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1. 发明申请

US20130180360A1 Method of Manufacturing Iron-Based Powder 有权
标题翻译：铁基粉末的制造方法
公开(公告)号：US20130180360A1
公开(公告)日：2013-07-18
申请号：US13824192
申请日：2011-09-15
申请人： Ha Neul Kim , Eon Sik Lee , Oh-Joon Kwon , Sun Jong Park , Hee Soo Kang
发明人： Ha Neul Kim , Eon Sik Lee , Oh-Joon Kwon , Sun Jong Park , Hee Soo Kang
IPC分类号： B22F9/08
CPC分类号： B22F9/082 , B22F2009/0828 , B22F2009/0888 , C21C5/28 , Y02P10/216
摘要： A method of manufacturing iron-based powder includes providing an iron-based molten steel manufactured through a iron making process and a steelmaking process to a tundish; and performing water atomization over the molten steel discharged through a nozzle connected to the tundish. The iron-based powder is manufactured from the molten steel refined after a molten iron tapped from a iron making process is charged into a converter without a pre-treatment process of the molten iron, thus economically providing the highly clean iron-based powder.
摘要翻译：制造铁基粉末的方法包括：通过炼铁工艺和炼钢工艺制造的铁基钢水到中间包; 并在通过与中间包连接的喷嘴排出的钢水上进行水雾化。铁水粉末由炼铁过程中的铁水从炼铁过程中抽出的铁水加入到转炉中，而不用铁水的预处理，从而经济地提供高度清洁的铁基粉末。

2. 发明授权

US09222157B2 High-carbon iron-based amorphous alloy using molten pig iron and method of manufacturing the same 有权
标题翻译：使用熔融生铁的高碳铁基非晶态合金及其制造方法
公开(公告)号：US09222157B2
公开(公告)日：2015-12-29
申请号：US13817930
申请日：2011-06-27
申请人： Sang-Won Kim , Gab-Sik Byun , Young-Geun Son , Eon-Byeong Park , Sang-Hoon Yoon , Sang-Wook Ha , Oh-Joon Kwon , Seung-Dueg Choi , Seong Hoon Yi
发明人： Sang-Won Kim , Gab-Sik Byun , Young-Geun Son , Eon-Byeong Park , Sang-Hoon Yoon , Sang-Wook Ha , Oh-Joon Kwon , Seung-Dueg Choi , Seong Hoon Yi
IPC分类号： C22C45/02 , C21D5/00
CPC分类号： C21D6/00 , C21D1/00 , C21D5/00 , C22C1/002 , C22C1/02 , C22C33/003 , C22C45/02
摘要： Provided is an iron-based amorphous alloy and a method of manufacturing the same.More particularly, provided is an high carbon iron-based amorphous alloy expressed by a general formula FeαCβSiγBxPyCrz, wherein α, β, γ, x, y and z are atomic % of iron (Fe), carbon (C), silicon (Si), boron (B), phosphorus (P), and chrome (Cr) respectively, wherein α is expressed by α=100−(β+γ+x+y+z) atomic %, β is expressed by 13.5 atomic %≦β≦17.8 atomic %, γ is expressed by 0.30 atomic %≦γ≦1.50 atomic %, x is expressed by 0.1 atomic %≦x≦4.0 atomic %, y is expressed by 0.8 atomic %≦y≦7.7 atomic %, and z is expressed by 0.1 atomic %≦z≦3.0 atomic %.
摘要翻译：提供一种铁基非晶合金及其制造方法。更具体地说，提供了由通式FeαC＆bgr;SiγBxPyCrz表示的高碳铁基非晶合金，其中α，bgr，γ，x，y和z是铁（Fe），碳（C），硅（Si），硼（B），磷（P）和铬（Cr），其中α由α= 100 - （＆bgr; +γ+ x + y + z）表示，原子％由13.5原子％＆nlE;＆bgr;＆nlE; 17.8原子％表示，γ由0.30原子％＆lt; nEE表示;γ＆nlE; 1.50原子％，x表示为0.1原子％＆nlE; x＆lt; lE; 4.0原子％，y表示为 0.8原子％＆nlE; y＆nlE; 7.7原子％，z表示为0.1原子％＆amp; nlE; z＆nlE; 3.0原子％。

