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    • 1. 发明授权
    • Writable analog reference voltage storage device
    • 可写模拟参考电压存储器件
    • US5629891A
    • 1997-05-13
    • US622763
    • 1996-03-25
    • John LeMoncheckTimothy P. AllenGunter SteinbachCarver A. Mead
    • John LeMoncheckTimothy P. AllenGunter SteinbachCarver A. Mead
    • G05F1/46G05F3/24G11C5/14G11C11/56G11C27/00B11C16/04
    • G05F3/247G05F1/468G05F3/24G11C11/56G11C11/5621G11C27/005G11C5/147G11C16/30G11C2211/5634G11C7/16
    • A circuit for generating N analog voltage signals for reference or bias use employs N analog floating gate storage devices. Circuitry is provided so that all floating gate storage devices can be programmed to their target voltages individually or in parallel. Electron injection circuitry is provided for injecting electrons on to and a tunneling structure is provided for removing electrons from the floating gate of each floating gate storage device. A transistor structure with a lightly doped drain is provided for control of the tunneling structure. A capacitor is connected to each floating gate node to provide control of the injection structure. A dynamic analog storage element is provided to store the target voltage for the floating gate storage device. A comparator is provided to monitor the floating gate voltage and target voltage and control tunneling and injection. A digital storage device is provided to statically store the output of the comparator. During normal operation of the voltage reference circuit, the voltage comparator is configured as a follower amplifier to buffer the analog voltage output. During normal operation of the bias reference circuit, the current comparator is configured as a current mirror to buffer the analog current output.
    • 用于产生用于参考或偏置使用的N个模拟电压信号的电路使用N个模拟浮动栅极存储装置。 提供电路,使得所有浮动栅极存储装置可以单独地或并行地编程到它们的目标电压。 提供电子注入电路用于将电子注入到上面,并且提供隧道结构用于从每个浮动栅极存储装置的浮动栅极去除电子。 提供了具有轻掺杂漏极的晶体管结构,用于控制隧道结构。 电容器连接到每个浮动栅极节点以提供对注入结构的控制。 提供动态模拟存储元件以存储浮动栅极存储装置的目标电压。 提供比较器来监控浮栅电压和目标电压,并控制隧道和注入。 提供数字存储设备以静态存储比较器的输出。 在电压基准电路正常工作期间,电压比较器被配置为跟随放大器以缓冲模拟电压输出。 在偏置参考电路的正常工作期间,电流比较器被配置为电流镜来缓冲模拟电流输出。
    • 2. 发明授权
    • Adaptive analog minimum/maximum selector and subtractor circuit
    • 自适应模拟最小/最大选择器和减法器电路
    • US5408194A
    • 1995-04-18
    • US83905
    • 1993-06-25
    • Gunter SteinbachTimothy P. AllenCarver A. Mead
    • Gunter SteinbachTimothy P. AllenCarver A. Mead
    • G01R19/30G06G7/14H03K5/24
    • H03K5/24G01R19/30G06G7/14
    • A circuit for use as a channel of a minimum selector and subtractor circuit includes a P-Channel MOS transistor having a gate connected to an input node, a source connected to the output of a current source, and a drain connected to a fixed voltage source. The source of the P-Channel transistor is connectable to a common conductive line through a first switch. The source of the P-Channel transistor is also connected to the non-inverting input of a transconductance amplifier. The inverting input of the transconductance amplifier is connected to a first plate of a capacitor. The second plate of the capacitor is connected to a fixed voltage source such as ground. The output of the transconductance amplifier is connectable to its inverting input through a second switch. The output of the transconductance amplifier forms the output of the minimum selector and subtractor circuit. A plurality of individual channel circuits may all be connected to the common conductive line. The input nodes of the individual channel circuits are each individually connected to a different one of a plurality of analog input lines. The minimum selector and subtractor circuit determines the minimum analog value appearing on the plurality of lines and subtracts that value from the input values on all of the input lines. A maximum selector and subtractor circuit is formed by reversing transistor types.
