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1. 发明申请

US20120160941A1 SHOWERHEAD ELECTRODES 有权
标题翻译：淋浴电极
公开(公告)号：US20120160941A1
公开(公告)日：2012-06-28
申请号：US13409527
申请日：2012-03-01
申请人： Greg Bettencourt , Raj Dhindsa , George Diercks , Randall A. Hardin , Jon Keihl , Duane Lytle , Alexei Marakhtanov , Roger Patrick , John Pegg , Shannon Spencer
发明人： Greg Bettencourt , Raj Dhindsa , George Diercks , Randall A. Hardin , Jon Keihl , Duane Lytle , Alexei Marakhtanov , Roger Patrick , John Pegg , Shannon Spencer
IPC分类号： B05B5/00
CPC分类号： H01J37/04 , C23C16/4401 , C23C16/45565 , H01J37/3255 , H01J37/32605 , H01J37/32724 , H01J2237/032
摘要： A silicon-based showerhead electrode is provided that can include a backside, a frontside, and a plurality of showerhead passages extending from the backside of the silicon-based showerhead electrode to the frontside of the silicon-based showerhead electrode. The silicon-based showerhead electrode can comprise single crystal silicon. The silicon-based showerhead electrode may further include a plurality of partial recesses formed within the single crystal silicon along the backside of the silicon-based showerhead electrode. The plurality of partial recesses can leave a thickness of single crystal silicon between each of the partial recesses and the frontside of the silicon-based showerhead electrode.
摘要翻译：提供一种硅基喷头电极，其可以包括从硅基喷头电极的背面延伸到硅基喷头电极的前侧的背面，前侧和多个喷头通道。硅基喷头电极可以包括单晶硅。硅基喷头电极还可以包括沿着硅基喷头电极的背面形成在单晶硅内的多个部分凹部。多个部分凹部可以在每个部分凹部和硅基喷头电极的前侧之间留下单晶硅的厚度。

2. 发明授权

US08152954B2 Showerhead electrode assemblies and plasma processing chambers incorporating the same 有权
标题翻译：喷头电极组件和包括其的等离子体处理室
公开(公告)号：US08152954B2
公开(公告)日：2012-04-10
申请号：US11871586
申请日：2007-10-12
申请人： Greg Bettencourt , Raj Dhindsa , George Diercks , Randall A. Hardin , Jon Keihl , Duane Lytle , Alexei Marakhtanov , Roger Patrick , John Pegg , Shannon Spencer
发明人： Greg Bettencourt , Raj Dhindsa , George Diercks , Randall A. Hardin , Jon Keihl , Duane Lytle , Alexei Marakhtanov , Roger Patrick , John Pegg , Shannon Spencer
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/04 , C23C16/4401 , C23C16/45565 , H01J37/3255 , H01J37/32605 , H01J37/32724 , H01J2237/032
摘要： The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, and securing hardware, wherein the silicon-based showerhead electrode comprises a plurality of partial recesses formed in the backside of the silicon-based showerhead electrode and backside inserts positioned in the partial recesses. The thermal control plate comprises securing hardware passages configured to permit securing hardware to access the backside inserts. The securing hardware and the backside inserts are configured to maintain engagement of the thermal control plate and the silicon-based showerhead electrode and to permit disengagement of the thermal control plate and the silicon-based showerhead electrode while isolating the silicon-based electrode material of the silicon-based showerhead electrode from frictional contact with the securing hardware during disengagement.
摘要翻译：本发明一般涉及等离子体处理，更具体地，涉及其中使用的等离子体处理室和电极组件。根据本发明的一个实施例，提供一种电极组件，其包括热控制板，硅基喷头电极和固定硬件，其中硅基喷头电极包括多个部分凹部，其形成在硅基喷头电极和位于部分凹部中的背面插入件。热控制板包括固定硬件通道，其配置成允许固定硬件以接近背面插入件。固定硬件和背面插入件被配置为保持热控制板和硅基喷头电极的接合，并且允许热控制板和硅基喷头电极分离，同时隔离硅基电极材料的硅基电极材料硅基喷头电极在分离时与固定硬件摩擦接触。