3. 发明授权

US5773353A Method of fabricating a semiconductor substrate 失效
标题翻译：半导体衬底的制造方法
公开(公告)号：US5773353A
公开(公告)日：1998-06-30
申请号：US564505
申请日：1995-11-29
申请人： Oh-Joon Kwon , Jung-Hee Lee , Yong-Hyun Lee
发明人： Oh-Joon Kwon , Jung-Hee Lee , Yong-Hyun Lee
IPC分类号： H01L21/18 , H01L21/762 , H01L21/76
CPC分类号： H01L21/76264 , H01L21/7627 , H01L21/76283 , Y10S438/96
摘要： A semiconductor substrate and a method of fabricating the same, and provides which the active area to be formed the active element is defined by the trench filled with any conductive polycrystal silicon in which any portion of a large number of the epitaxial layer is crystally grown on any conductive silicon substrate, and the multi-aperture silicon oxide layer is formed from the metal line to be used to the passive element or the transmitting line outside the trench, so that the interference between the passive element and the semiconductor substrate is prevented, and to attenuate the transmitting signal prevents to be attenuated in the high frequency band operation. Therefore, the semiconductor substrate for a unit active element and the MMIC to be able to operate the high frequency band is manufactured into the silicon, and thus it is advantageous to reduce the cost and enhance the yield. Silicon oxide layer is formed from the metal line to be used to the passive element or the transmitting line outside the trench, so that the interference between the passive element and the semiconductor substrate is prevented, and to attenuate the transmitting signal prevents to be attenuated in the high frequency band operation. Therefore, the semiconductor substrate for a unit active element and the MMIC to be able to operate the high frequency band is manufactured into the silicon, and thus it is advantageous to reduce the cost and enhance the yield.
摘要翻译：一种半导体衬底及其制造方法，其特征在于，所形成的有源区域由填充有任何导电多晶硅的沟槽限定，其中大量外延层的任何部分在其上生长在任何导电硅衬底和多孔径氧化硅层由用于沟槽外的无源元件或发射线的金属线形成，从而防止了无源元件与半导体衬底之间的干涉，衰减发送信号防止在高频带操作中被衰减。因此，将单位有源元件的半导体衬底和能够操作高频带的MMIC制造成硅，因此有利于降低成本并提高产量。氧化硅层由用于无源元件或沟槽外部的传输线的金属线形成，从而防止无源元件与半导体衬底之间的干涉，并且衰减发射信号防止衰减高频段操作。因此，将单位有源元件的半导体衬底和能够操作高频带的MMIC制造成硅，因此降低成本并提高产量是有利的。

4. 发明授权

US5459084A Method for fabricating hetero-junction bipolar transistor having reduced base parasitic resistance 失效
标题翻译：具有降低的基极寄生电阻的异质结双极晶体管的制造方法
公开(公告)号：US5459084A
公开(公告)日：1995-10-17
申请号：US358533
申请日：1994-12-19
申请人： Byung-Ryul Ryum , Deok-Ho Cho , Tae-Hyeon Han , Soo-Min Lee , Oh-Joon Kwon
发明人： Byung-Ryul Ryum , Deok-Ho Cho , Tae-Hyeon Han , Soo-Min Lee , Oh-Joon Kwon
IPC分类号： H01L21/331 , H01L29/737 , H01L21/265
CPC分类号： H01L29/66242 , H01L29/7378 , Y10S148/01 , Y10S148/011 , Y10S148/072
摘要： Disclosed is a fabrication of a hetero-junction bipolar transistor in which a base parasitic capacitance is fully reduced by using a metallic silicide as a base, comprising the steps of injecting an impurity in a silicon substrate to form a conductive buried collector region; growing a collector epitaxial layer on the buried collector region and forming a field oxide layer; selectively injecting an impurity into the collector epitaxial layer to form a collector sinker; sequentially forming a base layer and an first oxide layer thereon; patterning the first oxide layer to define an extrinsic base region; ion-implanting an impurity in the extrinsic base region using a patterned oxide layer as a mask and removing the patterned oxide layer; depositing a metallic silicide film thereon to form a base electrode thin film; forming a capping oxide layer of about 500 .ANG. thickness only on the base electrode thin film; forming an isolating oxide layer thereon and sequentially and selectively removing the isolating oxide layer, the capping oxide layer, the base electrode thin film and the base layer using a patterned photomask to form a pattern, the isolating oxide layer being provided to electrically isolate base and emitter; forming a side wall oxide layer at both side edges of the pattern; removing a portion of the isolating oxide layer to define an emitter region; forming a passivation layer thereon and selectively removing the passivation layer to form contact holes; and depositing a polysilicon layer doped with impurity ions in the contact holes to form electrodes.
摘要翻译：公开了通过使用金属硅化物作为基底而使基极寄生电容完全降低的异质结双极晶体管的制造方法，包括以下步骤：在硅衬底中注入杂质以形成导电的埋地集电区; 在掩埋的集电极区上生长集电极外延层并形成场氧化物层; 选择性地将杂质注入到集电极外延层中以形成集电极沉降片; 在其上依次形成基底层和第一氧化物层; 图案化第一氧化物层以限定外部碱性区域; 使用图案化氧化物层作为掩模在外部基极区域中离子注入杂质并除去图案化的氧化物层; 在其上沉积金属硅化物膜以形成基极薄膜; 仅在基极薄膜上形成约500厚度的覆盖氧化物层; 在其上形成隔离氧化物层，并使用图案化的光掩模依次选择性地去除隔离氧化物层，封盖氧化物层，基极薄膜和基层，形成图案，隔离氧化物层被提供以电隔离基极和发射器在图案的两个侧边缘处形成侧壁氧化物层; 去除所述隔离氧化物层的一部分以限定发射极区域; 在其上形成钝化层并选择性地去除钝化层以形成接触孔; 以及在所述接触孔中沉积掺杂有杂质离子的多晶硅层以形成电极。

