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1. 发明授权

US07709933B2 Structural element having a porous region at least regionally provided with a cover layer and its use as well as method for setting the thermal conductivity of a porous region 失效
标题翻译：具有至少区域地设置有覆盖层的多孔区域的结构元件及其用途以及用于设定多孔区域的热导率的方法
公开(公告)号：US07709933B2
公开(公告)日：2010-05-04
申请号：US10742055
申请日：2003-12-18
申请人： Hans Artmann , Thorsten Pannek , Hans-Peter Trah , Franz Laermer
发明人： Hans Artmann , Thorsten Pannek , Hans-Peter Trah , Franz Laermer
IPC分类号： H01L31/036
CPC分类号： C04B38/007 , B81C1/00492 , B81C2201/0115 , C04B2111/28 , C04B35/14
摘要： A structural element having a region of porous silicon or porous silicon oxide, which was obtained from a porization, starting from an edge area of the region, in at least largely crystalline silicon. Relative to the edge area, the crystalline silicon has a crystal orientation that has an orientation that differs from a orientation or from an orientation that is equivalent for reasons of symmetry. This structural element is suited for use in a mass-flow sensor, in a component for the thermal decoupling of sensor and/or actuator structures, or a gas sensor. Furthermore, methods for setting the thermal conductivity of a region of porous silicon or porous silicon oxide of a structural element are described. In particular, in a porization of crystalline silicon, starting from an edge area of the region, the crystalline orientation of the silicon relative to the edge area is selected such that a thermal conductivity comes about along a direction perpendicular to the edge area that differs from, in particular is lower than, the thermal conductivity, that comes about in this direction in an otherwise analogous porization of crystalline silicon having a orientation or an equivalent orientation relative to this edge area.
摘要翻译：具有多孔硅或多孔氧化硅区域的结构元件，其从至少大部分为晶体硅的区域的边缘区域开始从孔化获得。相对于边缘区域，晶体硅具有取向不同于<100>取向的晶体取向或者由于对称原因等同的取向。该结构元件适用于质量流量传感器，用于传感器和/或致动器结构或气体传感器的热解耦的部件。此外，描述了用于设定结构元件的多孔硅或多孔氧化硅区域的热导率的方法。特别地，在从区域的边缘区域开始的晶体硅的孔化中，选择硅相对于边缘区域的晶体取向，使得热导率沿垂直于与边缘区域不同的边缘区域的方向，特别是低于导热率，其在相对于该边缘区域具有<100>取向或等同取向的晶体硅的另外类似的孔化中在该方向上。

2. 发明授权

US07679154B2 Method for manufacturing a semiconductor component and a semiconductor component, in particular a diaphragm sensor 有权
标题翻译：用于制造半导体部件和半导体部件的方法，特别是膜片传感器
公开(公告)号：US07679154B2
公开(公告)日：2010-03-16
申请号：US12001289
申请日：2007-12-10
申请人： Hubert Benzel , Heribert Weber , Hans Artmann , Thorsten Pannek , Frank Schäfer
发明人： Hubert Benzel , Heribert Weber , Hans Artmann , Thorsten Pannek , Frank Schäfer
IPC分类号： H01L29/84
CPC分类号： B81C1/00182 , B81B2203/0127 , B81B2203/0315 , B81C2201/0115 , B81C2201/0136 , G01L9/0042
摘要： In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.
摘要翻译：在制造具有半导体衬底的半导体部件的方法中，制造平坦的多孔隔膜层和多孔隔膜层下方的空腔，以形成用于部件的无支撑结构。在第一种方法中，半导体衬底可以在膜片区域中接收不同于空腔的掺杂。这允许产生不同的孔径和/或孔隙率，其用于制造用于改善蚀刻气体输送的空腔。此外，可以在隔膜区域中产生介孔，并且可以在将要成为空腔区域的地方制造纳米孔作为辅助结构。