    • 用作最小选择器和减法器电路的通道的电路包括具有连接到输入节点的栅极的P沟道MOS晶体管,连接到电流源的输出的源极和连接到固定电压源的漏极 。 P沟道晶体管的源极可通过第一开关连接到公共导线。 P沟道晶体管的源极也连接到跨导放大器的非反相输入端。 跨导放大器的反相输入连接到电容器的第一板。 电容器的第二板连接到诸如地之间的固定电压源。 跨导放大器的输出可通过第二个开关连接到其反相输入端。 跨导放大器的输出形成最小选择器和减法器电路的输出。 多个单独的通道电路都可以连接到公共导线。 各个通道电路的输入节点各自分别连接到多个模拟输入线中的不同的一个。 最小选择器和减法器电路确定出现在多行上的最小模拟值,并从所有输入行的输入值中减去该值。 通过反转晶体管类型形成最大选择器和减法器电路。
    • 3. 发明授权
    • Writable analog reference voltage storage device
    • 可写模拟参考电压存储器件
    • US5541878A
    • 1996-07-30
    • US267595
    • 1994-06-27
    • John LeMoncheckTimothy P. AllenGunter SteinbachCarver A. Mead
    • John LeMoncheckTimothy P. AllenGunter SteinbachCarver A. Mead
    • G05F1/46G05F3/24G11C5/14G11C11/56G11C27/00G11C16/04
    • G05F3/247G05F1/468G05F3/24G11C11/56G11C11/5621G11C27/005G11C5/147G11C16/30G11C2211/5634G11C7/16
    • A circuit for generating N analog voltage signals for reference or bias use employs N analog floating gate storage devices. Circuitry is provided so that all floating gate storage devices can be programmed to their target voltages individually or in parallel. Electron injection circuitry is provided for injecting electrons on to and a tunneling structure is provided for removing electrons from the floating gate of each floating gate storage device. A transistor structure with a lightly doped drain is provided for control of the tunneling structure. A capacitor is connected to each floating gate node to provide control of the injection structure. A dynamic analog storage element is provided to store the target voltage for the floating gate storage device. A comparator is provided to monitor the floating gate voltage and target voltage and control tunneling and injection. A digital storage device is provided to statically store the output of the comparator. During normal operation of the voltage reference circuit, the voltage comparator is configured as a follower amplifier to buffer the analog voltage output. During normal operation of the bias reference circuit, the current comparator is configured as a current mirror to buffer the analog current output.
    • 用于产生用于参考或偏置使用的N个模拟电压信号的电路使用N个模拟浮动栅极存储装置。 提供电路,使得所有浮动栅极存储装置可以单独地或并行地编程到它们的目标电压。 提供电子注入电路用于将电子注入到上面,并且提供隧道结构用于从每个浮动栅极存储装置的浮动栅极去除电子。 提供了具有轻掺杂漏极的晶体管结构,用于控制隧道结构。 电容器连接到每个浮动栅极节点以提供对注入结构的控制。 提供动态模拟存储元件以存储浮动栅极存储装置的目标电压。 提供一个比较器来监控浮动栅极电压和目标电压,并控制隧道和注入。 提供数字存储设备以静态存储比较器的输出。 在电压基准电路正常工作期间,电压比较器被配置为跟随放大器以缓冲模拟电压输出。 在偏置参考电路的正常工作期间,电流比较器被配置为电流镜以缓冲模拟电流输出。
    • 9. 发明申请
    • Linear phase-locked loop with dual tuning elements
    • 具有双调谐元件的线性锁相环
    • US20060208805A1
    • 2006-09-21
    • US11084376
    • 2005-03-18
    • Brian GallowayGunter SteinbachCharles Moore
    • Brian GallowayGunter SteinbachCharles Moore
    • H03L7/00
    • H03L7/085H03L7/093H03L7/099H03L2207/06
    • A linear PLL includes a VCO with first and second tuning elements. The first tuning element is adjusted in proportion to the phase error between an input signal and a VCO signal and the second tuning element is adjusted by an integral function of the phase error. By configuring the VCO with separate tuning elements that are separately adjusted in proportion to the phase error and by an integral function of the phase error, the 3 dB bandwidth frequency of the linear PLL depends primarily on the phase detector gain and the VCO gain that is contributed from the proportional adjustment. A linear PLL with separate proportional and integral tuning elements can be designed to exhibit a relatively constant gain over a relatively large frequency range.
    • 线性PLL包括具有第一和第二调谐元件的VCO。 第一调谐元件与输入信号和VCO信号之间的相位误差成比例地调整,并且通过相位误差的积分函数来调整第二调谐元件。 通过使用单独的调谐元件配置VCO,该调谐元件与相位误差成比例地分别调整,并通过相位误差的积分函数,线性PLL的3 dB带宽频率主要取决于相位检测器增益和VCO增益 由比例调整贡献。 具有分开的比例和积分调谐元件的线性PLL可以设计成在相对大的频率范围内呈现相对恒定的增益。