5. 发明申请

US20130343716A1 OPTICAL CABLE TERMINAL BOX 有权
标题翻译：光缆端子盒
公开(公告)号：US20130343716A1
公开(公告)日：2013-12-26
申请号：US14003977
申请日：2012-03-07
申请人： Oh-Joon Kwon , Joon Huh , Gyeong-Ho Jang , Pyung-Rae Ahn
发明人： Oh-Joon Kwon , Joon Huh , Gyeong-Ho Jang , Pyung-Rae Ahn
IPC分类号： G02B6/44 , G02B6/46
CPC分类号： G02B6/4441 , G02B6/445 , G02B6/46 , Y10T29/49826
摘要： An optical cable terminal box for distributing an optical cable with a plurality of cores to subscriber lines is provided. The optical cable terminal box may include a housing having a slot, the slot having a first receiving groove formed at an edge of the slot. The optical cable terminal box may also include a cover member coupled to the housing to close the slot, and the cover member may have a second receiving groove formed at an edge of the cover member. When the cover member closes the slot, the first and second grooves may be coupled to each other to form a wiring hole that is configured to pass an optical cable therethrough.
摘要翻译：提供了一种用于向订户线路分配具有多个核心的光缆的光缆终端盒。光缆接线盒可以包括具有槽的壳体，该槽具有形成在槽的边缘处的第一接收槽。光缆接线盒还可以包括联接到壳体以封闭槽的盖构件，并且盖构件可以具有形成在盖构件的边缘处的第二容纳槽。当盖构件关闭槽时，第一和第二槽可以彼此联接以形成布线孔，其配置成使光缆穿过其中。

6. 发明授权

US09008482B2 Optical cable terminal box 有权
标题翻译：光缆接线盒
公开(公告)号：US09008482B2
公开(公告)日：2015-04-14
申请号：US14003977
申请日：2012-03-07
申请人： Oh-Joon Kwon , Joon Huh , Gyeong-Ho Jang , Pyung-Rae Ahn
发明人： Oh-Joon Kwon , Joon Huh , Gyeong-Ho Jang , Pyung-Rae Ahn
IPC分类号： G02B6/00 , G02B6/44 , G02B6/46
CPC分类号： G02B6/4441 , G02B6/445 , G02B6/46 , Y10T29/49826
摘要： An optical cable terminal box for distributing an optical cable with a plurality of cores to subscriber lines is provided. The optical cable terminal box may include a housing having a slot, the slot having a first receiving groove formed at an edge of the slot. The optical cable terminal box may also include a cover member coupled to the housing to close the slot, and the cover member may have a second receiving groove formed at an edge of the cover member. When the cover member closes the slot, the first and second grooves may be coupled to each other to form a wiring hole that is configured to pass an optical cable therethrough.
摘要翻译：提供了一种用于向订户线路分配具有多个核心的光缆的光缆终端盒。光缆接线盒可以包括具有槽的壳体，该槽具有形成在槽的边缘处的第一接收槽。光缆接线盒还可以包括联接到壳体以封闭槽的盖构件，并且盖构件可以具有形成在盖构件的边缘处的第二容纳槽。当盖构件关闭槽时，第一和第二槽可以彼此联接以形成布线孔，其配置成使光缆穿过其中。