3. 发明授权

US08268117B2 Showerhead electrodes 有权
标题翻译：喷头电极
公开(公告)号：US08268117B2
公开(公告)日：2012-09-18
申请号：US13409527
申请日：2012-03-01
申请人： Greg Bettencourt , Raj Dhindsa , George Diercks , Randall A. Hardin , Jon Keihl , Duane Lytle , Alexei Marakhtanov , Roger Patrick , John Pegg , Shannon Spencer
发明人： Greg Bettencourt , Raj Dhindsa , George Diercks , Randall A. Hardin , Jon Keihl , Duane Lytle , Alexei Marakhtanov , Roger Patrick , John Pegg , Shannon Spencer
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/04 , C23C16/4401 , C23C16/45565 , H01J37/3255 , H01J37/32605 , H01J37/32724 , H01J2237/032
摘要： A silicon-based showerhead electrode is provided that can include a backside, a frontside, and a plurality of showerhead passages extending from the backside of the silicon-based showerhead electrode to the frontside of the silicon-based showerhead electrode. The silicon-based showerhead electrode can comprise single crystal silicon. The silicon-based showerhead electrode may further include a plurality of partial recesses formed within the single crystal silicon along the backside of the silicon-based showerhead electrode. The plurality of partial recesses can leave a thickness of single crystal silicon between each of the partial recesses and the frontside of the silicon-based showerhead electrode.
摘要翻译：提供一种硅基喷头电极，其可以包括从硅基喷头电极的背面延伸到硅基喷头电极的前侧的背面，前侧和多个喷头通道。硅基喷头电极可以包括单晶硅。硅基喷头电极还可以包括沿着硅基喷头电极的背面形成在单晶硅内的多个部分凹部。多个部分凹部可以在每个部分凹部和硅基喷头电极的前侧之间留下单晶硅的厚度。

4. 发明申请

US20090095424A1 SHOWERHEAD ELECTRODE ASSEMBLIES AND PLASMA PROCESSING CHAMBERS INCORPORATING THE SAME 有权
标题翻译：淋浴电极组件和等离子体加工炉
公开(公告)号：US20090095424A1
公开(公告)日：2009-04-16
申请号：US11871586
申请日：2007-10-12
申请人： Greg Bettencourt , Raj Dhindsa , George Diercks , Randall A. Hardin , Jon Keihl , Duane Lytle , Alexei Marakhtanov , Roger Patrick , John Pegg , Shannon Spencer
发明人： Greg Bettencourt , Raj Dhindsa , George Diercks , Randall A. Hardin , Jon Keihl , Duane Lytle , Alexei Marakhtanov , Roger Patrick , John Pegg , Shannon Spencer
IPC分类号： C23C16/00 , H05H1/00
CPC分类号： H01J37/04 , C23C16/4401 , C23C16/45565 , H01J37/3255 , H01J37/32605 , H01J37/32724 , H01J2237/032
摘要： The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, and securing hardware, wherein the silicon-based showerhead electrode comprises a plurality of partial recesses formed in the backside of the silicon-based showerhead electrode and backside inserts positioned in the partial recesses. The thermal control plate comprises securing hardware passages configured to permit securing hardware to access the backside inserts. The securing hardware and the backside inserts are configured to maintain engagement of the thermal control plate and the silicon-based showerhead electrode and to permit disengagement of the thermal control plate and the silicon-based showerhead electrode while isolating the silicon-based electrode material of the silicon-based showerhead electrode from frictional contact with the securing hardware during disengagement.
摘要翻译：本发明一般涉及等离子体处理，更具体地，涉及其中使用的等离子体处理室和电极组件。根据本发明的一个实施例，提供一种电极组件，其包括热控制板，硅基喷头电极和固定硬件，其中硅基喷头电极包括多个部分凹部，其形成在硅基喷头电极和位于部分凹部中的背面插入件。热控制板包括固定硬件通道，其配置成允许固定硬件以接近背面插入件。固定硬件和后侧插入件构造成保持热控制板和硅基喷头电极的接合，并且允许热控制板和硅基喷头电极分离，同时隔离硅基电极材料的硅基电极材料硅基喷头电极在分离时与固定硬件摩擦接触。