3. 发明申请

US20080093694A1 Method for manufacturing a semcoductor component and a semiconductor component, in particular a diaphragm sensor 有权
标题翻译：用于制造半导体元件和半导体元件的方法，特别是光阑传感器
公开(公告)号：US20080093694A1
公开(公告)日：2008-04-24
申请号：US12001289
申请日：2007-12-10
申请人： Hubert Benzel , Heribert Weber , Hans Artmann , Thorsten Pannek , Frank Schafer
发明人： Hubert Benzel , Heribert Weber , Hans Artmann , Thorsten Pannek , Frank Schafer
IPC分类号： H01L29/02 , H01L21/02
CPC分类号： B81C1/00182 , B81B2203/0127 , B81B2203/0315 , B81C2201/0115 , B81C2201/0136 , G01L9/0042
摘要： In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.
摘要翻译：在制造具有半导体衬底的半导体部件的方法中，制造平坦的多孔隔膜层和多孔隔膜层下方的空腔，以形成用于部件的无支撑结构。在第一种方法中，半导体衬底可以在膜片区域中接收不同于空腔的掺杂。这允许产生不同的孔径和/或孔隙率，其用于制造用于改善蚀刻气体输送的空腔。此外，可以在隔膜区域中产生中孔，并且可以在将要成为空腔区域的地方制造纳米孔作为辅助结构。

4. 发明授权

US07306966B2 Method for producing a semiconductor component and a semiconductor component, especially a membrane sensor 有权
标题翻译：用于制造半导体部件和半导体部件的方法，特别是膜传感器
公开(公告)号：US07306966B2
公开(公告)日：2007-12-11
申请号：US10486182
申请日：2002-07-25
申请人： Hubert Benzel , Heribert Weber , Hans Artmann , Thorsten Pannek , Frank Schäfer
发明人： Hubert Benzel , Heribert Weber , Hans Artmann , Thorsten Pannek , Frank Schäfer
IPC分类号： H01L21/00
CPC分类号： B81C1/00182 , B81B2203/0127 , B81B2203/0315 , B81C2201/0115 , B81C2201/0136 , G01L9/0042
摘要： In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.
摘要翻译：在制造具有半导体衬底的半导体部件的方法中，制造平坦的多孔隔膜层和多孔隔膜层下方的空腔，以形成用于部件的无支撑结构。在第一种方法中，半导体衬底可以在膜片区域中接收不同于空腔的掺杂。这允许产生不同的孔径和/或孔隙率，其用于制造用于改善蚀刻气体输送的空腔。此外，可以在隔膜区域中产生介孔，并且可以在将要成为空腔区域的地方制造纳米孔作为辅助结构。

5. 发明授权

US06521313B1 Method for producing a diaphragm sensor unit and diaphragm sensor unit 失效
公开(公告)号：US06521313B1
公开(公告)日：2003-02-18
申请号：US10020353
申请日：2001-12-12
申请人： Hans Artmann , Thorsten Pannek
发明人： Hans Artmann , Thorsten Pannek
IPC分类号： H01L2100
CPC分类号： B81B3/0081 , B81B2203/0127 , B81B2203/0315 , B81C2201/0115 , B81C2201/0136 , Y10T428/17
摘要： In a method for producing a diaphragm sensor unit having a semiconductor material substrate, a flat diaphragm and an insulating well for thermal insulation below the diaphragm are generated, for the formation of sensor element structures for at least one sensor. The substrate, made of semiconductor material, in a specified region, which defines sensor element structures, receives a deliberately different doping from the surrounding semiconductor material, that porous semiconductor material is generated from semiconductor material sections between the regions distinguished by doping, and semiconductor material in the well region under semiconductor is rendered porous and under parts of the sensor element structure is removed and/or rendered porous.