7. 发明申请

US20130146185A1 High-Carbon Iron-Based Amorphous Alloy Using Molten Pig Iron and Method of Manufacturing the Same 有权
标题翻译：使用熔铁铁的高碳铁基非晶态合金及其制造方法
公开(公告)号：US20130146185A1
公开(公告)日：2013-06-13
申请号：US13817930
申请日：2011-06-27
申请人： Sang-Won Kim , Gab-Sik Byun , Young-Geun Son , Eon-Byeong Park , Sang-Hoon Yoon , Sang-Wook Ha , Oh-Joon Kwon , Seung-Dueg Choi , Seong Hoon Yi
发明人： Sang-Won Kim , Gab-Sik Byun , Young-Geun Son , Eon-Byeong Park , Sang-Hoon Yoon , Sang-Wook Ha , Oh-Joon Kwon , Seung-Dueg Choi , Seong Hoon Yi
IPC分类号： C22C45/02 , C21D5/00
CPC分类号： C21D6/00 , C21D1/00 , C21D5/00 , C22C1/002 , C22C1/02 , C22C33/003 , C22C45/02
摘要： Provided is an iron-based amorphous alloy and a method of manufacturing the same.More particularly, provided is an high carbon iron-based amorphous alloy expressed by a general formula FeαCβSiγBxPyCrz, wherein α, β, γ, x, y and z are atomic % of iron (Fe), carbon (C), silicon (Si), boron (B), phosphorus (P), and chrome (Cr) respectively, wherein a is expressed by α=100−(β+γ+x+y+z) atomic %, β is expressed by 13.5 atomic %≦β≦17.8 atomic %, γ is expressed by 0.30 atomic %≦γ≦1.50 atomic %, x is expressed by 0.1 atomic %≦x≦4.0 atomic %, y is expressed by 0.8 atomic %≦y≦7.7 atomic %, and z is expressed by 0.1 atomic %≦z≦3.0 atomic %.
摘要翻译：提供一种铁基非晶合金及其制造方法。更具体地说，提供了由通式FealphaCbetaSigammaBxPyCrz表示的高碳铁基非晶态合金，其中α，β，γ，x，y和z是铁（Fe），碳（C），硅（Si），硼（B），磷（P）和铬（Cr），其中a由α= 100-（β+γ+ x + y + z）原子％表示，β由13.5原子％ @ 17.8原子％，γ由0.30原子％@ @ @ 1.50原子％表示，x表示为0.1原子％@ x原子％4.0原子％，y由原子％以原子％计，原子％为7.7原子％，z为由0.1原子％@ z @ 3.0原子％表示。

8. 发明授权

US6034786A Apparatus and method for enlarging or reducing an image in an image processing system 失效
标题翻译：用于在图像处理系统中放大或缩小图像的装置和方法
公开(公告)号：US6034786A
公开(公告)日：2000-03-07
申请号：US922301
申请日：1997-09-02
申请人： Oh-Joon Kwon
发明人： Oh-Joon Kwon
IPC分类号： G06T3/40 , H04N1/393 , B41B15/00 , B41J15/00 , H04N1/40
CPC分类号： H04N1/3935
摘要： An apparatus and method for modifying an enlargement ratio or a reduction ratio of an image. An image reduction apparatus for reducing an image and for transmitting a reduced image to a printer includes a controller for generating position information relative to a pixel and a line constituting an image, a scanner for receiving an image of a document and for generating intermediate tone image data in pixel units according to the position information, and an image processor for receiving the position information, for determining whether or not the intermediate tone image data transmitted from the scanner should be supplied to the printer, and for discarding the intermediate tone image data or transmitting the intermediate tone image data to the printer according to the latter determination. An image enlargement apparatus includes the same basic components, but converts an enlargement ratio into a conversion ratio for enlargement, the enlargement process being followed by a reduction process as appropriate.
摘要翻译：一种用于修改图像的放大率或缩小比率的装置和方法。一种用于减少图像并将缩小图像发送到打印机的图像缩小装置包括：用于产生相对于像素的位置信息和构成图像的线的控制器，用于接收文档的图像并用于生成中间色调图像的扫描器根据位置信息以像素为单位的数据，以及用于接收位置信息的图像处理器，用于确定是否应向打印机提供从扫描仪发送的中间色调图像数据，以及用于丢弃中间色调图像数据或根据后一种确定将中间色调图像数据发送到打印机。图像放大装置包括相同的基本部件，但是将放大率转换为放大转换比，放大处理随后进行缩小处理。

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