5. 发明申请

US20090236040A1 ELECTRODE ASSEMBLY AND PLASMA PROCESSING CHAMBER UTILIZING THERMALLY CONDUCTIVE GASKET 有权
标题翻译：电极组件和等离子体加热室，采用导热气体
公开(公告)号：US20090236040A1
公开(公告)日：2009-09-24
申请号：US12050195
申请日：2008-03-18
申请人： Roger Patrick , Raj Dhindsa , Greg Bettencourt , Alexei Marakhtanov
发明人： Roger Patrick , Raj Dhindsa , Greg Bettencourt , Alexei Marakhtanov
IPC分类号： H01L21/3065 , C23C16/44 , C23C16/513
CPC分类号： C23C16/45565 , H01J37/32541 , H01J37/32724
摘要： The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, and a thermally conductive gasket, wherein respective profiles of a frontside of the thermal control plate and a backside of the showerhead electrode cooperate to define a disjointed thermal interface comprising portions proximal to showerhead passages of the showerhead electrode and portions displaced from the showerhead passages. The displaced portions are recessed relative to the proximal portions and are separated from the showerhead passages by the proximal portions of the thermal interface. The gasket is positioned along the displaced portions such that the gasket is isolated from the showerhead passages and may facilitate heat transfer across the thermal interface from the showerhead electrode to the thermal control plate.
摘要翻译：本发明一般涉及等离子体处理，更具体地，涉及其中使用的等离子体处理室和电极组件。根据本发明的一个实施例，提供了一种电极组件，其包括热控制板，硅基喷头电极和导热衬垫，其中热控制板的前侧和喷头的背面的各自的轮廓电极配合以限定不连接的热界面，其包括靠近喷头电极的喷头通道的部分和从喷头通道移位的部分。移位部分相对于近端部分凹陷，并且通过热界面的近端部分与喷头通道分离。垫圈沿着移位的部分定位，使得垫圈与喷头通道隔离，并且可以促进跨过从喷头电极到热控制板的热界面的热传递。

6. 发明授权

US08187413B2 Electrode assembly and plasma processing chamber utilizing thermally conductive gasket 有权
标题翻译：使用导热垫片的电极组件和等离子体处理室
公开(公告)号：US08187413B2
公开(公告)日：2012-05-29
申请号：US12050195
申请日：2008-03-18
申请人： Roger Patrick , Raj Dhindsa , Greg Bettencourt , Alexei Marakhtanov
发明人： Roger Patrick , Raj Dhindsa , Greg Bettencourt , Alexei Marakhtanov
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： C23C16/45565 , H01J37/32541 , H01J37/32724
摘要： The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, and a thermally conductive gasket, wherein respective profiles of a frontside of the thermal control plate and a backside of the showerhead electrode cooperate to define a disjointed thermal interface comprising portions proximal to showerhead passages of the showerhead electrode and portions displaced from the showerhead passages. The displaced portions are recessed relative to the proximal portions and are separated from the showerhead passages by the proximal portions of the thermal interface. The gasket is positioned along the displaced portions such that the gasket is isolated from the showerhead passages and may facilitate heat transfer across the thermal interface from the showerhead electrode to the thermal control plate.
摘要翻译：本发明一般涉及等离子体处理，更具体地，涉及其中使用的等离子体处理室和电极组件。根据本发明的一个实施例，提供一种电极组件，其包括热控制板，硅基喷头电极和导热衬垫，其中热控制板的前侧和喷头的背面的各自的轮廓电极配合以限定不连接的热界面，其包括靠近喷头电极的喷头通道的部分和从喷头通道移位的部分。移位部分相对于近端部分凹陷，并且通过热界面的近端部分与喷头通道分离。垫圈沿着移位的部分定位，使得垫圈与喷头通道隔离，并且可以促进跨过从喷头电极到热控制板的热界面的热传递。

