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    • 1. 发明授权
    • Writable analog reference voltage storage device
    • 可写模拟参考电压存储器件
    • US5629891A
    • 1997-05-13
    • US622763
    • 1996-03-25
    • John LeMoncheckTimothy P. AllenGunter SteinbachCarver A. Mead
    • John LeMoncheckTimothy P. AllenGunter SteinbachCarver A. Mead
    • G05F1/46G05F3/24G11C5/14G11C11/56G11C27/00B11C16/04
    • G05F3/247G05F1/468G05F3/24G11C11/56G11C11/5621G11C27/005G11C5/147G11C16/30G11C2211/5634G11C7/16
    • A circuit for generating N analog voltage signals for reference or bias use employs N analog floating gate storage devices. Circuitry is provided so that all floating gate storage devices can be programmed to their target voltages individually or in parallel. Electron injection circuitry is provided for injecting electrons on to and a tunneling structure is provided for removing electrons from the floating gate of each floating gate storage device. A transistor structure with a lightly doped drain is provided for control of the tunneling structure. A capacitor is connected to each floating gate node to provide control of the injection structure. A dynamic analog storage element is provided to store the target voltage for the floating gate storage device. A comparator is provided to monitor the floating gate voltage and target voltage and control tunneling and injection. A digital storage device is provided to statically store the output of the comparator. During normal operation of the voltage reference circuit, the voltage comparator is configured as a follower amplifier to buffer the analog voltage output. During normal operation of the bias reference circuit, the current comparator is configured as a current mirror to buffer the analog current output.
    • 用于产生用于参考或偏置使用的N个模拟电压信号的电路使用N个模拟浮动栅极存储装置。 提供电路,使得所有浮动栅极存储装置可以单独地或并行地编程到它们的目标电压。 提供电子注入电路用于将电子注入到上面,并且提供隧道结构用于从每个浮动栅极存储装置的浮动栅极去除电子。 提供了具有轻掺杂漏极的晶体管结构,用于控制隧道结构。 电容器连接到每个浮动栅极节点以提供对注入结构的控制。 提供动态模拟存储元件以存储浮动栅极存储装置的目标电压。 提供比较器来监控浮栅电压和目标电压,并控制隧道和注入。 提供数字存储设备以静态存储比较器的输出。 在电压基准电路正常工作期间,电压比较器被配置为跟随放大器以缓冲模拟电压输出。 在偏置参考电路的正常工作期间,电流比较器被配置为电流镜来缓冲模拟电流输出。
    • 2. 发明授权
    • Adaptive analog minimum/maximum selector and subtractor circuit
    • 自适应模拟最小/最大选择器和减法器电路
    • US5408194A
    • 1995-04-18
    • US83905
    • 1993-06-25
    • Gunter SteinbachTimothy P. AllenCarver A. Mead
    • Gunter SteinbachTimothy P. AllenCarver A. Mead
    • G01R19/30G06G7/14H03K5/24
    • H03K5/24G01R19/30G06G7/14
    • A circuit for use as a channel of a minimum selector and subtractor circuit includes a P-Channel MOS transistor having a gate connected to an input node, a source connected to the output of a current source, and a drain connected to a fixed voltage source. The source of the P-Channel transistor is connectable to a common conductive line through a first switch. The source of the P-Channel transistor is also connected to the non-inverting input of a transconductance amplifier. The inverting input of the transconductance amplifier is connected to a first plate of a capacitor. The second plate of the capacitor is connected to a fixed voltage source such as ground. The output of the transconductance amplifier is connectable to its inverting input through a second switch. The output of the transconductance amplifier forms the output of the minimum selector and subtractor circuit. A plurality of individual channel circuits may all be connected to the common conductive line. The input nodes of the individual channel circuits are each individually connected to a different one of a plurality of analog input lines. The minimum selector and subtractor circuit determines the minimum analog value appearing on the plurality of lines and subtracts that value from the input values on all of the input lines. A maximum selector and subtractor circuit is formed by reversing transistor types.
    • 用作最小选择器和减法器电路的通道的电路包括具有连接到输入节点的栅极的P沟道MOS晶体管,连接到电流源的输出的源极和连接到固定电压源的漏极 。 P沟道晶体管的源极可通过第一开关连接到公共导线。 P沟道晶体管的源极也连接到跨导放大器的非反相输入端。 跨导放大器的反相输入连接到电容器的第一板。 电容器的第二板连接到诸如地之间的固定电压源。 跨导放大器的输出可通过第二个开关连接到其反相输入端。 跨导放大器的输出形成最小选择器和减法器电路的输出。 多个单独的通道电路都可以连接到公共导线。 各个通道电路的输入节点各自分别连接到多个模拟输入线中的不同的一个。 最小选择器和减法器电路确定出现在多行上的最小模拟值,并从所有输入行的输入值中减去该值。 通过反转晶体管类型形成最大选择器和减法器电路。
    • 3. 发明授权
    • Writable analog reference voltage storage device
    • 可写模拟参考电压存储器件
    • US5541878A
    • 1996-07-30
    • US267595
    • 1994-06-27
    • John LeMoncheckTimothy P. AllenGunter SteinbachCarver A. Mead
    • John LeMoncheckTimothy P. AllenGunter SteinbachCarver A. Mead
    • G05F1/46G05F3/24G11C5/14G11C11/56G11C27/00G11C16/04
    • G05F3/247G05F1/468G05F3/24G11C11/56G11C11/5621G11C27/005G11C5/147G11C16/30G11C2211/5634G11C7/16
    • A circuit for generating N analog voltage signals for reference or bias use employs N analog floating gate storage devices. Circuitry is provided so that all floating gate storage devices can be programmed to their target voltages individually or in parallel. Electron injection circuitry is provided for injecting electrons on to and a tunneling structure is provided for removing electrons from the floating gate of each floating gate storage device. A transistor structure with a lightly doped drain is provided for control of the tunneling structure. A capacitor is connected to each floating gate node to provide control of the injection structure. A dynamic analog storage element is provided to store the target voltage for the floating gate storage device. A comparator is provided to monitor the floating gate voltage and target voltage and control tunneling and injection. A digital storage device is provided to statically store the output of the comparator. During normal operation of the voltage reference circuit, the voltage comparator is configured as a follower amplifier to buffer the analog voltage output. During normal operation of the bias reference circuit, the current comparator is configured as a current mirror to buffer the analog current output.