6. 发明授权

US07040160B2 Flow sensor 有权
标题翻译：流量传感器
公开(公告)号：US07040160B2
公开(公告)日：2006-05-09
申请号：US10432542
申请日：2001-10-11
申请人： Hans Artmann , Thorsten Pannek , Uwe Konzelmann
发明人： Hans Artmann , Thorsten Pannek , Uwe Konzelmann
IPC分类号： G01F1/68
CPC分类号： G01F1/6845
摘要： A flow sensor is described, in particular for analysis of gas flows, having a substrate and at least one sensor component which is sensitive to a flow of a medium, the sensor component being separated from the substrate in at least some areas by a region that is a poor heat conductor compared to the substrate. In addition, the region having poor heat conductivity is a porous silicon region or a porous silicon oxide region, or the region having poor heat conductivity is a recess in the surface of the substrate above which the sensor element (15) is situated on at least one web which bridges the recess and is at least mostly unsupported. The flow sensor described here is particularly suitable for angle-dependent detection of a gas flow.
摘要翻译：描述了一种流量传感器，特别是用于分析气体流动，具有基底和至少一个对介质流动敏感的传感器部件，传感器部件在至少一些区域与基底分离，区域为与基底相比，导热系数差。此外，导热性差的区域是多孔硅区域或多孔氧化硅区域，或者导热性差的区域是衬底表面中的凹部，传感器元件（15）至少位于其上一个网桥连接凹槽，并且至少几乎不被支撑。这里描述的流量传感器特别适用于气流的角度依赖检测。

7. 发明授权

US06906392B2 Micromechanical component 失效
标题翻译：微机械部件
公开(公告)号：US06906392B2
公开(公告)日：2005-06-14
申请号：US10381307
申请日：2002-07-06
申请人： Hubert Benzel , Heribert Weber , Michael Bauer , Hans Artmann , Thorsten Pannek , Frank Schaefer , Christian Krummel
发明人： Hubert Benzel , Heribert Weber , Michael Bauer , Hans Artmann , Thorsten Pannek , Frank Schaefer , Christian Krummel
IPC分类号： B81B3/00 , G01N27/04 , G01N27/12 , G01N27/18 , G01N27/22 , H01L27/14 , G01N7/00
CPC分类号： B81B3/0081 , B81B2203/0127 , B81C2201/0115 , G01N27/227
摘要： A micromechanical component includes a substrate and a cover layer deposited on the substrate, underneath the cover layer, a region of porous material being provided which mechanically supports and thermally insulates the cover layer. On the cover layer, a heating device is provided to heat the cover layer above the region; and above the region, a detector is provided to measure an electric property of a heated medium provided above the region on the cover layer.
摘要翻译：微机械部件包括沉积在覆盖层下面的基底上的基底和覆盖层，提供机械支撑和热绝缘覆盖层的多孔材料区域。在覆盖层上，设置加热装置以加热该区域上方的覆盖层; 并且在该区域之上，提供检测器以测量设置在覆盖层上的区域上方的加热介质的电性质。

8. 发明授权

US06759265B2 Method for producing diaphragm sensor unit and diaphragm sensor unit 有权
标题翻译：膜片传感器单元和隔膜传感器单元的制造方法
公开(公告)号：US06759265B2
公开(公告)日：2004-07-06
申请号：US10268711
申请日：2002-10-10
申请人： Hans Artmann , Thorsten Pannek
发明人： Hans Artmann , Thorsten Pannek
IPC分类号： H01L2100
CPC分类号： B81C1/0069 , B81B2203/0127 , B81B2203/0315 , B81C2201/0115 , B81C2201/0136 , B81C2201/0139
摘要： In a method for producing a diaphragm sensor unit having a semiconductor material substrate, a flat diaphragm and an insulating well for thermal insulation below the diaphragm are generated, for the formation of sensor element structures for at least one sensor. The substrate, made of semiconductor material, in a specified region, which defines sensor element structures, receives a deliberately different doping from the surrounding semiconductor material, that porous semiconductor material is generated from semiconductor material sections between the regions distinguished by doping, and semiconductor material in the well region under semiconductor is rendered porous and under parts of the sensor element structure is removed and/or rendered porous.
摘要翻译：在制造具有半导体材料基板的隔膜传感器单元的方法中，产生用于形成用于至少一个传感器的传感器元件结构的隔膜下方的平坦隔膜和隔热绝缘孔。由限定传感器元件结构的特定区域中的由半导体材料制成的衬底接收与周围半导体材料的故意不同的掺杂，多孔半导体材料是由掺杂区域之间的半导体材料部分和半导体材料在半导体中的阱区域被多孔化并且在传感器元件结构的部分被去除和/或变得多孔的情况下。