7. 发明申请

US20080308229A1 ELECTRODE ASSEMBLY AND PLASMA PROCESSING CHAMBER UTILIZING THERMALLY CONDUCTIVE GASKET AND O-RINGS 有权
标题翻译：电极组件和等离子体加工室，采用导热垫片和O形圈
公开(公告)号：US20080308229A1
公开(公告)日：2008-12-18
申请号：US12112112
申请日：2008-04-30
申请人： Roger Patrick , Raj Dhindsa , Greg Bettencourt , Alexei Marakhtanov
发明人： Roger Patrick , Raj Dhindsa , Greg Bettencourt , Alexei Marakhtanov
IPC分类号： H05H1/24 , C23C16/453 , H05H15/00
CPC分类号： H05H1/46 , H01J37/32541 , H01J37/32724
摘要： The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, a thermally conductive gasket, and a plurality of o-rings, wherein respective profiles of a frontside of the thermal control plate and a backside of the showerhead electrode cooperate to define a thermal interface. The thermally conductive gasket and the o-rings are positioned along this thermal interface with the o-rings separating the thermally conductive gasket from the showerhead passages such that the gasket is isolated from the showerhead passages. The gasket may facilitate heat transfer across the thermal interface from the showerhead electrode to the thermal control plate.
摘要翻译：本发明一般涉及等离子体处理，更具体地，涉及其中使用的等离子体处理室和电极组件。根据本发明的一个实施例，提供一种电极组件，其包括热控制板，硅基喷头电极，导热衬垫和多个O形环，其中热控制器的前侧的各个轮廓板和喷头电极的背面配合以限定热界面。导热垫圈和O形环沿着该热界面定位，O形环将导热垫圈与喷头通道分开，使得垫圈与喷头通道隔离。衬垫可以促进从喷头电极到热控制板的热界面的热传递。

8. 发明授权

US08216418B2 Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings 有权
标题翻译：使用导热垫圈和O形圈的电极组件和等离子体处理室
公开(公告)号：US08216418B2
公开(公告)日：2012-07-10
申请号：US12112112
申请日：2008-04-30
申请人： Roger Patrick , Raj Dhindsa , Greg Bettencourt , Alexei Marakhtanov
发明人： Roger Patrick , Raj Dhindsa , Greg Bettencourt , Alexei Marakhtanov
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H05H1/46 , H01J37/32541 , H01J37/32724
摘要： The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, a thermally conductive gasket, and a plurality of o-rings, wherein respective profiles of a frontside of the thermal control plate and a backside of the showerhead electrode cooperate to define a thermal interface. The thermally conductive gasket and the o-rings are positioned along this thermal interface with the o-rings separating the thermally conductive gasket from the showerhead passages such that the gasket is isolated from the showerhead passages. The gasket may facilitate heat transfer across the thermal interface from the showerhead electrode to the thermal control plate.
摘要翻译：本发明一般涉及等离子体处理，更具体地，涉及其中使用的等离子体处理室和电极组件。根据本发明的一个实施例，提供一种电极组件，其包括热控制板，硅基喷头电极，导热衬垫和多个O形环，其中热控制器的前侧的各个轮廓板和喷头电极的背面配合以限定热界面。导热垫圈和O形环沿着该热界面定位，O形环将导热垫圈与喷头通道分开，使得垫圈与喷头通道隔离。衬垫可以促进从喷头电极到热控制板的热界面的热传递。