    • 用于产生用于参考或偏置使用的N个模拟电压信号的电路使用N个模拟浮动栅极存储装置。 提供电路,使得所有浮动栅极存储装置可以单独地或并行地编程到它们的目标电压。 提供电子注入电路用于将电子注入到上面,并且提供隧道结构用于从每个浮动栅极存储装置的浮动栅极去除电子。 提供了具有轻掺杂漏极的晶体管结构,用于控制隧道结构。 电容器连接到每个浮动栅极节点以提供对注入结构的控制。 提供动态模拟存储元件以存储浮动栅极存储装置的目标电压。 提供一个比较器来监控浮动栅极电压和目标电压,并控制隧道和注入。 提供数字存储设备以静态存储比较器的输出。 在电压基准电路正常工作期间,电压比较器被配置为跟随放大器以缓冲模拟电压输出。 在偏置参考电路的正常工作期间,电流比较器被配置为电流镜以缓冲模拟电流输出。
    • 4. 发明授权
    • Paintbrush stylus for capacitive touch sensor pad
    • 用于电容式触摸传感器垫的画笔触控笔
    • US5488204A
    • 1996-01-30
    • US324438
    • 1994-10-17
    • Carver A. MeadRalph WolfTimothy P. Allen
    • Carver A. MeadRalph WolfTimothy P. Allen
    • G06F3/023G06F3/033G06F3/041G06F3/044G06F3/048G08C21/00
    • G06F3/04855G06F3/041G06F3/044G06F3/0488G06F3/04883G06F3/04892G06K9/00335
    • A proximity sensor system includes a touch-sensor pad with a sensor matrix array having a characteristic capacitance on horizontal and vertical conductors connected to sensor pads. The capacitance changes as a function of the proximity of an object or objects to the sensor matrix. The change in capacitance of each node in both the X and Y directions of the matrix due to the approach of an object is converted to a set of voltages in the X and Y directions. These voltages are processed by circuitry to develop electrical signals representative of the centroid of the profile of the object, i.e, its position in the X and Y dimensions. Noise reduction and background level setting techniques inherently available in the architecture are employed. A conductive paintbrush-type stylus is used to produce paint-like strokes on a display associated with the touch-sensor pad.
    • 接近传感器系统包括具有传感器矩阵阵列的触摸传感器焊盘,该传感器阵列在连接到传感器焊盘的水平和垂直导体上具有特征电容。 电容根据物体或传感器矩阵的接近度而变化。 由于物体的接近,矩阵的X和Y方向上的每个节点的电容的变化被转换成在X和Y方向上的一组电压。 这些电压由电路处理以产生表示物体轮廓的质心的电信号,即其在X和Y尺寸中的位置。 采用本构架中固有可用的降噪和背景设置技术。 导电画笔型触笔用于在与触摸传感器垫相关联的显示器上产生油漆状笔触。
    • 7. 发明授权
    • Adaptable MOS current mirror
    • 适应MOS电流镜
    • US5160899A
    • 1992-11-03
    • US781503
    • 1991-10-22
    • Janeen D. W. AndersonCarver A. MeadTimothy P. AllenMichael F. Wall
    • Janeen D. W. AndersonCarver A. MeadTimothy P. AllenMichael F. Wall
    • G06N3/063H01L27/06H03F1/02H03F1/30H03F3/45
    • G06N3/063H01L27/0629H03F1/0261H03F1/303H03F3/45479H03F3/45753H03F3/45977
    • An adaptable current mirror includes first and second MOS transistors. The first MOS transistor has its gate connected to its drain. A MOS capacitor structure is connected in series between the gate of the first MOS transistor and the gate of the second MOS transistor. Electrons may be placed onto and removed in an analog manner from a floating node associated with the second MOS transistor, usually the gate of the transistor, by application of first and second electrical control signals. A first electrical control signal controls the injection of electrons onto the floating node from an electron injection structure and the second electrical control signal controls the removal of electrons from the floating node by an electron removal structure. A plurality of adaptable current mirrors communicating with a plurality of current-carrying lines may be employed for indicating the output of the one of the plurality of current-carrying lines through which the most current is flowing.
    • 适应电流镜包括第一和第二MOS晶体管。 第一个MOS晶体管的栅极连接到其漏极。 MOS电容器结构串联连接在第一MOS晶体管的栅极和第二MOS晶体管的栅极之间。 电子可以通过施加第一和第二电气控制信号,以模拟方式从与第二MOS晶体管(通常是晶体管的栅极)相关联的浮动节点放置和去除。 第一电控信号控制电子从电子注入结构注入到浮动节点上,第二电控信号通过电子去除结构控制从浮动节点去除电子。 可以采用与多个载流线路通信的多个适应电流镜,以指示最流动的多个通电线路中的一个的输出。