造方法
公开(公告)号：US06759265B2
公开(公告)日：2004-07-06
申请号：US10268711
申请日：2002-10-10
申请人： Hans Artmann , Thorsten Pannek
发明人： Hans Artmann , Thorsten Pannek
IPC分类号： H01L2100
CPC分类号： B81C1/0069 , B81B2203/0127 , B81B2203/0315 , B81C2201/0115 , B81C2201/0136 , B81C2201/0139
摘要： In a method for producing a diaphragm sensor unit having a semiconductor material substrate, a flat diaphragm and an insulating well for thermal insulation below the diaphragm are generated, for the formation of sensor element structures for at least one sensor. The substrate, made of semiconductor material, in a specified region, which defines sensor element structures, receives a deliberately different doping from the surrounding semiconductor material, that porous semiconductor material is generated from semiconductor material sections between the regions distinguished by doping, and semiconductor material in the well region under semiconductor is rendered porous and under parts of the sensor element structure is removed and/or rendered porous.
摘要翻译：在制造具有半导体材料基板的隔膜传感器单元的方法中，产生用于形成用于至少一个传感器的传感器元件结构的隔膜下方的平坦隔膜和隔热绝缘孔。由限定传感器元件结构的特定区域中的由半导体材料制成的衬底接收与周围半导体材料的故意不同的掺杂，多孔半导体材料是由掺杂区域之间的半导体材料部分和半导体材料在半导体中的阱区域被多孔化并且在传感器元件结构的部分被去除和/或变得多孔的情况下。

10. 发明授权

US07276277B2 Micromechanical component, in particular a sensor element, having a stabilized membrane and a method of producing such a component 失效
标题翻译：具有稳定膜的微机械部件，特别是传感器元件和制造这种部件的方法
公开(公告)号：US07276277B2
公开(公告)日：2007-10-02
申请号：US09886522
申请日：2001-06-21
申请人： Hans Artmann , Robert Siegel
发明人： Hans Artmann , Robert Siegel
IPC分类号： H01L21/36
CPC分类号： G01K7/028 , Y10T428/24322 , Y10T428/24479 , Y10T428/24562 , Y10T428/24612 , Y10T428/26
摘要： A micromechanical component and a method of producing same are described; the component has a supporting body, in particular a silicon body, and a membrane which is connected to the supporting body and is unsupported at least in some areas. The membrane is also provided with at least one stabilizing element in an unsupported area in some areas of the surface. The method described here includes the following process steps: a) forming a first area within the supporting body including at least a first surface area of the supporting body; b) forming a second surface area of the supporting body which is in the first surface area in at least some areas; c) selective etching of the first area down to an adjustable depth, forming porous silicon, the second surface area being at least almost not etched; d) depositing a membrane layer on the surface of the supporting body, with the membrane layer covering the first area that has been rendered porous in at least some areas and covering the second surface area in at least some areas, and e) selectively removing the first area which has been rendered porous.
摘要翻译：描述微机械部件及其制造方法; 该部件具有支撑体，特别是硅体，以及连接到支撑体并至少在一些区域中不被支撑的膜。膜还在表面的一些区域中在非支撑区域中设置有至少一个稳定元件。这里描述的方法包括以下工艺步骤：a）在支撑体内形成至少包括支撑体的第一表面区域的第一区域; b）形成在至少一些区域中位于第一表面区域中的支撑体的第二表面区域; c）将第一区域选择性蚀刻到可调节的深度，形成多孔硅，第二表面区域至少几乎不被蚀刻; d）在所述支撑体的表面上沉积膜层，所述膜层覆盖至少一些区域中已被多孔的第一区域并覆盖至少一些区域中的第二表面区域，以及e）选择性地去除第一个已经被多孔的区域。

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