9. 发明授权

US06506621B1 Method for producing a diaphragm sensor array and diaphragm sensor array 失效
标题翻译：隔膜传感器阵列和隔膜传感器阵列的制造方法
公开(公告)号：US06506621B1
公开(公告)日：2003-01-14
申请号：US10016026
申请日：2001-12-12
申请人： Hans Artmann , Thorsten Pannek , Robert Siegel
发明人： Hans Artmann , Thorsten Pannek , Robert Siegel
IPC分类号： H01L2100
CPC分类号： G01J5/06 , B81B3/0081 , B81B2203/0127 , B81B2203/0315 , B81C2201/0115 , B81C2201/0136 , G01J5/10
摘要： In a method for producing a diaphragm sensor array having a semiconductor material substrate on which a plurality of planar diaphragm regions is arranged as a carrier layer for sensor elements, the planar diaphragm regions are thermally decoupled from one another by crosspieces made of a material having clearly better heat conductive properties compared to the diaphragm regions and the lateral surroundings of the crosspieces. Masking for a subsequent step for producing porous semiconductor material is applied at the locations of the semiconductor material substrate at which the crosspieces for the thermal decoupling are formed, and the semiconductor regions not protected by the masking are rendered porous and the diaphragm regions are produced thereupon. Instead of using porous silicon, a plasma etching process may be performed from the backside of a semiconductor material substrate. In particular, high integration densities of diaphragm sensors may be achieved with both methods. A diaphragm sensor array is produced by one of the methods.
摘要翻译：在具有半导体材料基板的膜片传感器阵列的制造方法中，多个平面膜片区域被布置为传感器元件的载体层，平面隔膜区域通过由具有清楚的材料制成的横条而彼此热分离与隔膜区域和横梁的横向周围相比，具有更好的导热性能。在用于制造多孔半导体材料的后续步骤中的掩模被应用于半导体材料基板的用于形成用于热解耦的接头的位置处，并且未被掩蔽保护的半导体区域变得多孔，并且在其上产生隔膜区域。代替使用多孔硅，可以从半导体材料基板的背面进行等离子体蚀刻工艺。特别地，可以通过两种方法实现膜片传感器的高集成度。通过这些方法之一产生膜片传感器阵列。

10. 发明授权

US06726815B1 Electrochemical etching cell 有权
标题翻译：电化学蚀刻池
公开(公告)号：US06726815B1
公开(公告)日：2004-04-27
申请号：US09937926
申请日：2001-12-26
申请人： Hans Artmann , Wilhelm Frey , Franz Laermer
发明人： Hans Artmann , Wilhelm Frey , Franz Laermer
IPC分类号： C25B900
CPC分类号： C25F7/00 , Y10S204/12
摘要： An electrochemical etching cell (1) is proposed for etching an etching body (15) made at least superficially of an etching material. The etching cell (1) has at least one chamber filled with an electrolyte, and is provided with a first electrode (13), which at least superficially has a first electrode material, and with a second electrode (13′) which at least superficially has a second electrode material. Furthermore, the etching body (15) is in contact, at least region-wise, with the electrolyte. In this context, the first electrode material and the second electrode material are selected such that, after the etching, the etching body (15) is not contaminated and/or is not impaired in its properties by the electrode materials. In particular, the electrode materials are the same materials as the etching material. Also proposed is a method for etching an etching body (15) using this etching cell (1), the first and/or the second electrode (13, 13′) being used as a sacrificial electrode. The proposed etching cell is particularly suitable for etching silicon wafers in a CMOS-compatible production line.
摘要翻译：提出一种用于蚀刻蚀刻材料至少表面蚀刻的蚀刻体（15）的电化学蚀刻单元（1）。蚀刻单元（1）具有填充有电解质的至少一个室，并且设置有至少表面具有第一电极材料的第一电极（13）和至少表面上的第二电极（13'）具有第二电极材料。此外，蚀刻体（15）至少在区域上与电解质接触。在这种情况下，选择第一电极材料和第二电极材料，使得在蚀刻之后，蚀刻体（15）不被电极材料污染和/或不损害其性能。特别地，电极材料与蚀刻材料相同。还提出了使用该蚀刻单元（1）蚀刻蚀刻体（15）的方法，第一和/或第二电极（13,13'）用作牺牲电极。所提出的蚀刻单元特别适用于在CMOS兼容的生产线中蚀刻硅晶片。

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