9. 发明授权

US07169256B2 Plasma processor with electrode responsive to multiple RF frequencies 有权
标题翻译：等离子体处理器，电极响应多个RF频率
公开(公告)号：US07169256B2
公开(公告)日：2007-01-30
申请号：US10855706
申请日：2004-05-28
申请人： Raj Dhindsa , Felix Kozakevich , David Douglas Trussell
发明人： Raj Dhindsa , Felix Kozakevich , David Douglas Trussell
IPC分类号： H01L21/306
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165 , H01J37/3299
摘要： A plasma processor processing a workpiece includes sources having frequencies 2 MHz, 27 MHz, and 60 MHz, applied by three matching networks to an electrode in a vacuum chamber including the workpiece. Alternatively 60 MHz is applied to a second electrode by a fourth matching network. The matching networks, substantially tuned to the frequencies of the sources driving them, include series inductances so the 2 MHz inductance exceeds the 27 MHz network inductance, and the 27 MHz network inductance exceeds the inductances of the 60 MHz networks. The matching networks attenuate by at least 26 DB the frequencies of the sources that do not drive them. Shunt inductors between the 27 and 60 MHz sources decouple 2 MHz from the 27 and 60 MHz sources. A series resonant circuit (resonant to about 5 MHz) shunts the 2 MHz network and the electrode to help match the 2 MHz source to the electrode.
摘要翻译：处理工件的等离子体处理器包括频率为2MHz，27MHz和60MHz的源，由三个匹配网络施加到包括工件的真空室中的电极。或者通过第四匹配网络将60MHz施加到第二电极。基本上调谐到驱动它们的源的频率的匹配网络包括串联电感，因此2MHz电感超过27MHz网络电感，并且27MHz网络电感超过60MHz网络的电感。匹配网络衰减至少26 DB的驱动它们的源的频率。 27和60 MHz信号源之间的并联电感将2 MHz与27 MHz和60 MHz源分离。串联谐振电路（谐振到约5 MHz）分流2 MHz网络和电极，以帮助将2 MHz源极与电极相匹配。

10. 发明授权

US08674255B1 Apparatus and method for controlling etch uniformity 有权
标题翻译：用于控制蚀刻均匀性的装置和方法
公开(公告)号：US08674255B1
公开(公告)日：2014-03-18
申请号：US11298804
申请日：2005-12-08
申请人： Eric Lenz , Raj Dhindsa , Dave Trussell , Lumin Li
发明人： Eric Lenz , Raj Dhindsa , Dave Trussell , Lumin Li
IPC分类号： H01J7/24 , B23K9/00
CPC分类号： B23K10/003 , B23K10/006 , B23K2101/40 , H01J37/32091 , H01J37/32183 , H01J37/32642
摘要： A plasma processing system is provided. The plasma processing system includes a radio frequency (RF) power generator configured to have a tunable frequency power output, the frequency output being adjustable within a range. A processing chamber having a bottom electrode and a top electrode is included. A plasma region being defined between the bottom and top electrodes and the processing chamber receives RF power from the RF power generator. A match network is coupled between the RF power generator and the processing chamber. The match network has a first tunable element and a second tunable element. The first tunable element adjusts a split between a first grounding pathway defined within an inner region of the plasma region and a second grounding pathway defined within an outer region of the plasma region. The second tunable element adjusts a load delivered to the processing chamber from the power generator.
摘要翻译：提供等离子体处理系统。等离子体处理系统包括被配置为具有可调频率功率输出的射频（RF）功率发生器，该频率输出可在一个范围内调节。包括具有底部电极和顶部电极的处理室。定义在底部和顶部电极之间的等离子体区域，并且处理室从RF发生器接收RF功率。匹配网络耦合在RF发电机和处理室之间。匹配网络具有第一可调元素和第二可调元素。第一可调谐元件调节限定在等离子体区域的内部区域内的第一接地路径和限定在等离子体区域的外部区域内的第二接地路径之间的分裂。第二可调元件调节从发电机输送到处理室的负载。

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